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1. 发明授权

US08354292B2 CMOS image sensor having a crosstalk prevention structure and method of manufacturing the same 有权
标题翻译：具有串扰防止结构的CMOS图像传感器及其制造方法
公开(公告)号：US08354292B2
公开(公告)日：2013-01-15
申请号：US13413137
申请日：2012-03-06
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L21/339
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

2. 发明申请

US20120164783A1 CMOS IMAGE SENSOR HAVING A CROSSTALK PREVENTION STRUCTURE AND METHOD OF MANUFACTUREING THE SAME 有权
标题翻译：具有CROSSTALK预防结构的CMOS图像传感器及其制造方法
公开(公告)号：US20120164783A1
公开(公告)日：2012-06-28
申请号：US13413137
申请日：2012-03-06
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L31/18
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

3. 发明申请

US20110163363A1 COMS image sensors and methods of manufacturing the same 有权
标题翻译： COMS图像传感器及其制造方法
公开(公告)号：US20110163363A1
公开(公告)日：2011-07-07
申请号：US13064289
申请日：2011-03-16
申请人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14636
摘要： Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.
摘要翻译：提供互补金属氧化物半导体（CMOS）图像传感器（CIS）及其制造方法，传感器包括在其中限定了第一，第二，第三和第四区域的基板上的外延层。可以在第一区域中的外延层的上部形成光电二极管。可以在第二，第三和第四区域中的外延层上形成多个栅极结构。可以在栅极结构和第一和第二区域中的外延层上形成第一阻挡层。可以在与第二区域中的栅极结构相邻的外延层的上部形成第一杂质层，并且在第三和第四区域中与栅极结构相邻的外延层的上部处形成第二杂质层。可以在光电二极管上方形成滤色器层。可以在滤色器层上形成微透镜。

4. 发明授权

US07932120B2 Methods of manufacturing CMOS image sensors 有权
标题翻译： CMOS图像传感器的制造方法
公开(公告)号：US07932120B2
公开(公告)日：2011-04-26
申请号：US12461903
申请日：2009-08-27
申请人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L21/00 , H01L21/8238
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14636
摘要： Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.
摘要翻译：提供互补金属氧化物半导体（CMOS）图像传感器（CIS）及其制造方法，传感器包括在其中限定了第一，第二，第三和第四区域的基板上的外延层。可以在第一区域中的外延层的上部形成光电二极管。可以在第二，第三和第四区域中的外延层上形成多个栅极结构。可以在栅极结构和第一和第二区域中的外延层上形成第一阻挡层。可以在与第二区域中的栅极结构相邻的外延层的上部形成第一杂质层，并且在第三和第四区域中与栅极结构相邻的外延层的上部处形成第二杂质层。可以在光电二极管上方形成滤色器层。可以在滤色器层上形成微透镜。

5. 发明申请

US20100055823A1 Methods of manufacturing CMOS image sensors 有权
标题翻译： CMOS图像传感器的制造方法
公开(公告)号：US20100055823A1
公开(公告)日：2010-03-04
申请号：US12461903
申请日：2009-08-27
申请人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14636
摘要： Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.
摘要翻译：提供互补金属氧化物半导体（CMOS）图像传感器（CIS）及其制造方法，传感器包括在其中限定了第一，第二，第三和第四区域的基板上的外延层。可以在第一区域中的外延层的上部形成光电二极管。可以在第二，第三和第四区域中的外延层上形成多个栅极结构。可以在栅极结构和第一和第二区域中的外延层上形成第一阻挡层。可以在与第二区域中的栅极结构相邻的外延层的上部形成第一杂质层，并且在第三和第四区域中与栅极结构相邻的外延层的上部处形成第二杂质层。可以在光电二极管上方形成滤色器层。可以在滤色器层上形成微透镜。

6. 发明授权

US08309996B2 CMOS image sensors 有权
标题翻译： CMOS图像传感器
公开(公告)号：US08309996B2
公开(公告)日：2012-11-13
申请号：US13064289
申请日：2011-03-16
申请人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14636
摘要： Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.
摘要翻译：提供互补金属氧化物半导体（CMOS）图像传感器（CIS）及其制造方法，传感器包括在其中限定了第一，第二，第三和第四区域的基板上的外延层。可以在第一区域中的外延层的上部形成光电二极管。可以在第二，第三和第四区域中的外延层上形成多个栅极结构。可以在栅极结构和第一和第二区域中的外延层上形成第一阻挡层。可以在与第二区域中的栅极结构相邻的外延层的上部形成第一杂质层，并且在第三和第四区域中与栅极结构相邻的外延层的上部形成第二杂质层。可以在光电二极管上方形成滤色器层。可以在滤色器层上形成微透镜。

7. 发明授权

US08138530B2 CMOS image sensor having a crosstalk prevention structure 有权
标题翻译：具有串扰防止结构的CMOS图像传感器
公开(公告)号：US08138530B2
公开(公告)日：2012-03-20
申请号：US12482960
申请日：2009-06-11
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Keang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Keang
IPC分类号： H01L31/062
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

8. 发明申请

US20090309144A1 CMOS Image sensor having a crosstalk prevention structure 有权
标题翻译： CMOS图像传感器具有串扰防止结构
公开(公告)号：US20090309144A1
公开(公告)日：2009-12-17
申请号：US12482960
申请日：2009-06-11
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Keang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Keang
IPC分类号： H01L31/112
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在制造CMOS图像传感器的方法中，在N型衬底上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

9. 发明授权

US08129765B2 CMOS image sensor with photo-detector protecting layers 失效
标题翻译：具有光电检测器保护层的CMOS图像传感器
公开(公告)号：US08129765B2
公开(公告)日：2012-03-06
申请号：US12214666
申请日：2008-06-20
申请人： Ui-Sik Kim , Young-Hoon Park
发明人： Ui-Sik Kim , Young-Hoon Park
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： An image sensor includes a logic region and an APS region having a first gate electrode, a photo-detector, a first protecting layer, first spacers, and a second protecting layer. The first gate electrode is formed over a semiconductor substrate. The photo-detector is formed to a side of the first gate electrode within the semiconductor substrate. The first protecting layer is formed over the first gate electrode and the photo-detector. The first spacers are formed over the first protecting layer to the sides of the first gate electrode. The second protecting layer is formed over the first protecting layer and the spacers. The first and second protecting layers are for preventing a contaminant from reaching the photo-detector.
摘要翻译：图像传感器包括逻辑区域和具有第一栅电极，光检测器，第一保护层，第一间隔物和第二保护层的APS区域。第一栅电极形成在半导体衬底上。光检测器形成在半导体衬底内的第一栅电极的一侧。第一保护层形成在第一栅电极和光检测器之上。在第一保护层上形成第一间隔物到第一栅电极的侧面。第二保护层形成在第一保护层和间隔物上。第一和第二保护层用于防止污染物到达光检测器。

10. 发明申请

US20090014763A1 CMOS image sensor with photo-detector protecting layers 失效
标题翻译：具有光电检测器保护层的CMOS图像传感器
公开(公告)号：US20090014763A1
公开(公告)日：2009-01-15
申请号：US12214666
申请日：2008-06-20
申请人： Ui-Sik Kim , Young-Hoon Park
发明人： Ui-Sik Kim , Young-Hoon Park
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： An image sensor includes a logic region and an APS region having a first gate electrode, a photo-detector, a first protecting layer, first spacers, and a second protecting layer. The first gate electrode is formed over a semiconductor substrate. The photo-detector is formed to a side of the first gate electrode within the semiconductor substrate. The first protecting layer is formed over the first gate electrode and the photo-detector. The first spacers are formed over the first protecting layer to the sides of the first gate electrode. The second protecting layer is formed over the first protecting layer and the spacers. The first and second protecting layers are for preventing a contaminant from reaching the photo-detector.
摘要翻译：图像传感器包括逻辑区域和具有第一栅电极，光检测器，第一保护层，第一间隔物和第二保护层的APS区域。第一栅电极形成在半导体衬底上。光检测器形成在半导体衬底内的第一栅电极的一侧。第一保护层形成在第一栅电极和光检测器之上。在第一保护层上形成第一间隔物到第一栅电极的侧面。第二保护层形成在第一保护层和间隔物上。第一和第二保护层用于防止污染物到达光检测器。

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