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31. 发明申请

US20120248470A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120248470A1
公开(公告)日：2012-10-04
申请号：US13486017
申请日：2012-06-01
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Motomu KURATA , Hiroyuki HATA , Mitsuhiro ICHIJO , Takashi OHTSUKI , Aya ANZAI , Masayuki SAKAKURA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Motomu KURATA , Hiroyuki HATA , Mitsuhiro ICHIJO , Takashi OHTSUKI , Aya ANZAI , Masayuki SAKAKURA
IPC分类号： H01L33/08
CPC分类号： H04N5/655 , G06F3/02 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3258 , H01L27/3276 , H01L33/60 , H01L51/0005 , H01L51/5246 , H01L51/56 , H01L2224/4847 , H01L2227/323 , H01L2251/5323 , H04N5/642
摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
摘要翻译：本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。布线等形成为与绝缘层接触，从而增强布线等的覆盖。此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

32. 发明申请

US20120231581A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120231581A1
公开(公告)日：2012-09-13
申请号：US13413686
申请日：2012-03-07
申请人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA
发明人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA
IPC分类号： H01L21/36
CPC分类号： H01L29/78693
摘要： In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.
摘要翻译：在制造包括氧化物半导体层的晶体管的工艺中，在氧化硅膜上形成包含与结晶态的氧化物半导体的化学计量组成比相比含有过量氧的区域的非晶氧化物半导体层，铝在非晶形氧化物半导体层上形成氧化膜，然后进行热处理，使得非晶氧化物半导体层的至少一部分结晶，并且包含具有c轴的晶体的氧化物半导体层，该晶体基本上垂直于形成氧化物半导体层。

33. 发明申请

US20120214276A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120214276A1
公开(公告)日：2012-08-23
申请号：US13455425
申请日：2012-04-25
申请人： Yoshiaki OIKAWA , Hotaka MARUYAMA , Hiromichi GODO , Daisuke KAWAE , Shunpei YAMAZAKI
发明人： Yoshiaki OIKAWA , Hotaka MARUYAMA , Hiromichi GODO , Daisuke KAWAE , Shunpei YAMAZAKI
IPC分类号： H01L21/363
CPC分类号： H01L27/1225 , G02F1/1368 , G02F2201/121 , G02F2201/123 , H01L21/02565 , H01L21/02631 , H01L27/1214 , H01L27/124 , H01L27/156 , H01L27/3248 , H01L27/3262 , H01L29/24 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.
摘要翻译：本发明的目的是提供一种具有使用氧化物半导体层的具有优异电特性的薄膜晶体管的半导体器件。包括SiOX的In-Sn-O系氧化物半导体层用于沟道形成区域。为了降低包含SiOX的In-Sn-O系氧化物半导体层与由电阻低的金属材料形成的布线层之间的接触电阻，在源电极层或漏电极之间形成源极区或漏极区层和包含SiOX的In-Sn-O系氧化物半导体层。使用不包含SiOX的In-Sn-O系氧化物半导体层来形成源极区域或漏极区域以及像素区域。

34. 发明申请

US20120211874A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120211874A1
公开(公告)日：2012-08-23
申请号：US13461249
申请日：2012-05-01
申请人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO
发明人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO
IPC分类号： H01L29/02
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
摘要翻译：本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层要完全去皮。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。

35. 发明申请

US20120206503A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20120206503A1
公开(公告)日：2012-08-16
申请号：US13363408
申请日：2012-02-01
申请人： Yoshiharu HIRAKATA , Jun KOYAMA , Shunpei YAMAZAKI
发明人： Yoshiharu HIRAKATA , Jun KOYAMA , Shunpei YAMAZAKI
IPC分类号： G09G5/00 , G09G3/36 , G02F1/1335
CPC分类号： H04N13/31 , G02B27/225 , G02F1/13306 , G02F1/1347 , G02F1/136209 , G02F1/1368 , G09G3/003 , H01L27/1225 , H04N13/324 , H04N13/359 , H04N13/361 , H04N2213/001
摘要： A display device capable of displaying both a 3D image and a 2D image is provided. The display device includes a plurality of optical filter regions where light-blocking panels for producing binocular disparity are arranged in matrix. The light-blocking panel can select whether to transmit light emitted from a display panel in each of the plurality of optical filter regions. Thus, in the display device, some regions where binocular disparity is produced can be provided. Consequently, the display device can display both a 3D image and a 2D image.
摘要翻译：提供能够同时显示3D图像和2D图像的显示装置。显示装置包括多个滤光器区域，其中用于产生双目视差的遮光板被排列成矩阵。遮光面板可以选择是否在多个滤光器区域中的每一个中透射从显示面板发射的光。因此，在显示装置中，可以提供产生双目视差的一些区域。因此，显示装置可以同时显示3D图像和2D图像。

36. 发明申请

US20120206446A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20120206446A1
公开(公告)日：2012-08-16
申请号：US13367715
申请日：2012-02-07
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： G06T15/00
CPC分类号： H04N13/366 , G02B27/2214 , H04N13/31 , H04N13/315 , H04N13/324
摘要： A display device includes a display panel including a matrix of pixel regions, and a shutter panel including a matrix of optical shutter regions each of which state is selected from a light-transmitting state and a light-shielding state. In a first display state, the display panel performs display regarding one pixel region as a display element unit, and each of the plurality of optical shutter regions in the shutter panel is brought into a light-transmitting state or a light-shielding state. In a second display state, the display panel performs display regarding at least two pixel regions as the display element unit, and each of the plurality of optical shutter regions in the shutter panel is brought into a light-transmitting state or a light-shielding state. As a result, the range of distance with which 3D images can be displayed can differ between the first display state and the second display state.
摘要翻译：显示装置包括包括像素区域矩阵的显示面板和包括光闸区域矩阵的快门面板，每个光闸区域的状态均选自透光状态和遮光状态。在第一显示状态下，显示面板执行关于一个像素区域的显示作为显示元件单元，并且快门面板中的多个光学快门区域中的每一个进入透光状态或遮光状态。在第二显示状态下，显示面板执行关于至少两个像素区域的显示作为显示元件单元，并且快门面板中的多个光学快门区域中的每一个进入透光状态或遮光状态。结果，可以显示3D图像的距离的范围可以在第一显示状态和第二显示状态之间不同。

37. 发明申请

US20120187396A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120187396A1
公开(公告)日：2012-07-26
申请号：US13355950
申请日：2012-01-23
申请人： Shunpei YAMAZAKI , Teruyuki FUJII , Sho NAGAMATSU
发明人： Shunpei YAMAZAKI , Teruyuki FUJII , Sho NAGAMATSU
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869 , H01L23/564 , H01L29/36 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78621 , H01L2924/0002 , H01L2924/00
摘要： A base insulating film is formed over a substrate. A first oxide semiconductor film is formed over the base insulating film, and then first heat treatment is performed to form a second oxide semiconductor film. Then, selective etching is performed to form a third oxide semiconductor film. An insulating film is formed over the first insulating film and the third oxide semiconductor film. A surface of the insulating film is polished to expose a surface of the third oxide semiconductor film, so that a sidewall insulating film is formed in contact with at least a side surface of the third oxide semiconductor film. Then, a source electrode and a drain electrode are formed over the sidewall insulating film and the third oxide semiconductor film. A gate insulating film and a gate electrode are formed.
摘要翻译：在基板上形成基极绝缘膜。在基底绝缘膜上形成第一氧化物半导体膜，然后进行第一热处理以形成第二氧化物半导体膜。然后，进行选择性蚀刻以形成第三氧化物半导体膜。绝缘膜形成在第一绝缘膜和第三氧化物半导体膜上。抛光绝缘膜的表面以暴露第三氧化物半导体膜的表面，使得形成与第三氧化物半导体膜的至少侧面接触的侧壁绝缘膜。然后，在侧壁绝缘膜和第三氧化物半导体膜上形成源电极和漏电极。形成栅极绝缘膜和栅电极。

38. 发明申请

US20120181522A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20120181522A1
公开(公告)日：2012-07-19
申请号：US13417551
申请日：2012-03-12
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hisao IKEDA , Yasuo NAKAMURA , Keiko SAITO
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hisao IKEDA , Yasuo NAKAMURA , Keiko SAITO
IPC分类号： H01L27/32
CPC分类号： H01L27/3272 , H01L27/1218 , H01L27/1222 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L33/08 , H01L33/36 , H01L33/50 , H01L33/56 , H01L33/58 , H01L51/5052 , H01L51/5088 , H01L51/5092 , H01L51/5203 , H01L51/5212 , H01L51/5228 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/5262 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer on the first electrode, and a second electrode on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.
摘要翻译：本发明提供一种包括发射红光的第一发光元件，发出绿光的第二发光元件，发出蓝光的第三发光元件和滤色器的发光器件，其中滤色器包括选择性地透射红光的第一着色层，选择性地透射绿光的第二着色层和选择性地透射蓝光的第三着色层，第一至第三发光元件分别对应于第一至第三着色层层，其中第一至第三发光元件中的每一个具有第一电极，第一电极上的电致发光层和电致发光层上的第二电极，并且其中电致发光层包括与第二电极接触的层，并且在与第二电极接触的层中包含金属氧化物或苯并恶唑衍生物。

39. 发明申请

US20120175610A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120175610A1
公开(公告)日：2012-07-12
申请号：US13346072
申请日：2012-01-09
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/66969 , H01L21/477 , H01L29/7869
摘要： A manufacturing method of a semiconductor device includes the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film; performing heat treatment to form a second oxide semiconductor film after the step of forming the first oxide semiconductor film; forming a first conductive film; forming a first resist mask including regions whose thicknesses are different; etching the second oxide semiconductor film and the first conductive film using the first resist mask to form a third oxide semiconductor film and a second conductive film; reducing the size of the first resist mask to form a second resist mask; selectively etching the second conductive film using the second resist mask to remove a part of the second conductive film so that a source electrode and a drain electrode are formed.
摘要翻译：半导体器件的制造方法包括以下步骤：在衬底上形成栅电极; 在栅电极上形成栅极绝缘膜; 形成氧化物半导体膜; 在形成第一氧化物半导体膜的步骤之后进行热处理以形成第二氧化物半导体膜; 形成第一导电膜; 形成包括厚度不同的区域的第一抗蚀剂掩模; 使用第一抗蚀剂掩模蚀刻第二氧化物半导体膜和第一导电膜，以形成第三氧化物半导体膜和第二导电膜; 减小第一抗蚀剂掩模的尺寸以形成第二抗蚀剂掩模; 使用第二抗蚀剂掩模选择性地蚀刻第二导电膜以去除第二导电膜的一部分，从而形成源电极和漏电极。

40. 发明申请

US20120175608A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120175608A1
公开(公告)日：2012-07-12
申请号：US13345795
申请日：2012-01-09
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/1288 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/467 , H01L21/469 , H01L21/477 , H01L27/1214 , H01L27/1259 , H01L27/127 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： The semiconductor device includes a gate electrode over a substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A length of part of an outer edge of the oxide semiconductor layer from an outer edge of the source electrode to an outer edge of the drain electrode is more than three times, preferably more than five times as long as a channel length of the semiconductor device. Further, oxygen is supplied from the gate insulating layer to the oxide semiconductor layer by heat treatment. In addition, an insulating layer is formed after the oxide semiconductor layer is selectively etched.
摘要翻译：该半导体器件包括：衬底上的栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的氧化物半导体层，以及氧化物半导体层上的源电极和漏电极。从源电极的外边缘到漏电极的外边缘的氧化物半导体层的外边缘的一部分的长度是半导体器件的沟道长度的三倍以上，优选大于五倍。此外，通过热处理从栅极绝缘层向氧化物半导体层提供氧。此外，在氧化物半导体层被选择性蚀刻之后形成绝缘层。

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