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31. 发明申请

US20080154745A1 UNIFIED RETAIL CATALOG WITH SINGLE CUSTOMER VIEW OVER MULTIPLE PHYSICAL CATALOG REPRESENTATIONS 有权
标题翻译：统一的零售目录与单个客户视图多个物理目录表示
公开(公告)号：US20080154745A1
公开(公告)日：2008-06-26
申请号：US11614179
申请日：2006-12-21
申请人： Victor Chan , Ross McKegney , Jeffrey A. Shiner , Ramiah K. Tin , Jian Zhang
发明人： Victor Chan , Ross McKegney , Jeffrey A. Shiner , Ramiah K. Tin , Jian Zhang
IPC分类号： G06Q30/00
CPC分类号： G06Q30/0603 , G06Q30/0623 , G06Q30/0641
摘要： Embodiments of the present invention address deficiencies of the art in respect to catalog modeling for e-commerce systems and provide a method, system and computer program product for an adaptive unified retail catalog. In an embodiment of the invention, an e-commerce data processing system can be configured for catalog adaptation. The system can include an adaptive retail catalog, a logical catalog implementation of a logical catalog model coupled to the adaptive retail catalog, and a physical catalog coupled to the adaptive retail catalog through a database mediator. The system further includes a mapping of search requests against the logical catalog implementation to the physical catalog. In this way, changes to the underlying physical catalog model can be accommodated without requiring a companion change in the logical catalog model.
摘要翻译：本发明的实施例解决了关于电子商务系统的目录建模方面的技术缺陷，并且提供了用于自适应统一零售目录的方法，系统和计算机程序产品。在本发明的一个实施例中，电子商务数据处理系统可以被配置用于目录自适应。系统可以包括自适应零售目录，耦合到自适应零售目录的逻辑目录模型的逻辑目录实现，以及通过数据库调解器耦合到自适应零售目录的物理目录。该系统还包括将搜索请求与逻辑目录实现相关联到物理目录的映射。以这种方式，可以适应对底层物理目录模型的更改，而无需在逻辑目录模型中进行随播更改。

32. 发明申请

US20080010170A1 MULTI-TIER INVENTORY VISIBILITY 有权
标题翻译：多层次的可见性
公开(公告)号：US20080010170A1
公开(公告)日：2008-01-10
申请号：US11428607
申请日：2006-07-05
申请人： Victor Chan , Mark W. Hubbard , Aalim Lakhani , Daisy Tan , Fen Wang
发明人： Victor Chan , Mark W. Hubbard , Aalim Lakhani , Daisy Tan , Fen Wang
IPC分类号： G06Q10/00
CPC分类号： G06Q10/087
摘要： Embodiments of the present invention address deficiencies of the art in respect to inventory management and provide a method, system and computer program product for multi-tier inventory visibility. In one embodiment of the invention, a multi-tier inventory management data processing system can include an inventory management system coupled to one or more e-commerce applications over an enterprise bus, and multiple different instances of a tier inventory component, each of the instances corresponding to a local inventory cache. Each instance can include program code enabled to manage the local inventory cache and an inventory management API exposing inventory operations on the local inventory cache to other instances of the tier inventory component.
摘要翻译：本发明的实施例解决了库存管理方面的缺陷，并且提供了用于多层库存可见性的方法，系统和计算机程序产品。在本发明的一个实施例中，多层次库存管理数据处理系统可以包括通过企业总线耦合到一个或多个电子商务应用的库存管理系统，以及层次库存组件的多个不同实例，每个实例对应于本地库存缓存。每个实例都可以包括启用以管理本地库存高速缓存的程序代码，以及库存管理API，将本地库存缓存上的库存操作暴露给层级库存组件的其他实例。

33. 发明申请

US20070168203A1 Context-based mapping of a content repository in a context driven component execution environment 审中-公开
标题翻译：内容存储库在上下文驱动组件执行环境中的基于上下文的映射
公开(公告)号：US20070168203A1
公开(公告)日：2007-07-19
申请号：US11333162
申请日：2006-01-17
申请人： Victor Chan , Mark Hubbard , Jacob Vandergoot , Tony Woo
发明人： Victor Chan , Mark Hubbard , Jacob Vandergoot , Tony Woo
IPC分类号： G06Q99/00 , G07G1/00
CPC分类号： G06Q10/10 , G06Q10/0637 , G06Q30/06
摘要： Embodiments of the present invention provide a method, system and computer program product for a content repository mapping method. In one embodiment, the method can include obtaining a context to a transaction and selecting a content repository from among a set of content repositories based upon the obtained context. Each of the content repositories can conform to a uniform data structure, but can have differing values for selected fields of the data structure. As such, the method can include mapping the selected content repository for data access during the transaction. For example, mapping the selected content repository for data access during the transaction can include setting the selected content repository as a data source for data access logic in the application.
摘要翻译：本发明的实施例提供了一种用于内容存储库映射方法的方法，系统和计算机程序产品。在一个实施例中，该方法可以包括获得事务的上下文，并且基于获得的上下文从一组内容存储库中选择内容存储库。每个内容存储库可以符合统一的数据结构，但是对于数据结构的所选字段可以具有不同的值。因此，该方法可以包括在事务期间映射所选择的内容存储库以进行数据访问。例如，在事务期间映射用于数据访问的所选择的内容存储库可以包括将所选择的内容存储库设置为应用程序中数据访问逻辑的数据源。

34. 发明申请

US20070099367A1 ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN 110 Si UNDER BIAXIAL COMPRESSIVE STRAIN 失效
标题翻译： 110 Si在双轴压缩应变下的电子和孔隙机制的增强
公开(公告)号：US20070099367A1
公开(公告)日：2007-05-03
申请号：US11612309
申请日：2006-12-18
申请人： Victor Chan , Massimo Fischetti , John Hergenrother , Meikei Ieong , Rajesh Rengarajan , Alexander Reznicek , Paul Solomon , Chun-yung Sung , Min Yang
发明人： Victor Chan , Massimo Fischetti , John Hergenrother , Meikei Ieong , Rajesh Rengarajan , Alexander Reznicek , Paul Solomon , Chun-yung Sung , Min Yang
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L29/7842 , H01L21/823807 , H01L29/045 , H01L29/6659 , H01L29/7833 , H01L29/7843 , H01L29/7846 , H01L29/78684
摘要： The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing layer; and creating a biaxial strain in the silicon-containing layer.
摘要翻译：本发明提供了具有增强的电子和空穴迁移率的半导体材料，其包含具有<110>晶体取向和双轴压缩应变的含Si层。本文中使用的术语“双轴压应力”来描述在制造半导体材料期间由含Si层引起的纵向压应力和横向应力引起的净应力。本发明的另一方面涉及形成本发明的半导体材料的方法。本发明的方法包括提供含硅<110>层的步骤; 并在含硅<110>层中产生双轴应变。

35. 发明授权

US07211869B2 Increasing carrier mobility in NFET and PFET transistors on a common wafer 有权
标题翻译：在普通晶圆上增加NFET和PFET晶体管的载流子迁移率
公开(公告)号：US07211869B2
公开(公告)日：2007-05-01
申请号：US11110767
申请日：2005-04-21
申请人： Victor Chan , Haining Yang
发明人： Victor Chan , Haining Yang
IPC分类号： H01L31/00
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823828 , H01L27/092
摘要： Enhanced carrier mobility in transistors of differing (e.g. complementary) conductivity types is achieved on a common chip by provision of two or more respective stressed layers, such as etch stop layers, overlying the transistors with stress being wholly or partially relieved in portions of the respective layers, preferably by implantations with heavy ions such as germanium, arsenic, xenon, indium, antimony, silicon, nitrogen oxygen or carbon in accordance with a block-out mask. The distribution and small size of individual areas of such stressed structures also prevents warping or curling of even very thin substrates.
摘要翻译：通过提供两个或更多个相应的应力层（例如覆盖晶体管的相应的应力层，例如蚀刻停止层），在共同的芯片上实现增强的不同（例如互补）导电类型的晶体管中的载流子迁移率，其中应力在相应的部分中被部分地完全或部分缓解层，优选通过根据阻挡掩模的重离子如锗，砷，氙，铟，锑，硅，氮氧或碳的注入。这种应力结构的各个区域的分布和小尺寸也防止甚至非常薄的基底的翘曲或卷曲。

36. 发明申请

US20070040235A1 Dual trench isolation for CMOS with hybrid orientations 审中-公开
标题翻译：具有混合取向的CMOS的双沟槽隔离
公开(公告)号：US20070040235A1
公开(公告)日：2007-02-22
申请号：US11207216
申请日：2005-08-19
申请人： Victor Chan , Meikei Ieong , Rajesh Rengarajan , Alexander Reznicek , Chun-yung Sung , Min Yang
发明人： Victor Chan , Meikei Ieong , Rajesh Rengarajan , Alexander Reznicek , Chun-yung Sung , Min Yang
IPC分类号： H01L29/04 , H01L21/76
CPC分类号： H01L21/76229
摘要： The present invention provides a semiconductor structure in which different types of devices are located upon a specific crystal orientation of a hybrid substrate that enhances the performance of each type of device. In the semiconductor structure of the present invention, a dual trench isolation scheme is employed whereby a first trench isolation region of a first depth isolates devices of different polarity from each other, while second trench isolation regions of a second depth, which is shallower than the first depth, are used to isolate devices of the same polarity from each other. The present invention further provides a dual trench semiconductor structure in which pFETs are located on a (110) crystallographic plane, while nFETs are located on a (100) crystallographic plane. In accordance with the present invention, the devices of different polarity, i.e., nFETs and pFETs, are bulk-like devices.
摘要翻译：本发明提供了一种半导体结构，其中不同类型的器件位于混合衬底的特定晶体取向上，这增强了每种器件的性能。在本发明的半导体结构中，采用双沟槽隔离方案，由此第一深度的第一沟槽隔离区将彼此不同极性的器件隔离，而第二深度的第二沟槽隔离区比第第一深度用于隔离相同极性的设备。本发明还提供一种双沟槽半导体结构，其中pFET位于（110）结晶平面上，而nFET位于（100）晶面上。根据本发明，不同极性的器件，即nFET和pFETs是大块状器件。

37. 发明授权

US07161169B2 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain 有权
标题翻译：在双轴压缩应变下，增强了<110> Si中的电子和空穴迁移率
公开(公告)号：US07161169B2
公开(公告)日：2007-01-09
申请号：US10980220
申请日：2004-11-03
申请人： Victor Chan , Massimo V. Fischetti , John M. Hergenrother , Meikei Leong , Rajesh Rengarajan , Alexander Reznicek , Paul M. Solomon , Chun-yung Sung , Min Yang
发明人： Victor Chan , Massimo V. Fischetti , John M. Hergenrother , Meikei Leong , Rajesh Rengarajan , Alexander Reznicek , Paul M. Solomon , Chun-yung Sung , Min Yang
IPC分类号： H01L29/06 , H01L31/0328
CPC分类号： H01L29/7842 , H01L21/823807 , H01L29/045 , H01L29/6659 , H01L29/7833 , H01L29/7843 , H01L29/7846 , H01L29/78684
摘要： The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing layer; and creating a biaxial strain in the silicon-containing layer.
摘要翻译：本发明提供了具有增强的电子和空穴迁移率的半导体材料，其包含具有<110>晶体取向和双轴压缩应变的含Si层。本文中使用的术语“双轴压应力”来描述在制造半导体材料期间由含Si层引起的纵向压应力和横向应力引起的净应力。本发明的另一方面涉及形成本发明的半导体材料的方法。本发明的方法包括提供含硅<110>层的步骤; 并在含硅<110>层中产生双轴应变。

38. 发明申请

US20060074806A1 Managing a virtual persona through selective association 失效
公开(公告)号：US20060074806A1
公开(公告)日：2006-04-06
申请号：US10953990
申请日：2004-09-29
申请人： Ross McKegney , Darshanand Khusial , Lev Mirlas , Victor Chan
发明人： Ross McKegney , Darshanand Khusial , Lev Mirlas , Victor Chan
IPC分类号： H04K1/00 , H04L9/00 , G06Q99/00
CPC分类号： G06Q10/10 , G06F19/00 , G06Q30/0601 , G06Q50/24
摘要： A technique is provided to generally provide user support across multiple accounts by allowing a single person or user to represent multiple organizations. An embodiment may typically provide support for a user to act on behalf of an account in the form of a virtual persona and also to provide the ability to manage the assignment of access rights allowing only prescribed privileged users to act on behalf of an account. This may then be accomplished through registration of a single identity for the user or person on the system, while allowing that person to then select the desired organization to represent for a particular session (which will be stored in the user's session).

39. 发明申请

US20060040497A1 Material for contact etch layer to enhance device performance 审中-公开
标题翻译：用于接触蚀刻层的材料以增强器件性能
公开(公告)号：US20060040497A1
公开(公告)日：2006-02-23
申请号：US11253622
申请日：2005-10-20
申请人： Ashima Chakravarti , Shreesh Narasimha , Victor Chan , Judson Holt , Satya Chakravarti
发明人： Ashima Chakravarti , Shreesh Narasimha , Victor Chan , Judson Holt , Satya Chakravarti
IPC分类号： H01L21/44
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02271 , H01L21/02274 , H01L21/3185 , H01L29/7843
摘要： Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and/or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3 can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.
摘要翻译：氮化膜的应力水平作为以下两个或更多个的函数来调节：用于制造氮化物膜的原料前体的同一性; 同时处理起始原料前体的含氮前体; 原料前体与含氮前体的比例; 电影种植的一系列CVD条件; 和/或薄膜生长的厚度。通过使含有硅，氮和碳（例如双叔丁基氨基硅烷（BTBAS））的化合物与NH 3 N 3反应制备的快速热化学气相沉积（RTCVD）膜可以提供有利的性质，例如在蚀刻停止应用中作为高应力和优异的性能。氨处理的BTBAS膜在提供高应力性能方面特别优异，并且在反复退火时还具有高应力性能的可维护性。

40. 发明授权

US06985899B2 Method and system for composing a query for a database and traversing the database 有权
公开(公告)号：US06985899B2
公开(公告)日：2006-01-10
申请号：US09996127
申请日：2001-11-27
申请人： Victor Chan , Fen Wang , Mark W. Hubbard
发明人： Victor Chan , Fen Wang , Mark W. Hubbard
IPC分类号： G06F17/30
CPC分类号： G06F17/30433 , G06F17/30477 , Y10S706/922 , Y10S707/99933 , Y10S707/99934 , Y10S707/99935 , Y10S707/99936 , Y10S707/99943 , Y10S707/99945
摘要： A system and method of composing a query object for application against a database is provided. The method composes a selection clause for the query. Next, a criteria clause for the query is generated, with the criteria clause comprising input criteria related to the query, additional criteria specified against the query, and generated criteria based on a joint relationship. Next a source clause utilizing elements in the database accessed by the query is generated. A database traversal system and method is provided. The method identifies all tables directly accessible by each table and creates a data structure comprising an entry for each table. The entry comprises an identification field for each table and a link field identifying all tables directly accessible by each table. The data structure is traversed and an optimum path of the traversal paths utilizing data obtained from traversing the data structure is identified.

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