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31. 发明授权

US07852663B2 Nonvolatile programmable logic gates and adders 有权
标题翻译：非易失性可编程逻辑门和加法器
公开(公告)号：US07852663B2
公开(公告)日：2010-12-14
申请号：US12125975
申请日：2008-05-23
申请人： Haiwen Xi , Yang Li , Song S. Xue
发明人： Haiwen Xi , Yang Li , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： H03K19/173 , G11C11/161 , G11C11/1673
摘要： Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer.
摘要翻译：具有至少一个输入元件和输出元件的自旋扭矩磁逻辑器件。通过输入元件施加电流，并测量输出元件两端产生的电阻或电压。输入元件包括自由层，并且输出元件包括电连接到输入元件的自由层的自由层。输入元件和输出元件的自由层可以通过静磁耦合电连接，或者可以物理耦合。在一些实施例中，输出元件可以具有多于一个的自由层。

32. 发明授权

US07825397B2 Short bridge phase change memory cells 有权
标题翻译：短桥相变存储单元
公开(公告)号：US07825397B2
公开(公告)日：2010-11-02
申请号：US12125970
申请日：2008-05-23
申请人： Haiwen Xi , Song S. Xue
发明人： Haiwen Xi , Song S. Xue
IPC分类号： H01L45/00
CPC分类号： H01L45/16 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/1253 , H01L45/144
摘要： Random access memory cells having a short phase change bridge structure and methods of making the bridge structure via shadow deposition. The short bridge structure reduces the heating efficiency needed to switch the logic state of the memory cell. In one particular embodiment, the memory cell has a first electrode and a second electrode with a gap therebetween. The first electrode has an end at least partially non-orthogonal to the substrate and the second electrode has an end at least partially non-orthogonal to the substrate. A phase change material bridge extends over at least a portion of the first electrode, over at least a portion of the second electrode, and within the gap. An insulative material encompasses at least a portion of the phase change material bridge.
摘要翻译：具有短相变桥结构的随机存取存储单元和通过阴影沉积制造桥结构的方法。短桥结构降低了切换存储单元的逻辑状态所需的加热效率。在一个特定实施例中，存储单元具有第一电极和在其之间具有间隙的第二电极。第一电极具有至少部分地与衬底非正交的端部，并且第二电极具有至少部分地与衬底非正交的端部。相变材料桥在第一电极的至少一部分上延伸到第二电极的至少一部分上，并在间隙内延伸。绝缘材料包含相变材料桥的至少一部分。

33. 发明申请

US20100033872A1 PATTERNED MEDIA BITS WITH CLADDING SHELL 失效
标题翻译：带有隐形外壳的图案介质
公开(公告)号：US20100033872A1
公开(公告)日：2010-02-11
申请号：US12496505
申请日：2009-07-01
申请人： Haiwen Xi , Kaizhong Gao , Song S. Xue
发明人： Haiwen Xi , Kaizhong Gao , Song S. Xue
IPC分类号： G11B5/82 , B05D5/12
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/743 , G11B5/746 , G11B5/855
摘要： A bit patterned media (BPM) includes many magnetic dots arranged in tracks on a substrate. The magnetic dots each have a hard magnetic core, a soft magnetic cladding surrounding the core and a thin non-magnetic layer that separates the hard magnetic core from the soft magnetic ring. The soft magnetic cladding stabilizes the magnetization at the edges of the hard magnetic core to improve the signal to noise ratio of the magnetic dots. The soft magnetic rings also narrow the magnetic field of the dots which reduces the space requirements and allows more dots to be placed on the substrate.
摘要翻译：位图案介质（BPM）包括布置在基板上的轨道中的许多磁点。磁点各自具有硬磁芯，围绕芯的软磁性包层以及将硬磁芯与软磁环分离的薄的非磁性层。软磁性包层使硬磁芯的边缘处的磁化稳定，以提高磁点的信噪比。软磁环还使点的磁场变窄，这减小了空间要求，并允许更多的点放置在基板上。

34. 发明申请

US20090315088A1 FERROELECTRIC MEMORY USING MULTIFERROICS 失效
标题翻译：使用多媒体的电磁记忆
公开(公告)号：US20090315088A1
公开(公告)日：2009-12-24
申请号：US12144697
申请日：2008-06-24
申请人： Haiwen Xi , Wei Tian , Yang Li , Insik Jin , Song S. Xue
发明人： Haiwen Xi , Wei Tian , Yang Li , Insik Jin , Song S. Xue
IPC分类号： H01L29/00
CPC分类号： G11C11/22 , H01F10/22 , H01F10/24 , H01L29/78391
摘要： Ferroelectric memory using multiferroics is described. The multiferrroic memory includes a substrate having a source region, a drain region and a channel region separating the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A data storage cell having a composite multiferroic layer is adjacent to the electrically insulating layer. The electrically insulating layer separated the data storage cell form the channel region. A control gate electrode is adjacent to the data storage cell. The data storage cell separates at least a portion of the control gate electrode from the electrically insulating layer.
摘要翻译：描述了使用多铁性的铁电存储器。多层存储器包括具有源极区，漏极区和分离源极区和漏极区的沟道区的衬底。电绝缘层与源极区，漏极区和沟道区相邻。具有复合多铁层的数据存储单元与电绝缘层相邻。电绝缘层从通道区域分离数据存储单元。控制栅电极与数据存储单元相邻。数据存储单元将控制栅电极的至少一部分与电绝缘层分离。

35. 发明申请

US20090290411A1 WRITE VERIFY METHOD FOR RESISTIVE RANDOM ACCESS MEMORY 有权
标题翻译：用于电阻随机访问存储器的写作验证方法
公开(公告)号：US20090290411A1
公开(公告)日：2009-11-26
申请号：US12123647
申请日：2008-05-20
申请人： Haiwen Xi , Song S. Xue
发明人： Haiwen Xi , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5664 , G11C11/5685 , G11C13/0007 , G11C13/0014 , G11C13/0016 , G11C13/0064 , G11C2013/0073 , G11C2211/5621 , G11C2213/31 , G11C2213/32
摘要： Write verify methods for resistance random access memory (RRAM) are disclosed. The methods include applying a reset operation voltage pulse across a RRAM cell to change a resistance of the RRAM cell from a low resistance state to a high resistance state and setting a counter to zero. Then the method includes applying a forward resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance value less than a selected lower resistance limit value and adding one to the counter. This step is repeated until either the counter reaches a predetermined number or until the high resistance state resistance value is greater than the lower resistance limit value. The method also includes applying a reverse resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance values is greater than a selected upper resistance limit value and adding one to the counter. The reverse resetting voltage pulse has a second polarity being opposite the first polarity. This step is repeated until either the counter reaches a predetermined number or until all the high resistance state resistance value is less than the upper resistance limit value.
摘要翻译：公开了电阻随机存取存储器（RRAM）的写验证方法。所述方法包括在RRAM单元之间施加复位操作电压脉冲，以将RRAM单元的电阻从低电阻状态改变为高电阻状态，并将计数器设置为零。然后，该方法包括如果RRAM单元具有小于所选择的较低电阻极限值的高电阻状态电阻值并且将一个加到计数器上，则在RRAM单元之间施加正向复位电压脉冲。重复该步骤直到计数器达到预定数量，或者直到高电阻状态电阻值大于下限电阻值。该方法还包括如果RRAM单元具有高电阻状态电阻值大于所选上限电阻值并将一个加到计数器上，则在RRAM单元之间施加反向复位电压脉冲。反向复位电压脉冲具有与第一极性相反的第二极性。重复该步骤直到计数器达到预定数量，或者直到所有高电阻状态电阻值都小于上限电阻值。

36. 发明申请

US20080225584A1 Magnetic storage element responsive to spin polarized current 有权
标题翻译：响应于自旋极化电流的磁存储元件
公开(公告)号：US20080225584A1
公开(公告)日：2008-09-18
申请号：US11724740
申请日：2007-03-16
申请人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Song S. Xue , Sining Mao
发明人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Song S. Xue , Sining Mao
IPC分类号： G11C11/15
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.
摘要翻译：本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层，当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

37. 发明申请

US20080137224A1 High frequency field assisted write device 有权
标题翻译：高频场辅助写装置
公开(公告)号：US20080137224A1
公开(公告)日：2008-06-12
申请号：US11634767
申请日：2006-12-06
申请人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Sining Mao , Patrick J. Ryan , Song S. Xue , Shaoping Li
发明人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Sining Mao , Patrick J. Ryan , Song S. Xue , Shaoping Li
IPC分类号： G11B5/02
CPC分类号： G11B5/1278 , G11B2005/001
摘要： A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.
摘要翻译：磁性写入器包括写入元件和邻近写入元件设置的振荡器件。第一振荡装置包括第一磁性层，具有包括垂直于第一磁性层的主平面的分量的磁化矢量的第二磁性层。设置在第一磁性层和第二磁性层之间的第一非磁性层。当电流垂直于第一磁性层的主平面时，第一振荡装置产生高频振荡场。

38. 发明授权

US08179716B2 Non-volatile programmable logic gates and adders 有权
标题翻译：非易失性可编程逻辑门和加法器
公开(公告)号：US08179716B2
公开(公告)日：2012-05-15
申请号：US12953544
申请日：2010-11-24
申请人： Haiwen Xi , Yang Li , Song S. Xue
发明人： Haiwen Xi , Yang Li , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： H03K19/173 , G11C11/161 , G11C11/1673
摘要： Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer.
摘要翻译：具有至少一个输入元件和输出元件的自旋扭矩磁逻辑器件。通过输入元件施加电流，并测量输出元件两端产生的电阻或电压。输入元件包括自由层，并且输出元件包括电连接到输入元件的自由层的自由层。输入元件和输出元件的自由层可以通过静磁耦合电连接，或者可以物理耦合。在一些实施例中，输出元件可以具有多于一个的自由层。

39. 发明授权

US08069492B2 Spin-torque probe microscope 有权
标题翻译：旋转力矩探头显微镜
公开(公告)号：US08069492B2
公开(公告)日：2011-11-29
申请号：US12059407
申请日：2008-03-31
申请人： Haiwen Xi , Song S. Xue
发明人： Haiwen Xi , Song S. Xue
IPC分类号： G01Q60/08
CPC分类号： G01Q60/52 , G01N24/10 , G01R33/323
摘要： A spin-torque probe microscope and methods of using the same are described. The spin-torque probe microscope includes a cantilever probe body, a magnetic tip disposed at a distal end of the cantilever probe body, an electrically conductive sample disposed proximate to the magnetic tip, an electrical circuit providing a spin-polarized electron current to the electrically conductive sample, and a vibration detection element configured to sense vibration frequency of the cantilever probe body. The spin-polarized electron current is sufficient to alter a local electron spin or magnetic moment within the electrically conductive sample and be sensed by the magnetic tip.
摘要翻译：描述了自旋扭矩探针显微镜及其使用方法。旋转扭矩探针显微镜包括悬臂探针体，设置在悬臂探头主体的远端的磁尖，靠近磁尖设置的导电样品，向电气提供自旋极化电子电流的电路导电样品和被配置为感测悬臂探针体的振动频率的振动检测元件。自旋极化电子电流足以改变导电样品内的局部电子自旋或磁矩，并由磁尖检测。

40. 发明授权

US07848139B2 Memory device structures including phase-change storage cells 有权
标题翻译：包括相变存储单元的存储器件结构
公开(公告)号：US07848139B2
公开(公告)日：2010-12-07
申请号：US12233389
申请日：2008-09-18
申请人： Yizhang Yang , Haiwen Xi , Yiming Shi , Kaizhong Gao , Jun Ouyang , Song S. Xue
发明人： Yizhang Yang , Haiwen Xi , Yiming Shi , Kaizhong Gao , Jun Ouyang , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C13/0004 , G11C13/0069 , G11C2013/0045 , G11C2013/0078 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/1226 , H01L45/1286 , H01L45/144
摘要： A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.
摘要翻译：存储器件的导电写入线包括用于设置和复位器件的相变材料（PCM）存储单元的电阻加热部分。电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸，并提供电绝缘，同时允许电阻加热部分和存储单元之间的热耦合。写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度，电阻加热部分在其之间延伸。存储单元的侧面可以限定写入线通过的存储单元的通道，使得电阻加热部分位于通道内。

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