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    • 31. 发明授权
    • Fine pattern forming method
    • 精细图案形成方法
    • US5316891A
    • 1994-05-31
    • US871199
    • 1992-04-20
    • Kazuhiko HashimotoMasayuki Endo
    • Kazuhiko HashimotoMasayuki Endo
    • H01L21/027G03F7/075G03C5/00
    • G03F7/0757Y10S430/126
    • A high molecular organic film as the bottom layer is coated on a semiconductor silicone substrate in a thickness of 2 .mu.m and a solution of 2,4,6-tris(trichloromethyl)-1,3,5-triazine as a crosslinking agent and poly(p-hydroxyphenylsilsesquioxane) in ethyl cellosolve acetate is coated thereon in a thickness of 0.3 .mu.m as the top layer electron beam resist. After exposure to electron beams, the resulting wafer is developed with an aqueous organic alkaline solution to give an accurate and fine negative resist pattern. Etching of the bottom layer using this resist pattern as a mask can readily form a fine resist pattern accurately in a high aspect ratio.
    • 将作为底层的高分子有机膜涂覆在厚度为2μm的半导体硅酮基底上,并将2,4,6-三(三氯甲基)-1,3,5-三嗪的溶液作为交联剂和 在乙基溶纤剂乙酸酯中的聚(对羟基苯基倍半硅氧烷)以0.3μm的厚度涂覆在其上作为顶层电子束抗蚀剂。 在暴露于电子束之后,用有机碱性水溶液显影所得的晶片,得到精确和精细的负抗蚀剂图案。 使用该抗蚀剂图案作为掩模的底层的蚀刻可以以高纵横比容易地精确地形成精细的抗蚀剂图案。
    • 36. 发明授权
    • Semiconductor integrated circuit with an internal voltage converter
circuit
    • 具有内部电压转换器电路的半导体集成电路
    • US4691123A
    • 1987-09-01
    • US818670
    • 1986-01-14
    • Kazuhiko Hashimoto
    • Kazuhiko Hashimoto
    • H01L21/822G05F1/46G11C5/14G11C11/407H01L21/8234H01L27/04H01L27/088G05F3/16
    • G11C5/147G05F1/465
    • A semiconductor memory device of the invention is switched to an operation mode or a standby mode in response to a control signal. When the control signal indicates the standby mode, a voltage converter circuit becomes inoperative, and an external power source voltage is directly supplied to an internal circuit (e.g., a memory circuit). However, in the standby mode the internal circuit has low power consumption, and the voltage converter circuit has no power consumption, thus rendering total power consumption of the semiconductor device low. When the control signal indicates the operation mode, the voltage converter circuit drops the external power source voltage and supplies it to the internal circuit. Thus, no hot electrons are generated in elements constituting the internal circuit (e.g., CMOS transistors), and degradation of the elements is prevented.
    • 本发明的半导体存储器件响应控制信号切换到操作模式或待机模式。 当控制信号指示待机模式时,电压转换器电路不起作用,并且外部电源电压被直接提供给内部电路(例如存储电路)。 然而,在待机模式下,内部电路具有低功耗,并且电压转换器电路没有功耗,因此使半导体器件的总功耗降低。 当控制信号指示操作模式时,电压转换器电路会降低外部电源电压并将其提供给内部电路。 因此,在构成内部电路的元件(例如,CMOS晶体管)中不产生热电子,并且防止元件的劣化。
    • 37. 发明授权
    • Photoresist composition
    • 光刻胶组成
    • US08426106B2
    • 2013-04-23
    • US12903146
    • 2010-10-12
    • Tatsuro MasuyamaKazuhiko HashimotoJunji Shigematsu
    • Tatsuro MasuyamaKazuhiko HashimotoJunji Shigematsu
    • G03F7/039G03F7/20G03F7/30G03F7/38
    • C08F120/34C07C251/66C07C309/70G03F7/0045G03F7/0046G03F7/0397G03F7/2041
    • A Photoresist composition comprising a polymer comprising a structural unit derived from a compound represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, R2 represents a C6-C12 aromatic hydrocarbon group which can have one or more substituents, R3 represents a cyano group or a C1-C12 hydrocarbon group which can have one or more substituents and which can contain one or more heteroatoms, A1 represents a single bond, —(CH2)g—CO—O—* or —(CH2)h—O—CO—(CH2)i—CO—O—* wherein g, h and i each independently represent an integer of −1 to 6 and * represents a binding position to the nitrogen atom, a resin having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid, and an acid generator.
    • 一种光致抗蚀剂组合物,其包含包含衍生自由式(I)表示的化合物的结构单元的聚合物:其中R 1表示氢原子或甲基,R 2表示可以具有一个或多个取代基的C 6 -C 12芳族烃基, R3表示可以具有一个或多个取代基且可以含有一个或多个杂原子的氰基或C 1 -C 12烃基,A 1表示单键, - (CH 2)g -CO-O- *或 - (CH 2) hO-CO-(CH2)i-CO-O- *其中g,h和i各自独立地表示1-6的整数,*表示与氮原子的结合位置,具有酸不稳定基团的树脂和 在碱性水溶液中不溶或难溶,但通过酸和酸生成剂可溶于碱水溶液。
    • 38. 发明申请
    • COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
    • 化合物,树脂,耐蚀组合物和用于生产耐腐蚀图案的方法
    • US20110053086A1
    • 2011-03-03
    • US12873919
    • 2010-09-01
    • Kazuhiko HashimotoKoji Ichikawa
    • Kazuhiko HashimotoKoji Ichikawa
    • G03F7/004C07C69/88C07C69/96C07C69/017C08F20/10G03F7/20
    • C07C69/84C07C69/54C07C69/96C07C2603/74C08F20/30G03F7/0045G03F7/0046G03F7/0397
    • A compound of the present invention is represented by the formula (A); wherein R1 represents a hydrogen atom or a C1 to C6 alkyl group; Z1 represents a single bond, —CO—O—* or —CO—O—(CH2)k—CO—O—*; Z2 represents a single bond, *—O—CO—, *—CO—O—, *—O—(CH2)k—CO—, *—CO—(CH2)k—O—, *—O—(CH2)k—CO—O—, *—O—CO—(CH2)k—O— or *—O—CO—(CH2)k—O—CO—; k represents an integer of 1 to 6; * represents a binding position to W; W represents a C4 to C36 (n+1) valent alicyclic hydrocarbon group or a C6 to C18 (n+1) valent aromatic hydrocarbon group, one or more hydrogen atoms contained in the alicyclic hydrocarbon group and the aromatic hydrocarbon group may be replaced by a halogen atom, a C1 to C12 alkyl group, a C1 to C12 alkoxy group, a C2 to C4 acyl group or —OR10; R10 represents a hydrogen atom or a group represented by the formula (R2-2); R2 represents a hydrogen atom, a group represented by the formula (R2-1) or (R2-2); n represents an integer of 1 to 3; R4, R5 and R6 independently represent a C1 to C12 hydrocarbon group; R7 and R8 independently represent a hydrogen atom or a C1 to C12 hydrocarbon group; R9 represents a C1 to C14 hydrocarbon group.
    • 本发明的化合物由式(A)表示; 其中R1表示氢原子或C1-C6烷基; Z1表示单键,-CO-O- *或-CO-O-(CH2)k-CO-O- *; Z2表示单键,* -O-CO-,* -CO-O-,* -O-(CH2)k-CO-,* -CO-(CH2)k-O-,* -O- )k-CO-O-,* -O-CO-(CH2)k-O-或* -O-CO-(CH2)k-O-CO-; k表示1〜6的整数, *表示与W的绑定位置; W表示C 4〜C 36(n + 1)价的脂环式烃基或C 6〜C 18(n + 1)价芳香族烃基,脂环式烃基和芳香族烃基所含有的1个以上氢原子可以被 卤素原子,C1〜C12烷基,C1〜C12烷氧基,C2〜C4酰基或-OR10; R 10表示氢原子或式(R2-2)表示的基团。 R2表示氢原子,式(R2-1)或(R2-2)表示的基团; n表示1〜3的整数, R4,R5和R6独立地表示C1〜C12烃基; R7和R8独立地表示氢原子或C1〜C12烃基; R9表示C1〜C14烃基。