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31. 发明授权

US5998100A Fabrication process using a multi-layer antireflective layer 失效
标题翻译：使用多层抗反射层的制造工艺
公开(公告)号：US5998100A
公开(公告)日：1999-12-07
申请号：US924652
申请日：1997-09-05
申请人： Tsukasa Azuma , Tokuhisa Ohiwa , Tetsuo Matsuda , David M. Dobuzinsky , Katsuya Okumura
发明人： Tsukasa Azuma , Tokuhisa Ohiwa , Tetsuo Matsuda , David M. Dobuzinsky , Katsuya Okumura
IPC分类号： G03F7/11 , G03F7/09 , H01L21/027 , G03F7/00
CPC分类号： G03F7/091 , H01L21/0276 , Y10S430/151 , Y10S438/945 , Y10S438/95
摘要： A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.
摘要翻译：制造工艺包括提供待制造的基板的步骤。然后在基板上形成多层抗反射层。在多层抗反射层上形成厚度小于850纳米的图案化抗蚀剂，并使用图案化的抗蚀剂作为掩模制造基板。

32. 发明授权

US5874363A Polycide etching with HCL and chlorine 失效
标题翻译：用HCL和氯气蚀刻多晶硅
公开(公告)号：US5874363A
公开(公告)日：1999-02-23
申请号：US645458
申请日：1996-05-13
申请人： Peter D. Hoh , Tokuhisa Ohiwa , Virinder Grewal , Bruno Spuler , Waldemar Kocon , Guadalupe Wiltshire
发明人： Peter D. Hoh , Tokuhisa Ohiwa , Virinder Grewal , Bruno Spuler , Waldemar Kocon , Guadalupe Wiltshire
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L49/00
CPC分类号： H01L21/32137
摘要： Metal silicide is removed at a faster rate than polysilicon in dry etching of metal silicide/polysilicon composites with an etching gas made from HCl and Cl.sub.2 at a volumetric flowrate ratio of HCl:Cl.sub.2 within the range of 3:1 to 5:1.
摘要翻译：在金属硅化物/多晶硅复合材料的干法蚀刻中，用HCl和Cl 2以HCl:Cl2的体积流量比在3:1至5:1的范围内制备的蚀刻气体，以比多晶硅更快的速度去除金属硅化物。

33. 发明授权

US5658389A Thin film forming method and apparatus 失效
标题翻译：薄膜形成方法和装置
公开(公告)号：US5658389A
公开(公告)日：1997-08-19
申请号：US136615
申请日：1993-10-15
申请人： Tetsuo Matsuda , Haruo Okano , Tokuhisa Ohiwa
发明人： Tetsuo Matsuda , Haruo Okano , Tokuhisa Ohiwa
IPC分类号： C23C16/50 , C23C14/22 , C23C16/452 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： H01J37/32422 , C23C14/221 , C23C16/452 , H01J37/32357
摘要： According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.
摘要翻译：根据薄膜形成方法，至少一种类型的气体被激活以产生具有正或负电荷的多种物质。多个物种通过电场或磁场提取特定物种。特定的物质被提供给基底表面。此后，特定物质彼此化学反应以形成薄膜。使用对应于通过电场的物质的质量与电荷的比率的轨迹差进行该提取。

34. 发明授权

US09177781B2 Plasma processing method and manufacturing method of semiconductor device 有权
标题翻译：半导体器件的等离子体处理方法和制造方法
公开(公告)号：US09177781B2
公开(公告)日：2015-11-03
申请号：US13178759
申请日：2011-07-08
申请人： Shigeru Tahara , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
发明人： Shigeru Tahara , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
IPC分类号： H01L21/02
CPC分类号： H01L21/02071
摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.
摘要翻译：进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

35. 发明授权

US08513134B2 Semiconductor device producing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08513134B2
公开(公告)日：2013-08-20
申请号：US13013380
申请日：2011-01-25
申请人： Mitsuhiro Omura , Yumi Ohno , Takaya Matsushita , Tokuhisa Ohiwa
发明人： Mitsuhiro Omura , Yumi Ohno , Takaya Matsushita , Tokuhisa Ohiwa
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： In a semiconductor device producing method according to one embodiment, an insulating film containing silicon is formed on a semiconductor substrate, a resist is deposited on the insulating film, the resist is patterned into a predetermined pattern, and the insulating film is processed by a dry etching treatment in which gas containing C, F, Br, H, and O is used with the resist having the predetermined pattern as a mask. A deposited film in which C and Br are coupled is produced on the resist.
摘要翻译：在根据一个实施例的半导体器件制造方法中，在半导体衬底上形成含有硅的绝缘膜，在绝缘膜上沉积抗蚀剂，将抗蚀剂图案化成预定图案，并且通过干燥蚀刻处理，其中使用含有C，F，Br，H和O的气体，其中具有预定图案的抗蚀剂作为掩模。在抗蚀剂上制造其中C和Br连接的沉积膜。

36. 发明授权

US07628931B2 Processing method for conservation of processing gases 有权
标题翻译：处理气体的保存处理方法
公开(公告)号：US07628931B2
公开(公告)日：2009-12-08
申请号：US11197434
申请日：2005-08-05
申请人： Masashi Saito , Yusuke Hirayama , Itsuko Sakai , Tokuhisa Ohiwa
发明人： Masashi Saito , Yusuke Hirayama , Itsuko Sakai , Tokuhisa Ohiwa
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01L21/67069 , H01L21/76802 , H01L21/76897
摘要： In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.
摘要翻译：为了便于循环气体的控制，在具有用于经由多个气体供给孔向处理室供给处理气体的喷淋头200的处理装置100中，用于从处理室110排出处理气体的涡轮泵120 以及循环气体管道150，用于使由涡轮泵将从处理室排出的废气的至少一部分（循环气体Q2）返回到喷头，循环气体管道150设置有主气体供给系统，从气体源140经由多个主要气体出口孔h1和循环气体供给系统从气体源140供给到处理室，循环气体供给系统通过多个循环气体供给孔h2将循环气体供给到处理室，主气体供给系统循环气体供给系统构成为彼此独立的系统。由于一次气体和循环气体只能在处理室中混合，所以可以更容易地控制循环气体，而无需实施压力控制。

37. 发明申请

US20080137083A1 Process monitoring system, process monitoring method, and method for manufacturing semiconductor device 失效
公开(公告)号：US20080137083A1
公开(公告)日：2008-06-12
申请号：US12010938
申请日：2008-01-31
申请人： Takayuki Sakai , Masanobu Kibe , Tokuhisa Ohiwa
发明人： Takayuki Sakai , Masanobu Kibe , Tokuhisa Ohiwa
IPC分类号： G01J4/00
CPC分类号： H01L21/76802 , G01B11/0625 , G01B11/0683 , G01B11/22 , H01J37/32935 , H01J37/32972 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

38. 发明授权

US07349088B2 Process monitoring system, process monitoring method, and method for manufacturing semiconductor device 失效
标题翻译：过程监控系统，过程监控方法及制造半导体器件的方法
公开(公告)号：US07349088B2
公开(公告)日：2008-03-25
申请号：US11882275
申请日：2007-07-31
申请人： Takayuki Sakai , Masanobu Kibe , Tokuhisa Ohiwa
发明人： Takayuki Sakai , Masanobu Kibe , Tokuhisa Ohiwa
IPC分类号： G01J4/00
CPC分类号： H01L21/76802 , G01B11/0625 , G01B11/0683 , G01B11/22 , H01J37/32935 , H01J37/32972 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.
摘要翻译：过程监控系统具有被配置为保持要处理的对象的处理室，被配置为向对象发光的照明源，被配置为使光偏振的偏振器，具有双折射材料并设置在处理室上的监视器窗传播光，方向调整装置，被配置为调节光的偏振面与监视窗的光轴的方向之间的关系;以及监视信息处理器，被配置为检测从物体反射的光。

39. 发明授权

US07022616B2 High speed silicon etching method 有权
标题翻译：高速硅蚀刻法
公开(公告)号：US07022616B2
公开(公告)日：2006-04-04
申请号：US10380428
申请日：2001-09-13
申请人： Takanori Mimura , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa
发明人： Takanori Mimura , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa
IPC分类号： H01L21/302
CPC分类号： H01L21/32137 , H01J37/32082 , H01J37/32091 , H01J37/32165 , H01J37/3266 , H01J2237/3347 , H01L21/3065 , H01L21/3081
摘要： This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.
摘要翻译：本发明提供以下高速硅蚀刻方法。具有硅区域的待处理物体W被设定为与可以保持在真空中的处理室中的处理空间接触。将蚀刻气体引入工艺空间，形成气压为13Pa〜1333Pa（100mTorr〜10Torr）的气体气氛。在施加RF功率时产生等离子体。在等离子体中，离子的带电粒子数和自由基的数量之和增加，并且以比常规蚀刻更高的速度进行硅区的蚀刻。

40. 发明申请

US20050279731A1 Processing method for conservation of processing gases 有权
标题翻译：处理气体的保存处理方法
公开(公告)号：US20050279731A1
公开(公告)日：2005-12-22
申请号：US11197434
申请日：2005-08-05
申请人： Masashi Saito , Yusuke Hirayama , Itsuko Sakai , Tokuhisa Ohiwa
发明人： Masashi Saito , Yusuke Hirayama , Itsuko Sakai , Tokuhisa Ohiwa
IPC分类号： H01L21/3065 , B44C1/22 , H01L21/00
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01L21/67069 , H01L21/76802 , H01L21/76897
摘要： In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.
摘要翻译：为了便于循环气体的控制，在具有用于经由多个气体供给孔向处理室供给处理气体的喷淋头200的处理装置100中，用于从处理室110排出处理气体的涡轮泵120 以及循环气体管道150，用于将由涡轮泵从处理室排出的废气的至少一部分（循环气体Q 2）返回到喷头，循环气体管道150设置有主气体供给系统， Q 1经由多个主气体出口孔h 1和循环气体供给系统从气体源140供给到处理室，循环气体供给系统通过多个循环气体供给孔h 2将循环气体供给到处理室，主要供气系统和循环供气系统构成为彼此独立的系统。由于一次气体和循环气体只能在处理室中混合，所以可以更容易地控制循环气体，而无需实施压力控制。

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