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    • 35. 发明授权
    • Method of impregnating carbon electrodes
    • 浸渍碳电极的方法
    • US4103046A
    • 1978-07-25
    • US742084
    • 1976-11-16
    • Toru Taniguchi
    • Toru Taniguchi
    • C25B11/12C04B41/81C25B11/14C25C7/02
    • C25C7/02C25B11/14
    • In a method of impregnating carbon electrodes, a step of heating and drying carbon electrodes is separately juxtaposed to a step of pitch impregnation and cooling so that respective palettes are transported on separate courses for the respective steps, and at a position where said courses approach each other, the electrodes are transferred from a palette for said heating and drying step to a palette for said impregnation and cooling step so that the palette in the step of impregnation and cooling does not pass through a heating and drying furnace in the other step.
    • 在浸渍碳电极的方法中,加热和干燥碳电极的步骤与间距浸渍和冷却步骤分开并列,使得各个调色板在用于各个步骤的单独的路线上运输,并且在所述进程各自接近的位置 另一方面,将电极从用于所述加热和干燥步骤的调色板转移到用于所述浸渍和冷却步骤的调色板中,使得浸渍和冷却步骤中的调色板在另一步骤中不通过加热和干燥炉。
    • 38. 发明授权
    • Method of manufacturing semiconductor wafer
    • 制造半导体晶片的方法
    • US08283252B2
    • 2012-10-09
    • US12585400
    • 2009-09-14
    • Toru TaniguchiEtsuro MoritaSatoshi MatagawaSeiji HaradaIsoroku OnoMitsuhiro EndoFumihiko Yoshida
    • Toru TaniguchiEtsuro MoritaSatoshi MatagawaSeiji HaradaIsoroku OnoMitsuhiro EndoFumihiko Yoshida
    • H01L21/302
    • B24B37/08B24B37/042B24B37/24B24B37/28
    • A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.
    • 一种制造半导体晶片的方法,包括通过将半导体晶片保持在形成在载板上的晶片保持孔中,将前表面的光泽度与晶片的后表面的光泽度区分开的步骤, 所述半导体晶片的后表面通过驱动所述承载板而形成圆周运动,所述圆周运动与平行于所述承载板的表面的平面之间在其自身轴线上不旋转,所述平面布置在彼此面对的一对抛光构件之间,通过使用 具有与用于上表面板上的抛光构件和下表面板上的抛光构件之一的研磨体的抛光不同的半导体晶片沉降速率的研磨体,以同时抛光前表面和后表面 半导体晶片,或者通过区分上表面板的转速与下表面板的转速来区分。
    • 39. 发明申请
    • Method of manufacturing semiconductor wafer
    • 制造半导体晶片的方法
    • US20100009605A1
    • 2010-01-14
    • US12585400
    • 2009-09-14
    • Toru TaniguchiEtsuro MoritaSatoshi MatagawaSeiji HaradaIsoroku OnoMitsuhiro EndoFumihiko Yoshida
    • Toru TaniguchiEtsuro MoritaSatoshi MatagawaSeiji HaradaIsoroku OnoMitsuhiro EndoFumihiko Yoshida
    • H01L21/463
    • B24B37/08B24B37/042B24B37/24B24B37/28
    • A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.
    • 一种制造半导体晶片的方法,包括通过将半导体晶片保持在形成在载板上的晶片保持孔中,将前表面的光泽度与晶片的后表面的光泽度区分开的步骤, 所述半导体晶片的后表面通过驱动所述承载板而形成圆周运动,所述圆周运动与平行于所述承载板的表面的平面之间在其自身轴线上不旋转,所述平面布置在彼此面对的一对抛光构件之间,通过使用 具有与用于上表面板上的抛光构件和下表面板上的抛光构件之一的研磨体的抛光不同的半导体晶片沉降速率的研磨体,以同时抛光前表面和后表面 半导体晶片,或者通过区分上表面板的转速与下表面板的转速来区分。
    • 40. 发明授权
    • Method of polishing semiconductor wafers by using double-sided polisher
    • 使用双面抛光机研磨半导体晶片的方法
    • US07470169B2
    • 2008-12-30
    • US10296498
    • 2001-05-31
    • Toru TaniguchiIsoroku OnoSeiji Harada
    • Toru TaniguchiIsoroku OnoSeiji Harada
    • B24B1/00B24B7/00
    • B24B37/08B24B37/042B24B37/16
    • During polishing of the semiconductor wafer by using a double-sided polisher, a larger difference as compared to the prior art is created between a frictional resistance acting on a front surface of a silicon wafer from an upper surface plate side and a frictional resistance acting on a back surface of the silicon wafer from a lower surface plate side. Thereby, respective wafers can be rotated at as 0.1 - 1.0 rpm within corresponding wafer holding holes. Accordingly, the rotation of the wafer would not be suspended even if there were any defective condition induced during polishing. Further, partial variation or deviation in polishing volume particular in the outer periphery of the wafer would be hard to occur. Therefore, the polish-sagging is suppressed and thus the improved degree of flatness of the wafer could be obtained.
    • 在使用双面抛光机抛光半导体晶片时,与现有技术相比,在从上表面板侧作用在硅晶片的前表面上的摩擦阻力和作用于硅片的摩擦阻力之间产生较大的差异 硅晶片的背表面从下表面板侧。 因此,相应的晶片可以在相应的晶片保持孔内以0.1-1.0rpm的速度旋转。 因此,即使在抛光期间引起任何缺陷状况,晶片的旋转也不会被暂停。 此外,晶片外周特定的抛光体积的部分变化或偏差将难以发生。 因此,抑制了抛光下垂,因此可以获得晶片的平坦度的提高。