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    • 1. 发明授权
    • Method of manufacturing semiconductor wafer
    • 制造半导体晶片的方法
    • US08283252B2
    • 2012-10-09
    • US12585400
    • 2009-09-14
    • Toru TaniguchiEtsuro MoritaSatoshi MatagawaSeiji HaradaIsoroku OnoMitsuhiro EndoFumihiko Yoshida
    • Toru TaniguchiEtsuro MoritaSatoshi MatagawaSeiji HaradaIsoroku OnoMitsuhiro EndoFumihiko Yoshida
    • H01L21/302
    • B24B37/08B24B37/042B24B37/24B24B37/28
    • A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.
    • 一种制造半导体晶片的方法,包括通过将半导体晶片保持在形成在载板上的晶片保持孔中,将前表面的光泽度与晶片的后表面的光泽度区分开的步骤, 所述半导体晶片的后表面通过驱动所述承载板而形成圆周运动,所述圆周运动与平行于所述承载板的表面的平面之间在其自身轴线上不旋转,所述平面布置在彼此面对的一对抛光构件之间,通过使用 具有与用于上表面板上的抛光构件和下表面板上的抛光构件之一的研磨体的抛光不同的半导体晶片沉降速率的研磨体,以同时抛光前表面和后表面 半导体晶片,或者通过区分上表面板的转速与下表面板的转速来区分。
    • 2. 发明申请
    • Method of manufacturing semiconductor wafer
    • 制造半导体晶片的方法
    • US20100009605A1
    • 2010-01-14
    • US12585400
    • 2009-09-14
    • Toru TaniguchiEtsuro MoritaSatoshi MatagawaSeiji HaradaIsoroku OnoMitsuhiro EndoFumihiko Yoshida
    • Toru TaniguchiEtsuro MoritaSatoshi MatagawaSeiji HaradaIsoroku OnoMitsuhiro EndoFumihiko Yoshida
    • H01L21/463
    • B24B37/08B24B37/042B24B37/24B24B37/28
    • A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.
    • 一种制造半导体晶片的方法,包括通过将半导体晶片保持在形成在载板上的晶片保持孔中,将前表面的光泽度与晶片的后表面的光泽度区分开的步骤, 所述半导体晶片的后表面通过驱动所述承载板而形成圆周运动,所述圆周运动与平行于所述承载板的表面的平面之间在其自身轴线上不旋转,所述平面布置在彼此面对的一对抛光构件之间,通过使用 具有与用于上表面板上的抛光构件和下表面板上的抛光构件之一的研磨体的抛光不同的半导体晶片沉降速率的研磨体,以同时抛光前表面和后表面 半导体晶片,或者通过区分上表面板的转速与下表面板的转速来区分。
    • 3. 发明授权
    • Method of polishing semiconductor wafers by using double-sided polisher
    • 使用双面抛光机研磨半导体晶片的方法
    • US07470169B2
    • 2008-12-30
    • US10296498
    • 2001-05-31
    • Toru TaniguchiIsoroku OnoSeiji Harada
    • Toru TaniguchiIsoroku OnoSeiji Harada
    • B24B1/00B24B7/00
    • B24B37/08B24B37/042B24B37/16
    • During polishing of the semiconductor wafer by using a double-sided polisher, a larger difference as compared to the prior art is created between a frictional resistance acting on a front surface of a silicon wafer from an upper surface plate side and a frictional resistance acting on a back surface of the silicon wafer from a lower surface plate side. Thereby, respective wafers can be rotated at as 0.1 - 1.0 rpm within corresponding wafer holding holes. Accordingly, the rotation of the wafer would not be suspended even if there were any defective condition induced during polishing. Further, partial variation or deviation in polishing volume particular in the outer periphery of the wafer would be hard to occur. Therefore, the polish-sagging is suppressed and thus the improved degree of flatness of the wafer could be obtained.
    • 在使用双面抛光机抛光半导体晶片时,与现有技术相比,在从上表面板侧作用在硅晶片的前表面上的摩擦阻力和作用于硅片的摩擦阻力之间产生较大的差异 硅晶片的背表面从下表面板侧。 因此,相应的晶片可以在相应的晶片保持孔内以0.1-1.0rpm的速度旋转。 因此,即使在抛光期间引起任何缺陷状况,晶片的旋转也不会被暂停。 此外,晶片外周特定的抛光体积的部分变化或偏差将难以发生。 因此,抑制了抛光下垂,因此可以获得晶片的平坦度的提高。
    • 5. 发明申请
    • FUEL SUPPLYING APPARATUS FOR GAS ENGINE
    • 燃油发动机燃油供应装置
    • US20090308352A1
    • 2009-12-17
    • US12479892
    • 2009-06-08
    • Hiroaki KojimaMasanori FujinumaToru Taniguchi
    • Hiroaki KojimaMasanori FujinumaToru Taniguchi
    • F02M69/54
    • F02M31/18F02M21/0239F02M21/047F02M21/06Y02T10/126Y02T10/32
    • A fuel supplying apparatus is configured to supply a gas engine with gas fuel in such a manner that tar separated from the gas fuel is guided to the engine. The apparatus includes a primary regulator and a secondary regulator formed integrally with the primary regulator. The primary regulator communicates with the secondary regulator through a gas passage. The secondary regulator is disposed below the primary regulator. The secondary regulator has a gas inlet for taking in the gas fuel and the tar that have passed from the primary regulator through the gas passage. The secondary regulator has an orifice disposed below the gas inlet for discharging the gas fuel and the tar. The tar separated from the gas fuel flows from the primary regulator through the gas passage and the gas inlet into the secondary regulator and discharged out of the orifice into the engine.
    • 燃料供给装置被构造成以与从气体燃料分离的焦油被引导到发动机的方式向燃气发动机供给气体燃料。 该装置包括与主调节器一体形成的主调节器和次级调节器。 主调节器通过气体通道与次级调节器连通。 次级调节器设置在主调节器的下方。 次级调节器具有用于吸入气体燃料和从主调节器通过气体通道的焦油的气体入口。 次级调节器具有设置在气体入口下方的孔口,用于排出气体燃料和焦油。 与气体燃料分离的焦油从主调节器通过气体通道流入并进入二次调节器,并从孔中排出到发动机中。
    • 8. 发明授权
    • Manufacturing apparatus and method for fine hollow particles
    • 细中空颗粒的制造装置和方法
    • US5424336A
    • 1995-06-13
    • US996044
    • 1992-12-23
    • Toru Taniguchi
    • Toru Taniguchi
    • B01J13/02B01J13/18B01J14/00C08J9/28C08J9/32
    • B01J13/02B01J13/18
    • In manufacturing hollow particles, gas is supplied from a gas cylinder to a first tank under pressure for solution in a raw material liquid in the first tank for the particles. The resulting raw material liquid is supplied to a second tank where the liquid is stirred with a dispersing medium under pressure, thereby forming a compressed emulsion in the second tank. As the compressed emulsion is discharged to the outside, it is released from the compressed state so that the gas dissolved in corpuscles of the raw material liquid in the emulsion will come out as bubbles. Thus since the corpuscles in the emulsion become hollow particles, an emulsion containing fine hollow particles of the raw material liquid as nuclei is obtained. Therefore it is possible to obtain a large quantity of fine hollow particles with ease.
    • 在制造中空颗粒时,气体从气瓶向压力下的第一罐供给溶液,用于第一第一罐中的原料液。 所得到的原料液体被供给到第二罐,其中液体在分压介质中在压力下搅拌,从而在第二罐中形成压缩乳液。 当压缩乳液排出到外部时,其从压缩状态释放,使得溶解在乳液中的原料液体的微粒中的气体将作为气泡出来。 因此,由于乳液中的小粒变成中空粒子,因此获得含有作为原子核的原料液体的微细中空粒子的乳液。 因此,可以容易地获得大量的细小的中空颗粒。