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31. 发明申请

US20100206605A1 AQUEOUS ABSORPTIVE POLYMER-CONTAINING RESIN COMPOSITION-PRODUCING METHOD, AQUEOUS ABSORPTIVE POLYMER-CONTAINING RESIN COMPOSITION, AND POROUS SUBSTANCE-PRODUCING METHOD USING SAME AND POROUS SUBSTANCE, INSULATED ELECTRIC CABLE-PRODUCING METHOD, INSULATED ELECTRIC CABLE AND COAXIAL CABLE 有权
标题翻译：含有吸收性聚合物的树脂组合物的制造方法，含有吸收聚合物的树脂组合物和使用其的多孔物质的多孔物质生产方法，绝缘电缆生产方法，绝缘电缆和同轴电缆
公开(公告)号：US20100206605A1
公开(公告)日：2010-08-19
申请号：US12562567
申请日：2009-09-18
申请人： Yoshihisa Kato , Seikichi Tanno
发明人： Yoshihisa Kato , Seikichi Tanno
IPC分类号： H01B7/17 , B01J20/26 , B05D5/12 , C08F2/46 , H01B3/30
CPC分类号： C08J9/28 , C08J9/0061 , C08J2201/0504 , C08J2207/06 , C08J2300/14 , C08J2333/06 , H01B3/30
摘要： A method for producing an aqueous absorptive polymer-containing resin composition in which a resin composition is doped with an aqueous absorptive polymer includes causing the aqueous absorptive polymer to absorb and be swollen by water beforehand, and milling and microparticulating the water-absorbed and -swollen absorptive polymer at an ultrasonic flow pressure of not less than 50 MPa.
摘要翻译：制备含有吸水聚合物的树脂组合物的方法，其中树脂组合物掺杂有水性吸收聚合物包括使水性吸收性聚合物预先吸收并被水溶胀，并研磨和微粒化吸水和溶解吸收聚合物在超声波流动压力不低于50MPa。

32. 发明申请

US20090220817A1 Hydrated water-absorption polymer containing resin composition, porous body and insulated wire using same, method of making the wire and coaxial cable 有权
标题翻译：包含树脂组合物的水合吸水聚合物，使用其的多孔体和绝缘线，制造线和同轴电缆的方法
公开(公告)号：US20090220817A1
公开(公告)日：2009-09-03
申请号：US12314774
申请日：2008-12-16
申请人： Yoshihisa Kato , Yuki Honda , Tomiya Abe , Takao Miwa
发明人： Yoshihisa Kato , Yuki Honda , Tomiya Abe , Takao Miwa
IPC分类号： B32B15/02 , C08J9/16
CPC分类号： C08J9/0061 , C08J9/28 , C08J2201/0504 , C08J2471/00 , H01B3/427 , H01B3/447 , H01B7/288
摘要： A hydrated water-absorption polymer containing resin composition includes a liquid cross-link curable resin composition, and a water-absorption polymer dispersed in the liquid cross-link curable resin composition. The water-absorption polymer is preliminarily hydrated and swollen. The water-absorption polymer before being hydrated and swollen includes an average particle diameter of not more than 10 μm. The water-absorption polymer includes an amount of water absorption of 10 to 100 g/g.
摘要翻译：含有水合吸水性聚合物的树脂组合物包括液体交联固化树脂组合物和分散在液体交联树脂组合物中的吸水性聚合物。吸水性聚合物预先水合并溶胀。在水合和溶胀之前的吸水聚合物包括不超过10μm的平均粒径。吸水性聚合物的吸水量为10〜100g / g。

33. 发明授权

US07506099B2 Semiconductor storage apparatus 有权
标题翻译：半导体存储装置
公开(公告)号：US07506099B2
公开(公告)日：2009-03-17
申请号：US11519221
申请日：2006-09-12
申请人： Shunichi Iwanari , Yasushi Gohou , Yoshihisa Kato
发明人： Shunichi Iwanari , Yasushi Gohou , Yoshihisa Kato
IPC分类号： G06F12/00
CPC分类号： G06F12/123 , G06F2212/2022
摘要： A semiconductor storage apparatus comprising: a ferroelectric memory; an SRAM 30; a counter 41; a CAM 10 that judges whether or not a block of data requested to be read out from the ferroelectric memory is stored in the SRAM 30; a storage control unit 51 that, if a result of the judgment is negative, performs a control to read out the requested block of data from the ferroelectric memory and stores a copy of the read-out block of data into a unit storage area in the SRAM 30 that corresponds to the count value indicated by the counter 41; and a counter control unit 52 that causes the counter 41 to update the count value each time a result of the judgment is negative.
摘要翻译：一种半导体存储装置，包括：铁电存储器; 一个SRAM 30; 柜台41 判断从铁电存储器请求读出的数据块是否存储在SRAM30中的CAM10; 存储控制单元51，如果判断结果为否定，则执行控制以从强电介质存储器读出所请求的数据块，并将读出的数据块的副本存储在该单元存储区域中对应于由计数器41指示的计数值的SRAM 30; 以及计数器控制单元52，每当判断结果为负时，使计数器41更新计数值。

34. 发明申请

US20080292248A1 Optical fiber, optical fiber connection structure and optical connector 失效
标题翻译：光纤，光纤连接结构和光纤连接器
公开(公告)号：US20080292248A1
公开(公告)日：2008-11-27
申请号：US12068083
申请日：2008-02-01
申请人： Kanako Suzuki , Bing Yao , Kazumasa Ohsono , Yoshihisa Kato
发明人： Kanako Suzuki , Bing Yao , Kazumasa Ohsono , Yoshihisa Kato
IPC分类号： G02B6/36 , G02B6/02
CPC分类号： G02B6/02361 , G02B6/02376 , G02B6/02385 , G02B6/3806 , G02B6/381
摘要： An optical fiber includes a core, a clad having a plurality of air holes at a periphery of the core, and a hardening resin filled in a sealed portion at an end of the plurality of air holes. The hardening resin after hardening has a fill length of 7 mm to 8 mm. An optical fiber connection structure includes the optical fiber with an end face butt-connected to another optical fiber. An optical connector includes the optical fiber, and a ferrule to which the optical fiber is attached.
摘要翻译：光纤包括芯，在芯的周围具有多个气孔的包层，以及填充在多个气孔的端部的密封部分的硬化树脂。硬化后的硬化树脂的填充长度为7mm〜8mm。光纤连接结构包括具有与另一光纤对接的端面的光纤。光连接器包括光纤和光纤所附接的套圈。

35. 发明申请

US20080251816A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20080251816A1
公开(公告)日：2008-10-16
申请号：US12033481
申请日：2008-02-19
申请人： Hiroyuki Tanaka , Yukihiro Kaneko , Yoshihisa Kato
发明人： Hiroyuki Tanaka , Yukihiro Kaneko , Yoshihisa Kato
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28291 , H01L27/11502 , H01L29/6684 , H01L29/78391
摘要： A semiconductor memory device is composed of a field effect transistor using the interface between a ferroelectric film and a semiconductor film as the channel and including a gate electrode to which a voltage for controlling the polarization state of the ferroelectric film is applied and source/drain electrodes provided on both ends of the channel to detect a current flowing in the channel in accordance with the polarization state. The semiconductor film is made of a material having a spontaneous polarization and the direction of the spontaneous polarization is parallel with the interface between the ferroelectric film and the semiconductor film.
摘要翻译：半导体存储器件由使用铁电体膜和半导体膜之间的界面作为沟道的场效应晶体管构成，并且包括施加用于控制强电介质膜的极化状态的电压的栅电极和源极/漏极设置在通道的两端，以根据偏振状态检测在通道中流动的电流。半导体膜由具有自发极化的材料制成，并且自发极化的方向与铁电体膜和半导体膜之间的界面平行。

36. 发明申请

US20060195708A1 Memory system 有权
公开(公告)号：US20060195708A1
公开(公告)日：2006-08-31
申请号：US11338770
申请日：2006-01-25
申请人： Yoshihisa Kato , Yasushi Gohou , Masahiro Nakanishi , Masayuki Toyama , Shunichi Iwanari
发明人： Yoshihisa Kato , Yasushi Gohou , Masahiro Nakanishi , Masayuki Toyama , Shunichi Iwanari
IPC分类号： G06F1/26
CPC分类号： G06F1/3225 , G06F1/206 , G06F1/324 , G06F1/3275 , G06F1/3296 , Y02D10/126 , Y02D10/13 , Y02D10/14 , Y02D10/172
摘要： A memory system of the present invention includes a memory device having a nonvolatile memory and an access device which accesses the memory device. The memory device has a detection unit to detect a temperature of the memory device, a determination unit to determine an operating condition in accordance with the detected temperature and a notification unit to notify the access device of the determined operating condition. The access device has an interface unit to connect to the memory device and a controlling unit to control the interface unit in accordance with the notified operating condition from the memory device.

37. 发明申请

US20060067102A1 Non-volatile logic circuit and system LSI having the same 审中-公开
标题翻译：非易失性逻辑电路和具有相同的系统LSI
公开(公告)号：US20060067102A1
公开(公告)日：2006-03-30
申请号：US11234295
申请日：2005-09-26
申请人： Takayoshi Yamada , Yoshihisa Kato
发明人： Takayoshi Yamada , Yoshihisa Kato
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A non-volatile logic circuit according to the present invention is comprised of: a logic circuit block; and an input/output unit operable to input and output data between the logic circuit block and the input/output unit and between a data bus and the input/output unit, wherein the input/output unit has a non-volatile data holding circuit which holds the data. Furthermore, a system large-scale integration (LSI) according to the present invention is comprised of a plurality of non-volatile logic circuits which are connected with one another via a data bus.
摘要翻译：根据本发明的非易失性逻辑电路包括：逻辑电路块; 以及输入/输出单元，其可操作以在所述逻辑电路块和所述输入/输出单元之间以及在数据总线与所述输入/输出单元之间输入和输出数据，其中所述输入/输出单元具有非易失性数据保持电路，保存数据。此外，根据本发明的系统大规模集成（LSI）由通过数据总线彼此连接的多个非易失性逻辑电路组成。

38. 发明授权

US06707704B2 Semiconductor memory device and drive method therefor 失效
标题翻译：半导体存储器件及其驱动方法
公开(公告)号：US06707704B2
公开(公告)日：2004-03-16
申请号：US10392843
申请日：2003-03-21
申请人： Yoshihisa Kato , Yasuhiro Shimada , Takayoshi Yamada
发明人： Yoshihisa Kato , Yasuhiro Shimada , Takayoshi Yamada
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： The semiconductor memory device of the invention includes at least three memory cell blocks arranged in a word line direction. Each of the memory cell blocks includes a plurality of memory cells arranged in a bit line direction. Each of the memory cells includes a ferroelectric capacitor for storing data by displacement of polarization of a ferroelectric film and a selection transistor connected to one of paired electrodes of the ferroelectric capacitor. Each of the memory cell blocks also includes: a bit line, a sub-bit line and a source line extending in the bit line direction; and a read transistor having a gate connected to one end of the sub-bit line, a source connected to the source line, and a drain connected to one end of the bit line. The read transistor reads data by detecting the displacement of the polarization of the ferroelectric film of the ferroelectric capacitor of a data read memory cell from which data is read among the plurality of memory cells. The sub-bit lines of any two of the memory cell blocks are connected to each other via a sub-bit line coupling switch.
摘要翻译：本发明的半导体存储器件包括沿字线方向布置的至少三个存储单元块。每个存储单元块包括以位线方向排列的多个存储单元。每个存储单元包括用于通过铁电薄膜的极化位移存储数据的铁电电容器和连接到铁电体电容器的一对电极之一的选择晶体管。每个存储单元块还包括：位线，子位线和沿位线方向延伸的源极线; 以及读取晶体管，其具有连接到子位线的一端的栅极，连接到源极线的源极和连接到位线的一端的漏极。读取晶体管通过检测在多个存储单元中从其读取数据的数据读取存储单元的铁电电容器的铁电体的极化的位移来读取数据。任何两个存储单元块的子位线通过子位线耦合开关相互连接。

39. 发明授权

US06337459B1 Multi-layered anti-coking heat resisting metal tube and the method for manufacturing thereof 有权
标题翻译：多层抗焦化耐热金属管及其制造方法
公开(公告)号：US06337459B1
公开(公告)日：2002-01-08
申请号：US09546429
申请日：2000-04-10
申请人： F. X. Terwijn , Kiyoshi Morii , Yuko Takeuchi , Yoshihisa Kato , Hitoshi Hayakawa , Naoki Nishimura
发明人： F. X. Terwijn , Kiyoshi Morii , Yuko Takeuchi , Yoshihisa Kato , Hitoshi Hayakawa , Naoki Nishimura
IPC分类号： B23K902
CPC分类号： C10G9/16 , B21C37/06 , B21C37/154 , B23K10/027 , B23K35/304 , B23K2101/06 , C10G9/203 , F28F19/06
摘要： A multi-layered heat resistant metal tube is disclosed. This tube has excellent anti-coking characteristics and is suitable for use under the conditions where carbon tends to deposit and accumulate thereon due to contacting with hydrocarbons at a high temperature. The tube is made by forming weld-mounted overlaid layer of a Cr—Ni—Mo alloy by building-up welding over the inner surface and/or the outer surface of a substrate tube made of a heat resistant metal. The Cr—Ni—Mo alloy consists essentially of, by weight %, Cr: 36-49 wt %, Ni: 35-63 wt % and Mo: 0.5-5 wt %. Building-up welding is preferably carried out by PPW (Plasma Powder Welding) in which the filler metal is supplied in the form of powder.
摘要翻译：公开了一种多层耐热金属管。该管具有优异的抗焦化特性，适用于碳在高温下与碳氢化合物接触时易于沉积和积聚的条件下使用。该管通过在由耐热金属制成的基底管的内表面和/或外表面上形成焊接而形成Cr-Ni-Mo合金的焊接覆盖层。 Cr-Ni-Mo合金基本上由Cr：36-49wt％，Ni：35-63wt％，Mo：0.5-5wt％的重量％组成。堆焊优选通过以粉末形式供给填充金属的PPW（等离子体粉末焊接）进行。

40. 发明授权

US06226561B1 Production planning system 失效
公开(公告)号：US06226561B1
公开(公告)日：2001-05-01
申请号：US09100327
申请日：1998-06-19
申请人： Kenji Tamaki , Mitsuhiro Enomoto , Jun Tateishi , Yoshinao Arai , Yoshihisa Kato
发明人： Kenji Tamaki , Mitsuhiro Enomoto , Jun Tateishi , Yoshinao Arai , Yoshihisa Kato
IPC分类号： G06F1900
CPC分类号： G06Q10/06
摘要： A production planning system capable of adjusting a production plan comprises a data storage unit for storing production planning information, parts list information, parts stock information and parts warehousing schedule information; a MRP (material resource plan) explosion unit for calculating the required amount of material resources based on the production plan information and the parts list information stored in the data storage unit; and a superfluous parts adjusting unit for making adjustment to eliminate superfluous parts. The superfluous parts adjusting unit includes a superfluous parts calculation section for collating the required amount of material resources calculated by the MRP explosion unit with the parts stock information and the parts warehousing schedule information thereby to calculate the superfluous parts, and a superfluous parts elimination section for eliminating superfluous parts by changing the production plan based on the superfluous parts information calculated by the superfluous parts calculation section.

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