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31. 发明申请

US20120061713A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120061713A1
公开(公告)日：2012-03-15
申请号：US13222912
申请日：2011-08-31
申请人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/42
CPC分类号： H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。第一半导体层具有第一和第二部分。发光层设置在第二部分上。第二半导体层设置在发光层上。第一电极设置在第一部分上。第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。焊盘层连接到第二电极。焊盘层的透射率低于第二电极的透射率。第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

32. 发明申请

US20110215363A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110215363A1
公开(公告)日：2011-09-08
申请号：US12875632
申请日：2010-09-03
申请人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/36
CPC分类号： H01L33/36 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.
摘要翻译：根据一个实施例，半导体发光器件包括层叠结构体，第一电极和第二电极。层叠结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和发光部分。层叠结构体在第二半导体层的一侧具有第一主表面。第一电极设置在第一半导体上。第二电极设置在第二半导体层上。第一电极包括第一焊盘部分和从第一焊盘部分沿着第一延伸方向延伸的第一延伸部分。第一延伸部分包括第一宽度增加部分。第一宽度增加部分沿着与第一延伸方向正交的方向的宽度从第一焊盘部分朝向第一延伸部分的端部增加。

33. 发明申请

US20070163937A1 Oil strainer and method of manufacturing the same 审中-公开
标题翻译：滤油器及其制造方法
公开(公告)号：US20070163937A1
公开(公告)日：2007-07-19
申请号：US11652093
申请日：2007-01-11
申请人： Taisuke Sato
发明人： Taisuke Sato
IPC分类号： B01D35/02
CPC分类号： B01D29/014 , B01D35/02
摘要： There is provided an oil strainer in which the filtration area is large, and which can go around an obstacle between pipes etc. to be connected. An oil strainer 1 includes a housing 2 in which an open portion 6 of a case body 3 is closed by a cover body 20, a filter element 30 disposed in the housing 2, an inflow portion 15, and an outflow portion 16. The housing 2 is formed so as to extend along one axis direction in a state of providing a bend portion in an intermediate portion in one axis direction X, and the inflow portion 15 and the outflow portion 16 are arranged at both ends in one axis direction X.
摘要翻译：设有过滤面积大的滤油器，能够连接的管等之间的障碍物。滤油器1包括壳体2，壳体3的开口部分6由盖体20封闭，过滤元件30设置在壳体2中，流入部分15和流出部分16。 2形成为在一个轴方向X的中间部分设置弯曲部的状态下沿着一个轴方向延伸，并且流入部15和流出部16在一个轴方向X的两端配置。

34. 发明申请

US20130234178A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130234178A1
公开(公告)日：2013-09-12
申请号：US13601015
申请日：2012-08-31
申请人： Satoshi Mitsugi , Naoharu Sugiyama , Taisuke Sato , Shinya Nunoue
发明人： Satoshi Mitsugi , Naoharu Sugiyama , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/12 , H01L33/20
摘要： According to one embodiment, a semiconductor light emitting device includes a silicon substrate, a buffer layer, a foundation semiconductor layer, a first semiconductor layer, a light emitting unit and a second semiconductor layer. The buffer layer is provided on a part of a major surface of the silicon substrate. The foundation semiconductor layer is crystal-grown from an upper surface of the buffer layer, covers a non-formed region of the major surface where the buffer layer is not provided, and is spaced apart from the non-formed region. The first semiconductor layer is provided on the foundation semiconductor layer and has a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and has a second conductivity type.
摘要翻译：根据一个实施例，半导体发光器件包括硅衬底，缓冲层，基底半导体层，第一半导体层，发光单元和第二半导体层。缓冲层设置在硅衬底的主表面的一部分上。基底半导体层从缓冲层的上表面晶体生长，覆盖没有设置缓冲层的主表面的非形成区域，并与非形成区域间隔开。第一半导体层设置在基底半导体层上并且具有第一导电类型。发光单元设置在第一半导体层上。第二半导体层设置在发光单元上并具有第二导电类型。

35. 发明申请

US20130234106A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130234106A1
公开(公告)日：2013-09-12
申请号：US13601454
申请日：2012-08-31
申请人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
IPC分类号： H01L33/12
CPC分类号： H01L33/32 , H01L33/06 , H01L33/12
摘要： According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包含氮化物半导体晶体并且在（0001）表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在（0001）表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层，其设置在与所述第一半导体层的所述发光层相对的一侧上，并向所述第一半导体层施加压缩应力。

36. 发明授权

US08441023B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08441023B2
公开(公告)日：2013-05-14
申请号：US13226045
申请日：2011-09-06
申请人： Taisuke Sato , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
发明人： Taisuke Sato , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/46
摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.
摘要翻译：根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。在第一电介质层，第二电介质层和衬底上形成第一半导体层。第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

37. 发明申请

US20120292649A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER 有权
标题翻译：半导体发光器件，波形和制造氮化物半导体晶体层的方法
公开(公告)号：US20120292649A1
公开(公告)日：2012-11-22
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
IPC分类号： H01L33/22 , H01L29/00 , H01L21/20
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。第一半导体层具有与第一主表面相对的第一主表面和第二主表面。发光层具有设置在第二主表面上的有源层。第二半导体层设置在发光层上。低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

38. 发明授权

US08282633B2 High-frequency surgical apparatus and high-frequency surgical method for closure of patent foramen ovale 有权
标题翻译：高频手术器械和高频手术方法闭合卵圆孔
公开(公告)号：US08282633B2
公开(公告)日：2012-10-09
申请号：US12484650
申请日：2009-06-15
申请人： Taisuke Sato , Manabu Ishikawa
发明人： Taisuke Sato , Manabu Ishikawa
IPC分类号： A61B18/12
CPC分类号： A61B18/1206 , A61B18/1492 , A61B2017/003 , A61B2018/00351 , A61B2018/124
摘要： A high-frequency surgical apparatus for treating patent foramen ovale in a heart includes a flexible probe which has such a length as to allow the probe to be placed in the patent foramen ovale by passing through the blood vessel; an electrode section which, being placed at a distal end of the probe, has three or more electrodes along a longitudinal direction of the probe; a high-frequency power supply section which supplies predetermined high-frequency power to the patent foramen ovale via the electrode section; a switching section which switches among a plurality of signal lines connected to the three or more electrodes; and a high-frequency power control section which controls switching of the switching section so as to supply the high-frequency power to two electrodes.
摘要翻译：用于治疗心脏中卵孔卵泡的高频手术装置包括：具有如下长度的柔性探针，该探针通过穿过血管将探针放置在卵孔中; 放置在探针的前端的电极部沿着探针的长度方向具有3个以上的电极; 高频电源部，其经由所述电极部向所述卵孔孔提供预定的高频电力; 切换部，其切换与所述三个以上的电极连接的多条信号线; 以及高频功率控制部，其控制切换部的切换，以向两个电极提供高频电力。

39. 发明授权

US08133219B2 High frequency operation apparatus and high frequency operation method 有权
标题翻译：高频运行装置和高频运行方式
公开(公告)号：US08133219B2
公开(公告)日：2012-03-13
申请号：US12246870
申请日：2008-10-07
申请人： Taisuke Sato
发明人： Taisuke Sato
IPC分类号： A61B18/18
CPC分类号： A61B18/1445 , A61B18/1206 , A61B2017/00212 , A61B2018/00083 , A61B2018/00875
摘要： A high frequency operation apparatus includes: a treatment section provided with electrodes for performing treatment of a living tissue; a switch section connected to each of the electrodes and switching conduction of the electrodes to configure paired electrodes from the electrodes; a power supply section for supplying high frequency power to the living tissue via the paired conductive electrodes; a biological information measuring section for sequentially measuring biological information; a determining section for determining if the measured values of biological information are within a predetermined range; and a control section for performing control so that the high frequency power is supplied to the living tissue by using only the paired electrodes corresponding to the measure value determined as being within the predetermined range.
摘要翻译：高频操作装置包括：处理部，设置有用于进行生物体组织处理的电极; 连接到每个电极的开关部分，并且切换电极的导通以配置来自电极的成对电极; 电源部，其经由所述一对导电电极向所述生物体组织提供高频电力; 用于顺序地测量生物信息的生物信息测量部分; 用于确定生物信息的测量值是否在预定范围内的确定部分; 以及控制部分，用于执行控制，使得通过仅使用与被确定为在预定范围内的测量值相对应的成对电极将高频电力提供给生物体组织。

40. 发明申请

US20120043550A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120043550A1
公开(公告)日：2012-02-23
申请号：US13030264
申请日：2011-02-18
申请人： Toshihide ITO , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
发明人： Toshihide ITO , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/60 , H01L33/30 , H01L33/36
CPC分类号： H01L33/145 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer is disposed between the first electrode and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the first semiconductor layer. The second electrode has reflectivity with respect to luminescent light. The high resistance layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode and includes a portion overlapping with the first electrode. The transparent conductive layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode. The transparent conductive layer has a resistance lower than a resistance of the high resistance layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极，高电阻层和透明导电层。堆叠结构体包括第一和第二半导体层和发光层。第一半导体层设置在第一电极和第二半导体层之间。第二半导体层设置在第二电极和第一半导体层之间。第二电极具有相对于发光的反射率。高电阻层与第二半导体层与第二电极之间的第二半导体层接触并且包括与第一电极重叠的部分。透明导电层与第二半导体层在第二半导体层和第二电极之间接触。透明导电层的电阻低于高电阻层的电阻。

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