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31. 发明授权

US06364964B1 Manufacturing method of spin valve magnetoresistive effect element and manufacturing method of thin-film magnetic head with the element 有权
标题翻译：自旋阀磁阻效应元件的制造方法和薄膜磁头与元件的制造方法
公开(公告)号：US06364964B1
公开(公告)日：2002-04-02
申请号：US09655404
申请日：2000-09-05
申请人： Tetsuro Sasaki , Noriyuki Ito , Koichi Terunuma
发明人： Tetsuro Sasaki , Noriyuki Ito , Koichi Terunuma
IPC分类号： H01F1032
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , H01F10/324 , H01F10/3268 , H01F41/302 , H01L43/12 , Y10T29/49034
摘要： The SVMR element has a non-magnetic metallic thin-film layer, first and second ferromagnetic thin-film layers (free and pinned layers) formed to sandwich the non-magnetic metallic thin-film layer and an anti-ferromagnetic thin-film layer formed in contact with a surface of the second ferromagnetic thin-film layer. This surface is opposite to the non-magnetic metallic thin-film layer. The first ferromagnetic thin-film layer has a two-layers structure of a NiFe layer and a CoFe layer. The manufacturing method includes a step of depositing the first ferromagnetic thin-film layer, the non-magnetic metallic thin-film layer, the second ferromagnetic thin-film layer and the anti-ferromagnetic thin-film layer, and a step of annealing, thereafter, the deposited layers so that change in magnetostriction depending upon variation of a thickness of the NiFe layer becomes small.
摘要翻译： SVMR元件具有非磁性金属薄膜层，形成为夹着非磁性金属薄膜层的第一和第二铁磁薄膜层（自由和被钉扎层）和形成的反铁磁性薄膜层与第二铁磁性薄膜层的表面接触。该表面与非磁性金属薄膜层相反。第一铁磁性薄膜层具有NiFe层和CoFe层的两层结构。该制造方法包括沉积第一铁磁薄膜层，非磁性金属薄膜层，第二铁磁性薄膜层和反铁磁性薄膜层的步骤以及退火步骤沉积层，使得依赖于NiFe层的厚度变化的磁致伸缩变化变小。

32. 发明授权

US4263700A Method of producing a fluorescent display tube 失效
标题翻译：荧光显示管的制造方法
公开(公告)号：US4263700A
公开(公告)日：1981-04-28
申请号：US7783
申请日：1979-01-30
申请人： Minolu Fujisaki , Tetsuro Sasaki
发明人： Minolu Fujisaki , Tetsuro Sasaki
IPC分类号： H01J9/24 , H01J9/14 , H01J31/15 , H01J9/26 , H01J9/32 , H01J9/36
CPC分类号： H01J31/15 , Y10T29/49139
摘要： A fluorescent display tube includes in the casing a plurality of anode display portions formed of segment electrodes each having a fluorescent material layer thereon, cathodes and control electrodes disposed opposite to the anode display portions, lead-in wires led out in an air-tight manner from the casing and electrically connected to the segment electrodes, the control electrodes and the cathodes, a plurality of conductive section each connected to the adjacent common segment electrodes through a corresponding conductive wiring film, the lead-in wires for the segment electrode terminal each having at the end thereof in the casing a contact with a spring portion, the contact coming in contact with the corresponding conductive section by the action of the spring portion as well as a conductive adhesive applied thereto thereby establishing an electrical connection.A method of producing a fluorescent display tube includes forming an anode plate, forming electrode assembly framework, forming a casing using the anode plate, upper cover and the electrode assembly framework by sealing and removing unnecessary parts after sealing.
摘要翻译：荧光显示管在壳体中包括多个阳极显示部分，每个阳极显示部分由其上具有荧光材料层的部分电极形成，阴极和与阳极显示部分相对设置的控制电极，以气密方式引出的引入线电连接到分段电极，控制电极和阴极，多个导电部分，每个导电部分通过相应的导电布线膜连接到相邻的公共部分电极，分段电极端子的引入线各自具有在其壳体的端部与弹簧部分接触，触点通过弹簧部分的作用与相应的导电部分接触，以及施加到其上的导电粘合剂，从而建立电连接。一种荧光显示管的制造方法，其特征在于，在密封后密封除去不需要的部分，形成阳极板，形成电极组件框架，使用阳极板，上盖和电极组件框架形成壳体。

33. 发明授权

US07832085B2 Method of manufacturing magnetic head and method of manufacturing magnetic head substructure 有权
标题翻译：制造磁头的方法和制造磁头子结构的方法
公开(公告)号：US07832085B2
公开(公告)日：2010-11-16
申请号：US12005272
申请日：2007-12-27
申请人： Takeo Kagami , Tetsuro Sasaki , Yuichi Watabe , Takamitsu Sakamoto
发明人： Takeo Kagami , Tetsuro Sasaki , Yuichi Watabe , Takamitsu Sakamoto
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3166 , G11B5/1278 , G11B5/3116 , G11B5/3173 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/1107 , Y10T428/1171 , Y10T428/1193
摘要： A method of manufacturing a magnetic head includes the steps of: fabricating a substructure in which pre-head portions are aligned in a plurality of rows by forming components of a plurality of magnetic heads on a single substrate; and fabricating the plurality of magnetic heads by separating the pre-head portions from one another through cutting the substructure. In the step of fabricating the substructure, the resistance of an MR film that will be formed into an MR element by undergoing lapping later is detected to determine the target position of the boundary between a track width defining portion and a wide portion of a pole layer based on the resistance detected, and the pole layer is thereby formed. In the step of fabricating the magnetic heads, the surface formed by cutting the substructure is lapped such that the MR film is lapped and the resistance thereof thereby reaches a predetermined value.
摘要翻译：制造磁头的方法包括以下步骤：通过在单个基板上形成多个磁头的部件来制造其中预磁头部分以多行排列的子结构; 以及通过切割所述子结构将所述前头部彼此分离来制造所述多个磁头。在制造子结构的步骤中，检测将通过进行研磨而形成MR元件的MR膜的电阻，以确定轨道宽度限定部分和极层的宽部分之间的边界的目标位置基于检测到的电阻，从而形成极层。在制造磁头的步骤中，通过切割子结构而形成的表面被重叠，使得MR膜被研磨并且其电阻达到预定值。

34. 发明申请

US20080291579A1 METHOD FOR TESTING NOISE OF THIN-FILM MAGNETIC HEAD, AND MAGNETIC DISK DRIVE APPARATUS WITH NOISE TESTING FUNCTION 有权
标题翻译：用于测试薄膜磁头的噪声的方法和具有噪声测试功能的磁盘驱动装置
公开(公告)号：US20080291579A1
公开(公告)日：2008-11-27
申请号：US11753836
申请日：2007-05-25
申请人： Takumi Uesugi , Takeo Kagami , Tetsuro Sasaki , Kei Hirata , Masaru Hirose , Chi Man Lee , Kwok Piu Tso
发明人： Takumi Uesugi , Takeo Kagami , Tetsuro Sasaki , Kei Hirata , Masaru Hirose , Chi Man Lee , Kwok Piu Tso
IPC分类号： G11B5/33
CPC分类号： G11B5/455 , G11B5/3189 , G11B5/3903
摘要： A noise-testing method for a thin-film magnetic head with an MR read head element and a heating unit capable of applying a heat and a stress to the MR read head element, includes a step of applying alternately and discontinuously with each other an electrical power having a first level and an electrical power having a second level higher than the first level to the heating unit, and a step of evaluating the thin-film magnetic head by measuring a noise output or noise outputs obtained from the MR read head element when the electrical power or the electrical powers are applied to the heating unit.
摘要翻译：具有MR读取头元件的薄膜磁头和能够向MR读取头元件施加热和应力的加热单元的噪声测试方法包括以下步骤：交替地和不连续地施加电气具有第一电平的功率和具有比加热单元的第一电平高的第二电平的电力;以及通过测量从MR读取头元件获得的噪声输出或噪声输出来评估薄膜磁头的步骤，电力或电力被施加到加热单元。

35. 发明申请

US20080222879A1 Method of manufacturing magnetic head and method of manufacturing magnetic head substructure 有权
标题翻译：制造磁头的方法和制造磁头子结构的方法
公开(公告)号：US20080222879A1
公开(公告)日：2008-09-18
申请号：US12005272
申请日：2007-12-27
申请人： Takeo Kagami , Tetsuro Sasaki , Yuichi Watabe , Takamitsu Sakamoto
发明人： Takeo Kagami , Tetsuro Sasaki , Yuichi Watabe , Takamitsu Sakamoto
IPC分类号： G11B5/127
CPC分类号： G11B5/3166 , G11B5/1278 , G11B5/3116 , G11B5/3173 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/1107 , Y10T428/1171 , Y10T428/1193
摘要： A method of manufacturing a magnetic head includes the steps of: fabricating a substructure in which pre-head portions are aligned in a plurality of rows by forming components of a plurality of magnetic heads on a single substrate; and fabricating the plurality of magnetic heads by separating the pre-head portions from one another through cutting the substructure. In the step of fabricating the substructure, the resistance of an MR film that will be formed into an MR element by undergoing lapping later is detected to determine the target position of the boundary between a track width defining portion and a wide portion of a pole layer based on the resistance detected, and the pole layer is thereby formed. In the step of fabricating the magnetic heads, the surface formed by cutting the substructure is lapped such that the MR film is lapped and the resistance thereof thereby reaches a predetermined value.
摘要翻译：制造磁头的方法包括以下步骤：通过在单个基板上形成多个磁头的部件来制造其中预磁头部分以多行排列的子结构; 以及通过切割所述子结构将所述前头部彼此分离来制造所述多个磁头。在制造子结构的步骤中，检测将通过进行研磨而形成MR元件的MR膜的电阻，以确定轨道宽度限定部分和极层的宽部分之间的边界的目标位置基于检测到的电阻，从而形成极层。在制造磁头的步骤中，通过切割子结构而形成的表面被重叠，使得MR膜被研磨并且其电阻达到预定值。

36. 发明授权

US07086141B2 Manufacturing method of magnetoresistive effect sensor 失效
标题翻译：磁阻效应传感器的制造方法
公开(公告)号：US07086141B2
公开(公告)日：2006-08-08
申请号：US10175364
申请日：2002-06-20
申请人： Yoshihiro Tsuchiya , Tetsuro Sasaki
发明人： Yoshihiro Tsuchiya , Tetsuro Sasaki
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , H01F41/302 , Y10T29/49021 , Y10T29/49032 , Y10T29/49036 , Y10T29/49043 , Y10T29/49044 , Y10T29/49078
摘要： A manufacturing method of an MR sensor including a step of stacking an anti-ferromagnetic layer made of an electrically conductive anti-ferromagnetic material, a step of stacking a pinned layer on the anti-ferromagnetic layer, a step of stacking a nonmagnetic spacer layer on the pinned layer, a step of exposing at least once a surface of the nonmagnetic spacer layer to an oxygen-contained atmosphere, a step of stacking a free layer on the nonmagnetic spacer layer, a magnetization direction of the free layer being free depending upon a magnetic filed applied thereto, and a step of providing the pinned layer a magnetization direction fixed by an exchange coupling between the anti-ferromagnetic layer and the pinned layer.
摘要翻译：一种MR传感器的制造方法，包括堆叠由导电性反铁磁性材料构成的反铁磁性层的步骤，在抗铁磁性层上堆叠被钉扎层的步骤，将非磁性间隔层层叠在一起的步骤被钉扎层，将非磁性间隔层的表面的至少一次暴露于含氧气氛的步骤，在非磁性间隔层上层叠自由层的步骤，取决于自由层的自由层的磁化方向为施加到其上的磁场，以及通过在反铁磁层和被钉扎层之间的交换耦合来固定被钉扎层的磁化方向的步骤。

37. 发明授权

US06636398B2 Magnetoresistive effect sensor, thin-film magnetic head with the sensor, manufacturing method of magnetoresistive sensor and manufacturing method of thin-film magnetic head 有权
公开(公告)号：US06636398B2
公开(公告)日：2003-10-21
申请号：US09867424
申请日：2001-05-31
申请人： Tetsuro Sasaki , Koichi Terunuma , Kosuke Tanaka
发明人： Tetsuro Sasaki , Koichi Terunuma , Kosuke Tanaka
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996
摘要： A MR sensor includes at least one pinned layer, at least one nonmagnetic layer, and a free layer layered with the at least one pinned layer via the at least one nonmagnetic layer. A magnetization direction of the at least one pinned layer is fixed, and a magnetization direction of the free layer is variable depending upon a magnetic field applied to the free layer. A nonmagnetic metal is diffused in at least part of the free layer.

38. 发明授权

US06462917B2 Magnetoresistive sensor, a thin film magnetic head, a magnetic head device, and a magnetic disk drive device 有权
标题翻译：磁阻传感器，薄膜磁头，磁头装置和磁盘驱动装置
公开(公告)号：US06462917B2
公开(公告)日：2002-10-08
申请号：US09772930
申请日：2001-01-31
申请人： Koichi Terunuma , Tetsuro Sasaki , Kosuke Tanaka , Takumi Uesugi
发明人： Koichi Terunuma , Tetsuro Sasaki , Kosuke Tanaka , Takumi Uesugi
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/1278 , G11B5/3903 , G11B5/3967 , G11B5/4806 , G11B5/59683 , G11B2005/0029 , G11B2005/3996 , Y10T428/11 , Y10T428/1193
摘要： A magnetoresistive sensor according to the present invention has a spin-valve film structure which includes an underfilm, a first ferromagnetic film, a conductive film, a second ferromagnetic film, an antiferromagnetic film and a protective film. One surface of the first ferromagnetic film is adjacent to the one surface of the underfilm, and the one surface of the conductive film is adjacent to the other surface of the first ferromagnetic film. One surface of the second ferromagnetic film is adjacent to the other surface of the conductive film. One surface of the antiferromagnetic film adjacent to the other surface of the second ferromagnetic film, and thus, the antiferromagnetic film is bonded to the second ferromagnetic film with exchange interaction. One surface of the protective film is adjacent to the other surface of the antiferromagnetic film. The underfilm has a face centered cubic crystal structure, and is oriented in the (111) plane direction. Then, the distance between the adjacent (111) planes of the spin-valve film structure except the antiferromagnetic film is within 0.2050-0.2064 nm.
摘要翻译：根据本发明的磁阻传感器具有包括底膜，第一铁磁膜，导电膜，第二铁磁膜，反铁磁膜和保护膜的自旋阀膜结构。第一铁磁膜的一个表面与底膜的一个表面相邻，并且导电膜的一个表面与第一铁磁膜的另一个表面相邻。第二铁磁膜的一个表面与导电膜的另一个表面相邻。与第二铁磁膜的另一个表面相邻的反铁磁膜的一个表面，因此，反铁磁膜以交换相互作用结合到第二铁磁膜。保护膜的一个表面与反铁磁膜的另一个表面相邻。底膜具有面心立方晶体结构，并且在（111）面方向取向。然后，除了反铁磁膜之外的自旋阀膜结构的相邻（111）面之间的距离在0.2050-0.2064nm内。

39. 发明申请

US20080218915A1 Tunnel Magnetoresistive Effect Element With Lower Noise and Thin-Film Magnet Head Having the Element 审中-公开
标题翻译：隧道磁阻效应元件与低噪声和薄膜磁头头元素
公开(公告)号：US20080218915A1
公开(公告)日：2008-09-11
申请号：US11681937
申请日：2007-03-05
申请人： Takumi Uesugi , Satoshi Miura , Tetsuro Sasaki , Takeo Kagami , Kei Hirata
发明人： Takumi Uesugi , Satoshi Miura , Tetsuro Sasaki , Takeo Kagami , Kei Hirata
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906
摘要： Provided is a TMR effect element having no special structures needing much man-hour cost for the formation, in which the high temperature noise and the low temperature noise are suppressed and a sufficiently high resistance-change ratio is provided. The TMR effect element comprises: a tunnel barrier layer formed by oxidizing a base film; and two ferromagnetic layers stacked so as to sandwich the tunnel barrier layer, the base film having a film thickness larger than a film thickness at which a resistance-change ratio of the TMR effect element indicates a maximum value. Here, in the case that the base film is an aluminum film, the film thickness of the aluminum film is preferably in the range of 0.50 nm to 1.5 nm.
摘要翻译：本发明提供一种TMR效应元件，其特征在于，在抑制高温噪声和低温噪声以及提供足够高的电阻变化率的情况下，不需要大量的人工成本。 TMR效应元件包括：通过氧化基膜形成的隧道势垒层; 以及层叠所述隧道势垒层的两个铁磁层，所述基膜的膜厚度大于所述TMR效应元件的电阻变化率为最大值的膜厚度。这里，在基膜是铝膜的情况下，铝膜的膜厚优选在0.50nm〜1.5nm的范围内。

40. 发明申请

US20080218912A1 CPP-type magnetoresistive element having spacer layer that includes semiconductor layer 审中-公开
标题翻译： CPP型磁阻元件具有包括半导体层的间隔层
公开(公告)号：US20080218912A1
公开(公告)日：2008-09-11
申请号：US11715984
申请日：2007-03-09
申请人： Kei Hirata , Satoshi Miura , Takeo Kagami , Tetsuro Sasaki
发明人： Kei Hirata , Satoshi Miura , Takeo Kagami , Tetsuro Sasaki
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： An MR element includes: a free layer whose direction of magnetization changes in response to a signal magnetic field; a pinned layer whose direction of magnetization is fixed; and a spacer layer disposed between these layers. The spacer layer includes: a semiconductor layer made of an n-type semiconductor; and a Schottky barrier forming layer made of a metal material having a work function higher than that of the n-type semiconductor that the semiconductor layer is made of, the Schottky barrier forming layer being disposed in at least one of a position between the semiconductor layer and the free layer and a position between the semiconductor layer and the pinned layer, touching the semiconductor layer and forming a Schottky barrier at an interface between the semiconductor layer and itself The semiconductor layer is 1.1 to 1.7 nm in thickness, and the Schottky barrier forming layer is 0.1 to 0.3 nm in thickness.
摘要翻译： MR元件包括：其磁化方向响应于信号磁场而变化的自由层; 固定磁化方向的钉扎层; 以及设置在这些层之间的间隔层。间隔层包括：由n型半导体制成的半导体层; 以及肖特基势垒形成层，其由具有比半导体层形成的n型半导体的功函数高的金属材料制成，所述肖特基势垒形成层设置在所述半导体层之间的位置中的至少一个自由层和半导体层与被钉扎层之间的位置，与半导体层接触并在半导体层与其自身之间的界面处形成肖特基势垒。半导体层的厚度为1.1〜1.7nm，形成肖特基势垒层的厚度为0.1〜0.3nm。

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