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31. 发明申请

US20110140101A1 Light Emitting Device 有权
标题翻译：发光装置
公开(公告)号：US20110140101A1
公开(公告)日：2011-06-16
申请号：US12966157
申请日：2010-12-13
申请人： Takeshi Noda
发明人： Takeshi Noda
IPC分类号： H01L33/28
CPC分类号： H01L33/26 , H01L51/5048 , H01L51/5203 , H01L51/5209 , H05B33/24
摘要： It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element.
摘要翻译：本发明的目的是提供一种发光装置，其中即使当具有诸如铝的高反射率的材料用于电极时，可以在电极上形成包含氧的层，而不增加接触电阻，并且其制造方法。根据本发明，其特征在于，具有由具有高反射率的导电膜如铝，银以及包含铝的合金或含有银的合金的叠层结构的电极和导电性的发光元件在导电膜上设置由难熔金属材料构成的膜，或者具有发光元件的发光装置。

32. 发明授权

US07897979B2 Light emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07897979B2
公开(公告)日：2011-03-01
申请号：US10454124
申请日：2003-06-04
申请人： Shunpei Yamazaki , Takeshi Noda , Yoshinari Higaki
发明人： Shunpei Yamazaki , Takeshi Noda , Yoshinari Higaki
IPC分类号： H01L29/04
CPC分类号： H01L51/56 , H01L27/3244 , H01L27/3246 , H01L51/5203 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/5271 , H01L51/5284 , H01L2251/56
摘要： A light emission device manufactured by a method of forming a curved surface having a radius of curvature to the upper end of an insulator 19, exposing a portion of the first electrode 18c to form an inclined surface in accordance with the curved surface, and applying etching so as to expose the first electrode 18b in a region to form a light emission region, in which emitted light from the layer containing the organic compound 20 is reflected on the inclined surface of the first electrode 18c to increase the total take-out amount of light in the direction of an arrow shown in FIG. 1A and, further, forming a light absorbing multi-layered film 24 comprising light absorbing multi-layered film on the first electrode 18c other than the region to form the light emission region, thereby obtaining a light emission device of a structure increasing the amount of light emission taken out in one direction in a light emission element, while not all the light formed in the layer containing the organic compound are taken out from the cathode as a transparent electrode toward TFT but the light was emitted also, for example, in the lateral direction (direction parallel with the plane of the substrate).
摘要翻译：一种发光装置，其是通过在绝缘体19的上端形成具有曲率半径的曲面的方法制造的，使第一电极18c的一部分根据弯曲表面形成倾斜面，并施加蚀刻以便将第一电极18b暴露在区域中以形成发光区域，其中来自含有有机化合物20的层的发射光在第一电极18c的倾斜表面上被反射，以增加第一电极18b的总取出量在图1所示的箭头方向上的光。此外，在除了该区域之外的第一电极18c上形成包含吸光多层膜的吸光多层膜24以形成发光区域，从而获得结构增加的结构的发光装置在发光元件中沿一个方向取出的发光，而不是所有在含有有机化合物的层中形成的光都从作为TFT的透明电极的阴极中取出，但是也例如在横向（与基板的平面平行的方向）。

33. 发明授权

US07671370B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07671370B2
公开(公告)日：2010-03-02
申请号：US11898997
申请日：2007-09-18
申请人： Hidekazu Miyake , Toshihiko Itoga , Eiji Oue , Takeshi Noda
发明人： Hidekazu Miyake , Toshihiko Itoga , Eiji Oue , Takeshi Noda
IPC分类号： H01L27/14
CPC分类号： H01L21/268 , H01L21/02532 , H01L21/02675 , H01L27/1222 , H01L27/1229 , H01L27/1233 , H01L27/1237 , H01L27/1251 , H01L27/1285 , H01L29/04 , H01L29/0657 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.
摘要翻译：实现了SELAX-TFT的特性的改善和ELA结晶的生产率。当使用微单晶半导体的薄膜晶体管和使用颗粒状多晶硅半导体的薄膜晶体管形成在单个基板上时，在伪单晶半导体部分中结晶之前的非晶半导体膜的膜厚度大于多晶硅半导体部分。

34. 发明授权

US07619251B2 Laser crystallization method suppressing propagation of cracks forming a display device 有权
标题翻译：抑制形成显示装置的裂纹扩散的激光结晶化方法
公开(公告)号：US07619251B2
公开(公告)日：2009-11-17
申请号：US11440180
申请日：2006-05-25
申请人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
发明人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
IPC分类号： H01L29/04 , H01L31/036 , H01L21/84 , H01L21/36
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L29/78603
摘要： A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si as a chief component is provided with a pixel region, a gate line driving circuit region and a signal line driving circuit region for driving pixels, and a terminal region where connection terminals will be formed. The region not irradiated with the CW laser beam is provided in a peripheral portion of each semiconductor device corresponding to the position where the glass substrate will be cut. Due to this means, it is possible to suppress occurrence of a failure caused by propagation of cracks when the substrate is cut.
摘要翻译：用CW或者伪CW激光束在基片上照射半导体膜的至少一部分以横向生长晶体的方法。具有Si作为主要成分的半导体膜上的区域设置有用于驱动像素的像素区域，栅极线驱动电路区域和信号线驱动电路区域以及将形成连接端子的端子区域。没有照射CW激光束的区域设置在对应于玻璃基板被切割的位置的每个半导体器件的周边部分中。由于这种方式，可以抑制当切割基板时由于裂纹的传播引起的故障的发生。

35. 发明授权

US07145210B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07145210B2
公开(公告)日：2006-12-05
申请号：US10941965
申请日：2004-09-16
申请人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
发明人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.
摘要翻译：提供了可以提高在使用GOLD结构的情况下氢化处理的效果的半导体器件及其制造方法。在半导体层上形成栅极绝缘膜，在半导体层中形成源极区，漏极区，LDD区。在栅极绝缘膜上形成主栅极。在主栅极和栅极绝缘膜上形成子栅极，以覆盖主栅极的一部分和与源极区域或漏极区域相邻的LDD区域。在子栅极，主栅极和栅极绝缘膜上形成含有氢的层间绝缘膜。随后，进行用于氢化的热处理，以氢终止半导体层的晶体缺陷。

36. 发明申请

US20060270130A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060270130A1
公开(公告)日：2006-11-30
申请号：US11440180
申请日：2006-05-25
申请人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
发明人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
IPC分类号： H01L21/84 , H01L29/76
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L29/78603
摘要： Regions serving as semiconductor devices on a substrate GLS are separated by a substrate cutting position CUT. Each region is provided with a pixel region PXD, a gate line driving circuit region GCR and a signal line driving circuit region DCR for driving pixels, and a terminal region ELD where connection terminals will be formed. TFTs using a polycrystalline Si film not irradiated with a CW laser beam is formed in the pixel region PXD and the gate line driving circuit region GCR. A region CWD irradiated with the CW laser beam is formed in a part of the signal line driving circuit region DCR, and TFTs using a polycrystalline Si film made of crystals grown laterally are formed. A region UCW not irradiated with the CW laser beam is provided in the substrate cutting position CUT. The substrate GLS excluding the vicinities of the substrate cutting position CUT is irradiated with the CW laser beam. Tensile stress of the substrate surface near the substrate cutting position CUT is lower than tensile stress of the substrate surface in the region CWD so that cracks caused by substrate cutting is suppressed. Thus, it is possible to prevent cracks from occurring at the time of cutting a glass substrate having a semiconductor film crystallized by a CW laser beam.
摘要翻译：在衬底GLS上用作半导体器件的区域被衬底切割位置CUT隔开。每个区域设置有像素区域PXD，栅极线驱动电路区域GCR和用于驱动像素的信号线驱动电路区域DCR以及将形成连接端子的端子区域ELD。在像素区域PXD和栅极线驱动电路区域GCR中形成使用未被CW激光束照射的多晶Si膜的TFT。在信号线驱动电路区域DCR的一部分中形成用CW激光束照射的区域CWD，并且形成使用由横向生长的晶体制成的多晶Si膜的TFT。在基板切断位置CUT中设置没有用CW激光束照射的区域UCW。用CW激光束照射除基板切断位置CUT附近的基板GLS。衬底切割位置CUT附近的衬底表面的拉伸应力低于区域CWD中的衬底表面的拉伸应力，从而抑制由衬底切割引起的裂纹。因此，可以防止在切割具有通过CW激光束结晶的半导体膜的玻璃基板时发生裂纹。

37. 发明申请

US20060186804A1 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US20060186804A1
公开(公告)日：2006-08-24
申请号：US11352185
申请日：2006-02-10
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

38. 发明申请

US20060001051A1 Thin film semiconductor circuit, manufacturing method thereof, and image display apparatus utilizing the same thin film semiconductor circuit 审中-公开
标题翻译：薄膜半导体电路及其制造方法以及利用该薄膜半导体电路的图像显示装置
公开(公告)号：US20060001051A1
公开(公告)日：2006-01-05
申请号：US11171219
申请日：2005-07-01
申请人： Mitsuharu Tai , Mutsuko Hatano , Yoichi Takahara , Hiroki Takahashi , Akio Yazaki , Takeshi Noda
发明人： Mitsuharu Tai , Mutsuko Hatano , Yoichi Takahara , Hiroki Takahashi , Akio Yazaki , Takeshi Noda
IPC分类号： H01L29/745 , H01L21/335
CPC分类号： H01L29/78603 , H01L27/12 , H01L27/1285 , H01L27/3244 , H01L29/04 , H01L29/78675
摘要： Agglomeration of a polycrystalline silicon film is eliminated at the time of obtaining a high quality polycrystalline silicon film by forming a silicon layer on an insulating film substrate and conducting long-term melting and re-crystallization. For this purpose, a layer or a plurality of layers of an underlayer UCL are provided on an insulating substrate GLS, the area near the surface in contact with a precursory silicon film PCF provided on this underlayer UCL is formed as an insulating film UCLP showing a film composition to improve the wettability of the melted silicon layer, and thereafter a high quality polycrystalline silicon film PSI is formed through elimination of agglomeration by melting of the precursory silicon film PCF using a laser beam LSR.
摘要翻译：通过在绝缘膜基板上形成硅层并进行长期熔化和再结晶，在获得高质量的多晶硅膜时消除了多晶硅膜的聚集。为此，在绝缘基板GLS上设置一层或多层下层UCL，在与该底层UCL上设置的前体硅膜PCF接触的表面附近的区域形成为绝缘膜UCLP，膜组合物以提高熔融硅层的润湿性，然后通过使用激光束LSR熔化前体硅膜PCF消除聚集而形成高质量的多晶硅膜PSI。

39. 发明申请

US20050169330A1 Laser annealing apparatus and annealing method of semiconductor thin film 审中-公开
标题翻译：半导体薄膜的激光退火装置和退火方法
公开(公告)号：US20050169330A1
公开(公告)日：2005-08-04
申请号：US10987003
申请日：2004-11-15
申请人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano , Takeshi Noda , Yukio Takasaki
发明人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L21/324 , B23K26/073 , C30B13/24 , C30B29/06 , H01L21/20 , H01L21/268 , H01L29/04 , H01L29/786 , H01S3/00 , H01L21/00 , H01L21/84 , H01L21/76 , C30B1/00 , H01L21/36
CPC分类号： H01L21/02691 , B23K26/0738 , C30B13/24 , C30B29/06 , H01L21/02678 , H01L21/02683 , H01L21/2026 , H01L29/04 , H01L29/78675
摘要： When a laser bean temporally modulated in amplitude by a modulator is shaped into a long and narrow beam by a beam shaper, the scanning-direction size of the long and narrow beam shaped by the beam shaper is selected to be in a range of from 2 to 10 microns, preferably in a range of from 2 to 4 microns and the scanning speed of the beam is selected to be in a range of from 300 to 1000 mm/s, preferably in a range of from 500 to 1000 m/s. As a result, damage of the silicon thin film can be suppressed while energy utilizing efficiency of the laser beam can be improved. Accordingly, laterally grown crystals (belt-like crystals) improved in throughput can be obtained on a required region of a substrate scanned and irradiated with the laser beam.
摘要翻译：当通过调制器在振幅时间上调制的激光束通过光束整形器成形为长而窄的光束时，由光束整形器成形的长而窄的光束的扫描方向尺寸被选择在2 至10微米，优选在2至4微米的范围内，并且光束的扫描速度选择在300至1000mm / s的范围内，优选在500至1000m / s的范围内。结果，可以抑制硅薄膜的损伤，同时提高激光束的能量利用效率。因此，可以在扫描并照射激光束的基板的所需区域上获得提高生产量的横向生长的晶体（带状晶体）。

40. 发明申请

US20050062044A1 Semiconductor device, method of manufacturing the same, and electronic device having the same 失效
标题翻译：半导体装置及其制造方法以及具有该半导体装置的电子装置
公开(公告)号：US20050062044A1
公开(公告)日：2005-03-24
申请号：US10941965
申请日：2004-09-16
申请人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
发明人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
IPC分类号： H01L21/336 , H01L29/423 , H01L29/786 , H01L29/76
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.
摘要翻译：提供了可以提高在使用GOLD结构的情况下氢化处理的效果的半导体器件及其制造方法。在半导体层上形成栅极绝缘膜，在半导体层中形成源极区，漏极区，LDD区。在栅极绝缘膜上形成主栅极。在主栅极和栅极绝缘膜上形成子栅极，以覆盖主栅极的一部分和与源极区域或漏极区域相邻的LDD区域。在子栅极，主栅极和栅极绝缘膜上形成含有氢的层间绝缘膜。随后，进行用于氢化的热处理，以氢终止半导体层的晶体缺陷。

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