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1. 发明授权

US08558453B2 Active matrix display device 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US08558453B2
公开(公告)日：2013-10-15
申请号：US12331679
申请日：2008-12-10
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L51/52
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译：将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。此外，金属电极被部分蚀刻并用作发光元件的第一电极。缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

2. 发明申请

US20060186804A1 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US20060186804A1
公开(公告)日：2006-08-24
申请号：US11352185
申请日：2006-02-10
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

3. 发明申请

US20110207255A1 Semiconductor Device and Method for Manufacturing the Same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110207255A1
公开(公告)日：2011-08-25
申请号：US13099804
申请日：2011-05-03
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L33/02
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译：将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。此外，金属电极被部分蚀刻并用作发光元件的第一电极。缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

4. 发明申请

US20090134399A1 Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090134399A1
公开(公告)日：2009-05-28
申请号：US12331679
申请日：2008-12-10
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L33/00 , H01J1/62
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译：将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。此外，金属电极被部分蚀刻并用作发光元件的第一电极。缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

5. 发明授权

US09093402B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09093402B2
公开(公告)日：2015-07-28
申请号：US13099804
申请日：2011-05-03
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L51/00 , H01L27/32 , H01L51/50 , H01L51/52 , H01L51/56
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译：将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。此外，金属电极被部分蚀刻并用作发光元件的第一电极。缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

6. 发明授权

US07948171B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07948171B2
公开(公告)日：2011-05-24
申请号：US11352185
申请日：2006-02-10
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L51/50 , H01L51/52
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译：将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。此外，金属电极被部分蚀刻并用作发光元件的第一电极。缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

7. 发明授权

US08633473B2 High contrast light emitting device and method for manufacturing the same 有权
标题翻译：高对比度发光装置及其制造方法
公开(公告)号：US08633473B2
公开(公告)日：2014-01-21
申请号：US11318783
申请日：2005-12-27
申请人： Takeshi Noda , Masayuki Sakakura , Yasuyuki Arai , Yuko Tachimura
发明人： Takeshi Noda , Masayuki Sakakura , Yasuyuki Arai , Yuko Tachimura
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L33/58 , H01L27/322 , H01L27/3244 , H01L33/44 , H01L33/60 , H01L51/5281 , H01L2251/558
摘要： It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter.A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.
摘要翻译：本发明的目的是提供一种不使用偏光板的高对比度发光装置。特别地，本发明的目的是为具有滤色器的发光装置对对比度控制更简单。根据本发明的发光器件具有的特征在于具有减少来自反射电极的稍后发光的光的反射的结构，并且还具有通过滤色器吸收除了光之外的波长的特征以增强对比度。因此，可以仅考虑来自发光层的发光成分来进行对比度控制，从而变得更简单。

8. 发明申请

US20060163597A1 Light emitting device and method for manufacturing the same 有权
公开(公告)号：US20060163597A1
公开(公告)日：2006-07-27
申请号：US11318783
申请日：2005-12-27
申请人： Takeshi Noda , Masayuki Sakakura , Yasuyuki Arai , Yuko Tachimura
发明人： Takeshi Noda , Masayuki Sakakura , Yasuyuki Arai , Yuko Tachimura
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/58 , H01L27/322 , H01L27/3244 , H01L33/44 , H01L33/60 , H01L51/5281 , H01L2251/558
摘要： It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter. A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.

9. 发明授权

US08704243B2 Light emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08704243B2
公开(公告)日：2014-04-22
申请号：US13672861
申请日：2012-11-09
申请人： Shunpei Yamazaki , Takeshi Noda
发明人： Shunpei Yamazaki , Takeshi Noda , Yoshinari Higaki
IPC分类号： H01L27/15
CPC分类号： H01L51/56 , H01L27/3244 , H01L27/3246 , H01L51/5203 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/5271 , H01L51/5284 , H01L2251/56
摘要： Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing, an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.
摘要翻译：公开了一种发光元件，在具有绝缘表面的基板上，包括与薄膜晶体管连接的第一电极和覆盖第一电极的端部的绝缘体，包含与第一电极接触的有机化合物的层，第二电极与含有机化合物的层接触。第一电极具有倾斜表面，并且倾斜表面反射来自含有机化合物的层的发射光。此外，吸收外部光的吸光多层膜设置在被绝缘体覆盖的第一电极的部分上。所述吸光性多层膜至少具有包含透光膜，膜部分吸收光和透光膜的三层结构。

10. 发明授权

US07897979B2 Light emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07897979B2
公开(公告)日：2011-03-01
申请号：US10454124
申请日：2003-06-04
申请人： Shunpei Yamazaki , Takeshi Noda , Yoshinari Higaki
发明人： Shunpei Yamazaki , Takeshi Noda , Yoshinari Higaki
IPC分类号： H01L29/04
CPC分类号： H01L51/56 , H01L27/3244 , H01L27/3246 , H01L51/5203 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/5271 , H01L51/5284 , H01L2251/56
摘要： A light emission device manufactured by a method of forming a curved surface having a radius of curvature to the upper end of an insulator 19, exposing a portion of the first electrode 18c to form an inclined surface in accordance with the curved surface, and applying etching so as to expose the first electrode 18b in a region to form a light emission region, in which emitted light from the layer containing the organic compound 20 is reflected on the inclined surface of the first electrode 18c to increase the total take-out amount of light in the direction of an arrow shown in FIG. 1A and, further, forming a light absorbing multi-layered film 24 comprising light absorbing multi-layered film on the first electrode 18c other than the region to form the light emission region, thereby obtaining a light emission device of a structure increasing the amount of light emission taken out in one direction in a light emission element, while not all the light formed in the layer containing the organic compound are taken out from the cathode as a transparent electrode toward TFT but the light was emitted also, for example, in the lateral direction (direction parallel with the plane of the substrate).
摘要翻译：一种发光装置，其是通过在绝缘体19的上端形成具有曲率半径的曲面的方法制造的，使第一电极18c的一部分根据弯曲表面形成倾斜面，并施加蚀刻以便将第一电极18b暴露在区域中以形成发光区域，其中来自含有有机化合物20的层的发射光在第一电极18c的倾斜表面上被反射，以增加第一电极18b的总取出量在图1所示的箭头方向上的光。此外，在除了该区域之外的第一电极18c上形成包含吸光多层膜的吸光多层膜24以形成发光区域，从而获得结构增加的结构的发光装置在发光元件中沿一个方向取出的发光，而不是所有在含有有机化合物的层中形成的光都从作为TFT的透明电极的阴极中取出，但是也例如在横向（与基板的平面平行的方向）。

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