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31. 发明申请

US20090304416A1 IMAGE FORMING APPARATUS 有权
标题翻译：图像形成装置
公开(公告)号：US20090304416A1
公开(公告)日：2009-12-10
申请号：US12477172
申请日：2009-06-03
申请人： Takayuki Ito , Shoichi Yoshikawa , Fuminori Moro , Noboru Oomoto
发明人： Takayuki Ito , Shoichi Yoshikawa , Fuminori Moro , Noboru Oomoto
IPC分类号： G03G15/01
CPC分类号： G03G15/0131 , G03G15/0121 , G03G15/0163 , G03G15/0173 , G03G2215/0103 , G03G2215/0138 , G03G2215/0148
摘要： An image forming apparatus includes a plurality of image carrier rollers placed on an inner circumferential side of an annular conveying path so as to face the annular conveying path and so as to be juxtaposed in a sheet conveying direction along the annular conveying path. Opposed rollers are provided on the outer circumferential side of the annular conveying path. The respective image carrier rollers and the opposed rollers which are in pressure contact therewith constitute pairs of transfer rollers, respectively. Imaging sections for forming intrinsic color images on surfaces of the respective image carrier rollers are provided. A sheet is introduced to the annular conveying path and is conveyed along the sheet conveying direction sequentially through nip sections of the pairs of transfer rollers, while the images formed on the surfaces of the respective image carrier rollers by the imaging sections are transferred one by one onto the sheet. The sheet with the images transferred thereon is released from the annular conveying path.
摘要翻译：图像形成装置包括：多个图像承载辊，其设置在环形输送路径的内周侧，以便与环形输送路径相对并沿着环形输送路径沿片材输送方向并置。相对的辊设置在环形输送路径的外周侧。与其压接的各个图像承载辊和相对的辊分别构成成对的转印辊。提供了用于在各个图像承载辊的表面上形成固有彩色图像的成像部分。将片材引入到环形输送路径中并沿着片材输送方向顺序地通过成对的转印辊的夹持部分传送，同时通过成像部分形成在各个图像承载辊的表面上的图像被一个接一个地转印到纸上具有转印在其上的图像的纸从环形输送路径释放。

32. 发明申请

US20090143623A1 Production Process of Cyanoethyl Ether 审中-公开
标题翻译：氰乙醚的生产工艺
公开(公告)号：US20090143623A1
公开(公告)日：2009-06-04
申请号：US12276524
申请日：2008-11-24
申请人： Taiji Katsumata , Takayuki Ito , Masayuki Harada
发明人： Taiji Katsumata , Takayuki Ito , Masayuki Harada
IPC分类号： C07C43/04
CPC分类号： C07C255/13 , C07C255/30 , C07C2601/14 , C07C2602/28
摘要： Provided is a production process of a cyanoethyl ether by reacting an alcohol and acrylonitrile in a two-phase system of a non-ether solvent/an aqueous alkali solution.
摘要翻译：本发明提供了在非醚溶剂/碱水溶液的两相体系中使醇与丙烯腈反应的氰乙醚的制造方法。

33. 发明申请

US20090138728A1 Program update method and server 有权
公开(公告)号：US20090138728A1
公开(公告)日：2009-05-28
申请号：US12081889
申请日：2008-04-23
申请人： Makoto Fujiwara , Yusuke Nemoto , Junichi Yasui , Takuji Maeda , Takayuki Ito , Yasushi Yamada , Shinji Inoue
发明人： Makoto Fujiwara , Yusuke Nemoto , Junichi Yasui , Takuji Maeda , Takayuki Ito , Yasushi Yamada , Shinji Inoue
IPC分类号： G06F12/14
CPC分类号： G06F21/123 , G06F21/572 , G06F21/72
摘要： A system including a secure LSI 1 establishes a communication path to/from a server 3 (UD1), and receives a common key-encrypted program generated by encryption with a common key and transmitted from the server 3 (UD6 and UD7). The received common key-encrypted program is decrypted to generate a raw program, and the raw program is re-encrypted with an inherent key to newly generate an inherent key-encrypted program, which is stored in an external memory.

34. 发明申请

US20080268660A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080268660A1
公开(公告)日：2008-10-30
申请号：US12108589
申请日：2008-04-24
申请人： Takaharu Itani , Kenichi Yoshino , Takayuki Ito , Takashi Kawakami , Tetsuya Kugimiya
发明人： Takaharu Itani , Kenichi Yoshino , Takayuki Ito , Takashi Kawakami , Tetsuya Kugimiya
IPC分类号： H01L21/02 , H01L21/00
CPC分类号： H01L21/02087 , H01L21/26513 , H01L21/2686 , H01L21/67115 , H01L29/66575
摘要： A method of manufacturing a semiconductor device that involves a heat treatment of a semiconductor substrate, has removing a superficial layer from an upper surface of an edge part of said semiconductor substrate, a bevel surface of the edge part of said semiconductor substrate and a side surface of the edge part of said semiconductor substrate; and conducting the heat treatment of said semiconductor substrate by irradiating said semiconductor substrate with light having a pulse width of 0.1 milliseconds to 100 milliseconds from a light source after said superficial layer is removed.
摘要翻译：制造涉及半导体衬底的热处理的半导体器件的方法，从所述半导体衬底的边缘部分的上表面，所述半导体衬底的边缘部分的斜面以及侧表面的所述半导体衬底的边缘部分; 以及在去除所述表面层之后，从光源照射具有0.1毫秒至100毫微秒的脉冲宽度的光，从而对所述半导体衬底进行热处理。

35. 发明授权

US07253972B2 Telephoto lens system 有权
标题翻译：长焦镜头系统
公开(公告)号：US07253972B2
公开(公告)日：2007-08-07
申请号：US11208525
申请日：2005-08-23
申请人： Junichi Fujisaki , Takayuki Ito
发明人： Junichi Fujisaki , Takayuki Ito
IPC分类号： G02B13/02
CPC分类号： G02B13/02
摘要： A telephoto lens system of a four-lens-group arrangement includes a negative first lens group, a positive or negative second lens group, a negative third lens group and a positive fourth lens group. The telephoto lens system of the four-lens-group arrangement is constituted by less than six lens elements in total. The positive or negative second lens group is constituted by a positive lens element and a negative lens element which are cemented to each other, in this order from the object. The positive lens element has a convex surface with a larger curvature facing toward the object. The positive or negative second lens group satisfies the following condition: 0.8
摘要翻译：四透镜组布置的长焦透镜系统包括负第一透镜组，正或负第二透镜组，负第三透镜组和正第四透镜组。四透镜组布置的长焦透镜系统总共由少于六个透镜元件构成。正或负第二透镜组由从物体的顺序彼此粘合的正透镜元件和负透镜元件构成。正透镜元件具有面向物体的较大曲率的凸面。正或负第二透镜组满足以下条件：<？in-line-formula description =“In-line formula”end =“lead”？> 0.8

36. 发明授权

US07209300B2 Wide-angle lens system 有权
标题翻译：广角镜头系统
公开(公告)号：US07209300B2
公开(公告)日：2007-04-24
申请号：US11302163
申请日：2005-12-14
申请人： Sachiko Ryu , Takayuki Ito
发明人： Sachiko Ryu , Takayuki Ito
IPC分类号： G02B13/04 , G02B9/04
CPC分类号： G02B13/04
摘要： A wide-angle lens system includes a positive front lens group, a diaphragm, and a positive rear lens group. The front lens group includes a negative first-sub-lens group and a positive second-sub-lens group.The negative first-sub-lens group includes a negative lens element, a positive lens element, and a negative lens element.The front lens group satisfies the following conditions: 0.5
摘要翻译：广角镜头系统包括正前透镜组，光圈和正后透镜组。前透镜组包括负的第一子透镜组和正的第二子透镜组。负的第一子透镜组包括负透镜元件，正透镜元件和负透镜元件。前透镜组满足以下条件：<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <0.75 ）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <| f < ＆lt;＆lt;＆lt;＆lt;＆lt;＆gt;＆lt; 1b＆lt; 1＆lt; 1.0（2）＆lt;？in-line-formula description =“In-line Formulas”end =“tail” -formulae description =“In-line Formulas”end =“lead”？> 0.35 <0.6（3）<？in-line-formula description =“In-line Formulas” end =“tail”？>其中f：整个透镜系统的焦距; f 1a：负第一子透镜组的焦距; f1b1：正二次透镜组的焦距; f 1比特：正二次透镜组的最大像侧表面的焦距; 1×1bi ：正二次透镜组的最大像侧表面的曲率半径; 和N 1比特：正二次透镜组的最大像侧透镜元件的折射率。

37. 发明申请

US20060126192A1 Wide-angle lens system 有权
标题翻译：广角镜头系统
公开(公告)号：US20060126192A1
公开(公告)日：2006-06-15
申请号：US11302163
申请日：2005-12-14
申请人： Sachiko Ryu , Takayuki Ito
发明人： Sachiko Ryu , Takayuki Ito
IPC分类号： G02B13/04
CPC分类号： G02B13/04
摘要： A wide-angle lens system includes a positive front lens group, a diaphragm, and a positive rear lens group. The front lens group includes a negative first-sub-lens group and a positive second-sub-lens group. The negative first-sub-lens group includes a negative lens element, a positive lens element, and a negative lens element. The front lens group satisfies the following conditions: 0.5
摘要翻译：广角镜头系统包括正前透镜组，光圈和正后透镜组。前透镜组包括负的第一子透镜组和正的第二子透镜组。负的第一子透镜组包括负透镜元件，正透镜元件和负透镜元件。前透镜组满足以下条件：<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <0.75。。。（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 1＆lt; 1a＆gt; / f＆lt; 1b＆lt; 1.0。。。（2）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.35 1bi<0.6。。。（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中f：整个透镜系统的焦距; f 1a：负第一子透镜组的焦距; f1b1：正二次透镜组的焦距; f 1比特：正二次透镜组的最大像侧表面的焦距; 1×1bi ：正二次透镜组的最大像侧表面的曲率半径; 和N 1比特：正二次透镜组的最大像侧透镜元件的折射率。

38. 发明申请

US20060081801A1 Solenoid valve 有权
标题翻译：电磁阀
公开(公告)号：US20060081801A1
公开(公告)日：2006-04-20
申请号：US10541131
申请日：2004-10-19
申请人： Masaji Takahashi , Takayuki Ito
发明人： Masaji Takahashi , Takayuki Ito
IPC分类号： F16K31/02
CPC分类号： F16K31/0658 , F02M25/0836 , F02M2025/0845 , Y10T137/8667 , Y10T137/86759
摘要： A guide boss is provided in a diaphragm blocking the halfway portion of a channel; a valve disk is formed in the shape of a cylinder; the inner face of this cylinder-shaped valve disk is slidably engaged around the guide boss; and further, a valve port consisting of a plurality of long bores are formed in a diaphragm surrounding the guide boss. Thereby, fluid can responsively flow into the valve port when the valve disk is opened, and the follow-up of the fluid is accelerated.
摘要翻译：引导凸台设置在阻塞通道的中间部分的隔膜中; 阀盘形成为圆筒形状; 该圆柱形阀盘的内表面可滑动地接合在引导凸台周围; 此外，在围绕导向凸台的隔膜中形成有由多个长孔组成的阀口。因此，当阀盘打开时，流体可以响应地流入阀口，并且加速了流体的跟踪。

39. 发明授权

US07026205B2 Method for manufacturing semiconductor device, including multiple heat treatment 有权
标题翻译：制造半导体器件的方法，包括多次热处理
公开(公告)号：US07026205B2
公开(公告)日：2006-04-11
申请号：US10815931
申请日：2004-04-02
申请人： Takayuki Ito , Kyoichi Suguro
发明人： Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L21/8238 , H01L21/8234 , H01L21/336
CPC分类号： H01L21/823842
摘要： A semiconductor device manufacturing method having forming first and second insulating gate portions spaced from each other on a semiconductor substrate, selectively implanting the first conductivity type impurity ions to the first gate electrode and a surface layer of the semiconductor substrate adjacent to the first insulating gate portion, selectively implanting the second conductivity type impurity ions to the second gate electrode and the surface layer adjacent to the second insulating gate portion, after implanting the first and second conductivity types impurity ions, pre-annealing at a first substrate temperature, and after the pre-annealing, main-activating for the first and second types impurity ions at a second substrate temperature higher than the first substrate temperature for a treatment period shorter than a period of the pre-annealing.
摘要翻译：一种半导体器件制造方法，其具有形成在半导体衬底上彼此间隔开的第一和第二绝缘栅极部分，选择性地将第一导电类型杂质离子注入到第一栅电极和与第一绝缘栅极部分相邻的半导体衬底的表面层在将第一和第二导电类型的杂质离子注入到第二栅极电极和与第二绝缘栅极部分相邻的表面层之后，在第一衬底温度下进行预退火之后，以及在第一衬底温度之后，选择性地将第二导电型杂质离子注入在第一衬底温度高于第一衬底温度的第二衬底温度下处理短于预退火周期的处理期间，对第一和第二类杂质离子进行主要激活。

40. 发明申请

US20060074260A1 Method of producing a fluorine-containing compound 有权
标题翻译：含氟化合物的制造方法
公开(公告)号：US20060074260A1
公开(公告)日：2006-04-06
申请号：US11242776
申请日：2005-10-05
申请人： Yushi Kaneko , Takayuki Ito , Taizo Ono
发明人： Yushi Kaneko , Takayuki Ito , Taizo Ono
IPC分类号： C07C19/08 , C07C57/64
CPC分类号： C07B39/00 , C07C67/307 , C07C69/63
摘要： A method of producing a fluorine-containing compound, which contains the step of: fluorinating a substrate in a solvent with fluorine gas, wherein as said substrate, a substrate that cannot substantially undergo fluorinating reaction independently, is allowed to react, in the presence of a substrate that rapidly undergoes fluorinating reaction independently.
摘要翻译：一种制备含氟化合物的方法，其包括以下步骤：用氟气氟化溶剂中的基材，其中作为所述基材，独立地基本上不能进行氟化反应的基材在存在下进行反应快速独立地进行氟化反应的底物。

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