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31. 发明授权

US06213571B1 Control apparatus for an electric vehicle and a method therefor 失效
标题翻译：电动车辆控制装置及其方法
公开(公告)号：US06213571B1
公开(公告)日：2001-04-10
申请号：US09428518
申请日：1999-10-28
申请人： Hiroyuki Yamada , Nobuyoshi Takahashi , Kenichi Maehara , Minoru Kaminaga
发明人： Hiroyuki Yamada , Nobuyoshi Takahashi , Kenichi Maehara , Minoru Kaminaga
IPC分类号： H02P310
CPC分类号： B60L7/006 , B60L7/12 , B60L11/1805 , B60L15/2009 , B60L2240/423 , Y02T10/645 , Y02T10/7005 , Y02T10/72 , Y02T10/7275
摘要： Problems of a dead-time due to a make-contact delay time until the closure of the regeneration contactor and a drop of torque occurring in the prior art controller for an electric vehicle are solved by the invention, thereby providing an improved drive feeling during transition from its regenerating braking to plugging braking. Specifically, a regeneration contactor's contact voltage is entered to the arithmetic unit, upon set-up of a condition for stopping the regenerating braking, the control for closing the regeneration contactor is executed, and immediately upon detection of the actual closure thereof, the switching operation is cut off at a timing faster than the switching cycle thereby allowing for the transition to the plugging braking to be enabled.
摘要翻译：通过本发明解决了直到关闭再生接触器之前的接触延迟时间以及在现有技术的电动车辆控制器中发生的转矩下降的死区时间的问题，从而提供了转换期间改善的驱动感觉从其再生制动到堵塞制动。具体地说，再生接触器的接触电压被输入到运算单元中，在设定停止再生制动的条件时，执行关闭再生接触器的控制，并且在检测到实际关闭后立即进行切换动作在比开关周期更快的时间切断，从而允许转换到堵塞制动。

32. 发明授权

US5639776A 4, 5-dihydropyrazole-5-thione derivatives and miticides comprising the same 失效
标题翻译： 4,5-二氢吡唑-5-硫酮衍生物和包含它们的杀螨剂
公开(公告)号：US5639776A
公开(公告)日：1997-06-17
申请号：US702671
申请日：1996-09-11
申请人： Isao Tada , Minoru Motoki , Nobuyoshi Takahashi , Tetsuji Miyata
发明人： Isao Tada , Minoru Motoki , Nobuyoshi Takahashi , Tetsuji Miyata
IPC分类号： A01N43/56 , C07D231/18 , C07D401/04 , A01N43/40
CPC分类号： C07D401/04 , A01N43/56 , C07D231/18
摘要： The object of the present invention is to provide a novel 4, 5-dihydropyrazole-5-thione derivative which exerts remarkably potent miticidal activity. The 4, 5-dihydropyrazole-5-thione derivative of the present invention is represented by the general formula ##STR1## wherein R.sup.1 represents a straight- or branched-chain alkyl group having 1 to 12 carbon atoms or the like; R.sup.2 and R.sup.3 represent a lower alkyl group or the like; X represents a halogen atom or the like, n is 0 or an integer of 1 to 3; and A represents .paren open-st.C.paren close-st. or .paren open-st.N.paren close-st..
摘要翻译： PCT No.PCT / JP96 / 00044 Sec。 371日期：1996年9月11日 102（e）1996年9月11日PCT PCT 1996年1月12日PCT公布。出版物WO96 / 21651 日本1996年7月18日本发明的目的是提供一种具有显着效力的杀螨活性的新型4,5,5-二氢吡唑-5-硫酮衍生物。本发明的4,5-二氢吡唑-5-硫酮衍生物由通式“IMAGE”表示，其中R 1表示碳原子数1〜12的直链或支链烷基等; R2和R3表示低级烷基等; X表示卤原子等，n为0或1〜3的整数， A代表+545C + 546或+545N + 546。

33. 发明授权

US08569824B2 Semiconductor device and fabrication method for the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08569824B2
公开(公告)日：2013-10-29
申请号：US12360488
申请日：2009-01-27
申请人： Nobuyoshi Takahashi , Ichirou Matsuo
发明人： Nobuyoshi Takahashi , Ichirou Matsuo
IPC分类号： H01L29/792
CPC分类号： H01L27/11568
摘要： The semiconductor device includes: a plurality of bit lines formed in stripes in a semiconductor substrate of a first conductivity type, each of the bit lines being a diffusion layer of an impurity of a second conductivity type; a plurality of gate insulation films formed on regions of the semiconductor substrate between the bit lines; a plurality of word lines formed on the semiconductor substrate via the gate insulating films, the word lines extending in a direction intersecting with the bit lines; and a plurality of bit line isolation diffusion layers formed in regions of the semiconductor substrate between the word lines, each of the bit line isolation diffusion layers being a diffusion layer of an impurity of the first conductivity type. The bit line isolation diffusion layer includes a diffusion suppressor for suppressing diffusion of an impurity.
摘要翻译：半导体器件包括：在第一导电类型的半导体衬底中以条纹形成的多个位线，每个位线是第二导电类型的杂质的扩散层; 形成在位线之间的半导体衬底的区域上的多个栅极绝缘膜; 经由所述栅极绝缘膜形成在所述半导体衬底上的多个字线，所述字线在与所述位线相交的方向上延伸; 以及在所述字线之间的所述半导体衬底的区域中形成的多个位线隔离扩散层，所述位线隔离扩散层中的每一个为所述第一导电类型的杂质的扩散层。位线隔离扩散层包括用于抑制杂质扩散的扩散抑制器。

34. 发明申请

US20110158869A1 PROCESSING METHOD FOR RECOVERING IRON OXIDE AND HYDROCHLORIC ACID 有权
标题翻译：回收氧化铁和氢氯酸的处理方法
公开(公告)号：US20110158869A1
公开(公告)日：2011-06-30
申请号：US13000216
申请日：2009-06-18
申请人： Nobuyoshi Takahashi , Osama Taki , Herbert Weissenbaeck , Dieter Vogl
发明人： Nobuyoshi Takahashi , Osama Taki , Herbert Weissenbaeck , Dieter Vogl
IPC分类号： C01G49/06 , C01B7/03
CPC分类号： C01G49/06 , C01B7/0706 , C23G1/36
摘要： A method of processing waste iron chloride solution including ferrous chloride, ferric chloride or mixtures thereof and optionally free hydrochloric acid, includes concentrating waste iron chloride solution into concentrated liquid having iron chloride concentration of at least 30%-40% by weight; optionally oxidizing ferrous chloride in the concentrated liquid from the concentration step to ferric chloride providing liquid containing ferric chloride; hydrolyzing the liquid containing ferric chloride from the oxidation step at 155-350° C., maintaining the ferric chloride concentration at least at 65% by weight, generating steam containing hydrogen chloride and liquid containing ferric oxide; separating ferric oxide from the liquid containing ferric oxide in the hydrolysis step; condensing steam containing hydrogen chloride in the hydrolysis step, recovering hydrochloric acid at a concentration of at least 10%-15% by weight; and using condensation energy of the hydrogen chloride containing steam in the recovery step to heat the concentration step performed under reduced pressure.
摘要翻译：一种处理包括氯化亚铁，氯化铁或其混合物和任选的游离盐酸的废氯化铁溶液的方法包括将废铁水溶液浓缩至浓度为至少30％-40％（重量）的氯化铁浓缩液; 任选地将浓缩步骤中的浓缩液中的氯化亚铁氧化成三氯化铁提供含有氯化铁的液体; 在155-350℃下从氧化步骤水解含有氯化铁的液体，维持氯化铁浓度至少为65重量％，产生含有氯化氢的蒸汽和含有氧化铁的液体; 在水解步骤中从含有三氧化二铁的液体中分离出氧化铁; 在水解步骤中冷凝含有氯化氢的蒸汽，以至少10重量％-15重量％的浓度回收盐酸; 并且在回收步骤中使用含有氯化氢的蒸汽的冷凝能量来加热在减压下进行的浓缩步骤。

35. 发明授权

US07834401B2 Semiconductor device and fabrication method for the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07834401B2
公开(公告)日：2010-11-16
申请号：US12369283
申请日：2009-02-11
申请人： Nobuyoshi Takahashi
发明人： Nobuyoshi Takahashi
IPC分类号： H01L23/62
CPC分类号： H01L27/11573 , H01L27/0248 , H01L27/0629 , H01L27/105
摘要： The semiconductor device includes: memory cells each having a first multilayer electrode including a first lower electrode made of a first conductive film and a first upper electrode made of a second conductive film formed one on the other with a first interface film therebetween; and a diode having a diode electrode made of the second conductive film and a second interface film as a silicon oxide film formed at the interface between the diode electrode and a substrate. The first interface film has a thickness with which electrical connection between the lower electrode and the upper electrode is maintained, and the second interface film has a thickness with which epitaxial growth between the substrate and the diode electrode is inhibited.
摘要翻译：半导体器件包括：各自具有第一多层电极的存储单元，所述第一多层电极包括由第一导电膜制成的第一下部电极和由其间形成有第一界面膜的第二导电膜形成的第一上部电极; 以及具有由第二导电膜制成的二极管电极和形成在二极管电极和基板之间的界面处的氧化硅膜的第二界面膜的二极管。第一界面膜具有保持下电极和上电极之间的电连接的厚度，并且第二界面膜具有抑制衬底和二极管电极之间的外延生长的厚度。

36. 发明授权

US07309629B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07309629B2
公开(公告)日：2007-12-18
申请号：US11527459
申请日：2006-09-27
申请人： Nobuyoshi Takahashi
发明人： Nobuyoshi Takahashi
IPC分类号： H01L21/8238
CPC分类号： H01L27/105 , H01L27/11568 , H01L27/11573
摘要： In a method for fabricating a semiconductor device in which a semiconductor memory element having an ONO film and a CMOS part are formed on a single semiconductor substrate, a CMOS gate-oxidation step is performed several times. Thereafter, a bit line diffusion layer and a bit line oxide film are formed in the semiconductor memory element.
摘要翻译：在其中在单个半导体衬底上形成具有ONO膜和CMOS部分的半导体存储元件的半导体器件的制造方法中，进行多次CMOS栅极氧化步骤。此后，在半导体存储元件中形成位线扩散层和位线氧化膜。

37. 发明申请

US20060237757A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060237757A1
公开(公告)日：2006-10-26
申请号：US11405451
申请日：2006-04-18
申请人： Nobuyoshi Takahashi , Fumihiko Noro , Kenji Sato
发明人： Nobuyoshi Takahashi , Fumihiko Noro , Kenji Sato
IPC分类号： H01L29/94
CPC分类号： H01L27/11568 , H01L27/115
摘要： A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.
摘要翻译：半导体器件包括：半导体区域; 多个位线扩散层，其形成在所述半导体区域的上部，并且各自沿行方向延伸; 形成在位线扩散层上的多个位线绝缘膜; 形成在所述半导体区域上的各个相邻位线扩散层之间的多个栅极绝缘膜; 以及多个字线，各自在列方向上形成在半导体区域上，并且与字线绝缘膜和栅极绝缘膜交叉。存储单元形成在栅极绝缘膜和字线的交点处。包括与位线扩散层电连接的连接部分的多个连接扩散层形成在半导体区域的上部，并且连接部分的上表面的电平低于连接扩散部的上表面的高度半导体区域中的层。

38. 发明授权

US06899886B2 Acylacetonitriles, process for preparation thereof and miticides containing the same 有权
标题翻译：酰基丙腈，其制备方法和含有它们的杀螨剂
公开(公告)号：US06899886B2
公开(公告)日：2005-05-31
申请号：US10343811
申请日：2001-08-09
申请人： Nobuyoshi Takahashi , Satoshi Gotoda , Naoki Ishii , Yasuhiro Sasama
发明人： Nobuyoshi Takahashi , Satoshi Gotoda , Naoki Ishii , Yasuhiro Sasama
IPC分类号： A01N37/34 , A01N37/42 , C07C253/30 , C07C255/41 , C07C323/12 , C07C327/22 , A01N25/06 , C07C255/03
CPC分类号： C07C255/41 , A01N37/42 , C07C327/22
摘要： The acylacetonitrile compound of the invention is represented by the formula (1): wherein R1 represents —C(O)ZR2; R2 represents C1-6 alkyl, C1-4 haloalkyl or the like; Z represents oxygen or sulfur; X and Y independently represent halogen, C1-6 alkyl or C1-4 haloalkyl; and m and n are independently an integer of 1 to 3. The acylacetonitrile compound of the invention exhibits excellent miticidal and ovicidal activities for mites over a long period. Therefore, the acylacetonitrile compound of the invention is useful as a miticide.
摘要翻译：本发明的酰基乙腈化合物由式（1）表示：其中R 1表示-C（O）ZR 2; R 2表示C 1-6烷基，C 1-4卤代烷基等; Z表示氧或硫; X和Y独立地表示卤素，C 1-6烷基或C 1-4卤代烷基; m和n分别为1〜3的整数。本发明的酰基乙腈化合物长时间对螨具有优异的杀螨和杀卵活性。因此，本发明的酰基乙腈化合物可用作杀螨剂。

39. 发明授权

US4313312A Water producing air conditioning system 失效
标题翻译：生产空调系统
公开(公告)号：US4313312A
公开(公告)日：1982-02-02
申请号：US133432
申请日：1980-03-24
申请人： Toshio Ito , Hiromasa Matsuoka , Yoshio Hirayama , Nobuyoshi Takahashi
发明人： Toshio Ito , Hiromasa Matsuoka , Yoshio Hirayama , Nobuyoshi Takahashi
IPC分类号： E03B3/28 , F24F3/14 , F24F5/00 , F25D23/00
CPC分类号： F24F3/1411 , E03B3/28 , F24F3/1417 , F24F5/00 , F24F2003/144
摘要： A water producing-air conditioning system comprises a water producing apparatus which adsorbs moisture in the ambient air on an adsorbent or absorbent and evaporates water adsorbed on the adsorbent or absorbent by heating it and condenses steam to obtain water;a heat-exchanger which heat-exchange the ambient air with a hot dry air discharged from said water producing apparatus during adsorbing moisture on the adsorbent or absorbent; andan evaporation-cooling apparatus for forming a cold wet air by evaporating water and cooling it by contacting water with a dry air at the ambient temperature passed through said heat-exchanger.The hot air heated by said heat-exchanger or the cold air obtained from said evaporation-cooling apparatus is utilized for the air conditioning. The system can be used for comfortable living in a severe condition such as a desert by the effective combination of the evaporation-cooling apparatus with the water producing apparatus under utilizing heat-exchange in high efficiency.
摘要翻译：一种生产水的空调系统包括：将吸附剂或吸收剂上的环境空气中的水分吸附并通过加热吸附或吸收吸附剂吸收的水蒸发而蒸发得到水的水生产装置; 热交换器，在吸附剂或吸收剂吸附水分的同时，用从所述水处理设备排出的热干燥空气对周围空气进行热交换; 以及蒸发冷却装置，用于通过蒸发水形成冷湿空气，并通过使水与通过所述热交换器的环境温度下的干燥空气接触来冷却。由所述热交换器加热的热空气或由所述蒸发冷却装置获得的冷空气用于空调。通过在高效率地利用热交换的条件下，通过蒸发冷却装置与制水装置的有效结合，可以将系统用于沙漠等恶劣条件下的舒适生活。

40. 发明授权

US4304577A Water producing apparatus 失效
标题翻译：生水装置
公开(公告)号：US4304577A
公开(公告)日：1981-12-08
申请号：US119641
申请日：1980-02-07
申请人： Toshio Ito , Hiromasa Matsuoka , Kenkoku Azuma , Yoshio Hirayama , Nobuyoshi Takahashi
发明人： Toshio Ito , Hiromasa Matsuoka , Kenkoku Azuma , Yoshio Hirayama , Nobuyoshi Takahashi
IPC分类号： B01D53/26 , E03B3/28 , B01D53/04
CPC分类号： B01D53/261 , E03B3/28 , B01D2259/402 , Y02W10/37
摘要： A water producing apparatus is, as a principle, to produce liquid water from moisture in the air by adsorbing the moisture on an adsorbent and then desorbing water from the adsorbent by heating it and condensing steam into liquid water. The water producing apparatus comprises a recycling passage for recycling steam through an adsorbent column in the desorbing step, a heater for heating the steam in the recycling passage; and a condenser branched from the recycling passage. In the desorbing step, steam in the recycling passage is heated by the heater to heat the adsorbent and to desorb water from the adsorbent and excess of steam corresponding to the desorbed steam is passed from the recycling passage to the branched condenser and is condensed to obtain liquid water in high efficiency.
摘要翻译：作为原理，水生产设备通过将吸附剂上的水分吸附在吸附剂上，然后通过加热并将蒸汽冷凝成液态水从吸附剂中解吸水来从空气中的水分中产生液态水。该生产装置包括：在解吸步骤中通过吸附塔回收蒸汽的回收通道，用于加热回收通道中的蒸汽的加热器; 和从回收通道分支的冷凝器。在解吸步骤中，再循环通道中的蒸汽被加热器加热以加热吸附剂并从吸附剂中解吸出水，并将与解吸蒸汽相对应的过量蒸汽从再循环通道传送至分支冷凝器并冷凝以获得液态水效率高。

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