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31. 发明授权

US08704386B2 Thermoelectric generator 有权
标题翻译：热电发电机
公开(公告)号：US08704386B2
公开(公告)日：2014-04-22
申请号：US12902355
申请日：2010-10-12
申请人： Thomas Skotnicki
发明人： Thomas Skotnicki
IPC分类号： F02B63/04 , F01K15/00 , B60L1/02
CPC分类号： F03G7/06 , H02N10/00 , Y02T10/166
摘要： A thermoelectric generator including a membrane maintained by lateral ends and capable of taking a first shape when its temperature reaches a first threshold and a second shape when its temperature reaches a second threshold greater than the first threshold; at least one electrically conductive element attached to with the membrane and connecting the lateral ends of the membrane; and circuitry capable of generating, at the level of the membrane, a magnetic field orthogonal to the membrane displacement direction, the lateral ends of the membrane being connected to output terminals of the generator.
摘要翻译：一种热电发电机，其包括由横向端部保持的膜，当其温度达到第一阈值时，当其温度达到大于第一阈值的第二阈值时能够获得第一形状; 至少一个导电元件与膜连接并连接膜的侧端; 以及能够在膜的水平处产生与膜移位方向正交的磁场的电路，膜的横向端部连接到发生器的输出端子。

32. 发明授权

US08492958B2 Device for converting thermal power into electricity 有权
标题翻译：将火力转换为电力的装置
公开(公告)号：US08492958B2
公开(公告)日：2013-07-23
申请号：US12911267
申请日：2010-10-25
申请人： Thomas Skotnicki
发明人： Thomas Skotnicki
IPC分类号： H02N2/18
CPC分类号： H02N2/18
摘要： A device for converting thermal power into electric power including a plurality of bimetallic strips disposed between a rigid support and a plate of a resilient plastic material; and on the side of the plate of a resilient plastic material opposite to the strips, a layer of a piezoelectric material connected to output terminals, wherein the rigid support is capable of being in contact with a hot source, and the plate of a resilient plastic material is capable of transmitting to the piezoelectric layer the mechanical stress due to the deformations of the bimetallic strips.
摘要翻译：一种用于将热功率转换成电力的装置，包括设置在刚性支撑件和弹性塑料材料板之间的多个双金属条; 并且在与所述条带相反的弹性塑料材料的所述板的一侧上，连接到输出端子的压电材料层，其中所述刚性支撑件能够与热源接触，并且所述弹性塑料板材料能够向压电层传递由于双金属条的变形引起的机械应力。

33. 发明授权

US07803694B2 Process for transferring a layer of strained semiconductor material 有权
标题翻译：用于转移应变半导体材料层的工艺
公开(公告)号：US07803694B2
公开(公告)日：2010-09-28
申请号：US12170583
申请日：2008-07-10
申请人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
发明人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer.
摘要翻译：半导体晶片具有应变半导体材料的薄层。这些结构包括底物; 基底上的氧化物层; 氧化物层上的碳化硅（SiC）层，以及在碳化硅层上处于应变状态的半导体材料的应变层，或者由施主衬底上的由随后的外延生长引起应变的材料制成的匹配层生长层; 在应变状态下具有规定厚度的半导体材料的应变层; 以及在应变层上的绝缘或半绝缘层，其厚度保持应变层的应变状态。绝缘层或半绝缘层由碳化硅或氧化物制成并用于将应变保留在应变层中。

34. 发明授权

US07297578B2 Method for producing a field effect transistor 有权
标题翻译：制造场效应晶体管的方法
公开(公告)号：US07297578B2
公开(公告)日：2007-11-20
申请号：US10943242
申请日：2004-09-16
申请人： Thomas Skotnicki , Philippe Coronel , Joël Hartmann
发明人： Thomas Skotnicki , Philippe Coronel , Joël Hartmann
IPC分类号： H01L21/00 , H01L21/4763 , H01L21/302
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/42392 , H01L29/66772 , H01L29/66787
摘要： A field effect transistor is produced on a substrate. A semiconductor material is deposited on a portion of a single crystal temporary material. At least part of the temporary material is removed. A portion of a conducting material is then formed above and beneath the portion of semiconductor material. A layer of an electrically insulating material is located between the portion of temporary material and the substrate.
摘要翻译：在衬底上产生场效晶体管。半导体材料沉积在单晶临时材料的一部分上。至少部分暂时的材料被去除。然后在半导体材料的部分的上方和下方形成导电材料的一部分。电绝缘材料层位于临时材料的部分和基底之间。

35. 发明授权

US07224015B1 Method for making a stack of capacitors, in particular for dynamic random access memory [DRAM] 有权
标题翻译：制造电容器堆叠的方法，特别是用于动态随机存取存储器[DRAM]
公开(公告)号：US07224015B1
公开(公告)日：2007-05-29
申请号：US10129881
申请日：2000-11-10
申请人： Thomas Skotnicki , Malgorzata Jurczak , Catherine Mallardeau
发明人： Thomas Skotnicki , Malgorzata Jurczak , Catherine Mallardeau
IPC分类号： H01L27/108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/60
摘要： The invention concerns a method which consists in forming on a substrate (1) coated with a dielectric material layer (3) provided with a window (3a), a stack of successive layers alternately of germanium or SiGe alloy (4, 6, 8) and polycrystalline silicon (5, 7, 9); selective partial elimination of the germanium or SiGe alloy layers, to form an tree-like structure; forming a thin layer of dielectric material (10) on the tree-like structure; and coating the tree-like structure with polycrystalline silicon (11). The invention is useful for making dynamic random-access memories.
摘要翻译：本发明涉及一种方法，该方法包括在涂覆有设置有窗口（3a）的介电材料层（3）的基底（1）上，交替地具有锗或SiGe合金（4,6,8 ）和多晶硅（5,7,9）; 选择性地部分消除锗或SiGe合金层，形成树状结构; 在树状结构上形成介电材料薄层（10）; 并用多晶硅（11）涂覆树状结构。本发明对于制作动态随机存取存储器是有用的。

36. 发明授权

US07214597B2 Electronic components and method of fabricating the same 有权
标题翻译：电子部件及其制造方法
公开(公告)号：US07214597B2
公开(公告)日：2007-05-08
申请号：US10421368
申请日：2003-04-23
申请人： Philippe Coronel , Francois Leverd , Thomas Skotnicki
发明人： Philippe Coronel , Francois Leverd , Thomas Skotnicki
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/6835 , H01L21/32134 , H01L21/76251 , H01L23/544 , H01L27/10852 , H01L27/1087 , H01L27/10873 , H01L27/1203 , H01L28/91 , H01L29/66484 , H01L29/66772 , H01L29/7831 , H01L29/78645 , H01L29/78648 , H01L51/0013 , H01L2221/68363 , H01L2223/54426 , H01L2223/54453 , H01L2224/83894 , H01L2924/01019 , H01L2924/01079 , H01L2924/13091 , H01L2924/19041 , H01L2924/00
摘要： A method is provided for fabricating integrated electronic components. According to the method, an initial structure is produced on the surface of a first substrate. This initial structure incorporates a defined pattern formed from volumes of differentiated materials. At least part of the initial substrate that includes the defined pattern is transferred onto a second substrate, preferably by inverting the first substrate against the second substrate and then removing the first substrate. An additional structure is then produced on the second substrate. This additional structure includes volumes of material placed in correspondence with some of the volumes of differentiated material of the defined pattern. The electronic components thus produced may have a suitable configuration in accordance with technological or geometrical constraints. In a preferred method, a selective treatment is applied to the transferred part of the initial structure, so as to make a distinction between the volumes of differentiated material of the pattern.
摘要翻译：提供了一种用于制造集成电子部件的方法。根据该方法，在第一基板的表面上产生初始结构。该初始结构包含由差异化材料体积形成的限定图案。包括限定图案的初始衬底的至少一部分被转移到第二衬底上，优选地通过使第一衬底相对于第二衬底反转，然后去除第一衬底。然后在第二基板上产生另外的结构。该附加结构包括与限定图案的一些体积不同的材料相对应放置的材料体积。如此制造的电子部件可以根据技术或几何约束具有合适的构造。在优选的方法中，对初始结构的转移部分应用选择性处理，以区分图案的差异材料的体积。

37. 发明授权

US07188411B2 Process for forming portions of a compound material inside a cavity 有权
标题翻译：在腔内形成复合材料的部分的工艺
公开(公告)号：US07188411B2
公开(公告)日：2007-03-13
申请号：US10657514
申请日：2003-09-08
申请人： Philippe Coronel , Christophe Regnier , François Wacquant , Thomas Skotnicki
发明人： Philippe Coronel , Christophe Regnier , François Wacquant , Thomas Skotnicki
IPC分类号： H01K3/10
CPC分类号： H01L29/6675 , Y10T29/49155 , Y10T29/49156 , Y10T29/4916 , Y10T29/49165 , Y10T29/49167
摘要： A process for forming portions of a compound material within an electronic circuit includes the formation of a cavity having at least one opening facing onto an access surface. The cavity furthermore has an internal wall with at least one region made of an initial material (for example, silicon). A metal is deposited close to the region of initial material. The circuit is then heated to form a portion of the compound material (for example, a silicide) in the region of initial material inside the cavity. The compound material is formed from elements of the initial material and from some of the metal deposited. The excess metal that has not formed some of the compound material is then removed from the cavity.
摘要翻译：在电子电路内形成复合材料部分的工艺包括形成具有面向入口表面的至少一个开口的空腔。该腔还具有内壁，其具有由初始材料（例如硅）制成的至少一个区域。金属沉积在初始材料区域附近。然后将电路加热以在腔内的初始材料区域中形成复合材料（例如，硅化物）的一部分。复合材料由初始材料的元素和沉积的一些金属形成。然后从空腔中除去未形成一些复合材料的多余金属。

38. 发明申请

US20050023617A1 Conductive lines buried in insulating areas 审中-公开
标题翻译：导电线埋在绝缘区域
公开(公告)号：US20050023617A1
公开(公告)日：2005-02-03
申请号：US10903527
申请日：2004-07-30
申请人： Jean-Pierre Schoellkopf , Robin Cerutti , Philippe Coronel , Thomas Skotnicki
发明人： Jean-Pierre Schoellkopf , Robin Cerutti , Philippe Coronel , Thomas Skotnicki
IPC分类号： H01L21/74 , H01L21/762 , H01L21/765 , H01L21/768 , H01L21/8244 , H01L23/485 , H01L23/528 , H01L23/535 , H01L27/11 , H01L29/78 , H01L27/10 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L21/743 , H01L21/76224 , H01L21/765 , H01L21/76802 , H01L21/76838 , H01L21/76895 , H01L23/485 , H01L23/5286 , H01L23/535 , H01L27/11 , H01L27/1104 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit comprising a semiconductor substrate in which active areas surround or are surrounded by hollowings filled with an insulator, and in which a conductive region is embedded in the insulator of at least one hollowing, the conductive region being connected to a reference voltage and being connected at least one neighboring element of the circuit.
摘要翻译：一种集成电路，包括半导体衬底，其中有源区域围绕或被填充有绝缘体的中空部围绕，并且其中导电区域嵌入至少一个中空的绝缘体中，所述导电区域连接到参考电压，并且连接电路的至少一个相邻元件。

39. 发明授权

US06727186B1 Method for lateral etching with holes for making semiconductor devices 失效
标题翻译：用于半导体器件的用于横向蚀刻孔的方法
公开(公告)号：US06727186B1
公开(公告)日：2004-04-27
申请号：US10019340
申请日：2002-04-15
申请人： Thomas Skotnicki , Malgorzata Jurczak
发明人： Thomas Skotnicki , Malgorzata Jurczak
IPC分类号： H01L2100
CPC分类号： H01L29/513 , H01L21/28167 , H01L21/7624 , H01L29/0649 , H01L29/515 , H01L29/66772 , H01L29/78603 , H01L29/78654
摘要： A method of fabricating an SON structure semiconductor device is described. There is formed, on a silicon substrate, a stack of layers comprising first and second successive combinations. Each successive combination has a bottom silicon-germanium alloy (Site) layer and a top silicon layer. In a conventional way, a gate dielectric layer, a gate, spacers, source and drain regions, and an external passivating layer are formed by ionic implantation. A vertical hole is formed in the gate as far as the bottom Site layer to etch a part of the Site layers to form tunnels. The walls of the hole and the tunnels are then internally passivated so that the tunnels can remain empty or be filled.
摘要翻译：描述了制造SON结构半导体器件的方法。在硅衬底上形成包括第一和第二连续组合的一叠层。每个连续组合具有底部硅 - 锗合金（场）层和顶部硅层。以常规方式，通过离子注入形成栅介电层，栅极，间隔物，源极和漏极区域以及外部钝化层。在栅极中形成垂直孔至底部位置层，以蚀刻部分位点层以形成隧道。然后将洞内的隧道和隧道内部钝化，以使隧道保持空闲或被填满。

40. 发明授权

US06607968B1 Method for making a silicon substrate comprising a buried thin silicon oxide film 有权
标题翻译：一种用于制造包含掩埋的薄氧化硅膜的硅衬底的方法
公开(公告)号：US06607968B1
公开(公告)日：2003-08-19
申请号：US10018680
申请日：2002-04-22
申请人： Malgorzata Jurczak , Thomas Skotnicki
发明人： Malgorzata Jurczak , Thomas Skotnicki
IPC分类号： H01L2130
CPC分类号： H01L21/76251
摘要： A method for making a silicon substrate having a buried thin silicon oxide film is described. The method consists of: a) producing a first element having a first silicon body whereof the main surface is coated, in succession, with a buffer layer of germanium, or of an alloy of germanium and silicon, and with a thin silicon film; b) producing a second element, having a silicon body whereof a main surface is coated with a thin silicon oxide film; c) linking the first element with the second element such that the thin silicon film of the first element is in contact with the thin silicon oxide film of the second element; and d) eliminating the buffer layer to recuperate the silicon substrate having a buried thin silicon oxide film and a reusable silicon substrate. The method may be useful in making microelectronic devices such as CMOS and MOSFET devices.
摘要翻译：描述了制造具有掩埋的薄氧化硅膜的硅衬底的方法。该方法包括：a）制备具有第一硅体的第一元件，该第一硅体的主表面依次用锗的缓冲层或锗和硅的合金以及薄的硅膜涂覆; b）制造具有硅主体的第二元件，主体表面涂覆有薄的氧化硅膜; c）将第一元件与第二元件连接，使得第一元件的薄硅膜与第二元件的薄氧化硅膜接触; 以及d）消除缓冲层以恢复具有掩埋的薄氧化硅膜和可重复使用的硅衬底的硅衬底。该方法可用于制造诸如CMOS和MOSFET器件的微电子器件。

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