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31. 发明授权

US08999847B2 a-Si seasoning effect to improve SiN run-to-run uniformity 有权
标题翻译： a-Si调味效果提高了SiN运行均匀性
公开(公告)号：US08999847B2
公开(公告)日：2015-04-07
申请号：US13207315
申请日：2011-08-10
申请人： Gaku Furuta , Soo Young Choi , Beom Soo Park , Young-jin Choi , Omori Kenji
发明人： Gaku Furuta , Soo Young Choi , Beom Soo Park , Young-jin Choi , Omori Kenji
IPC分类号： H01L21/311 , H01L21/02 , C23C16/34 , C23C16/44
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/4404 , H01L21/02274 , H01L21/02299
摘要： Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.
摘要翻译：本发明的实施方案提供了在设置在处理室中的大尺寸基板上沉积含氮材料的方法。在一个实施方案中，一种方法包括处理处理室内的一批衬底，以将一批含有底物的含氮材料从该批衬底上沉积，并在处理该批衬底期间以预定间隔进行调味过程以沉积导电在处理室中设置的腔室部件的表面上的调味层。腔室部件可以包括由裸铝制成而不阳极氧化的气体分配板。在一个示例中，导电调味层可以包括非晶硅，掺杂非晶硅，掺杂硅，掺杂多晶硅，掺杂碳化硅等。

32. 发明授权

US08906813B2 SiOx process chemistry development using microwave plasma CVD 有权
标题翻译：使用微波等离子体CVD的SiOx工艺化学开发
公开(公告)号：US08906813B2
公开(公告)日：2014-12-09
申请号：US13886175
申请日：2013-05-02
申请人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
发明人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
IPC分类号： H01L21/31 , H01L21/02 , C23C16/40 , C23C16/455 , C23C16/511 , C23C16/54
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

33. 发明授权

US08289489B2 Fringe-field-switching-mode liquid crystal display and method of manufacturing the same 有权
标题翻译：边缘场开关模式液晶显示器及其制造方法
公开(公告)号：US08289489B2
公开(公告)日：2012-10-16
申请号：US12692173
申请日：2010-01-22
申请人： Moo Shik Im , Dong Hae Seo , Dae Lim Choi , Jong Kyun Park , Soo Young Choi
发明人： Moo Shik Im , Dong Hae Seo , Dae Lim Choi , Jong Kyun Park , Soo Young Choi
IPC分类号： G02F1/1343
CPC分类号： G02F1/133512 , G02F1/134363 , G02F2001/134372 , G02F2201/40
摘要： Provided are a fringe-field-switching (FFS)-mode liquid crystal display (LCD) and a method of manufacturing the same. The FFS-mode LCD includes a transparent common electrode, a conductive reflection structure electrically connected to the transparent common electrode, and a transparent pixel electrode formed on the conductive reflection structure and including a plurality of slits. The transparent common electrode is formed on a region including a data line and a gate line so that respective unit pixel regions can be electrically connected to one another.
摘要翻译：提供了边缘场切换（FFS）模式液晶显示器（LCD）及其制造方法。 FFS模式LCD包括透明公共电极，电连接到透明公共电极的导电反射结构，以及形成在导电反射结构上并包括多个狭缝的透明像素电极。透明公共电极形成在包括数据线和栅极线的区域上，使得各个单位像素区域可以彼此电连接。

34. 发明授权

US08142606B2 Apparatus for depositing a uniform silicon film and methods for manufacturing the same 有权
标题翻译：用于沉积均匀硅膜的设备及其制造方法
公开(公告)号：US08142606B2
公开(公告)日：2012-03-27
申请号：US11759542
申请日：2007-06-07
申请人： Soo Young Choi , Tae Kyung Won , Beom Soo Park , John M. White
发明人： Soo Young Choi , Tae Kyung Won , Beom Soo Park , John M. White
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： C23C16/45565 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02P70/521
摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.
摘要翻译：提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

35. 发明授权

US08114484B2 Plasma enhanced chemical vapor deposition technology for large-size processing 有权
标题翻译：用于大尺寸加工的等离子体增强化学气相沉积技术
公开(公告)号：US08114484B2
公开(公告)日：2012-02-14
申请号：US11833983
申请日：2007-08-04
申请人： Ya-Tang Yang , Tae Kyung Won , Soo Young Choi , Takako Takehara , John M. White
发明人： Ya-Tang Yang , Tae Kyung Won , Soo Young Choi , Takako Takehara , John M. White
IPC分类号： H01H1/24 , C23C16/00
CPC分类号： H01J37/32357 , C23C16/24 , C23C16/345 , C23C16/5096 , H01J37/32091
摘要： Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber.
摘要翻译：提供了使用低温等离子体增强化学气相沉积（PECVD）工艺形成适用于晶体管制造的膜堆叠的方法。在一个实施例中，该方法包括在PECVD室中提供衬底，在衬底上沉积双层SiNx膜，在SiNx膜上沉积双层非晶硅膜，以及在双层非晶体上沉积n掺杂硅膜硅膜。上述膜在相同的PECVD室中以低于约300摄氏度的温度沉积。

36. 发明申请

US20120009356A1 CONTAMINATION REDUCING LINER FOR INDUCTIVELY COUPLED CHAMBER 审中-公开
标题翻译：污染减少衬板用于电感耦合室
公开(公告)号：US20120009356A1
公开(公告)日：2012-01-12
申请号：US13238729
申请日：2011-09-21
申请人： Soo Young Choi , Qunhua Wang
发明人： Soo Young Choi , Qunhua Wang
IPC分类号： C23C16/505 , H05H1/24
CPC分类号： C23C16/4404
摘要： A method and apparatus for depositing a film through a plasma enhance chemical vapor deposition process is provided. In one embodiment, an apparatus includes a processing chamber having a coil disposed in the chamber and routed proximate the chamber wall. A liner is disposed over the coil and is protected by a coating of a material, wherein the coating of material has a film property similar to the liner. In one embodiment, the liner is a silicon containing material and is protected by the coating of the material. Thus, in the event that some of the protective coating of material is inadvertently sputtered, the sputter material is not a source of contamination if deposited on the substrate along with the deposited deposition film on the substrate.
摘要翻译：提供了一种通过等离子体沉积膜的方法和装置，提高了化学气相沉积工艺。在一个实施例中，一种设备包括处理室，其具有设置在室中的线圈并且靠近室壁布置。衬套设置在线圈上方并被材料涂层保护，其中材料涂层具有类似于衬垫的膜性质。在一个实施例中，衬垫是含硅材料，并且被材料的涂层保护。因此，在材料的一些保护涂层被无意中溅射的情况下，如果沉积在衬底上并且沉积在衬底上的沉积膜，则溅射材料不是污染源。

37. 发明授权

US08075690B2 Diffuser gravity support 有权
标题翻译：扩散器重力支撑
公开(公告)号：US08075690B2
公开(公告)日：2011-12-13
申请号：US12234359
申请日：2008-09-19
申请人： Ernst Keller , John M. White , Robin L. Tiner , Jiri Kucera , Soo Young Choi , Beom Soo Park , Michael Starr
发明人： Ernst Keller , John M. White , Robin L. Tiner , Jiri Kucera , Soo Young Choi , Beom Soo Park , Michael Starr
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/3244 , C23C16/45565
摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.
摘要翻译：公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑扩散器没有周界支撑。在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

38. 发明申请

US20110241892A1 Frequency Monitoring to Detect Plasma Process Abnormality 有权
标题翻译：频率监测检测等离子体过程异常
公开(公告)号：US20110241892A1
公开(公告)日：2011-10-06
申请号：US13042408
申请日：2011-03-07
申请人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
发明人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
IPC分类号： G08B21/00 , G01R13/14
CPC分类号： H01J37/32174 , H01J37/32935 , H03H7/40
摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
摘要翻译：通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。在第二方面，第二对下限和上限不适合电源的频率。两个方面优选一起用于检测异常状况的不同出现。

39. 发明授权

US07902346B2 Fusion protein comprising FK506 binding protein and DNA encoding the same 有权
标题翻译：包含FK506结合蛋白的融合蛋白和编码该融合蛋白的DNA
公开(公告)号：US07902346B2
公开(公告)日：2011-03-08
申请号：US12144890
申请日：2008-06-24
申请人： Soo Young Choi , Jinseu Park , Won Sik Eum , Dae-Won Kim , Jin-Hee Choi , Tae-Yoon Kim , Hyung-Joo Kwon
发明人： Soo Young Choi , Jinseu Park , Won Sik Eum , Dae-Won Kim , Jin-Hee Choi , Tae-Yoon Kim , Hyung-Joo Kwon
IPC分类号： C07H21/04 , C07K14/00 , C12P21/00
CPC分类号： C12N9/90 , C07K2319/01
摘要： Disclosed is a fusion protein containing a FK506 binding protein and a cell-transducing domain. Also, disclosed is a method of making the fusion protein and use of the fusion protein in a pharmaceutical or cosmetic composition. The cell-transducing domain is, for example, a PEP-1.
摘要翻译：披露了含有FK506结合蛋白和细胞转导结构域的融合蛋白。此外，还公开了在药物或化妆品组合物中制备融合蛋白并使用融合蛋白的方法。细胞转导结构域是例如PEP-1。

40. 发明申请

US20100288197A1 ANODIZED SHOWERHEAD 有权
标题翻译：阳光淋浴
公开(公告)号：US20100288197A1
公开(公告)日：2010-11-18
申请号：US12779167
申请日：2010-05-13
申请人： Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L. Tiner , John M. White , Shinichi Kurita
发明人： Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L. Tiner , John M. White , Shinichi Kurita
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
摘要翻译：本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。射频是RF处理室遇到的一个常见问题。为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在最靠近室壁的淋浴头。阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

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