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31. 发明授权

US5007242A Thermoelectric humidifier and display case provided with such humidifier 失效
标题翻译：带加湿器的热电加湿器和展示柜
公开(公告)号：US5007242A
公开(公告)日：1991-04-16
申请号：US409338
申请日：1989-09-19
申请人： Hitoshi Nakayama
发明人： Hitoshi Nakayama
IPC分类号： A47F3/04 , F24F5/00 , F24F6/02 , F25B21/02
CPC分类号： A47F3/0495 , F24F5/0042 , F24F6/025 , F25B21/02
摘要： Here is disclosed a humidifier in which a water reservoir is provided on a heat radiating side of an element having Peltier effect and said element is energized so that a quantity of water filling said reservoir is heat-evaporated by calorific power radiated from said element and water vapor thus obtained is used to protect foods, cake, dairy products etc. against drying. More preferably, a blowing fan is provided on the cooling side of the Peltier element and cooled air stream is exhausted together with the air stream containing heated stream through a common outlet. Said humidifier may be located on the outlet side of cooled air supplied form a cooling coil of a display case to avoid inconvenience that humidified air might be brought into direct contact with the cooling coil and condensated, with loss of humidified steam.

32. 发明授权

US08785241B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08785241B2
公开(公告)日：2014-07-22
申请号：US13174960
申请日：2011-07-01
申请人： Shinya Sasagawa , Hitoshi Nakayama , Masashi Tsubuku , Daigo Shimada
发明人： Shinya Sasagawa , Hitoshi Nakayama , Masashi Tsubuku , Daigo Shimada
IPC分类号： H01L21/44 , H01L21/336
CPC分类号： H01L29/66969 , H01L22/14 , H01L27/088 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/45 , H01L29/4908 , H01L29/7869
摘要： When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process.
摘要翻译：当制造具有底栅底接触结构的晶体管时，例如，构成源极和漏极的导电层具有三层结构，并且执行两步蚀刻。在第一蚀刻工艺中，采用其中至少第二膜和第三膜的蚀刻速率高的蚀刻方法，并且进行第一蚀刻处理直到至少第一膜暴露。在第二蚀刻工艺中，第一膜的蚀刻速率高于第一蚀刻工艺中的蚀刻速率和“下面提供并与第一膜接触的”层的蚀刻速率的蚀刻方法低于采用第一蚀刻工艺。当在第二蚀刻工艺之后去除抗蚀剂掩模时，第二膜的侧壁被稍微蚀刻。

33. 发明授权

US08637354B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08637354B2
公开(公告)日：2014-01-28
申请号：US13159804
申请日：2011-06-14
申请人： Shinya Sasagawa , Hitoshi Nakayama , Masashi Tsubuku , Daigo Shimada
发明人： Shinya Sasagawa , Hitoshi Nakayama , Masashi Tsubuku , Daigo Shimada
IPC分类号： H01L21/00 , H01L29/04
CPC分类号： H01L29/7869 , H01L29/45 , H01L29/66969
摘要： When a transistor including a conductive layer having a three-layer structure is manufactured, three-stage etching is performed. In the first etching process, an etching method in which the etching rates for the second film and the third film are high is employed, and the first etching process is performed until the first film is at least exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. In the third etching process, an etching method in which the etching rates for the first to the third films are higher than those in the second etching process is preferably employed.
摘要翻译：当制造包括具有三层结构的导电层的晶体管时，进行三级蚀刻。在第一蚀刻工艺中，采用其中第二膜和第三膜的蚀刻速率高的蚀刻方法，并且执行第一蚀刻处理直到第一膜至少暴露。在第二蚀刻工艺中，第一膜的蚀刻速率高于第一蚀刻工艺中的蚀刻速率和“下面设置并与第一膜接触的”层的蚀刻速率的蚀刻方法低于采用第一蚀刻工艺。在第三蚀刻工艺中，优选使用其中第一至第三膜的蚀刻速率高于第二蚀刻工艺中的蚀刻速率的蚀刻方法。

34. 发明授权

US08597992B2 Transistor and manufacturing method of the same 有权
标题翻译：晶体管及其制造方法相同
公开(公告)号：US08597992B2
公开(公告)日：2013-12-03
申请号：US13026520
申请日：2011-02-14
申请人： Shinya Sasagawa , Masashi Tsubuku , Hitoshi Nakayama , Daigo Shimada
发明人： Shinya Sasagawa , Masashi Tsubuku , Hitoshi Nakayama , Daigo Shimada
IPC分类号： H01L21/00
CPC分类号： H01L21/76838 , H01L21/32136 , H01L21/32139 , H01L29/66969 , H01L29/7869
摘要： A transistor is manufactured by a method including: forming a first wiring layer; forming a first insulating film to cover the first wiring layer; forming a semiconductor layer over the first insulating film; forming a conductive film over the semiconductor layer; and performing at least two steps of etching on the conductive film to form second wiring layers which are apart from each other, wherein the two steps of etching include at least a first etching process performed under the condition that the etching rate for the conductive film is higher than the etching rate for the semiconductor layer, and a second etching process performed under the condition that the etching rates for the conductive film and the semiconductor layer are higher than those of the first etching process.
摘要翻译：晶体管通过以下方法制造：包括：形成第一布线层; 形成第一绝缘膜以覆盖所述第一布线层; 在所述第一绝缘膜上形成半导体层; 在半导体层上形成导电膜; 并且对所述导电膜进行蚀刻的至少两个步骤以形成彼此分离的第二布线层，其中所述两个蚀刻步骤至少包括在导电膜的蚀刻速率为高于半导体层的蚀刻速率，以及在导电膜和半导体层的蚀刻速率高于第一蚀刻工艺的蚀刻速率的条件下进行的第二蚀刻工艺。

35. 发明授权

US08194714B2 Light emitting and receiving device 有权
标题翻译：发光和接收装置
公开(公告)号：US08194714B2
公开(公告)日：2012-06-05
申请号：US12781257
申请日：2010-05-17
申请人： Hitoshi Nakayama
发明人： Hitoshi Nakayama
IPC分类号： H01S5/00 , H01L21/00
CPC分类号： H01S5/0264 , H01S5/1085 , H01S5/4031 , H01S5/4068
摘要： A light emitting and receiving device having a first region and a second region adjacent to the first region in a plan view, includes: a light absorbing layer formed in the first and second regions; a first cladding layer formed above the light absorbing layer; an active layer formed above the first cladding layer in the first region; and a second cladding layer formed above the active layer, wherein at least part of the active layer forms a gain region, a stepped side surface having an end surface of the gain region is formed at the boundary between the first region and the second region, light produced in the gain region exits through the end surface of the gain region, and part of the light having exited reaches the light absorbing layer in the second region and is received by the light absorbing layer.
摘要翻译：在平面图中具有第一区域和与第一区域相邻的第二区域的发光和接收装置包括：形成在第一和第二区域中的光吸收层; 形成在所述光吸收层的上方的第一覆层; 在第一区域中形成在第一包层上方的有源层; 以及形成在所述有源层上方的第二覆层，其中所述有源层的至少一部分形成增益区域，在所述第一区域和所述第二区域之间的边界处形成具有所述增益区域的端面的阶梯侧面，在增益区域中产生的光通过增益区域的端面离开，并且退出的一部分光到达第二区域中的光吸收层并被光吸收层接收。

36. 发明授权

US06946751B2 Wind power generation system 有权
标题翻译：风力发电系统
公开(公告)号：US06946751B2
公开(公告)日：2005-09-20
申请号：US10713031
申请日：2003-11-17
申请人： Yasuo Yoshida , Hiroshi Jimbo , Takatoshi Egami , Yoshihito Hirano , Toshiyuki Ando , Hitoshi Nakayama
发明人： Yasuo Yoshida , Hiroshi Jimbo , Takatoshi Egami , Yoshihito Hirano , Toshiyuki Ando , Hitoshi Nakayama
IPC分类号： F03D7/04 , F03D9/00 , F03D9/02 , F03D11/00 , H02J3/38 , H02P9/00 , H02P9/04
CPC分类号： F03D7/028 , F03D7/0204 , F03D7/0224 , F03D7/042 , F05B2260/80 , F05B2260/821 , F05B2270/20 , F05B2270/32 , F05B2270/321 , F05B2270/805 , Y02E10/723 , Y02E10/725 , Y02P80/158
摘要： A wind power generation system capable of outputting generated power at high efficiency with a smoothed output power includes a wind power generator and a laser aerovane mounted on the wind power generator or located near the wind power generator. Direction and velocity of wind blowing toward the wind power generator are observed using the laser aerovane, and a yaw angle and/or a pitch angle of the wind power generator is predicted and controlled based on the observation results. Thus, high-efficiency control of the wind power generation system, including the wind power generator, is achieved. An output-smoothing device connected to the wind power generator predicts and controls electric power input/output of the output-smoothing device based on a predicted power output of the wind power generator and smoothes the power output of the wind power generation system.
摘要翻译：能够以平滑的输出功率高效率地输出发电的风力发电系统包括安装在风力发电机上或者位于风力发电机附近的风力发电机和激光飞行器。使用激光飞行器观察向风力发电机吹风的方向和速度，并且基于观察结果预测和控制风力发电机的偏航角和/或俯仰角。因此，实现了包括风力发电机在内的风力发电系统的高效率控制。连接到风力发电机的输出平滑装置基于风力发电机的预测功率输出来预测和控制输出平滑装置的电力输入/输出，并平滑风力发电系统的功率输出。

37. 发明申请

US20050083981A1 Surface-emitting type semiconductor laser and method for manufacturing the same 有权
标题翻译：表面发射型半导体激光器及其制造方法
公开(公告)号：US20050083981A1
公开(公告)日：2005-04-21
申请号：US10934450
申请日：2004-09-07
申请人： Tsuyoshi Kaneko , Tsugio Ide , Hitoshi Nakayama
发明人： Tsuyoshi Kaneko , Tsugio Ide , Hitoshi Nakayama
IPC分类号： H01S5/183 , H01S5/00 , H01S5/042 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/18313 , H01S5/18316 , H01S5/18333 , H01S5/18338 , H01S5/18341 , H01S5/18347 , H01S5/18355 , H01S5/3432 , H01S2301/18
摘要： A reliable surface-emitting type semiconductor laser and a method for manufacturing the same, is capable of controlling polarization planes of laser light without lowering the energy usage efficiency. The surface-emitting type semiconductor laser has a first mirror, an active layer and a second mirror formed above a substrate, a first columnar section formed adjacent to the active layer and including a dielectric layer defining an opening section and a second columnar section formed above the first columnar section. A planar configuration of the second columnar section has anisotropy.
摘要翻译：可靠的表面发射型半导体激光器及其制造方法能够在不降低能量使用效率的情况下控制激光的偏振面。表面发射型半导体激光器具有形成在基板上方的第一反射镜，有源层和第二反射镜，邻近有源层形成的第一柱状部分，并且包括限定开口部分的介电层和形成在上面的第二柱状部分第一个柱状部分。第二柱状部分的平面构型具有各向异性。

38. 发明申请

US20050045653A1 Method of and apparatus for applying liquid material 有权
标题翻译：液体材料的应用方法和设备
公开(公告)号：US20050045653A1
公开(公告)日：2005-03-03
申请号：US10921869
申请日：2004-08-20
申请人： Koji Tanaka , Hitoshi Nakayama , Shinji Atsuzawa , Youichi Andoh
发明人： Koji Tanaka , Hitoshi Nakayama , Shinji Atsuzawa , Youichi Andoh
IPC分类号： B05D1/26 , B05B15/68 , B05C5/00 , B05C11/00 , B05D1/02 , B05D3/00 , G01F11/00
CPC分类号： B05B15/68
摘要： Disclosed is a method, in which when a liquid material is applied to the application surface of an object of application by using a liquid material supply device having a syringe containing the liquid material and equipped with a needle having at its distal end an ejection hole from which the liquid material is ejected, an image of the distal end of the needle is taken laterally by a horizontal camera together with a height reference mark when an ascent/descent drive system of the liquid material supply device is set to a reference height, and the height position of the distal end of the needle is obtained from the difference between the height of the distal end of the needle and the height of the height reference mark.
摘要翻译：公开了一种方法，其中当通过使用具有含有液体材料的注射器的液体材料供应装置将液体材料施加到施加物体的施加表面上并且配备有在其远端具有喷射孔的喷射孔时，当液体材料供给装置的上升/下降驱动系统被设定为参考高度时，液体材料被喷射的情况下，水平摄像机的横向摄像机与高度参考标记一起被拍摄针的远端的图像，以及针的远端的高度位置是根据针的远端的高度与高度参考标记的高度之间的差来获得的。

39. 发明授权

US5763439A Pyridazinone derivatives or their salts, processes for their production, and anti-shock agents containing them 失效
标题翻译：哒嗪酮衍生物或其盐，其制备方法和含有它们的抗休克剂
公开(公告)号：US5763439A
公开(公告)日：1998-06-09
申请号：US602799
申请日：1996-03-04
申请人： Itaru Shigehara , Shinji Odawara , Hiroshi Okada , Hirohiko Kimura , Masato Omatsu , Hitoshi Nakayama , Rie Higuchi , Taki Takenami
发明人： Itaru Shigehara , Shinji Odawara , Hiroshi Okada , Hirohiko Kimura , Masato Omatsu , Hitoshi Nakayama , Rie Higuchi , Taki Takenami
IPC分类号： C07D237/14 , C07D237/24 , C07D401/12 , C07D405/14 , C07D417/12 , A61K31/50 , C07D237/22
CPC分类号： C07D401/12 , C07D237/14 , C07D237/24 , C07D405/14 , C07D417/12
摘要： A pyridazinone derivative of the formula (I) or a pharmaceutically acceptable salt thereof: ##STR1## wherein Q, A, and R.sup.1 -R.sup.4 are as defined herein, useful as an anti-shock agent.
摘要翻译： PCT No.PCT / JP94 / 01380 Sec。 371日期：1996年3月4日 102（e）1996年3月4日PCT PCT 1994年8月22日PCT公布。出版物WO95 / 07264 日期：1995年3月16日一种式（I）的哒嗪酮衍生物或其药学上可接受的盐：其中Q，A和R 1 -R 4如本文所定义，可用作抗休克剂。

40. 发明授权

US4851590A Method of purifying 2,4-xylenol 失效
标题翻译：纯化2,4-二甲苯酚的方法
公开(公告)号：US4851590A
公开(公告)日：1989-07-25
申请号：US199750
申请日：1988-05-27
申请人： Tohru Miura , Katsuju Watanabe , Hitoshi Nakayama , Masayuki Furuya , Teruyuki Nagata
发明人： Tohru Miura , Katsuju Watanabe , Hitoshi Nakayama , Masayuki Furuya , Teruyuki Nagata
IPC分类号： C07C37/86
CPC分类号： C07C37/86
摘要： 2,4-Xylenol can be obtained in high yield and high purity from a crude 2,4-xylenol isomer mixture containing 2,5-xylenol by selectively reacting the 2,5-xylenol with an aldehyde in the presence of an aromatic sulfonic acid, thereby converting the 2,5-xylenol into a xylenol-aldehyde condensate and, subsequently, separating the 2,4-xylenol, e.g., by distillation.

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