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31. 发明授权

US06445438B1 Liquid crystal display device and method for fabricating the same 失效
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US06445438B1
公开(公告)日：2002-09-03
申请号：US09237008
申请日：1999-01-26
申请人： Wataru Horie , Takayoshi Nagayasu , Toshio Fujii
发明人： Wataru Horie , Takayoshi Nagayasu , Toshio Fujii
IPC分类号： G02F113
CPC分类号： G02F1/133377
摘要： The liquid crystal display device of this invention includes a first substrate, a second substrate opposing the first substrate, and a liquid crystal layer sandwiched between the first and the second substrates, wherein the liquid crystal layer includes a polymer region and a liquid crystal domain surrounded by the polymer region in which liquid crystal molecules are oriented in an axial symmetrical manner, the first substrate includes a dry film having a concave portion on a surface facing the liquid crystal layer, and a symmetric axis in the liquid crystal domain substantially extends through the concave portion and is substantially perpendicular to the first substrate.
摘要翻译：本发明的液晶显示装置包括第一基板，与第一基板相对的第二基板和夹在第一和第二基板之间的液晶层，其中液晶层包括聚合物区域和液晶畴包围通过其中液晶分子以轴对称方式取向的聚合物区域，第一基板包括在面向液晶层的表面上具有凹部的干膜，并且液晶畴中的对称轴基本上延伸穿过并且基本上垂直于第一基板。

32. 发明授权

US5686173A Biaxially stretched film for packaging 失效
标题翻译：双轴拉伸膜包装
公开(公告)号：US5686173A
公开(公告)日：1997-11-11
申请号：US527249
申请日：1995-09-12
申请人： Toshio Fujii , Kazuhiro Kato , Toyomitsu Kondo , Sinji Kawasaki
发明人： Toshio Fujii , Kazuhiro Kato , Toyomitsu Kondo , Sinji Kawasaki
IPC分类号： B32B27/08 , B65D65/40 , B32B27/34 , B32B27/32
CPC分类号： B32B27/08 , Y10T428/2495 , Y10T428/31743 , Y10T428/31746 , Y10T428/3175 , Y10T428/31757 , Y10T428/31909 , Y10T428/31913 , Y10T428/31928
摘要： A biaxially stretched film for packaging, having a thickness of not more than 40 .mu.m; comprising surface layers each made of a propylene-ethylene copolymer resin and an intermediate layer disposed therebetween made of a polyamide resin comprising an aromatic polyamide resin, and having thickness of 10 to 80% of the overall thickness of the biaxially stretched film; and obtained by a process comprising a coextrusion step, a rapid cooling step, and a stretching step.
摘要翻译：用于包装的双轴拉伸膜，厚度不大于40μm; 包括各自由丙烯 - 乙烯共聚物树脂制成的表面层和设置在其间的由包含芳族聚酰胺树脂的聚酰胺树脂制成的中间层，其厚度为双轴向拉伸膜的总厚度的10至80％并通过包括共挤出步骤，快速冷却步骤和拉伸步骤的方法获得。

33. 发明授权

US5284783A Method of fabricating a heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管的制造方法
公开(公告)号：US5284783A
公开(公告)日：1994-02-08
申请号：US724935
申请日：1991-07-02
申请人： Hideaki Ishikawa , Toshio Fujii , Eizo Miyauchi
发明人： Hideaki Ishikawa , Toshio Fujii , Eizo Miyauchi
IPC分类号： H01L21/22 , H01L21/331 , H01L21/265
CPC分类号： H01L29/66318 , H01L21/22 , Y10S438/936
摘要： A method of fabricating a semiconductor device having an epitaxial layer of a group III-V semiconductor material provided on an underlying crystal layer with a lattice matching therewith, the semiconductor material being doped to the p-type by addition of beryllium and selected from a group including gallium aluminum arsenide and indium gallium aluminum arsenide, in which the method comprises steps of growing the epitaxial layer on the underlying crystal layer, adding beryllium to a concentration level of about 5.times.10.sup.19 atoms/cm.sup.3 to about 5.times.10.sup.20 atoms/cm.sup.3 to the semiconductor material, and adding indium by an amount of about 0.5 mole percent to about 8 mole percent with respect to group III elements in the semiconductor material.
摘要翻译：一种制造半导体器件的方法，该半导体器件具有设置在与晶格匹配的基底晶体层上的III-V族半导体材料的外延层，该半导体材料通过添加铍而掺杂成p型，并且选自包括砷化镓铝和砷化铟镓砷，其中该方法包括在下面的晶体层上生长外延层的步骤，将铍添加到约5×1019原子/厘米3至约5×1020原子/厘米3的浓度至半导体材料，并且相对于半导体材料中的III族元素，将铟添加量为约0.5摩尔％至约8摩尔％。

34. 发明授权

US4799088A High electron mobility single heterojunction semiconductor devices and methods for production thereof 失效
标题翻译：高电子迁移率单异质结半导体器件及其制造方法
公开(公告)号：US4799088A
公开(公告)日：1989-01-17
申请号：US286863
申请日：1981-07-27
申请人： Satoshi Hiyamizu , Toshio Fujii
发明人： Satoshi Hiyamizu , Toshio Fujii
IPC分类号： H01L21/203 , H01L29/778
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L29/7783
摘要： A high electron mobility single heterojunction semiconductor devices having a layer configuration comprising a N-type AlGaAs layer grown on an undoped GaAs layer grown on an undoped AlGaAs layer grown on a semiconductor substrate containing an impurity producing a deep level. The undoped AlGaAs layer has at least three functions including (a) a getter for the deep level impurity which may be diffused from the substrate during an annealing process, (b) a buffer improving the crystal condition of the undoped GaAs layer, and (c) a test layer grown for the purpose of predetermining the intensity of molecular or ion beams for each of Al, Ga, As and dopants e.g. Si. This allows annealing processes and ion implantation processes to be introduced to the method for production of this type of semiconductor devices without reducing the electron mobility thereof.
摘要翻译：一种高电子迁移率单异质结半导体器件，其具有包括生长在含有产生深度杂质的杂质的半导体衬底上生长的未掺杂的AlGaAs层上的未掺杂的GaAs层上生长的N型AlGaAs层的层状结构。未掺杂的AlGaAs层具有至少三种功能，包括（a）在退火过程中可能从衬底扩散的深层杂质的吸气剂，（b）改善未掺杂的GaAs层的晶体状态的缓冲液，和（c ）生长的测试层，用于预先确定Al，Ga，As和掺杂剂中的每一个的分子或离子束的强度，例如 Si。这允许将退火工艺和离子注入工艺引入到生产这种类型的半导体器件的方法中，而不降低其电子迁移率。

35. 发明申请

US20140290255A1 HOLLOW CURVED PLATE, MANUFACTURING METHOD OF THE SAME AND COMBUSTOR OF GAS TURBINE 审中-公开
标题翻译：中空弯曲板，其制造方法和气体涡轮机
公开(公告)号：US20140290255A1
公开(公告)日：2014-10-02
申请号：US14009004
申请日：2012-05-18
申请人： Koichi Akagi , Katsuyoshi Omae , Kunihiro Ohashi , Toshio Fujii , Junya Michinishi , Fumiko Machida
发明人： Koichi Akagi , Katsuyoshi Omae , Kunihiro Ohashi , Toshio Fujii , Junya Michinishi , Fumiko Machida
IPC分类号： F02C7/00
CPC分类号： F02C7/00 , B21D5/06 , B21D53/92 , B23K20/02 , B23K2101/001 , F01D11/08 , F05D2230/236 , F05D2250/291 , F05D2250/71 , F05D2260/20 , F23R3/002 , F23R3/005 , F23R3/06 , F23R2900/00012 , F23R2900/00018 , F23R2900/03042 , F23R2900/03044 , Y10T29/49229
摘要： Hollow curved plates (20, 50, 70) include first plate members 241-243 having a first groove 22 and second plate members 341-343 having a second groove 32 of approximately the same width as the first groove 22, the second plate members 341-343 being bonded to the first plate members 241-243 by diffusion bonding. The hollow curved plate is formed of the first plate members 241-243 and the second plate members 341-343 curved by bending in a state where the first plate members 241-243 and the second plate members 341-343 are bonded together. The first groove 22 faces the second groove 32, a position of the first groove 22 substantially coincides with a position of the second groove 32 in a width direction, and hollow parts 401-403 are formed by the first groove 22 and the second groove 32.
摘要翻译：中空弯曲板（20,50,70）包括具有第一槽22的第一板构件241-243和具有与第一槽22大致相同宽度的第二槽32的第二板构件341-343，第二板构件341 -343通过扩散接合结合到第一板构件241-243。中空弯曲板由第一板构件241-243和第二板构件341-343形成，第一板构件241-243和第二板构件341-343在第一板构件241-243和第二板构件341-343接合在一起的状态下通过弯曲弯曲。第一槽22面对第二槽32，第一槽22的位置与宽度方向上的第二槽32的位置基本一致，中空部401-403由第一槽22和第二槽32形成。

36. 发明申请

US20120188480A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20120188480A1
公开(公告)日：2012-07-26
申请号：US13497369
申请日：2010-09-27
申请人： Toshio Fujii
发明人： Toshio Fujii
IPC分类号： G02F1/13357
CPC分类号： G02B5/201 , G02F1/133514 , G02F2201/52
摘要： A liquid crystal display device (100) according to the present invention has a pixel (P), which includes red, green, blue and yellow subpixels (R, G, B and Y). The chromaticity of the yellow subpixel (Y) is outside of a triangle that is defined by connecting together the respective chromaticities of the red, green and blue subpixels (R, G and B). And the respective aperture areas SR, SG, SB and SY of the red, green, blue, and yellow subpixels (R, G, B and Y) and the respective transmittances TR, TG, TB and TY of their associated red, green, blue, and yellow color filters (CR, CG, CB and CY) satisfy the inequality TY>[(SR+SG+SB+SY)(TR+TG+TB)−3(SR×TR+SG×TG+SB×TB)]/3SY.
摘要翻译：根据本发明的液晶显示装置（100）具有包括红色，绿色，蓝色和黄色子像素（R，G，B和Y）的像素（P）。黄色子像素（Y）的色度在通过将红色，绿色和蓝色子像素（R，G和B）的各个色度连接在一起而限定的三角形之外。以及红色，绿色，蓝色和黄色子像素（R，G，B和Y）的各个孔径区域SR，SG，SB和SY以及它们相关联的红色，绿色，绿色子像素的相应透射率TR，TG，TB和TY，蓝色和黄色滤色器（CR，CG，CB和CY）满足不等式TY> [（SR + SG + SB + SY）（TR + TG + TB）-3（SR×TR + SG×TG + SB× TB）] / 3SY。

37. 发明授权

US06787239B2 Electrode material, dielectric material and plasma display panel using them 失效
标题翻译：电极材料，介电材料和等离子体显示面板使用它们
公开(公告)号：US06787239B2
公开(公告)日：2004-09-07
申请号：US10306650
申请日：2002-11-27
申请人： Toshio Fujii , Tatsuo Mifune
发明人： Toshio Fujii , Tatsuo Mifune
IPC分类号： H01B100
CPC分类号： H01J11/12 , C03C8/04 , C03C8/16 , C03C8/18 , H01J11/22 , H01J11/38 , H01J2211/225 , Y10T428/252
摘要： A material usable for the electrodes and the dielectric layer plasma display panels and capable of reducing the occurrence of yellowing and a high-image-quality plasma display panel using the material are provided. Using glass powder containing 25 to 50 wt % of Bi2O3, 5 to 35 wt % of B2O3, 10 to 20 wt % of ZnO, 5 to 20 wt % of BaO, 0 to 15 wt % of SiO2 and 0 to 10 wt % of Al2O3, the electrodes and the dielectric layer of a plasma display panel are formed.
摘要翻译：提供了可用于电极和电介质层等离子体显示面板并且能够减少发黄的材料和使用该材料的高图像质量等离子体显示面板的材料。使用含有25〜50重量％的Bi 2 O 3，5〜35重量％的B 2 O 3，10〜20重量％的ZnO，5〜20重量％的BaO，0〜15重量％的SiO 2和0〜10重量％形成等离子体显示面板的电极和电介质层。

38. 发明授权

US06504222B1 Multi-quantum well infrared photo-detector 失效
标题翻译：多量子阱红外光电探测器
公开(公告)号：US06504222B1
公开(公告)日：2003-01-07
申请号：US09473156
申请日：1999-12-28
申请人： Yoshihiro Miyamoto , Hironori Nishino , Yusuke Matsukura , Toshio Fujii
发明人： Yoshihiro Miyamoto , Hironori Nishino , Yusuke Matsukura , Toshio Fujii
IPC分类号： H01L3100
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/101
摘要： A multi-quantum well infrared photo-detector, in which a plurality of multi-quantum well layers having respective sensitivities for different wavelength ranges of infrared are layered via a common contact layer. The infrared photo-detector includes a switch where one end is connected to the above common contact layer, and a current integration unit which is connected to the other end of the above switch. First and second voltages are applied to first and second contact layers at the opposite side of first and second multi-quantum well layer respectively. The above switch is conducted for a predetermined time so that either voltage between the above common contact layer and the first contact layer or voltage between the above common contact layer and the second contact layer becomes higher than the other, and the above current integration unit is charged or discharged by the current which flows in the above multi-quantum well layers.
摘要翻译：一种多量子阱红外光电检测器，其中通过公共接触层层叠具有用于红外线的不同波长范围的各自灵敏度的多个多量子阱层。红外光检测器包括一端连接到上述公共接触层的开关，以及连接到上述开关的另一端的电流积分单元。第一和第二电压分别施加到第一和第二多量子阱层的相反侧的第一和第二接触层。上述开关进行预定时间，使得上述公共接触层和第一接触层之间的电压或上述公共接触层和第二接触层之间的电压变得高于另一个，并且上述电流积分单元是由在上述多量子阱层中流动的电流充电或放电。

39. 发明授权

US5728412A Alcohol acetyltransferase genes and use thereof 失效
标题翻译：醇乙酰转移酶基因及其用途
公开(公告)号：US5728412A
公开(公告)日：1998-03-17
申请号：US465334
申请日：1995-06-05
申请人： Toshio Fujii , Akihiro Iwamatsu , Hiroyuki Yoshimoto , Toshitaka Minetoki , Takayuki Bogaki , Naoshi Nagasawa
发明人： Toshio Fujii , Akihiro Iwamatsu , Hiroyuki Yoshimoto , Toshitaka Minetoki , Takayuki Bogaki , Naoshi Nagasawa
IPC分类号： C12G1/02 , C12C11/00 , C12C11/02 , C12G1/022 , C12G3/02 , C12N1/19 , C12N9/10 , C12N15/09 , C12N15/54 , C12R1/865 , A23L1/10 , A23L1/28 , C07H21/04 , C12N1/00 , C12N1/18 , C12N15/63
CPC分类号： C12C5/004 , C12C11/00 , C12C11/003 , C12C11/02 , C12C12/004 , C12C12/006 , C12C5/026 , C12G1/0203 , C12N9/1029
摘要： This invention disclosed herein provides an alcohol acetyl transferase ("AATase"), an AATase encoding gene and a yeast having an improved ester producing ability due to transformation with the AATase encoding gene, This invention also provides a process for producing an alcoholic beverage having an enriched ester flavor using the transformed yeast.
摘要翻译：本发明公开了一种醇乙酰转移酶（“AATase”），AATase编码基因和由于用AATase编码基因转化而具有改进的酯生产能力的酵母。本发明还提供一种生产具有使用转化的酵母富集酯味。

40. 发明授权

US5686284A Alcohol acetyltransferase genes and use thereof 失效
公开(公告)号：US5686284A
公开(公告)日：1997-11-11
申请号：US461621
申请日：1995-06-05
申请人： Toshio Fujii , Akihiro Iwamatsu , Hiroyuki Yoshimoto , Toshitaka Minetoki , Takayuki Bogaki , Naoshi Nagasawa
发明人： Toshio Fujii , Akihiro Iwamatsu , Hiroyuki Yoshimoto , Toshitaka Minetoki , Takayuki Bogaki , Naoshi Nagasawa
IPC分类号： C12G1/02 , C12C11/00 , C12C11/02 , C12G1/022 , C12G3/02 , C12N1/19 , C12N9/10 , C12N15/09 , C12N15/54 , C12R1/865 , C07H21/04 , C12N9/00
CPC分类号： C12C5/004 , C12C11/00 , C12C11/003 , C12C11/02 , C12C12/004 , C12C12/006 , C12C5/026 , C12G1/0203 , C12N9/1029
摘要： This invention disclosed herein provides an alcohol acetyl transferase ("AATase"), an AATase encoding gene and a yeast having an improved ester producing ability due to transformation with the AATase encoding gene. This invention also provides a process for producing an alcoholic beverage having an enriched ester flavor using the transformed yeast.

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