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    • 33. 发明授权
    • Image sensor having supplemental capacitive coupling node
    • 具有补充电容耦合节点的图像传感器
    • US08294077B2
    • 2012-10-23
    • US12972188
    • 2010-12-17
    • Duli MaoHsin-Chih TaiVincent VeneziaHoward E. RhodesSohei Manabe
    • Duli MaoHsin-Chih TaiVincent VeneziaHoward E. RhodesSohei Manabe
    • H01L27/146
    • H04N5/35509H04N5/3559H04N5/3597H04N5/37452H04N5/376
    • An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.
    • 图像传感器包括像素阵列,位线,补充电容节点线和补充电容电路。 像素阵列包括多个像素单元,每个像素单元包括浮动扩散(FD)节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到第二组像素单元的FD节点,以响应于控制信号选择性地将辅助电容耦合到第二组的FD节点。 在各种实施例中,第一和第二组像素单元可以是相同的组或像素单元的不同组,并且可以添加电容性升压特征或多转换增益特征。
    • 38. 发明授权
    • Resonator for thermo optic device
    • 热光器件谐振器
    • US08195020B2
    • 2012-06-05
    • US11951796
    • 2007-12-06
    • Gurtej Singh SandhuGuy T. BlalockHoward E. Rhodes
    • Gurtej Singh SandhuGuy T. BlalockHoward E. Rhodes
    • G02B6/10G02B6/26G02B6/34G02B6/42H01L21/00
    • G02B6/132G02B6/12004G02B6/12007G02B6/136G02F1/011G02F1/0147G02F2203/15
    • A resonator for thermo optic devices is formed in the same process steps as a waveguide and is formed in a depression of a lower cladding while the waveguide is formed on a surface of the lower cladding. Since upper surfaces of the resonator and waveguide are substantially coplanar, the aspect ratio, as between the waveguide and resonator in an area where the waveguide and resonator front one another, decreases thereby increasing the bandwidth of the resonator. The depression is formed by photomasking and etching the lower cladding before forming the resonator and waveguide. Pluralities of resonators are also taught that are formed in a plurality of depressions of the lower cladding. To decrease resonator bandwidth, waveguide(s) are formed in the depression(s) of the lower cladding while the resonator is formed on the surface. Thermo optic devices formed with these resonators are also taught.
    • 用于热光器件的谐振器以与波导相同的工艺步骤形成,并且形成在下包层的凹陷中,同时波导形成在下包层的表面上。 由于谐振器和波导的上表面基本上是共面的,因此在波导和谐振器彼此前向的区域中的波导和谐振器之间的纵横比减小,从而增加了谐振器的带宽。 在形成谐振器和波导之前,通过光掩模和蚀刻下部包层形成凹陷。 还教导了形成在下部包层的多个凹部中的多个谐振器。 为了减小谐振器带宽,当在表面上形成谐振器时,在下包层的凹陷中形成波导。 还教导了用这些谐振器形成的热光器件。
    • 40. 发明授权
    • Method of forming barrier regions for image sensors
    • 形成图像传感器的屏障区域的方法
    • US08105864B2
    • 2012-01-31
    • US11600891
    • 2006-11-17
    • Howard E. RhodesRichard A. MauritzsonWilliam T. Quinlin
    • Howard E. RhodesRichard A. MauritzsonWilliam T. Quinlin
    • H01L21/00
    • H01L27/14603H01L27/14607H01L27/14609H01L27/1463H01L27/14645H01L27/14654H01L27/14689
    • Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comprises a first pixel cell having a first configuration, a second pixel cell having a second configuration, and at least one barrier region formed between the first and second pixel cells for capturing and removing charge. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.
    • 本发明的实施例提供了一种图像传感器,其包括用于隔离装置的阻挡区域。 图像传感器包括衬底和形成在衬底上的像素单元的阵列。 每个像素单元包括光转换装置。 该阵列包括具有第一配置的第一像素单元,具有第二配置的第二像素单元,以及形成在第一和第二像素单元之间用于捕获和去除电荷的至少一个势垒区域。 阻挡区域包括在电连接到电压源端子的基板中的特定导电类型的电荷累积区域。 电荷累积区域累积电荷并防止从阻挡区域一侧上的像素单元或外围电路到屏障区域另一侧上的像素单元的电荷转移。