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1. 发明授权

US08101978B2 Circuit and photo sensor overlap for backside illumination image sensor 有权
标题翻译：背面照明图像传感器的电路和光电传感器重叠
公开(公告)号：US08101978B2
公开(公告)日：2012-01-24
申请号：US12053476
申请日：2008-03-21
申请人： Tiejun Dai , Hsin-Chih Tai , Sohei Manabe , Hidetoshi Nozaki , Howard E. Rhodes
发明人： Tiejun Dai , Hsin-Chih Tai , Sohei Manabe , Hidetoshi Nozaki , Howard E. Rhodes
IPC分类号： H01L27/148 , H01L29/768 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14627 , H01L27/1464 , H01L27/14641
摘要： A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.
摘要翻译：背面照明（“BSI”）成像传感器像素包括光电二极管区域和像素电路。光电二极管区域设置在半导体管芯内，用于响应于入射到BSI成像传感器像素的背面的光积累图像电荷。像素电路包括设置在半导体管芯内的半导体管芯的前侧和光电二极管区域之间的晶体管像素电路。像素电路的至少一部分与光电二极管区域重叠。

2. 发明授权

US08228411B2 Circuit and photo sensor overlap for backside illumination image sensor 有权
标题翻译：背面照明图像传感器的电路和光电传感器重叠
公开(公告)号：US08228411B2
公开(公告)日：2012-07-24
申请号：US13327592
申请日：2011-12-15
申请人： Tiejun Dai , Hsin-Chih Tai , Sohei Manabe , Hidetoshi Nozaki , Howard E. Rhodes
发明人： Tiejun Dai , Hsin-Chih Tai , Sohei Manabe , Hidetoshi Nozaki , Howard E. Rhodes
IPC分类号： H04N3/14 , H04N5/335 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14627 , H01L27/1464 , H01L27/14641
摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.
摘要翻译：背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。响应于入射在第一像素的背面的光产生图像信号。由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给第一像素以适应比装配在第一像素内的更大的像素电路。

3. 发明申请

US20120086844A1 CIRCUIT AND PHOTO SENSOR OVERLAP FOR BACKSIDE ILLUMINATION IMAGE SENSOR 有权
标题翻译：用于背光照明图像传感器的电路和照片传感器覆盖
公开(公告)号：US20120086844A1
公开(公告)日：2012-04-12
申请号：US13327592
申请日：2011-12-15
申请人： Tiejun Dai , Hsin-Chih Tai , Sohei Manabe , Hidetoshi Nozaki , Howard E. Rhodes
发明人： Tiejun Dai , Hsin-Chih Tai , Sohei Manabe , Hidetoshi Nozaki , Howard E. Rhodes
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/14627 , H01L27/1464 , H01L27/14641
摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.
摘要翻译：背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。响应于入射在第一像素的背面的光产生图像信号。由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给第一像素以适应比装配在第一像素内的更大的像素电路。

4. 发明申请

US20090200624A1 Circuit and photo sensor overlap for backside illumination image sensor 有权
标题翻译：背面照明图像传感器的电路和光电传感器重叠
公开(公告)号：US20090200624A1
公开(公告)日：2009-08-13
申请号：US12053476
申请日：2008-03-21
申请人： Tiejun Dai , Hsin-Chih Tai , Sohei Manabe , Hidetoshi Nozaki , Howard E. Rhodes
发明人： Tiejun Dai , Hsin-Chih Tai , Sohei Manabe , Hidetoshi Nozaki , Howard E. Rhodes
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14627 , H01L27/1464 , H01L27/14641
摘要： A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.
摘要翻译：背面照明（“BSI”）成像传感器像素包括光电二极管区域和像素电路。光电二极管区域设置在半导体管芯内，用于响应于入射到BSI成像传感器像素的背面的光积累图像电荷。像素电路包括设置在半导体管芯内的半导体管芯的前侧和光电二极管区域之间的晶体管像素电路。像素电路的至少一部分与光电二极管区域重叠。

5. 发明申请

US20090200590A1 IMAGE SENSOR WITH LOW ELECTRICAL CROSS-TALK 有权
标题翻译：具有低电压交叉口的图像传感器
公开(公告)号：US20090200590A1
公开(公告)日：2009-08-13
申请号：US12259143
申请日：2008-10-27
申请人： Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L31/103
摘要： An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.
摘要翻译：使用衬底形成像素阵列，其中每个像素具有背面的衬底和包括金属化层的前面，在衬底中形成的光电二极管，使用与感光区域相邻的前端处理形成的前侧P阱，以及形成在光电二极管下方的衬底中的N型区域。 N型区域形成在光电二极管下面的衬底的区域中，并且至少部分地形成在衬底的比前面P阱的深度更深的区域中。

6. 发明授权

US08357984B2 Image sensor with low electrical cross-talk 有权
标题翻译：图像传感器具有低电气串扰
公开(公告)号：US08357984B2
公开(公告)日：2013-01-22
申请号：US12259143
申请日：2008-10-27
申请人： Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L31/103
摘要： An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.
摘要翻译：使用衬底形成像素阵列，其中每个像素具有背面的衬底和包括金属化层的前面，在衬底中形成的光电二极管，使用与感光区域相邻的前端处理形成的前侧P阱，以及形成在光电二极管下方的衬底中的N型区域。 N型区域形成在光电二极管下面的衬底的区域中，并且至少部分地形成在衬底的比前面P阱的深度更深的区域中。

7. 发明申请

US20070018264A1 Optimized image sensor process and structure to improve blooming 审中-公开
标题翻译：优化图像传感器的工艺和结构，提高开花度
公开(公告)号：US20070018264A1
公开(公告)日：2007-01-25
申请号：US11210996
申请日：2005-08-24
申请人： Howard Rhodes , Hidetoshi Nozaki , Sohei Manabe , Hsin-chih Tai , Satyadev Nagaraja , Ashish Shah , William Qian , Hongli Yang , Tiejun Dai
发明人： Howard Rhodes , Hidetoshi Nozaki , Sohei Manabe , Hsin-chih Tai , Satyadev Nagaraja , Ashish Shah , William Qian , Hongli Yang , Tiejun Dai
IPC分类号： H01L31/0232
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/14654
摘要： An image sensor that has a pixel array using an isolation structure between pixels that reduce electrical cross-talk is disclosed. The pixel array is formed on a substrate that has a thin (less than 5 microns) epitaxial layer. The isolation structure uses a deep p-well to surround a shallow trench isolation. The deep p-well is formed using an implant energy of typically over 700 keV.
摘要翻译：公开了一种使用减少电串扰的像素之间的隔离结构的像素阵列的图像传感器。像素阵列形成在具有薄（小于5微米）外延层的衬底上。隔离结构使用深p阱来围绕浅沟槽隔离。使用典型地超过700keV的注入能量形成深p阱。

8. 发明申请

US20090267070A1 Multilayer image sensor structure for reducing crosstalk 有权
标题翻译：用于减少串扰的多层图像传感器结构
公开(公告)号：US20090267070A1
公开(公告)日：2009-10-29
申请号：US12109134
申请日：2008-04-24
申请人： Vincent Venezia , Hidetoshi Nozaki , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
发明人： Vincent Venezia , Hidetoshi Nozaki , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
IPC分类号： H01L31/0216
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/14632 , H01L31/035281
摘要： An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.
摘要翻译：图像传感器像素包括基板，外延层和光收集区域。衬底被掺杂以具有第一导电类型。外延层设置在衬底上并掺杂以具有与第一导电类型相反的第二导电类型。光收集区域设置在用于收集光生电荷载流子的外延层内。光收集区域也被掺杂以具有第一导电类型。

9. 发明授权

US07948018B2 Multilayer image sensor structure for reducing crosstalk 有权
标题翻译：用于减少串扰的多层图像传感器结构
公开(公告)号：US07948018B2
公开(公告)日：2011-05-24
申请号：US12109134
申请日：2008-04-24
申请人： Vincent Venezia , Hidetoshi Nozaki , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
发明人： Vincent Venezia , Hidetoshi Nozaki , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
IPC分类号： H01L31/062
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/14632 , H01L31/035281
摘要： An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.
摘要翻译：图像传感器像素包括基板，外延层和光收集区域。衬底被掺杂以具有第一导电类型。外延层设置在衬底上并掺杂以具有与第一导电类型相反的第二导电类型。光收集区域设置在用于收集光生电荷载流子的外延层内。光收集区域也被掺杂以具有第一导电类型。

10. 发明申请

US20090200580A1 Image sensor and pixel including a deep photodetector 审中-公开
标题翻译：图像传感器和像素包括深度光电探测器
公开(公告)号：US20090200580A1
公开(公告)日：2009-08-13
申请号：US12028679
申请日：2008-02-08
申请人： Howard E. Rhodes , Hidetoshi Nozaki , Sohei Manabe
发明人： Howard E. Rhodes , Hidetoshi Nozaki , Sohei Manabe
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1464 , H01L27/14689
摘要： What is disclosed is an apparatus comprising a transfer gate formed on a substrate and a photodiode formed in the substrate next to the transfer gate. The photodiode comprises a shallow N-type collector formed in the substrate, a deep N-type collector formed in the substrate, wherein a lateral side of the deep N-type collector extends at least under the transfer gate, and a connecting N-type collector formed in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. Also disclosed is a process comprising forming a deep N-type collector in the substrate, forming a shallow N-type collector formed in the substrate, and forming a connecting N-type collector in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. A transfer gate is formed on the substrate next to the deep photodiode, wherein a lateral side of the deep N-type collector extends at least under the transfer gate. Other embodiments are disclosed and claimed.
摘要翻译：所公开的是一种装置，其包括形成在基板上的转移栅极和形成在基板旁边的光电二极管。光电二极管包括形成在基板中的浅N型集电体，形成在基板中的深N型集电体，其中深N型集电极的侧面至少在传输栅极下延伸，并且连接N型在深N型集电体和浅N型集电体之间的基板中形成的集电体，其中连接注入物连接深N型集电极和浅N型集电极。还公开了一种方法，包括在衬底中形成深N型集电体，形成在衬底中形成的浅N型集电体，并且在深N型集电极和浅层之间的衬底中形成连接的N型集电体 N型集电器，其中连接注入件连接深N型集电器和浅N型集电器。在靠近深度光电二极管的衬底上形成传输栅极，其中深N型集电极的侧面至少在传输栅极下方延伸。公开和要求保护其他实施例。

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