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31. 发明申请

US20090107851A1 Electrolytic polishing method of substrate 审中-公开
标题翻译：基底电解抛光方法
公开(公告)号：US20090107851A1
公开(公告)日：2009-04-30
申请号：US12285615
申请日：2008-10-09
申请人： Akira Kodera , Xinming Wang , Itsuki Kobata , Yasushi Toma
发明人： Akira Kodera , Xinming Wang , Itsuki Kobata , Yasushi Toma
IPC分类号： H01L21/3063 , H01L21/67
CPC分类号： H01L21/32125 , B23H5/08 , C25F3/30
摘要： An electrolytic polishing method of a substrate having a barrier film and an interconnect metal layer on a surface to be processed under the presence of an electrolytic solution, including a barrier film electrolytic polishing process which removes the barrier film by applying a voltage between a cathode and an anode, with the surface to be processed serving as the cathode, and causing relative motion between the surface to be processed and a polishing pad which faces and makes contact with the surface to be processed.
摘要翻译：一种在电解液存在下在待加工表面上具有阻挡膜和互连金属层的基板的电解抛光方法，该方法包括：通过在阴极与阴极之间施加电压来除去阻挡膜的阻挡膜电解抛光工艺; 阳极，待处理的表面用作阴极，并且引起待处理表面与抛光垫之间的相对运动，所述抛光垫面向并与待处理表面接触。

32. 发明申请

US20090095637A1 Electrochemical polishing method and polishing method 审中-公开
标题翻译：电化学抛光方法和抛光方法
公开(公告)号：US20090095637A1
公开(公告)日：2009-04-16
申请号：US12285549
申请日：2008-10-08
申请人： Yasushi Toma , Akira Kodera , Hirokuni Hiyama
发明人： Yasushi Toma , Akira Kodera , Hirokuni Hiyama
IPC分类号： C25F3/00
CPC分类号： B23H5/08 , H01L21/32125
摘要： The present invention provides an electrochemical polishing method capable of increasing a polishing speed while preventing excessive polishing, such as dishing or erosion. In the electrochemical polishing method, when a voltage applied to a conductive film formed on the surface of a substrate is increased at a contact surface pressure of 0 between the surface of the substrate and a polishing pad, a voltage at a first change point C that allows a current density to start to decrease after an increase is referred to as a minimum voltage. In addition, when the voltage is increased at a contact surface pressure having a finite value, a voltage at a second change point B that allows the current density to be maintained constant after the decrease is referred to as a maximum voltage. In this case, the surface of the conductive film is polished while maintaining the voltage to be not lower than the minimum voltage and not higher than the maximum voltage. Further, the present invention provides an electrochemical polishing method capable of rapidly removing a conductive film in regions other than a contact plug or wiring line forming region while preventing excessive polishing, such as dishing or erosion. In the electrochemical polishing method, in a step of increasing a voltage, when the voltage is increased at a contact surface pressure of 0, a voltage at a first change point C that allows a current density to start to decrease after an increase is referred to as a threshold voltage, and the voltage is increased such that a voltage in a region in which a barrier film is exposed is higher than the threshold voltage.
摘要翻译：本发明提供一种能够提高抛光速度同时防止过度抛光（如凹陷或侵蚀）的电化学抛光方法。在电化学抛光方法中，当在基板表面上形成的导电膜上施加的电压在基板的表面与抛光垫之间的接触面压力为0时增加时，在第一变化点C处的电压为允许电流密度在增加被称为最小电压之后开始降低。此外，当电压在具有有限值的接触表面压力下增加时，允许电流密度在减小之后保持恒定的第二变化点B处的电压被称为最大电压。在这种情况下，导电膜的表面被抛光，同时保持电压不低于最小电压并且不高于最大电压。此外，本发明提供一种电化学抛光方法，其能够在防止诸如凹陷或侵蚀之类的过度抛光的同时，在接触插塞或布线形成区域以外的区域中快速除去导电膜。在电化学抛光方法中，在增加电压的步骤中，当接触面压力为0时电压升高时，参照电流密度在增加后开始下降的第一变化点C处的电压作为阈值电压，并且增加电压，使得暴露阻挡膜的区域中的电压高于阈值电压。

33. 发明申请

US20050183963A1 Electrode for electrolytic processing 审中-公开
标题翻译：电解电解处理
公开(公告)号：US20050183963A1
公开(公告)日：2005-08-25
申请号：US11076067
申请日：2005-03-10
申请人： Yuzo Mori , Hidekazu Goto , Yasushi Toma
发明人： Yuzo Mori , Hidekazu Goto , Yasushi Toma
IPC分类号： B23H3/00 , C25C7/02 , C25D17/00 , C25D17/10 , C25F7/00
CPC分类号： B82Y30/00 , B23H3/00 , C25F7/00
摘要： An electrode for electrolytic processing has a conductive material and an organic compound having an ion exchange group. The organic compound is chemically bonded to a surface of the conductive material. The organic compound comprises thiol or disulfide. The ion exchange group comprises at least one of a sulfo group, a carboxyl group, a quaternary ammonium group, and an amino group. The conductive material includes at least one of gold, silver, platinum, copper, gallium arsenide, cadmium sulfide, and indium oxide (III).
摘要翻译：用于电解处理的电极具有导电材料和具有离子交换基团的有机化合物。有机化合物化学键合到导电材料的表面。有机化合物包括硫醇或二硫化物。离子交换基团包括磺基，羧基，季铵基和氨基中的至少一个。导电材料包括金，银，铂，铜，砷化镓，硫化镉和氧化铟（III）中的至少一种。

34. 发明授权

US5614663A Cantilever for use with atomic force microscope and process for the production thereof 失效
标题翻译：悬臂用于原子力显微镜及其制造方法
公开(公告)号：US5614663A
公开(公告)日：1997-03-25
申请号：US448790
申请日：1995-05-24
申请人： Junju Itoh , Yasushi Toma
发明人： Junju Itoh , Yasushi Toma
IPC分类号： G01Q70/10 , G01B5/28 , G01B7/34 , G01B21/30 , G01N27/00 , G01N37/00 , G01Q20/02 , G01Q60/38 , H01J37/28
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q60/40 , Y10S977/873
摘要： The improved cantilever for use with an atomic force microscope comprises a single-crystal silicon base 11 having adequate mechanical strength, a cantilever beam 12 that is made from a silicon oxide film and which is joined at one end to the base, and a conical stylus 13 with a sharp tip that is formed of single-crystal silicon on the cantilever beam 12 at the 6 other end which is opposite the end joined to the base 11, and all surfaces of the cantilever are covered with a thin electroconductive film 14. If desired, protective plates 15 for protecting the cantilever beam against mechanical damage may be provided that are processed from the base material in such a way that they hold the beam therebetween and which have satisfactory strength. The stylus has an abrupt profile with a sharp tip and a high aspect ratio, and the cantilever beam has an invariable spring constant and supports the stylus at an end. The cantilever can be produced by a process comprising steps (a)-(k).
摘要翻译：与原子力显微镜一起使用的改进的悬臂包括具有足够的机械强度的单晶硅基座11，由氧化硅膜制成并且在一端连接到基座的悬臂梁12和圆锥形的触针 13具有尖锐的尖端，其在悬臂梁12上的单晶硅形成在另一端的另一端，其与连接到基座11的端部相对，并且悬臂的所有表面都被薄的导电膜14覆盖。如果可以提供用于保护悬臂梁免受机械损坏的保护板15，其从基材加工成使得它们在其间保持梁并具有令人满意的强度。触针具有尖锐尖端和高纵横比的突然轮廓，并且悬臂梁具有恒定的弹簧常数并且在一端支撑触针。悬臂可以通过包括步骤（a） - （k）的方法制造。

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