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31. 发明授权

US07009205B2 Image display device using transistors each having a polycrystalline semiconductor layer 有权
标题翻译：使用具有多晶半导体层的晶体管的图像显示装置
公开(公告)号：US07009205B2
公开(公告)日：2006-03-07
申请号：US10337370
申请日：2003-01-07
申请人： Jun Gotoh , Katsutoshi Saito , Makoto Ohkura , Yukio Takasaki , Masanao Yamamoto
发明人： Jun Gotoh , Katsutoshi Saito , Makoto Ohkura , Yukio Takasaki , Masanao Yamamoto
IPC分类号： H01L29/04
CPC分类号： H01L29/66757 , H01L29/458
摘要： An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.
摘要翻译：一种使用晶体管的图像显示装置及其制造方法，所述晶体管具有构造为使得漏极和源极区域被完全激活的多晶半导体层。提供多晶半导体层，使得在LDD区域中容易控制杂质浓度。图像显示装置还在半导体层的上表面上具有栅电极的晶体管，其间具有绝缘膜，形成在栅电极的一侧上的漏极区域和形成在栅电极的另一侧上的源极区域。将激活的P型杂质添加到栅电极下方的区域，并且将活化的N型杂质添加到除栅电极下方的区域。

32. 发明授权

US09287587B2 Sealed battery cell and manufacturing method thereof 有权
标题翻译：密封电池及其制造方法
公开(公告)号：US09287587B2
公开(公告)日：2016-03-15
申请号：US13012528
申请日：2011-01-24
申请人： Katsunori Suzuki , Yukio Takasaki , Sho Matsumoto
发明人： Katsunori Suzuki , Yukio Takasaki , Sho Matsumoto
IPC分类号： H01M2/12 , H01M10/0587 , H01M10/052
CPC分类号： H01M10/0587 , H01M2/1241 , H01M2/1247 , H01M10/052 , Y02E60/122 , Y02P70/54 , Y02T10/7011 , Y10T29/4911
摘要： A sealed battery cell including an anti-explosion mechanism disposed between an electrode group and a top cover, and that deforms or cleaves due to elevation of internal pressure in the battery cell, the electrode group being comprised of a positive electrode and a negative electrode that are laminated together; wherein the anti-explosion mechanism includes a diaphragm, a connection plate welded to the diaphragm, and a connection lead welded to the connection plate; and the connection plate includes a thinner portion where a spot at which the connection lead is connected is formed as thin, and a thicker portion where the thinner portion is not formed, and a lower surface of the thinner portion is formed as coincident with a lower surface of the thicker portion, or as hollowed out from the lower surface of the thicker portion.
摘要翻译：一种密封的电池单元，包括设置在电极组和顶盖之间的防爆机构，并且由于电池单元内部压力升高而变形或断裂，所述电极组由正极和负极构成，层压在一起; 其中所述防爆机构包括隔膜，焊接到所述隔膜的连接板和焊接到所述连接板的连接引线; 并且连接板包括较薄部分，其中连接引线连接的点形成为较薄部分，较薄部分形成较薄部分，并且较薄部分的下表面形成为与较低部分重合较厚部分的表面，或从较厚部分的下表面挖出。

33. 发明申请

US20080272685A1 Dispay unit 审中-公开
标题翻译：分配单位
公开(公告)号：US20080272685A1
公开(公告)日：2008-11-06
申请号：US12081738
申请日：2008-04-21
申请人： Mitsuharu Ikeda , Toshiaki Kusunoki , Etsuko Nishimura , Tatsumi Hirano , Masatomo Terakado , Takahiro Ueno , Hiroyasu Yanase , Yukio Takasaki , Takaaki Ogasa , Hideyuki Shintani
发明人： Mitsuharu Ikeda , Toshiaki Kusunoki , Etsuko Nishimura , Tatsumi Hirano , Masatomo Terakado , Takahiro Ueno , Hiroyasu Yanase , Yukio Takasaki , Takaaki Ogasa , Hideyuki Shintani
IPC分类号： H01J1/54 , H05K1/09
CPC分类号： G02F1/136286 , G02F2001/13629
摘要： Hillock is prevented when aluminum wiring is used in order to reduce line resistance in a display unit. The aluminum wiring is formed into multi-layer structure and each layer contains an element which is not solidly solubilized with aluminum. The element are preferably rare earth metal such as Nd, high-melting point transition metals such as Ta and noble metals such as Pd. Intermetallic compounds of aluminum and the element are educed at an interface of the multi-layer wiring and it is prevented that grains of aluminum are enlarged to form hillock.
摘要翻译：为了减少显示单元中的线路电阻，使用铝接线时会阻止小丘。铝布线形成多层结构，每一层都含有不能用铝固溶的元素。该元素优选为稀土金属如Nd，高熔点过渡金属如Ta和贵金属如Pd。铝和元素的金属间化合物在多层布线的界面处被引出，并且防止铝的晶粒扩大以形成小丘。

34. 发明申请

US20070155140A1 Manufacturing method of semiconductor film and image display device 有权
公开(公告)号：US20070155140A1
公开(公告)日：2007-07-05
申请号：US11711623
申请日：2007-02-28
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

35. 发明申请

US20070001593A1 Image display device 审中-公开
标题翻译：图像显示装置
公开(公告)号：US20070001593A1
公开(公告)日：2007-01-04
申请号：US11472397
申请日：2006-06-22
申请人： Masakazu Sagawa , Hiroshi Kikuchi , Yukio Takasaki , Tomoki Nakamura , Toshiaki Kusunoki , Kazutaka Tsuji
发明人： Masakazu Sagawa , Hiroshi Kikuchi , Yukio Takasaki , Tomoki Nakamura , Toshiaki Kusunoki , Kazutaka Tsuji
IPC分类号： H01J1/62
CPC分类号： H01J1/72 , H01J9/02 , H01J29/04 , H01J31/127
摘要： The present invention provides an image display device, in which a top electrode is selectively separated by laser ablation for each scan line. As the laser, a third harmonic wave of YAG laser with a wavelength of 355 nm is used. By setting film thickness of the interlayer insulator 15 to 100 nm and film thickness of a field insulator 14 to 140 nm, reflective spectrum has the minimum value near a wavelength of 355 nm, This laser beam is projected from a top electrode 13 toward a substrate 10. A part of the projected laser beam 20 is reflected by the top electrode 13, but most of the laser beam pass through a field insulator 14 and the interlayer insulator 15 and is reflected by a bottom electrode 11. As the result of interference of these two reflection waves, the minimum value appears in reflection spectrum. In this case, the laser beam is mostly absorbed near boundary surface between the top electrode 13 and the interlayer insulator 15. The top electrode 13 is processed by ablation (melting and evaporation), and the top electrode 13 is separated at this portion. By utilizing interference phenomenon in this manner, no damage is given to the interlayer insulator 13, the field insulator 14, and the bottom electrode 11, which serve as underlying layers, and the top electrode 13 can be selectively cut off.
摘要翻译：本发明提供一种图像显示装置，其中通过每个扫描线的激光烧蚀选择性地分离顶部电极。作为激光器，使用波长为355nm的YAG激光器的三次谐波。通过将层间绝缘体15的膜厚设定为100nm，将场绝缘体14的膜厚设定为140nm，反射光的波长为355nm附近的最小值。该激光从顶部电极13朝向基板 10。投射的激光束20的一部分被顶部电极13反射，但大多数激光束通过场绝缘体14和层间绝缘体15并由底部电极11反射。作为这两个反射波的干扰的结果，最小值出现在反射光谱中。在这种情况下，激光束主要在顶部电极13和层间绝缘体15之间的边界面附近被吸收。顶部电极13通过消融（熔化和蒸发）进行处理，顶部电极13在该部分分离。通过以这种方式利用干涉现象，不会对作为下层的层间绝缘体13，场绝缘体14和底电极11以及顶电极13进行选择性地切断。

36. 发明申请

US20050051081A1 Process for producing polysilicon film 有权
标题翻译：多晶硅薄膜生产工艺
公开(公告)号：US20050051081A1
公开(公告)日：2005-03-10
申请号：US10942911
申请日：2004-09-17
申请人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
发明人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
IPC分类号： G02F1/1368 , C30B13/00 , H01L21/20 , H01L21/336 , H01L21/477 , H01L21/66 , H01L29/786 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/6675 , H01L29/78672
摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
摘要翻译：本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

37. 发明授权

US06806099B2 Process for producing polycrystalline silicon film by crystallizing on amorphous silicon film by light irradiation 有权
标题翻译：通过光照射在非晶硅膜上结晶生产多晶硅膜的方法
公开(公告)号：US06806099B2
公开(公告)日：2004-10-19
申请号：US10059203
申请日：2002-01-31
申请人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
发明人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
IPC分类号： G01R3126
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/6675 , H01L29/78672
摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
摘要翻译：本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置的硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

38. 发明授权

US5757356A Input data display device 失效
标题翻译：输入数据显示设备
公开(公告)号：US5757356A
公开(公告)日：1998-05-26
申请号：US654016
申请日：1996-05-28
申请人： Yukio Takasaki , Takashi Imamura
发明人： Yukio Takasaki , Takashi Imamura
IPC分类号： G05B11/01 , G05B19/10 , G05B23/02 , G05D23/19 , G06F3/023 , G06F3/033 , G06F3/048 , G09G5/36
CPC分类号： G06F3/0488 , G05B19/106 , G06F3/023 , G06F3/04847
摘要： An input data display device makes it easier to input properly correlated relative corrections for a number of parameters. Relative amounts by which each of a number of parameters is to be adjusted can be displayed on the screen in a manner which shows their ranges and possible correlation. The data are input when the operator touches spots which he selects on the display screen. The pressure of his finger causes data to be generated which represent those input positions. A calculation device calculates output-ready relative correction values for the various parameters based on these input position data. These values are transmitted to the connected device.
摘要翻译：输入数据显示装置使得对于多个参数更容易输入正确相关的相对校正。可以以显示其范围和可能的相关性的方式在屏幕上显示用于调整多个参数中的每一个的相对量。当操作员触摸他在显示屏上选择的点时，输入数据。他的手指的压力导致产生代表这些输入位置的数据。计算装置基于这些输入位置数据计算各种参数的输出就绪相对校正值。这些值被传输到连接的设备。

39. 发明授权

US5504813A Portable telephone 失效
标题翻译：便携式电话
公开(公告)号：US5504813A
公开(公告)日：1996-04-02
申请号：US500743
申请日：1995-07-11
申请人： Yukio Takasaki
发明人： Yukio Takasaki
IPC分类号： H04Q7/32 , H04M1/02 , H04M1/03 , H04M1/00
CPC分类号： H04M1/0216 , H04M1/03
摘要： A small-sized, lightweight portable telephone has a microphone mounted on a rotatable arm that can be released into a use position using only one hand, which is also grasping the telephone. Even if an excessive load is applied to the microphone arm, which is rotatably supported relative to the telephone main member, damage is prevented by a spring-loaded detent mechanism. The microphone arm has built in it a core member formed of a shape-memory alloy and constituted by a flexible casing, so that deformation can occur without permanent damage to the arm.
摘要翻译：一个小尺寸，轻便的便携式电话机具有安装在可旋转臂上的麦克风，该麦克风可以仅使用一只手来释放到使用位置，该手也抓住电话。即使对相对于电话主体可旋转地支撑的麦克风臂施加过大的负载，也可以通过弹簧加载的止动机构来防止损坏。麦克风臂内置有由形状记忆合金构成并由柔性壳体构成的芯构件，从而可以发生变形而不会对臂造成永久性损坏。

40. 发明申请

US20110183163A1 Sealed Battery Cell and Manufacturing Method Thereof 有权
标题翻译：密封电池及其制造方法
公开(公告)号：US20110183163A1
公开(公告)日：2011-07-28
申请号：US13012528
申请日：2011-01-24
申请人： Katsunori SUZUKI , Yukio Takasaki , Sho Matsumoto
发明人： Katsunori SUZUKI , Yukio Takasaki , Sho Matsumoto
IPC分类号： H01M2/12 , H01M10/04 , B23K26/20
CPC分类号： H01M10/0587 , H01M2/1241 , H01M2/1247 , H01M10/052 , Y02E60/122 , Y02P70/54 , Y02T10/7011 , Y10T29/4911
摘要： A sealed battery cell including an anti-explosion mechanism disposed between an electrode group and a top cover, and that deforms or cleaves due to elevation of internal pressure in the battery cell, the electrode group being comprised of a positive electrode and a negative electrode that are laminated together; wherein the anti-explosion mechanism includes a diaphragm, a connection plate welded to the diaphragm, and a connection lead welded to the connection plate; and the connection plate includes a thinner portion where a spot at which the connection lead is connected is formed as thin, and a thicker portion where the thinner portion is not formed, and a lower surface of the thinner portion is formed as coincident with a lower surface of the thicker portion, or as hollowed out from the lower surface of the thicker portion.
摘要翻译：一种密封的电池单元，包括设置在电极组和顶盖之间的防爆机构，并且由于电池单元内部压力升高而变形或断裂，所述电极组由正极和负极构成，层压在一起; 其中所述防爆机构包括隔膜，焊接到所述隔膜的连接板和焊接到所述连接板的连接引线; 并且连接板包括较薄部分，其中连接引线连接的点形成为较薄部分，较薄部分形成较薄部分，并且较薄部分的下表面形成为与较低部分重合较厚部分的表面，或从较厚部分的下表面挖出。

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