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    • 1. 发明申请
    • Image display device
    • 图像显示装置
    • US20070001593A1
    • 2007-01-04
    • US11472397
    • 2006-06-22
    • Masakazu SagawaHiroshi KikuchiYukio TakasakiTomoki NakamuraToshiaki KusunokiKazutaka Tsuji
    • Masakazu SagawaHiroshi KikuchiYukio TakasakiTomoki NakamuraToshiaki KusunokiKazutaka Tsuji
    • H01J1/62
    • H01J1/72H01J9/02H01J29/04H01J31/127
    • The present invention provides an image display device, in which a top electrode is selectively separated by laser ablation for each scan line. As the laser, a third harmonic wave of YAG laser with a wavelength of 355 nm is used. By setting film thickness of the interlayer insulator 15 to 100 nm and film thickness of a field insulator 14 to 140 nm, reflective spectrum has the minimum value near a wavelength of 355 nm, This laser beam is projected from a top electrode 13 toward a substrate 10. A part of the projected laser beam 20 is reflected by the top electrode 13, but most of the laser beam pass through a field insulator 14 and the interlayer insulator 15 and is reflected by a bottom electrode 11. As the result of interference of these two reflection waves, the minimum value appears in reflection spectrum. In this case, the laser beam is mostly absorbed near boundary surface between the top electrode 13 and the interlayer insulator 15. The top electrode 13 is processed by ablation (melting and evaporation), and the top electrode 13 is separated at this portion. By utilizing interference phenomenon in this manner, no damage is given to the interlayer insulator 13, the field insulator 14, and the bottom electrode 11, which serve as underlying layers, and the top electrode 13 can be selectively cut off.
    • 本发明提供一种图像显示装置,其中通过每个扫描线的激光烧蚀选择性地分离顶部电极。 作为激光器,使用波长为355nm的YAG激光器的三次谐波。 通过将层间绝缘体15的膜厚设定为100nm,将场绝缘体14的膜厚设定为140nm,反射光的波长为355nm附近的最小值。该激光从顶部电极13朝向基板 10。 投射的激光束20的一部分被顶部电极13反射,但大多数激光束通过场绝缘体14和层间绝缘体15并由底部电极11反射。 作为这两个反射波的干扰的结果,最小值出现在反射光谱中。 在这种情况下,激光束主要在顶部电极13和层间绝缘体15之间的边界面附近被吸收。 顶部电极13通过消融(熔化和蒸发)进行处理,顶部电极13在该部分分离。 通过以这种方式利用干涉现象,不会对作为下层的层间绝缘体13,场绝缘体14和底电极11以及顶电极13进行选择性地切断。
    • 4. 发明申请
    • Image display device
    • 图像显示装置
    • US20060202207A1
    • 2006-09-14
    • US11326519
    • 2006-01-06
    • Masakazu SagawaToshiaki KusunokiKazutaka TsujiMutsumi Suzuki
    • Masakazu SagawaToshiaki KusunokiKazutaka TsujiMutsumi Suzuki
    • H01L29/04
    • H01J31/127H01J29/04H01J29/481
    • The present invention provides an image display device, by which it is possible to prevent dielectric breakdown between a bottom electrode and a top electrode (top electrode bus line), which make up thin-film type electron sources, and which is free of display defect and has longer service life. On a cathode substrate 10, a bottom electrode 11, a tunneling insulator 12, and a top electrode 13 are prepared. On a lower layer of the top electrode 13, a top electrode bus line 16 is formed, and the top electrode 13 is reliably connected to the top electrode bus line 16 via a contact electrode 15. A field insulator 12A, a lower layer 14a of the interlayer insulator deposited by sputtering and an upper layer 14b of the interlayer insulator are laminated between the top electrode 13 and the contact electrode and the bottom electrode 11, and the bottom electrode 11 is insulated from the top electrode 13 (top electrode bus line 16).
    • 本发明提供一种图像显示装置,通过该图像显示装置,可以防止构成薄膜型电子源的底部电极和顶部电极(顶部电极总线)之间的电介质击穿,并且没有显示缺陷 并具有较长的使用寿命。 在阴极基板10上制备底部电极11,隧道绝缘体12和顶部电极13。 在顶部电极13的下层,形成顶部电极总线16,并且顶部电极13经由接触电极15可靠地连接到顶部电极母线16.场致电绝缘体12A,下层14 通过溅射沉积的层间绝缘体的a和层间绝缘体的上层14b层叠在顶部电极13和接触电极和底部电极11之间,并且底部电极11与顶部电极13(顶部电极 总线16)。
    • 5. 发明授权
    • Image display device
    • 图像显示装置
    • US07442961B2
    • 2008-10-28
    • US11326519
    • 2006-01-06
    • Masakazu SagawaToshiaki KusunokiKazutaka TsujiMutsumi Suzuki
    • Masakazu SagawaToshiaki KusunokiKazutaka TsujiMutsumi Suzuki
    • H01L29/04H01L27/14
    • H01J31/127H01J29/04H01J29/481
    • The present invention provides an image display device, by which it is possible to prevent dielectric breakdown between a bottom electrode and a top electrode (top electrode bus line), which make up thin-film type electron sources, and which is free of display defect and has longer service life.On a cathode substrate 10, a bottom electrode 11, a tunneling insulator 12, and a top electrode 13 are prepared. On a lower layer of the top electrode 13, a top electrode bus line 16 is formed, and the top electrode 13 is reliably connected to the top electrode bus line 16 via a contact electrode 15. A field insulator 12A, a lower layer 14a of the interlayer insulator deposited by sputtering and an upper layer 14b of the interlayer insulator are laminated between the top electrode 13 and the contact electrode and the bottom electrode 11, and the bottom electrode 11 is insulated from the top electrode 13 (top electrode bus line 16).
    • 本发明提供一种图像显示装置,通过该图像显示装置,可以防止构成薄膜型电子源的底部电极和顶部电极(顶部电极总线)之间的电介质击穿,并且没有显示缺陷 并具有较长的使用寿命。 在阴极基板10上制备底部电极11,隧道绝缘体12和顶部电极13。 在顶部电极13的下层,形成顶部电极总线16,并且顶部电极13经由接触电极15可靠地连接到顶部电极母线16.场致电绝缘体12A,下层14 通过溅射沉积的层间绝缘体的a和层间绝缘体的上层14b层叠在顶部电极13和接触电极和底部电极11之间,并且底部电极11与顶部电极13(顶部电极 总线16)。
    • 7. 发明申请
    • Image display device
    • 图像显示装置
    • US20060065895A1
    • 2006-03-30
    • US11237785
    • 2005-09-29
    • Toshiaki KusunokiMasakazu SagawaKazutaka Tsuji
    • Toshiaki KusunokiMasakazu SagawaKazutaka Tsuji
    • H01L29/76
    • H01J29/481H01J9/027
    • An interlayer insulator with a low taper angle is formed as a laminated film in which a silicon nitride film is formed on a silicon oxide film formed on the glass substrate side (field insulator side). Thus, an upper electrode of a cathode formed on the interlayer insulator is prevented from being broken, while a crossing portion between the upper electrode and a base electrode of the cathode is made low in capacitance. At the same time, sodium separated from glass of the substrate is blocked. Disconnection of the upper electrode is prevented due to the low taper angle of the interlayer insulator. Low capacitance is attained by increasing the film thickness of the interlayer insulator. The cathode is prevented from being contaminated with sodium separated from glass of the substrate.
    • 形成具有低锥角的层间绝缘体作为形成在玻璃基板侧(场绝缘体侧)上的氧化硅膜上形成氮化硅膜的层叠膜。 因此,防止形成在层间绝缘体上的阴极的上电极破坏,同时阴极的上电极和基极之间的交叉部分的电容变小。 同时,与基板玻璃分离的钠被阻断。 由于层间绝缘体的锥角较小,防止了上电极的断开。 通过增加层间绝缘体的膜厚可实现低电容。 防止阴极被与基板玻璃分离的钠污染。