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    • 31. 发明申请
    • Optically reconfigurable logic circuit
    • 光学可重构逻辑电路
    • US20090296178A1
    • 2009-12-03
    • US11597474
    • 2005-05-11
    • Minoru WatanabeFuminori Kobayashi
    • Minoru WatanabeFuminori Kobayashi
    • G02F3/00
    • H03K19/17748H01L27/1446
    • To provide an optically reconfigurable logic circuit in which a mount area of an optical circuit is reduced as much as possible and a high gate density is realized.In an optically reconfigurable logic circuit 1 provided with a plurality of configuration information input circuits 6 for converting an optical signal including logic circuit configuration information into an electric signal and holding and outputting this electric signal and a logic configuration variable circuit 7 for performing logic configuration on the basis of the logic circuit configuration information, the configuration information input circuits 6 holds the logic circuit configuration information as electric charge with use of a junction capacitance and a floating capacitance of a photoconductive device P. An inter-terminal voltage of the photoconductive device P is converted into binary data by a binary circuit and output as a circuit configuration signal. Then, the logic configuration variable circuit 7 is configured to execute a logic arithmetic processing before the inter-terminal voltage of the photoconductive device P drops to be equal to or lower than a logic threshold of the binary circuit due to a leak current.
    • 提供光可重构逻辑电路,其中尽可能减少光电路的安装面积并实现高栅极密度。 在具有多个配置信息输入电路6的光学可重构逻辑电路1中,用于将包括逻辑电路配置信息的光信号转换为电信号并保持并输出该电信号,以及用于执行逻辑配置的逻辑配置可变电路7 在逻辑电路配置信息的基础上,配置信息输入电路6使用结电容和感光体P的浮动电容将逻辑电路配置信息保持为电荷。光导器件P的端子间电压 通过二进制电路转换成二进制数据并作为电路配置信号输出。 然后,逻辑配置可变电路7被配置为在光电导器件P的端子间电压下降到等于或低于由于泄漏电流引起的二进制电路的逻辑阈值之前执行逻辑运算处理。
    • 36. 发明申请
    • Optically Reconfigurable Gate Array Write State Inspection Method, Write State Inspection Device, and Optically Reconfigurable Gate Array
    • 光学可重构门阵列写状态检测方法,写状态检测装置和光可重构门阵列
    • US20080030225A1
    • 2008-02-07
    • US11629750
    • 2005-06-16
    • Minoru WatanabeFuminori Kobayashi
    • Minoru WatanabeFuminori Kobayashi
    • H03K19/173
    • H03K19/17748G01R31/31728G01R31/318516
    • To provide a technology for inspecting a write state without requiring a dedicated circuit for write state inspection of a logical circuit in an ORGA. Upon switching an optical signal to be irradiated an optically reconfigurable bit element as an inspection target from ON to OFF, in the logical circuit structure of the ORGA, first and second optical signal patterns having the optical signal ON/OFF to be irradiated to the optically reconfigurable bit element serving as optical signal patterns configuring the logical structure in which at least one logical level or output impedance changes are sequentially irradiated and input to the logical circuit. In addition, an output-state detection circuit that is connected to the logical output terminals and detects whether the logical level of the output terminal is at eh H level, L level, or high impedance detects the output state. By comparing the detected state with the normal output state of the input optical signal pattern, it is judged whether the information write state of the optically reconfigurable bit element with the optical signal is successful or unsuccessful.
    • 提供用于检查写入状态的技术,而不需要用于ORGA中的逻辑电路的写入状态检查的专用电路。 在将要被照射的光信号作为检查对象从ON切换到OFF时,在ORGA的逻辑电路结构中,将具有光信号ON / OFF的第一和第二光信号图案照射到光学 可配置的位元素用作配置至少一个逻辑电平或输出阻抗改变的逻辑结构的光信号模式,并顺序地照射并输入到逻辑电路。 另外,连接到逻辑输出端子并检测输出端子的逻辑电平是否处于eh H电平,L电平或高阻抗的输出状态检测电路检测输出状态。 通过将检测到的状态与输入光信号图案的正常输出状态进行比较,判断光学可重构位元件与光信号的信息写入状态是成功还是不成功。
    • 38. 发明授权
    • Image sensing apparatus and method using radiation
    • 使用辐射的图像感测装置和方法
    • US07271392B2
    • 2007-09-18
    • US11428837
    • 2006-07-06
    • Takamasa IshiiMinoru Watanabe
    • Takamasa IshiiMinoru Watanabe
    • G01T1/24
    • G01T1/2928G01T1/026G01T1/24
    • This invention is to provide a radiation image sensing apparatus capable of automatically adjusting an incident radiation dose without requiring high-speed driving while suppressing any attenuation of the radiation before detection, and a method of manufacturing the same. To accomplish this, a read TFT (1) is formed on an insulating substrate (11). The semiconductor layer (19) and n+-semiconductor layer (20) of an MIS photoelectric conversion element (2) are formed on a second insulating layer (18) that covers the read TFT (1) to be aligned with source and drain electrodes (16) functioning as lower electrodes. The semiconductor layer (21) of a TFT sensor (3) is formed to be aligned with a gate electrode (17) when viewed from the upper side. The semiconductor layers (19, 21) are formed from the same layer. The upper electrode (22) of the MIS photoelectric conversion element (2) is formed on the n+-semiconductor layer (20). Two ohmic contact layers (23) are formed on the semiconductor layer (21). Source and drain electrodes (24) are formed on the two ohmic contact layers (23), respectively.
    • 本发明提供能够自动调整入射辐射剂量而不需要高速驱动同时抑制检测前辐射的任何衰减的辐射图像感测装置及其制造方法。 为了实现这一点,在绝缘基板(11)上形成读取TFT(1)。 MIS光电转换元件(2)的半导体层(19)和n + + - 半导体层(20)形成在覆盖读取的TFT(1)的第二绝缘层(18)上 与用作下电极的源极和漏极(16)对准。 当从上侧观察时,TFT传感器(3)的半导体层(21)形成为与栅电极(17)对齐。 半导体层(19,21)由相同的层形成。 MIS光电转换元件(2)的上电极(22)形成在n + + - 半导体层(20)上。 在半导体层(21)上形成有两个欧姆接触层(23)。 源极和漏极(24)分别形成在两个欧姆接触层(23)上。