专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20080197277A1 METHOD AND INSTRUMENT FOR CHEMICAL DEFECT CHARACTERIZATION IN HIGH VACUUM 失效
标题翻译：高真空化学缺陷特征的方法与仪器
公开(公告)号：US20080197277A1
公开(公告)日：2008-08-21
申请号：US12032526
申请日：2008-02-15
申请人： Mehran Nasser-Ghodsi , Ming Lun Yu , Stuart Friedman , Gabor Toth
发明人： Mehran Nasser-Ghodsi , Ming Lun Yu , Stuart Friedman , Gabor Toth
IPC分类号： H01J40/00
CPC分类号： G01N23/2276
摘要： A method and the instrument for characterization of the defects on a surface with Auger electron spectroscopy in a high vacuum environment are disclosed. Defects on the surface of a sample may be characterized with Auger electron spectroscopy in a high vacuum environment at a pressure of about 10−7 Torr to 10−6 Torr.
摘要翻译：公开了一种在高真空环境中用俄歇电子能谱表征表面缺陷的方法和仪器。样品表面的缺陷可以在高真空环境中以约10 -7乇至10 -6乇的压力进行俄歇电子能谱表征。

32. 发明授权

US07365321B2 Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis 有权
标题翻译：用于测量衬底特性或制备用于分析的衬底的方法和系统
公开(公告)号：US07365321B2
公开(公告)日：2008-04-29
申请号：US11086048
申请日：2005-03-22
申请人： Mehran Nasser-Ghodsi , Mark Borowicz
发明人： Mehran Nasser-Ghodsi , Mark Borowicz
IPC分类号： H01J37/06
CPC分类号： H01J37/317 , G01N1/32 , H01J37/244 , H01J37/3005 , H01J2237/2814 , H01J2237/3174 , H01J2237/31745
摘要： Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
摘要翻译：提供了用于测量基板的特性或准备用于分析的基板的方法和系统。用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。该特征可以是光致抗蚀剂特征。该方法还包括测量横截面轮廓的特性。制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。缺陷可能是地下缺陷或部分地下缺陷。制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。

33. 发明授权

US07078689B1 Integrated electron beam and contaminant removal system 失效
标题翻译：集成电子束和污染物去除系统
公开(公告)号：US07078689B1
公开(公告)日：2006-07-18
申请号：US11016074
申请日：2004-12-17
申请人： David L. Adler , Mehran Nasser-Ghodsi
发明人： David L. Adler , Mehran Nasser-Ghodsi
IPC分类号： H01J37/30 , H01L21/66
CPC分类号： H01J37/185 , H01J2237/022 , H01J2237/2817 , H01L21/02057 , H01L21/67213
摘要： One embodiment disclosed relates to an integrated electron beam inspection and contaminant removal tool. An electron beam column is configured to image an area on a substrate being inspected. A contaminant removal subsystem is integrated with the electron beam column and configured to remove contamination from a surface of the substrate. Means is advantageously included by which the substrate is kept from being exposed to air between the contaminant removal subsystem and the electron beam column.
摘要翻译：所公开的一个实施例涉及一体化电子束检查和污染物去除工具。电子束列被配置成对被检查的基板上的区域进行成像。污染物去除子系统与电子束柱一体化并且被配置为去除基底表面的污染物。有利地包括装置，通过该装置，基板被保持不被暴露于污染物去除子系统和电子束柱之间的空气。

34. 发明授权

US06810105B2 Methods and apparatus for dishing and erosion characterization 失效
标题翻译：凹陷和侵蚀表征的方法和装置
公开(公告)号：US06810105B2
公开(公告)日：2004-10-26
申请号：US10242496
申请日：2002-09-12
申请人： Mehran Nasser-Ghodsi , Phil Wood
发明人： Mehran Nasser-Ghodsi , Phil Wood
IPC分类号： G01N23223
CPC分类号： G01N23/2252 , H01J2237/2445
摘要： The present invention includes a system for efficient and effective detection and characterization of dishing and/or erosion. An x-ray emission inducer is used to scan a target on a sample. The target can be scanned at an acute incident angle to allow characterization of the dishing and/or erosion and analysis of the metallization or thin film layer topology.
摘要翻译：本发明包括用于有效和有效地检测和表征凹陷和/或侵蚀的系统。 X射线发射诱导剂用于扫描样品上的靶。可以以锐角入射角扫描靶，以便表征金属化或薄膜层拓扑的凹陷和/或腐蚀和分析。

35. 发明授权

US06271529B1 Ion implantation with charge neutralization 失效
标题翻译：离子注入与电荷中和
公开(公告)号：US06271529B1
公开(公告)日：2001-08-07
申请号：US09083707
申请日：1998-05-22
申请人： Marvin Farley , Vadim G. Dudnikov , Mehran Nasser-Ghodsi
发明人： Marvin Farley , Vadim G. Dudnikov , Mehran Nasser-Ghodsi
IPC分类号： H01S100
CPC分类号： H01J37/026 , H01J37/063 , H01J37/3171 , H01J2237/0041 , H01J2237/0042 , H01J2237/0044 , H01J2237/0045 , H05H1/54 , H05H3/02
摘要： An ion implanter is provided for implanting ions in a workpiece. The ion implanter includes an apparatus for generating an ion beam and directing it toward a surface of a work piece and a plasma generator for generating plasma to neutralize the ion beam and the work piece surface. The plasma generator has a plasma generator chamber defined by walls, a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface, cathodes, and anodes spaced from the cathodes and from the walls of the chamber. The plasma generator also has magnets arranged within the plasma generator chamber, adjacent the chamber walls to generate a magnetic field to deflect primary electrons emitted from the cathode from directly reaching the anode. The plasma generator also features a conductive shield, positioned within the chamber between the anode and the magnets, the shield having an electric potential selected to deflect electrons, the magnetic field and the conductive shield effective during operation to cause electrons from the cathode to trace extended paths to ionize gas within the chamber to generate plasma before reaching the anode. A drift tube defined by walls through which the ion beam passes before reaching the workpiece is opened into by the aperture opens into the tube. A series of parallel, linear magnets are positioned perpendicular to the general path of the ion beam. The adjacent poles of adjacent magnets are of opposite polarity.
摘要翻译：提供离子注入机用于将离子注入到工件中。离子注入机包括用于产生离子束并将其引导到工件的表面的装置和用于产生等离子体以中和离子束和工件表面的等离子体发生器的装置。等离子体发生器具有由壁限定的等离子体发生器室，用于在室中产生的等离子体的相对较窄的出口孔，以离开室以中和来自阴极和阴极以及与阴极隔离的工件表面，阴极和阳极房间。等离子体发生器还具有布置在等离子体发生器室内的磁体，邻近室壁以产生磁场，以使从阴极发射的一次电子直接到达阳极。等离子体发生器还具有导电屏蔽，其位于阳极和磁体之间的室内，屏蔽具有选择用于偏转电子的电位，磁场和导电屏蔽在操作期间有效以使来自阴极的电子延伸在室内电离气体以在到达阳极之前产生等离子体的路径。由到达工件的离子束通过的由壁限定的漂移管通过孔打开进入管中。一系列平行的线性磁体垂直于离子束的通用路径定位。相邻磁体的相邻磁极具有相反的极性。

36. 发明授权

US5907158A Broad range ion implanter 失效
标题翻译：宽范围离子注入机
公开(公告)号：US5907158A
公开(公告)日：1999-05-25
申请号：US856410
申请日：1997-05-14
申请人： Mehran Nasser-Ghodsi , Andrew Wittkower , Hilton F. Glavish , Kenneth H. Purser , Gaylord C. Noblitt, III
发明人： Mehran Nasser-Ghodsi , Andrew Wittkower , Hilton F. Glavish , Kenneth H. Purser , Gaylord C. Noblitt, III
IPC分类号： H01J37/317 , H01J37/147
CPC分类号： H01J37/3171
摘要： Ion implanter having at least two independent ion generating systems coupled to a single scanning end station. In a preferred embodiment one of the ion generating systems generates ions approximately in the 3-80 keV range and the other system generates ions approximately in the 80-3,000 keV range. The scanning end station may be employ magnetic, electrostatic, or mechanical scanning. This invention has particular relevance for the controlled doping of semiconducting materials and flat panel displays units in which doping may be needed for the production of micro-electronic devices, the sub-circuit crystal damage that is useful for gettering unwanted impurity atoms and for the development of etch pits in flat panel displays. The disclosed apparatus makes possible a variety of chained implants at different energies using the same mask.
摘要翻译：离子注入机具有耦合到单个扫描终端站的至少两个独立离子产生系统。在优选实施例中，离子产生系统之一产生大约在3-80keV范围内的离子，另一个系统产生大约在80-3000keV范围内的离子。扫描端站可以采用磁性，静电或机械扫描。本发明对于半导体材料和平板显示器单元的受控掺杂特别有用，其中可能需要掺杂用于生产微电子器件，用于吸收不需要的杂质原子的子电路晶体损伤和用于发展的蚀刻坑在平板显示器中。所公开的装置使得能够使用相同的掩模在不同能量下的各种链式植入物。

37. 发明授权

US08658973B2 Auger elemental identification algorithm 失效
标题翻译：俄歇元素识别算法
公开(公告)号：US08658973B2
公开(公告)日：2014-02-25
申请号：US13913240
申请日：2013-06-07
申请人： Mark Neil , Mehran Nasser-Ghodsi , Christopher Sears
发明人： Mark Neil , Mehran Nasser-Ghodsi , Christopher Sears
IPC分类号： H01J37/26
CPC分类号： H01J37/26 , G01N23/2276 , G01N2223/345 , G06K9/00563 , G06K9/6271 , H01J49/0036 , H01J49/44
摘要： System and methods for decomposing an Auger electron spectrum into elemental and chemical components, includes conditioning and input spectrum to generate a normalized input spectrum; determining statistical correlation between the normalized input spectrum and stored elemental spectral signatures; and characterizing elemental or chemical species in the input spectrum from the statistical correlation, wherein said conditioning the input spectrum includes estimating a background signal of non-Auger electrons in the input spectrum and subtracting the estimated background signal from the input spectrum.
摘要翻译：将俄歇电子谱分解为元素和化学成分的系统和方法包括调节和输入光谱以产生归一化输入光谱; 确定归一化输入光谱和存储的基本光谱特征之间的统计相关性; 以及从所述统计相关性表征所述输入光谱中的元素或化学物质，其中所述调节所述输入光谱包括估计所述输入光谱中的非俄歇电子的背景信号并从所述输入光谱中减去所估计的背景信号。

38. 发明授权

US08202440B1 Methods and apparatus for electron beam assisted etching at low temperatures 有权
标题翻译：低温电子束辅助蚀刻的方法和装置
公开(公告)号：US08202440B1
公开(公告)日：2012-06-19
申请号：US11670928
申请日：2007-02-02
申请人： Mehran Nasser-Ghodsi , Ying Wang , Harrison Chin , Anne Testoni , R. Chris Burns
发明人： Mehran Nasser-Ghodsi , Ying Wang , Harrison Chin , Anne Testoni , R. Chris Burns
IPC分类号： C03C15/00 , C23F1/00
CPC分类号： C23F4/00 , H01L21/32136
摘要： Disclosed are methods and apparatus for etching a sample, such as a semiconductor device or wafer. In general terms, embodiments of the present invention allow dry etching of a material on a sample, such as a copper material, at room temperature using a reactive substance, such as a chorine based gas. For example, the mechanisms of the present invention allow precise etching of a copper material to produce fine feature patterns without heating up the whole device or substrate to an elevated temperature such as 50° C. and above. The etching is assisted by simultaneously scanning a charged particle beam, such as an electron beam, and a photon beam, such as a laser beam, over a same target area of the sample while the reactive substance is introduced near the same target area. The reactive substance, charged particle beam, and photon beam act in combination to etch the sample at the target area. For example, a copper layer may be etched using the mechanisms of the present invention.
摘要翻译：公开了用于蚀刻诸如半导体器件或晶片的样品的方法和装置。一般来说，本发明的实施方案允许使用反应性物质如基于氯化物的气体在室温下在样品（例如铜材料）上干燥蚀刻材料。例如，本发明的机构允许铜材料的精确蚀刻以产生精细的特征图案，而不会将整个装置或基板加热到升高的温度，例如50℃及以上。通过在样品的相同目标区域上同时扫描诸如电子束的带电粒子束和诸如激光束的光子束来辅助蚀刻，同时将反应物质引入到相同目标区域附近。反应物质，带电粒子束和光子束组合起来，以在目标区域刻蚀样品。例如，可以使用本发明的机构蚀刻铜层。

39. 发明授权

US08188451B1 Electron generation and delivery system for contamination sensitive emitters 有权
标题翻译：用于污染敏感发射器的电子发射和传输系统
公开(公告)号：US08188451B1
公开(公告)日：2012-05-29
申请号：US12561969
申请日：2009-09-17
申请人： Mehran Nasser-Ghodsi
发明人： Mehran Nasser-Ghodsi
IPC分类号： H01J1/304 , H01J3/12
CPC分类号： H01J37/073 , H01J37/265 , H01J2237/022 , H01J2237/06341 , H01J2237/0653
摘要： Contamination may be removed from an emitter tip of a field emitter during operation of the emitter tip in a system having an electron beam column having an electrode with a beam defining aperture, an electron collector located proximate to the beam defining aperture between the electrode and the field emitter, and an electron deflector located between the emitter tip and the electron collector. At regular predetermined intervals an electron beam from the emitter tip may be deflected away from a path through the beam defining aperture and onto the electron collector. An electron beam current to the electron collector may be determined and the emitter tip may be flash heated if the current to the electron collector is below a threshold.
摘要翻译：在具有电子束列的电子束列的系统中，在发射极尖端的操作期间，可以从场致发射体的发射极尖端去除污染，电子束具有限定孔的光束，位于电极和电极之间的光束限定孔附近的电子收集器位于发射极尖端和电子收集器之间的电子偏转器。以规则的预定间隔，来自发射极尖端的电子束可以偏离通过光束限定孔径的路径并且到电子收集器上。可以确定到电子收集器的电子束电流，并且如果到电子收集器的电流低于阈值，则可以将发射极尖端闪光加热。

40. 发明授权

US08008207B2 Use of ion implantation in chemical etching 有权
标题翻译：在化学蚀刻中使用离子注入
公开(公告)号：US08008207B2
公开(公告)日：2011-08-30
申请号：US11752829
申请日：2007-05-23
申请人： Ming Lun Yu , Mehran Nasser-Ghodsi
发明人： Ming Lun Yu , Mehran Nasser-Ghodsi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F7/2043 , H01J2237/31732 , H01J2237/3174 , H01J2237/31744 , H01L21/02057 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： A method for controlling chemical dry etching to improve smoothness of an etched surface is disclosed. Ions are implanted into a surface to form a volatilizable compound at a temperature low enough to avoid, reduce, or eliminate formation of three-dimensional structures of the volatilizable compound that might create the roughness at an etched surface of the volatilizable compound. The ions are applied in a sufficient energy to penetrate to a predetermined depth of material that is to be removed from the surface in an etching cycle, and in a sufficient dosage to achieve full formation of the volatilizable compound. The surface of the volatilizable compound is exposed to a gas composition for a time duration sufficient to completely etch the volatilizable compound.
摘要翻译：公开了一种用于控制化学干蚀刻以改善蚀刻表面的平滑度的方法。将离子植入表面以在足够低的温度下形成可挥发化合物，以避免，减少或消除可挥发化合物的三维结构的形成，这可能在可挥发化合物的蚀刻表面产生粗糙度。以足够的能量施加离子以在蚀刻循环中渗透到要从表面除去的预定深度的材料，并以足够的剂量实现完全形成可挥发化合物。可挥发化合物的表面暴露于气体组合物持续足够时间以完全蚀刻可挥发化合物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式