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31. 发明授权

US06285010B1 Method and device for high-temperature, high-pressure treatment of semiconductor wafer 失效
标题翻译：用于半导体晶片高温高压处理的方法和装置
公开(公告)号：US06285010B1
公开(公告)日：2001-09-04
申请号：US09520218
申请日：2000-03-07
申请人： Takao Fujikawa , Yutaka Narukawa , Tsuneharu Masuda , Makoto Kadoguchi
发明人： Takao Fujikawa , Yutaka Narukawa , Tsuneharu Masuda , Makoto Kadoguchi
IPC分类号： A21B100
CPC分类号： H01L21/67109 , H01L21/76882
摘要： In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafers are vertically stacked in the treatment chamber, and the heater is arranged within the treatment chamber to perform the treatment while supplying a heating power by DC to the heater, whereby generation of particles from the heater is suppressed.
摘要翻译：在用于对压力容器中的晶片状半导体材料进行充电的半导体晶片的高温高压处理方法中，对诸如氩的惰性气体进行加压和加压，并且通过使用电阻加热来升高温度将晶片垂直堆叠在处理室中，并且加热器布置在处理室内，以通过DC向加热器提供加热功率进行处理，从而抑制来自加热器的颗粒的产生。

32. 发明授权

US5137755A Impregnating carbonizing process and apparatus 失效
标题翻译：浸渍碳化工艺和设备
公开(公告)号：US5137755A
公开(公告)日：1992-08-11
申请号：US656691
申请日：1991-02-19
申请人： Takao Fujikawa , Takahiko Ishii
发明人： Takao Fujikawa , Takahiko Ishii
IPC分类号： C04B41/82 , C01B31/02 , C01B31/04 , C04B35/52 , C04B35/83 , F27B17/00
CPC分类号： C04B35/521 , C04B35/52 , C04B35/83
摘要： An impregnating carbonizing process and apparatus which permit reduction in cost of consumable goods and can operate at a reduced cost and a heating and vacuum impregnating operation which requires a very long period of time can be performed on the outside of an expensive high pressure vessel to accomplish rapid carbonization and baking. The process comprises of inserting a porous shaped body of carbon and a block of impregnant into a specimen case, discharging gas from within the specimen case, heating the impregnant into a molten condition under a reduced pressure, inserting the specimen case into a high pressure vessel, admitting high pressure gas into the high pressure vessel and also into the specimen case so as to penetrate the impregnant into the shaped body of carbon, heating the shaped body to a high temperature, and discharging the high pressure gas to lower the pressure within the specimen case at a controlled rate in response to a pressure within the high pressure vessel to carbonize the impregnant. The apparatus is constructed to suitably carry out the process.
摘要翻译：可以在昂贵的高压容器的外部进行浸渍碳化方法和装置，其允许降低消耗品的成本并且可以以降低的成本运行并且需要非常长的时间段的加热和真空浸渍操作来完成快速碳化和烘烤。该方法包括将多孔成形体的碳和一块浸渍剂插入样品壳体中，从样品壳体内排出气体，将浸渍剂在减压下加热到熔融状态，将样品箱插入高压容器将高压气体进入高压容器并进入样品箱，以便将浸渍剂渗透到成型体中，将成形体加热到高温，并排出高压气体以降低内部压力样品盒以受控的速率响应于高压容器内的压力以使浸渍剂碳化。该装置被构造成适当地执行该过程。

33. 发明授权

US5126103A Process for modifying porous material having open cells 失效
标题翻译：用于修饰具有开放细胞的多孔材料的方法
公开(公告)号：US5126103A
公开(公告)日：1992-06-30
申请号：US667407
申请日：1991-04-08
申请人： Kozo Ishizaki , Shojiro Okada , Takao Fujikawa , Atsushi Takata
发明人： Kozo Ishizaki , Shojiro Okada , Takao Fujikawa , Atsushi Takata
IPC分类号： B01D39/20 , B22F3/11 , B22F3/14 , B22F5/00 , C04B35/645 , C04B41/00 , C04B41/80
CPC分类号： C04B41/009 , B01D39/2034 , B01D39/2075 , B22F3/11 , C04B35/6455 , C04B41/00 , C04B41/0072 , C04B41/80 , C04B2111/00267 , C04B2111/00793
摘要： The invention provides a process for modifying a ceramic and/or metallic porous material having open cells necessary for the material to serve the function of gas diffusing materials, filters or the like. The porous material is subjected to hot isostatic pressing at a temperature at which the base portion of the porous material softens or melts to compact or homogenize the base portion.
摘要翻译： PCT No.PCT / JP90 / 01003 Sec。 371日期：1991年4月8日 102（e）日期1991年4月8日PCT提交1990年8月6日PCT公布。公开号WO91 / 01834 日本1991年2月21日。本发明提供了一种用于改变具有开孔的陶瓷和/或金属多孔材料的方法，所述多孔材料是材料所必需的，用于气体扩散材料，过滤器等的功能。在多孔材料的基部软化或熔化的温度下对多孔材料进行热等静压，以压实或均质基部。

34. 发明申请

US20130195712A1 METHOD FOR REMOVING IMPURITIES IN MOLTEN CAST IRON, AND CAST IRON RAW MATERIAL 审中-公开
标题翻译：用于移除铸铁和铸铁原料的污染物的方法
公开(公告)号：US20130195712A1
公开(公告)日：2013-08-01
申请号：US13575859
申请日：2011-01-24
申请人： Toshitake Kanno , Ilgoo Kang , Takao Fujikawa , Hiromitsu Takeuchi , Kiyoshi Kinoshita , Hirotoshi Murata , Nobuya Yamamoto , Tatsuo Atsumi
发明人： Toshitake Kanno , Ilgoo Kang , Takao Fujikawa , Hiromitsu Takeuchi , Kiyoshi Kinoshita , Hirotoshi Murata , Nobuya Yamamoto , Tatsuo Atsumi
IPC分类号： C21C1/04 , C22C37/10
CPC分类号： C21C1/04 , C21C1/08 , C22C37/10
摘要： There is provided a method for obtaining a pure melt in which the impurities Mn, Al, Ti, Pb, Zn, and B are removed from molten cast iron and depletion of useful C and Si is suppressed, the method wherein an excess oxygen flame having a theoretical combustion ratio of fuel and oxygen (amount of oxygen (volume)×5/amount of fuel (volume)) of 1 to 1.5 is directly exposed to the surface of pre-melted molten cast iron, the temperature of the molten cast iron is held at 1250° C. or more and less than 1500° C. while the melt surface is superheated and an acidic slag is brought into contact with the melt, and an oxygen-containing gas is injected into the interior of the molten cast iron.
摘要翻译：提供了一种获得纯熔体的方法，其中从熔融铸铁中除去杂质Mn，Al，Ti，Pb，Zn和B，并抑制有用的C和Si的消耗，其中过量的氧焰具有燃料和氧气的理论燃烧比（氧气（体积）×5 /燃料量（体积））为1〜1.5直接暴露于预熔融熔融铸铁的表面，熔融铸铁的温度保持在1250℃或更多且小于1500℃，同时熔体表面过热并使酸性炉渣与熔体接触，并且将含氧气体注入熔融铸铁内部。

35. 发明申请

US20100284849A1 AUSTENITIC CAST IRON AND MANUFACTURING PROCESS FOR THE SAME, AUSTENITIC-CAST-IRON CAST PRODUCT AND COMPONENT PART FOR EXHAUST SYSTEM 审中-公开
标题翻译：奥斯卡铸铁及其制造方法，奥斯卡 - 铸铁铸件产品和排气系统组件
公开(公告)号：US20100284849A1
公开(公告)日：2010-11-11
申请号：US12675283
申请日：2008-08-29
申请人： Tomohei Sugiyama , Manabu Ishikawa , Hiroyuki Isomura , Mamoru Kojima , Naoki Yamamoto , Kyoichi Kinoshita , Takao Fujikawa
发明人： Tomohei Sugiyama , Manabu Ishikawa , Hiroyuki Isomura , Mamoru Kojima , Naoki Yamamoto , Kyoichi Kinoshita , Takao Fujikawa
IPC分类号： C22C37/08 , C22C37/00 , C22C38/42 , C22C38/16 , C22C38/40 , C22C38/08 , C22C37/06 , C22C37/10 , B22D27/00
CPC分类号： C22C37/08 , C21C1/105 , C22C37/04
摘要： An austenitic cast iron according to the present invention has Ni: from 7 to 15% by mass, and is characterized in that it comprises a base structure in which an austenite phase makes a major phase even in ordinary-temperature region by adjusting the respective compositions of Cr, Ni and Cu, excepting C and Si, so as to fall within predetermined ranges. In accordance with the present invention, it is possible to obtain an austenitic cast iron, which is excellent in terms of oxidation resistance and the like, inexpensively, while reducing the content of expensive Ni.
摘要翻译：根据本发明的奥氏体铸铁的Ni：7〜15质量％，其特征在于，其特征在于，通过调整各组成物，其中奥氏体相在常温区域中成为主相的基体结构的Cr，Ni和Cu，除了C和Si之外，以便落在预定范围内。根据本发明，可以在降低昂贵的Ni的含量的同时，廉价地获得耐氧化性优异的奥氏体铸铁。

36. 发明授权

US06991370B2 Temperature measuring apparatus of high melting point metal carbide-carbon system material thermocouple type, and method for producing the apparatus 有权
标题翻译：高熔点金属碳化物 - 碳系材料热电偶型的温度测量装置及其制造方法
公开(公告)号：US06991370B2
公开(公告)日：2006-01-31
申请号：US10623521
申请日：2003-07-22
申请人： Shigeo Kofune , Takao Fujikawa
发明人： Shigeo Kofune , Takao Fujikawa
IPC分类号： G01K7/02 , G01K7/04 , H01L35/12 , H01L35/00
CPC分类号： G01K7/02
摘要： The temperature measuring apparatus according to the present invention is of the high melting point metal carbide—carbon system material thermocouple type. According to this temperature measuring apparatus, it is possible to measure temperatures from a room temperature range to a high temperature range in excess of 2000° C. continuously, stably and with good accuracy. A constitution is preferable wherein a rod-like member formed of high melting point metal carbide is inserted into a pipe-like member with a bottom formed of carbon system material, and connected at the bottom to serve as a temperature measuring portion.
摘要翻译：根据本发明的温度测量装置是高熔点金属碳化物 - 碳系材料热电偶类型。根据该温度测量装置，可以连续，稳定地并且以高精度测量从室温到超过2000℃的高温范围的温度。优选其中将由高熔点金属碳化物形成的棒状构件插入由碳系材料形成的底部的管状构件中，并且在底部连接以用作温度测量部分。

37. 发明授权

US06323120B1 Method of forming a wiring film 失效
标题翻译：形成布线膜的方法
公开(公告)号：US06323120B1
公开(公告)日：2001-11-27
申请号：US09522473
申请日：2000-03-09
申请人： Takao Fujikawa , Yutaka Narukawa , Kohei Suzuki , Takuya Masui
发明人： Takao Fujikawa , Yutaka Narukawa , Kohei Suzuki , Takuya Masui
IPC分类号： H01L21283
CPC分类号： H01L21/76873 , H01L21/76843 , H01L21/76882
摘要： A method of forming an intact wiring film by applying a filling treatment with a metal material with no pores to holes/trenches, the method comprising forming a barrier layer 3 to an insulation film 2 having holes/trenches 2A, forming a seed layer by a PVD method on the surface of the barrier layer and laminating a wiring film 5A by a electrolytic plating method and heat treating the same under a high temperature/high pressure gas atmosphere.
摘要翻译：通过对孔/沟槽没有孔的金属材料进行填充处理来形成完整的布线膜的方法，该方法包括在具有孔/沟槽2A的绝缘膜2上形成阻挡层3，形成阻挡层3，通过 PVD法，通过电解电镀法层叠布线膜5A，并在高温高压气体气氛下进行热处理。

38. 发明授权

US5898727A High-temperature high-pressure gas processing apparatus 失效
标题翻译：高温高压气体处理设备
公开(公告)号：US5898727A
公开(公告)日：1999-04-27
申请号：US845822
申请日：1997-04-28
申请人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
发明人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
IPC分类号： F27B17/00 , C23C14/58 , H01L21/00 , F27D7/06
CPC分类号： C23C14/5806 , C23C14/5886 , H01L21/67017
摘要： The present invention provides a processing apparatus for eliminating pores in via holes of a silicon semiconductor. The apparatus includes a high-pressure vessel divided into at least two vessel component members in the axial direction thereof, at least one of which has a cooling unit, a frame for holding a load acting in the axial direction of the high-pressure vessel in processing a workpiece to be processed in the high-pressure vessel, an actuator for moving the vessel component members of the high-pressure vessel in the axial direction thereof so as to load and unload the workpiece, a sealing unit fitted to a portion for loading and unloading the workpiece, which is formed when the vessel component members are moved in the axial direction of the vessel, and a retractable cotter unit for transmitting a load acting in the axial direction of the high-pressure vessel to the frame.
摘要翻译：本发明提供一种用于消除硅半导体的通孔中的孔的处理装置。该装置包括在其轴向方向上分成至少两个容器部件的高压容器，其中至少一个具有冷却单元，用于保持在高压容器的轴向方向上作用的负载的框架在高压容器内加工待加工的工件，用于使高压容器的容器部件沿其轴向移动以便加载和卸载工件的致动器，安装到用于装载的部分的密封单元以及卸载当容器部件沿容器的轴向移动时形成的工件，以及用于将在高压容器的轴向方向上作用的负载传递到框架的伸缩开口单元。

39. 发明授权

US5685907A Apparatus for preparing compound single crystals 失效
标题翻译：复合单晶制备装置
公开(公告)号：US5685907A
公开(公告)日：1997-11-11
申请号：US586825
申请日：1996-01-31
申请人： Takao Fujikawa , Katsuhiro Uehara , Yoshihiko Sakashita , Kazuya Suzuki , Hiroshi Okada , Takao Kawanaka , Seiichiro Ohmoto
发明人： Takao Fujikawa , Katsuhiro Uehara , Yoshihiko Sakashita , Kazuya Suzuki , Hiroshi Okada , Takao Kawanaka , Seiichiro Ohmoto
IPC分类号： C30B11/00 , C30B35/00
CPC分类号： C30B11/00 , C30B29/48 , Y10T117/102
摘要： A method and apparatus for the preparation of single crystals of group II-VI compounds such as ZnSe and CdTe and group III-V compounds such as InP and GaP or of ternary compounds thereof, from which some of their components are likely to be dissociated and evaporated during crystal growth at high temperatures. Single crystals are prepared which enable the preparation of high quality compound single crystals and prevent the contamination of furnace structures. The method includes melting a source material in a container by heating in a furnace body and solidifying the melt by cooling from the bottom to grow a single crystal. The container is enclosed by an airtight chamber communicating to the outside with a pressure equalizing passage. Heating is performed while the passage is held at a low temperature equal to or lower than the melting point of a high-dissociation-pressure component of the source material. The apparatus includes a container for holding the source material, a hermetical furnace body including a heater to heat the container, an airtight chamber inside the heater which encloses the container and a pressure equalizing passage communicating with the airtight chamber and forming a lower portion of the chamber.
摘要翻译： PCT No.PCT / JP95 / 01069 Sec。 371日期1996年1月31日 102（e）日期1996年1月31日PCT归档1995年6月1日PCT公布。 WO95 / 33873 PCT出版物日期：1995年12月14日一种用于制备诸如ZnSe和CdTe的II-VI族化合物的单晶和InP和GaP的III-V族化合物或其三元化合物的方法和装置，其一些组分为在高温下晶体生长期间可能会被解离和蒸发。制备单晶，其可制备高质量的复合单晶并防止炉结构的污染。该方法包括通过在炉体中加热熔化容器中的源材料并通过从底部冷却来固化熔体以生长单晶。容器由与压力平衡通道连通的气密室封闭。当通道保持在等于或低于源材料的高解离压分量的熔点的低温时进行加热。该装置包括用于保持源材料的容器，包括用于加热容器的加热器的密封炉体，包围容器的加热器内的气密室和与气密室连通的压力平衡通道，并形成房间。

40. 发明授权

US5187125A Sintered body of calcium carbonate and process for producing same 失效
标题翻译：碳酸钙烧结体及其制造方法
公开(公告)号：US5187125A
公开(公告)日：1993-02-16
申请号：US766263
申请日：1991-09-27
申请人： Nobuo Someya , Tadao Kitazato , Takao Fujikawa , Yasuo Manabe
发明人： Nobuo Someya , Tadao Kitazato , Takao Fujikawa , Yasuo Manabe
IPC分类号： C04B35/622 , C04B35/00 , C04B35/03 , C04B35/645 , C04B38/00
CPC分类号： C04B35/6455 , C04B35/03
摘要： The invention relates to a process for producing a sintered body of calcium carbonate without permitting thermal decomposition of calcium carbonate during sintering, and to the sintered body. A powder material primarily comprising calcium carbonate is subjected to a cold powder pressing process to prepare a green compact, which is then heated in a high-pressure gas atmosphere consisting essentially of an inert gas at a temperature t.degree. C. of900.ltoreq.t
摘要翻译：本发明涉及一种碳酸钙烧结体的制造方法，其不使碳酸钙在烧结时发生热分解，而且涉及烧结体。主要包含碳酸钙的粉末材料进行冷粉压制，制备生坯，然后在基本上由惰性气体组成的高压气体气氛中加热，温度t℃为900℃， t <1200，高气压Pkgf / cm2的

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