会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Hot isostatic pressing method and apparatus
    • 热等静压法及装置
    • US06837086B2
    • 2005-01-04
    • US10446671
    • 2003-05-29
    • Yasuo ManabeShigeo KofuneMakoto YonedaTakao Fujikawa
    • Yasuo ManabeShigeo KofuneMakoto YonedaTakao Fujikawa
    • B30B5/02B22F3/15C22F1/04C22F1/06F27B17/00B21D26/02
    • B30B11/002C21D2241/02C22F1/04C22F1/06
    • While a workpiece is heated and pressed by one of a pair of high-pressure vessels, a workpiece being pressed by the other high-pressure vessel is placed in a heated state. In the reducing process after termination of heating and pressing treatment of the workpiece by one high-pressure vessel, both the high-pressure vessels are placed in communication, and the pressure medium gas released from one high-pressure vessel is poured into the other high-pressure vessel. After pressures of both the high-pressure vessels have assumed a nearly balanced state, the pressure medium gas is sucked out of one high-pressure vessel by a compressor and pressed, and is poured into the other high-pressure vessel, and the workpiece is heated and pressed by the other high-pressure vessel. By the method as described, considerable shortening of cycle time of HIP treatment is achieved, and the HIP treatment can be carried out with high efficiency.
    • 当工件被一对高压容器中的一个加热和加压时,由另一个高压容器压制的工件被置于加热状态。 在通过一个高压容器对工件进行加热和加压处理终止之后的还原过程中,两个高压容器相互连通,将从一个高压容器释放的压力介质气体倒入另一个高压容器 -压力容器。 在两个高压容器的压力都呈现接近平衡的状态之后,通过压缩机将压力介质气体从一个高压容器中吸出并被压制,并且被倒入另一个高压容器中,并且工件是 被另一个高压容器加热和压制。 通过所述方法,实现了HIP处理循环时间的缩短,HIP处理能够高效率地进行。
    • 6. 发明授权
    • Exposure data processing method and device
    • 曝光数据处理方法和装置
    • US5754443A
    • 1998-05-19
    • US216050
    • 1994-03-22
    • Yasuo Manabe
    • Yasuo Manabe
    • G03F1/36G03F1/68H01J37/302H01L21/027H01L21/30G06F17/00
    • H01J37/3026H01J2237/31764
    • A method for processing exposure data corresponding to a pattern formed on a wafer includes the steps of (a) generating electron dose data relating to exposure per each pattern in an area to be exposed, (b) calculating exposure distance data which shows a degree to correct the electron dose data based on positional relations of each pattern as a pattern to be corrected in sequence with patterns in a predetermined range in the periphery thereof, based on the electron dose data determined by the step (a), (c) correcting the electron dose data determined by the step (a) with the exposure distance data determined by the step (b) to generate corrected electron dose data of each pattern, and (d) calculating an irradiation amount of each pattern based on the corrected electron dose data.
    • 一种用于处理对应于在晶片上形成的图案的曝光数据的方法,包括以下步骤:(a)产生与要曝光的区域中的每种图案的曝光有关的电子剂量数据,(b)计算曝光距离数据, 基于由步骤(a),(c)确定的电子剂量数据,根据步骤(a),(c)确定的电子剂量数据,将每个图案的位置关系作为待校正的图案按照其周围的预定范围内的图案进行校正, 通过步骤(a)确定的曝光距离数据确定的电子剂量数据,以产生每个图案的校正电子剂量数据,以及(d)基于校正的电子剂量数据计算每个图案的照射量 。
    • 7. 发明授权
    • Charged particle beam exposure method utilizing subfield proximity
corrections
    • 使用子场接近校正的带电粒子束曝光方法
    • US6087052A
    • 2000-07-11
    • US55990
    • 1998-04-07
    • Yasuo ManabeHiromi Hoshino
    • Yasuo ManabeHiromi Hoshino
    • G03F7/20H01J37/302G03F9/00
    • G03F7/2059H01J37/3026H01J2237/31769
    • The basis of the present invention is a charged particle beam exposure method comprising the steps of: (a) generating a plurality of areas within the sub-fields; (b) determining the pattern density within each of the areas, and correcting the pattern density in accordance with the pattern density of areas surrounding the area and the distance between areas; (c) generating a supplementary exposure pattern in the area when the corrected pattern density for the area is lower than a prescribed reference exposure density; and (d) exposing the material in accordance with exposure data comprising the supplementary exposure pattern data appended to the pattern data. A first invention comprises a step for further generating a supplementary exposure pattern in areas lying between pattern existing regions where the patterns are located, and having a pattern density higher than the reference exposure density, when the distance between the pattern existing regions is greater than a prescribed reference distance.
    • 本发明的基础是带电粒子束曝光方法,包括以下步骤:(a)在子场内产生多个区域; (b)确定每个区域内的图案密度,并且根据区域周围的区域的图案密度和区域之间的距离来校正图案密度; (c)当所述区域的校正图案密度低于规定的参考曝光浓度时,在所述区域中产生补充曝光图案; 和(d)根据包括附加到图案数据的补充曝光图案数据的曝光数据曝光该材料。 第一发明包括在图案存在区域之间的距离大于图形存在区域时,在图案存在区域之间的区域中进一步产生补充曝光图案并具有高于基准曝光浓度的图案密度的步骤 规定参考距离。
    • 8. 发明授权
    • Charged particle beam exposure method and charged particle beam exposure
apparatus therefor
    • 带电粒子束曝光方法和带电粒子束曝光装置
    • US6060717A
    • 2000-05-09
    • US139767
    • 1998-08-25
    • Yasuo ManabeHiromi HoshinoYasuhide Machida
    • Yasuo ManabeHiromi HoshinoYasuhide Machida
    • G21K5/04G03F7/20H01J37/302H01J37/305H01J37/317H01L21/027
    • B82Y10/00B82Y40/00H01J37/3026H01J37/3174H01J2237/31771
    • The present invention relates to a charged particle beam exposure method, wherein exposure data having exposure pattern data for each of a plurality of sub-fields located in a main field are acquired from pattern data for each of the sub-fields and a sample is exposed in accordance with the exposure data. The method comprises the steps of: forming a plurality of areas having different shapes, in accordance with patterns in the sub-fields, and acquiring pattern densities in the areas; correcting the pattern densities in accordance with pattern densities for areas surrounding the areas and with distances between the areas; generating auxiliary exposure patterns in the areas when the pattern densities for the areas are lower than a predetermined reference exposure density; and exposing the sample in accordance with the exposure data obtained by adding the data for the auxiliary exposure patterns to the pattern data. According to the present invention, a variable area can be formed, the number of areas can be reduced, and data processing can be performed more efficiently.
    • 带电粒子束曝光方法本发明涉及一种带电粒子束曝光方法,其中从每个子场的图案数据中获取具有位于主场中的多个子场中的每一个的曝光图案数据的曝光数据,并且样品曝光 按照曝光数据。 该方法包括以下步骤:根据子场中的图案形成具有不同形状的多个区域,并获取区域中的图案密度; 根据区域周围区域的图案密度和区域之间的距离来校正图案密度; 当区域的图案密度低于预定的参考曝光浓度的区域中产生辅助曝光图案; 以及根据通过将辅助曝光图案的数据添加到图案数据而获得的曝光数据来曝光样品。 根据本发明,可以形成可变区域,可以减少区域数量,并且可以更有效地执行数据处理。
    • 9. 发明授权
    • Method of displaying, inspecting and modifying pattern for exposure
    • 显示,检查和修改曝光图案的方法
    • US06546543B1
    • 2003-04-08
    • US09392725
    • 1999-09-09
    • Yasuo ManabeHiromi Hoshino
    • Yasuo ManabeHiromi Hoshino
    • G06F1750
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/30411H01J2237/31764H01J2237/31769
    • According to a menu item selected in step S12 (a pressed command button), for a wafer exposing pattern, program goes to steps S13 and S14, and further, display in step S15, inspection in step S16 or modification in step 17 is performed; for a block pattern on a stencil mask, program goes to steps 13 and 24, and further display in step S25, inspection in step S26 or modification in step S27 is performed. In step S16 exposure simulation is performed, in step S15 a result thereof is displayed and in step S17 wafer exposing pattern data are modified based on the result. When a block pattern on a stencil mask is modified, the instances of the block pattern in the wafer exposing pattern data is simultaneously modified as well.
    • 根据在步骤S12中选择的菜单项(按下的按钮),对于晶片曝光图案,程序进入步骤S13和S14,并且进一步在步骤S15中显示步骤S16中的检查或步骤17的修改。 对于模板掩模上的块图案,程序进行到步骤13和24,并且在步骤S25中进一步显示,执行步骤S26中的检查或步骤S27中的修改。 在步骤S16中,执行曝光模拟,在步骤S15中显示其结果,并且在步骤S17中,基于结果修改晶片曝光图案数据。 当模板掩模上的块图案被修改时,晶片曝光图案数据中的块图案的实例也被同时修改。