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    • 35. 发明授权
    • Method for fabricating passivation layer
    • 钝化层制造方法
    • US07166542B2
    • 2007-01-23
    • US10707112
    • 2003-11-21
    • Ming-Hung LoLiang-Pin ChouChun-Ming WangLi-Fu Chen
    • Ming-Hung LoLiang-Pin ChouChun-Ming WangLi-Fu Chen
    • H01L21/31H01L21/469
    • H01L21/76834H01L21/76832
    • A method of fabricating a passivation layer is provided. A substrate with a plurality of device structures and at least an interconnect thereon is provided. A patterned metallic layer is formed over the interconnection layer. A plasma-enhanced chemical vapor deposition process is performed to form a first passivation over the metallic layer such that the processing pressure is higher (and/or the processing power is lower) than the pressure (the power) used in prior art. A moisture impermeable second passivation is formed over the first passivation layer. With the first passivation formed in a higher processing pressure (and/or lower processing power), damages to metallic layers or devices due to plasma bombardment is minimized.
    • 提供一种制造钝化层的方法。 提供具有多个器件结构并且至少在其上的互连的衬底。 在互连层上形成图案化的金属层。 执行等离子体增强化学气相沉积工艺以在金属层上形成第一钝化,使得处理压力比现有技术中使用的压力(功率)更高(和/或处理能力较低)。 在第一钝化层上形成不透水的第二钝化。 由于在较高的处理压力(和/或较低的处理能力)下形成的第一钝化,由于等离子体轰击而对金属层或器件造成的损害最小化。
    • 36. 发明授权
    • Method and mask for enhancing the resolution of patterning 2-row holes
    • 用于提高图案化2排孔分辨率的方法和掩模
    • US08465906B2
    • 2013-06-18
    • US13081268
    • 2011-04-06
    • Chun-Ming WangChenche HuangMasaaki Higashitani
    • Chun-Ming WangChenche HuangMasaaki Higashitani
    • G03F7/20G03F7/36
    • G03F7/70433G03F1/26G03F1/32G03F1/36G03F7/70091
    • A photolithography mask including a plurality of mask features. Adjacent mask features are separated by a gap and are offset from each other such that individual mask features have one-side dense portions and two-side dense portions. Also a photolithography method that includes a step of providing a substantially opaque mask having N stepped rows of offset, substantially transparent, rectangular mask features, where N is an integer and N≧2. The method also includes illuminating a photoresist layer located over an underlying material with dipole illumination through the substantially transparent, rectangular mask features in the substantially opaque mask to form 2N rows of exposed regions in the photoresist layer. The exposed regions have a substantially elliptical or substantially circular shape when viewed from above the photoresist layer.
    • 一种包括多个掩模特征的光刻掩模。 相邻的掩模特征由间隙分隔开并且彼此偏移,使得各个掩模特征具有单侧致密部分和两侧致密部分。 还有一种光刻方法,其包括提供具有偏移的,基本上透明的矩形掩模特征的N个阶梯行的基本不透明掩模的步骤,其中N是整数,N> = 2。 该方法还包括通过偶极照明通过基本上不透明掩模中的基本上透明的矩形掩模特征照亮位于下层材料上的光致抗蚀剂层,以在光致抗蚀剂层中形成2N排暴露区域。 当从光致抗蚀剂层的上方观察时,暴露区域具有基本上椭圆形或大致圆形形状。