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1. 发明授权

US07166542B2 Method for fabricating passivation layer 有权
标题翻译：钝化层制造方法
公开(公告)号：US07166542B2
公开(公告)日：2007-01-23
申请号：US10707112
申请日：2003-11-21
申请人： Ming-Hung Lo , Liang-Pin Chou , Chun-Ming Wang , Li-Fu Chen
发明人： Ming-Hung Lo , Liang-Pin Chou , Chun-Ming Wang , Li-Fu Chen
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , H01L21/76832
摘要： A method of fabricating a passivation layer is provided. A substrate with a plurality of device structures and at least an interconnect thereon is provided. A patterned metallic layer is formed over the interconnection layer. A plasma-enhanced chemical vapor deposition process is performed to form a first passivation over the metallic layer such that the processing pressure is higher (and/or the processing power is lower) than the pressure (the power) used in prior art. A moisture impermeable second passivation is formed over the first passivation layer. With the first passivation formed in a higher processing pressure (and/or lower processing power), damages to metallic layers or devices due to plasma bombardment is minimized.
摘要翻译：提供一种制造钝化层的方法。提供具有多个器件结构并且至少在其上的互连的衬底。在互连层上形成图案化的金属层。执行等离子体增强化学气相沉积工艺以在金属层上形成第一钝化，使得处理压力比现有技术中使用的压力（功率）更高（和/或处理能力较低）。在第一钝化层上形成不透水的第二钝化。由于在较高的处理压力（和/或较低的处理能力）下形成的第一钝化，由于等离子体轰击而对金属层或器件造成的损害最小化。

2. 发明申请

US20090017604A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090017604A1
公开(公告)日：2009-01-15
申请号：US11933742
申请日：2007-11-01
申请人： Mao-Ying WANG , Jer-Chyi WANG , Wei-Hui HSU , Liang-Pin CHOU , Kuo-Hui SU , Chang-Rong WU , Chao-Sung LAI
发明人： Mao-Ying WANG , Jer-Chyi WANG , Wei-Hui HSU , Liang-Pin CHOU , Kuo-Hui SU , Chang-Rong WU , Chao-Sung LAI
IPC分类号： H01L21/425
CPC分类号： H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/2822 , H01L21/3105 , H01L21/318 , H01L29/7833
摘要： A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device comprises providing a substrate. Under an atmosphere containing a fluoride nitride compound, a plasma treatment process is performed to simultaneously fluorinate and nitrify a surface of the substrate. Thereafter, a dielectric layer is formed on the substrate.
摘要翻译：提供一种制造半导体器件的方法。制造半导体器件的方法包括提供衬底。在含有氟化氮化合物的气氛下，进行等离子体处理工艺以同时氟化和硝化基板的表面。此后，在基板上形成电介质层。

3. 发明申请

US20050074964A1 [METHOD FOR FABRICATING PASSIVATION LAYER] 有权
标题翻译： [制造钝化层的方法]
公开(公告)号：US20050074964A1
公开(公告)日：2005-04-07
申请号：US10707112
申请日：2003-11-21
申请人： Ming-Hung Lo , Liang-Pin Chou , Chun-Ming Wang , Li-Fu Chen
发明人： Ming-Hung Lo , Liang-Pin Chou , Chun-Ming Wang , Li-Fu Chen
IPC分类号： H01L21/4763 , H01L21/768
CPC分类号： H01L21/76834 , H01L21/76832
摘要： A method of fabricating a passivation layer is provided. A substrate with a plurality of device structures and at least an interconnect thereon is provided. A patterned metallic layer is formed over the interconnection layer. A plasma-enhanced chemical vapor deposition process is performed to form a first passivation over the metallic layer such that the processing pressure is higher (and/or the processing power is lower) than the pressure (the power) used in prior art. A moisture impermeable second passivation is formed over the first passivation layer. With the first passivation formed in a higher processing pressure (and/or lower processing power), damages to metallic layers or devices due to plasma bombardment is minimized.
摘要翻译：提供一种制造钝化层的方法。提供具有多个器件结构并且至少在其上的互连的衬底。在互连层上形成图案化的金属层。执行等离子体增强化学气相沉积工艺以在金属层上形成第一钝化，使得处理压力比现有技术中使用的压力（功率）更高（和/或处理能力较低）。在第一钝化层上形成不透水的第二钝化。由于在较高的处理压力（和/或较低的处理能力）下形成的第一钝化，由于等离子体轰击而对金属层或器件造成的损害最小化。

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