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31. 发明申请

US20070196748A1 Process of making a semiconductor device using multiple antireflective materials 失效
标题翻译：制造使用多种抗反射材料的半导体器件的工艺
公开(公告)号：US20070196748A1
公开(公告)日：2007-08-23
申请号：US11356027
申请日：2006-02-17
申请人： Marie Angelopoulos , Katherina Babich , Sean Burns , Richard Conti , Allen Gabor , Scott Halle , Arpan Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina Babich , Sean Burns , Richard Conti , Allen Gabor , Scott Halle , Arpan Mahorowala , Dirk Pfeiffer
IPC分类号： G03G13/00
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译：一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

32. 发明授权

US07968270B2 Process of making a semiconductor device using multiple antireflective materials 有权
标题翻译：制造使用多种抗反射材料的半导体器件的工艺
公开(公告)号：US07968270B2
公开(公告)日：2011-06-28
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/11 , G03F7/40
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译：一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

33. 发明申请

US20090061355A1 PROCESS OF MAKING A LITHOGRAPHIC STRUCTURE USING ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用抗反射材料制作光刻结构的方法
公开(公告)号：US20090061355A1
公开(公告)日：2009-03-05
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/004 , C08G77/04 , G03F7/20 , B32B27/00
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

34. 发明申请

US20080311508A1 PROCESS OF MAKING A SEMICONDUCTOR DEVICE USING MULTIPLE ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用多种抗反射材料制备半导体器件的工艺
公开(公告)号：US20080311508A1
公开(公告)日：2008-12-18
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/20 , C23C16/00 , G03C1/735 , G03C1/73
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译：一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

35. 发明申请

US20070015082A1 Process of making a lithographic structure using antireflective materials 审中-公开
标题翻译：使用抗反射材料制作平版印刷结构的工艺
公开(公告)号：US20070015082A1
公开(公告)日：2007-01-18
申请号：US11180787
申请日：2005-07-14
申请人： Marie Angelopoulos , Katherina Babich , Sean Burns , Allen Gabor , Scott Halle , Arpan Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina Babich , Sean Burns , Allen Gabor , Scott Halle , Arpan Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/26 , G03C5/00
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO 2主链的交联聚合物，发色团和对193nm或157nm辐射基本透明的透明有机基团。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

36. 发明授权

US08609322B2 Process of making a lithographic structure using antireflective materials 有权
标题翻译：使用抗反射材料制作平版印刷结构的工艺
公开(公告)号：US08609322B2
公开(公告)日：2013-12-17
申请号：US13617634
申请日：2012-09-14
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/075
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料和设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

37. 发明授权

US07485573B2 Process of making a semiconductor device using multiple antireflective materials 失效
标题翻译：制造使用多种抗反射材料的半导体器件的工艺
公开(公告)号：US07485573B2
公开(公告)日：2009-02-03
申请号：US11356027
申请日：2006-02-17
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： H01L21/4763
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译：一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

38. 发明授权

US07902323B1 Methods of fabricating plasticized, antiplasticized and crystalline conducting polymers and precursors thereof 有权
标题翻译：制造增塑的，抗增塑的和结晶的导电聚合物及其前体的方法
公开(公告)号：US07902323B1
公开(公告)日：2011-03-08
申请号：US09346353
申请日：1999-07-02
申请人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
发明人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
IPC分类号： C08J3/11 , C08J3/18 , C08G73/00 , H01B1/12
CPC分类号： H01B1/128 , C08G61/12
摘要： Methods of forming materials containing precursors to electrically conductive polymers and electrically conductive polymers are described which have a high degree of crystallinity. The high degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. High levels of electrical conductivity are achieved in in the electrically conductive materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriented film which has isotropic electrical conductivity. In the preferred embodiment, additives are added to a solution containing a solvent and the precursor or electrically conductive polymer. The additives are preferably plasticizer of diluents. As the solvent is removed the material dries and contains a higher degree of crystallinity than in the absence of the additive.
摘要翻译：描述了形成具有高结晶度的导电聚合物和导电聚合物前体的材料的方法。通过在允许它们彼此结合以形成结晶状态的聚合物分子提供高度迁移率的条件下制备材料来实现高结晶度。在导电材料中实现高水平的导电性而不使材料拉伸定向。与具有各向同性电导率的拉伸取向膜相比，增强的导电性是各向同性的。在优选的实施方案中，将添加剂加入到含有溶剂和前体或导电聚合物的溶液中。添加剂优选稀释剂的增塑剂。当除去溶剂时，与没有添加剂相比，材料干燥并含有更高的结晶度。

39. 发明授权

US06746770B1 Electrically conductive and abrasion/scratch resistant polymeric materials, method of fabrication thereof and uses thereof 失效
标题翻译：导电和耐磨损/耐刮擦的聚合材料，其制造方法及其用途
公开(公告)号：US06746770B1
公开(公告)日：2004-06-08
申请号：US08476141
申请日：1995-06-07
申请人： Ali Afzali-Ardakani , Marie Angelopoulos , Jack Alvin Dickerson , Thomas Baird Pillsbury , Karl Joseph Puttlitz , Jane Margaret Shaw , Jeffrey Donald Gelorme
发明人： Ali Afzali-Ardakani , Marie Angelopoulos , Jack Alvin Dickerson , Thomas Baird Pillsbury , Karl Joseph Puttlitz , Jane Margaret Shaw , Jeffrey Donald Gelorme
IPC分类号： B32B904
CPC分类号： H05K9/0096 , C08G61/12 , H01B1/125 , H01J29/868 , H01L23/49894 , H01L23/60 , H01L33/42 , H01L2924/0002 , H01L2924/12044 , Y10T428/31504 , Y10T428/31511 , Y10T428/31663 , Y10T428/31667 , Y10T428/31797 , Y10T428/31855 , Y10T428/31909 , Y10T428/31924 , Y10T428/31931 , H01L2924/00
摘要： Electrically conductive and abrasion resistant polymeric compositions, methods of fabrication thereof and uses thereof are described. Admixtures of abrasion resistant materials and electrically conductive polymeric materials are formed. Many of these admixtures arc light transmitting and can be used as an abrasion resistant light transmitting electrostatic discharge layers. The light transmitting discharge layer is useful as a surface coating for visual displays such as CRT screens to avoid electrostatic accumulation of dust and scratching. The compositions can be admixtures of abrasion resistant silicones, polysiloxanes, acrylates, epoxies, methacrylates, epoxyacrylates, epoxymethacrylates, styrenes and electrically conductive polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenevinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophenes, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The compositions can be a layer or an electrically conductive polymer with an abrasion resistant layer thereover.
摘要翻译：描述了导电和耐磨聚合物组合物，其制造方法及其用途。形成耐磨材料和导电聚合材料的外加剂。这些混合物中的许多都是透光的，可以用作耐磨光透射静电放电层。透光放电层可用作诸如CRT屏幕的视觉显示器的表面涂层，以避免灰尘和划痕的静电积累。组合物可以是耐磨硅氧烷，聚硅氧烷，丙烯酸酯，环氧树脂，甲基丙烯酸酯，环氧丙烯酸酯，环氧甲基丙烯酸酯，苯乙烯和选自取代和未取代的聚苯胺的聚合物，聚对亚苯基乙烯基，取代和未取代的聚噻吩的取代和未取代的聚对 - 取代和未取代的聚吡咯，取代和未取代的聚硒吩，可溶性前体形成的聚乙酰胺，其组合以及与其它聚合物的共混物。组合物可以是其上具有耐磨层的层或导电聚合物。

40. 发明授权

US06436605B1 Plasma resistant composition and use thereof 失效
标题翻译：等离子体组合物及其用途
公开(公告)号：US06436605B1
公开(公告)日：2002-08-20
申请号：US09350939
申请日：1999-07-12
申请人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
发明人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0043
摘要： The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.
摘要翻译：通过向辐射敏感聚合物中加入至少一种有机金属化合物来增强辐射敏感抗蚀剂组合物的反应离子蚀刻电阻。抗蚀剂组合物可以被图案化并用作用于图案化下层的掩模。

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