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    • 39. 发明授权
    • Method for fabricating nanoscale patterns on a surface
    • 在表面上制造纳米尺度图案的方法
    • US06398940B1
    • 2002-06-04
    • US09497881
    • 2000-02-04
    • Quijin ChiJingdong ZhangJens Enevold Thaulov AndersenJens UlstrupEsben Peter Friis
    • Quijin ChiJingdong ZhangJens Enevold Thaulov AndersenJens UlstrupEsben Peter Friis
    • C25F302
    • B23H3/00B82Y10/00B82Y30/00G01Q80/00G11B9/14G11B9/1463Y10S977/856
    • A novel method to fabricate nanoscale pits on Au(111) surfaces in contact with aqueous solution is claimed. The method uses in situ electrochemical scanning tunnelling microscopy with independent electrochemical substrate and tip potential control and very small bias voltages. This is significantly different from other documented methods, which mostly apply high and short voltage pulses. The most important advantages of the present method are that the dimensions and positions of the pits can be controlled with high precision in aqueous environment so that nanopatterns of the pits can be designed, and that the operations are simple and require no instrumental accessories. Parameters, which control the pit formation and size, have been systematically characterized and show that the primary controlling parameter is the bias voltage. A mechanism based on local surface reconstruction induced by electronic contact between tip and substrate is in keeping with the overall patterns for pit formation. A range of potential applications is proposed.
    • 要求在与水溶液接触的Au(111)表面上制造纳米级凹坑的新方法。 该方法使用原位电化学扫描隧道显微镜,具有独立的电化学底物和尖端电位控制和非常小的偏置电压。 这与其他文献记载的方法有很大的不同,它们主要应用高压和短压脉冲。 本方法的最重要的优点是可以在水性环境中以高精度控制凹坑的尺寸和位置,从而可以设计凹坑的纳米图案,操作简单,不需要仪器附件。 控制坑形成和尺寸的参数已经被系统地表征,并且表明主要控制参数是偏置电压。 基于尖端和衬底之间的电子接触引起的局部表面重建的机理与凹坑形成的整体图案保持一致。 提出了一系列潜在的应用。