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31. 发明授权

US08080463B2 Semiconductor device manufacturing method and silicon oxide film forming method 有权
标题翻译：半导体器件制造方法和氧化硅膜形成方法
公开(公告)号：US08080463B2
公开(公告)日：2011-12-20
申请号：US12691483
申请日：2010-01-21
申请人： Kazuaki Iwasawa , Takeshi Hoshi , Keisuke Nakazawa , Shogo Matsuo , Takashi Nakao , Ryu Kato , Tetsuya Kai , Katsuyuki Sekine
发明人： Kazuaki Iwasawa , Takeshi Hoshi , Keisuke Nakazawa , Shogo Matsuo , Takashi Nakao , Ryu Kato , Tetsuya Kai , Katsuyuki Sekine
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.
摘要翻译：半导体器件制造方法在半导体衬底中具有形成元件隔离沟槽，在元件隔离沟槽的内部形成硅化合物膜，以便嵌入元件隔离沟槽，在第一温度下进行第一氧化处理以使表面所述硅化合物膜能够通过氧化剂和杂质而不允许含有硅原子的挥发性物质通过的挥发性物质排放防止层，并且在比所述第一温度高的第二温度下进行第二氧化处理温度以在元件隔离槽内形成被覆氧化硅膜。

32. 发明申请

US20070212894A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070212894A1
公开(公告)日：2007-09-13
申请号：US11526727
申请日：2006-09-26
申请人： Keisuke Nakazawa
发明人： Keisuke Nakazawa
IPC分类号： H01L21/31
CPC分类号： H01L21/3125 , C23C18/122 , C23C18/1279 , H01L21/02087 , H01L21/0209 , H01L21/02164 , H01L21/0217 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/31133 , H01L21/316 , H01L21/67051 , H01L21/6715 , H01L21/76801 , H01L21/76826 , H01L21/76828
摘要： A method for manufacturing a semiconductor device is provided, which includes feeding a coating liquid comprising a silicon-containing compound dissolved in a solvent onto a semiconductor substrate, revolving the semiconductor substrate to form a coated film containing the silicon-containing compound, feeding a rinsing liquid at least partially comprising α-pinene onto the underside of the semiconductor substrate to perform back-rinsing and washing of the underside of the semiconductor substrate, drying the semiconductor substrate that has been back-rinsed to remove the rinsing liquid, and heat-treating the semiconductor substrate to remove the solvent from the coated film to obtain an insulating film containing the silicon-containing compound.
摘要翻译：提供一种制造半导体器件的方法，其包括将包含溶解在溶剂中的含硅化合物的涂布液进料到半导体衬底上，旋转半导体衬底以形成含有含硅化合物的涂膜，至少部分地将α-蒎烯包含在半导体衬底的下侧上的液体，以对半导体衬底的下侧进行反冲洗和洗涤，干燥已经被冲洗的半导体衬底以除去冲洗液，并进行热处理半导体衬底以从涂覆膜中除去溶剂，以获得含有含硅化合物的绝缘膜。

33. 发明授权

US08592939B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08592939B2
公开(公告)日：2013-11-26
申请号：US13233771
申请日：2011-09-15
申请人： Keisuke Nakazawa
发明人： Keisuke Nakazawa
IPC分类号： H01L21/70
CPC分类号： H01L27/11529
摘要： In accordance with an embodiment, a semiconductor device includes a functional film, first and second trenches, and first and second insulating films. The functional film comprises first and second areas. The first trench is provided in the first area of the functional film and has a first width. The second trench is provided in the second area of the functional film and has a second width larger than the first width. The first insulating film is formed from a polymeric material as a precursor to fill the first trench. The second insulating film has a diameter larger than the first width and is formed from particulates and the polymeric material as precursors. The particulates fill the second trench. The polymeric material fills spaces between the particulates in the second trench and also fills gaps between the particulates and the second trench.
摘要翻译：根据实施例，半导体器件包括功能膜，第一和第二沟槽以及第一和第二绝缘膜。功能膜包括第一和第二区域。第一沟槽设置在功能膜的第一区域中并且具有第一宽度。第二沟槽设置在功能膜的第二区域中，并且具有大于第一宽度的第二宽度。第一绝缘膜由作为填充第一沟槽的前体的聚合材料形成。第二绝缘膜具有大于第一宽度的直径，并且由颗粒和聚合物材料作为前体形成。颗粒填充第二沟槽。聚合物材料填充第二沟槽中的微粒之间的空间，并填充微粒和第二沟槽之间的间隙。

34. 发明授权

US08329553B2 Method for manufacturing semiconductor device and NAND-type flash memory 有权
标题翻译：制造半导体器件和NAND型闪存的方法
公开(公告)号：US08329553B2
公开(公告)日：2012-12-11
申请号：US12730099
申请日：2010-03-23
申请人： Shogo Matsuo , Takeshi Hoshi , Keisuke Nakazawa , Kazuaki Iwasawa
发明人： Shogo Matsuo , Takeshi Hoshi , Keisuke Nakazawa , Kazuaki Iwasawa
IPC分类号： H01L21/76
CPC分类号： H01L21/76229 , H01L21/02164 , H01L21/02323 , H01L21/02343 , H01L21/3081 , H01L21/3124 , H01L21/3125 , H01L21/316 , H01L27/11531 , H01L27/11543 , H01L27/11548
摘要： A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.
摘要翻译：半导体器件的制造方法在半导体衬底上形成具有至少两种纵横比的多个沟槽，用包含硅的涂层材料填充多个沟槽，在沟槽的一部分中在涂层材料上形成掩模在填充有涂层材料的多个沟槽中，将用于加速氧化涂层材料的离子注入到未形成掩模的沟槽中的涂层材料中，通过氧化其中离子的涂层材料形成第一绝缘膜在移除掩模之后从沟槽的一部分去除涂层材料，并在去除涂层材料的沟槽部分中形成第二绝缘膜。

35. 发明授权

US07781341B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07781341B2
公开(公告)日：2010-08-24
申请号：US11526727
申请日：2006-09-26
申请人： Keisuke Nakazawa
发明人： Keisuke Nakazawa
IPC分类号： H01L21/302
CPC分类号： H01L21/3125 , C23C18/122 , C23C18/1279 , H01L21/02087 , H01L21/0209 , H01L21/02164 , H01L21/0217 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/31133 , H01L21/316 , H01L21/67051 , H01L21/6715 , H01L21/76801 , H01L21/76826 , H01L21/76828
摘要： A method for manufacturing a semiconductor device is provided, which includes feeding a coating liquid comprising a silicon-containing compound dissolved in a solvent onto a semiconductor substrate, revolving the semiconductor substrate to form a coated film containing the silicon-containing compound, feeding a rinsing liquid at least partially comprising α-pinene onto the underside of the semiconductor substrate to perform back-rinsing and washing of the underside of the semiconductor substrate, drying the semiconductor substrate that has been back-rinsed to remove the rinsing liquid, and heat-treating the semiconductor substrate to remove the solvent from the coated film to obtain an insulating film containing the silicon-containing compound.
摘要翻译：提供一种制造半导体器件的方法，其包括将包含溶解在溶剂中的含硅化合物的涂布液进料到半导体衬底上，旋转半导体衬底以形成含有含硅化合物的涂膜，至少部分地包含α-蒎烯的液体到半导体衬底的下侧，以对半导体衬底的下侧进行反冲洗和洗涤，干燥已经被冲洗的半导体衬底以去除冲洗液体，并进行热处理半导体衬底以从涂覆膜中除去溶剂，以获得含有含硅化合物的绝缘膜。

36. 发明申请

US20050224851A1 Semiconductor device and method for manufacturing thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050224851A1
公开(公告)日：2005-10-13
申请号：US10865812
申请日：2004-06-14
申请人： Keisuke Nakazawa
发明人： Keisuke Nakazawa
IPC分类号： H01L21/3205 , H01L21/02 , H01L21/8246 , H01L23/52 , H01L27/105 , H01L29/76
CPC分类号： H01L28/75 , H01L28/55 , H01L28/65
摘要： Disclosed in a semiconductor device comprising a semiconductor substrate, and a ferroelectric layer provided above the semiconductor substrate and sandwiched between a lower electrode and an upper electrode, the lower electrode comprising a strontium ruthenate film having a thickness of 2 nm or less.
摘要翻译：公开在包括半导体衬底和设置在半导体衬底之上并夹在下电极和上电极之间的铁电层的半导体器件中，下电极包括厚度为2nm或更小的钌酸锶膜。

37. 发明授权

US06709791B1 Halftone phase shift photomask and blanks for halftone phase shift photomask for it and pattern forming method using this 有权
标题翻译：半色调相移光掩模和用于其的半色调相移光掩模的坯料以及使用其的图案形成方法
公开(公告)号：US06709791B1
公开(公告)日：2004-03-23
申请号：US09807276
申请日：2001-04-10
申请人： Hiroshi Mohri , Toshiaki Motonaga , Chiaki Hatsuta , Norihito Ito , Naoya Hayashi , Toshio Onodera , Takahiro Matsuo , Toru Ogawa , Keisuke Nakazawa
发明人： Hiroshi Mohri , Toshiaki Motonaga , Chiaki Hatsuta , Norihito Ito , Naoya Hayashi , Toshio Onodera , Takahiro Matsuo , Toru Ogawa , Keisuke Nakazawa
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/26 , G03F1/34
摘要： The invention relates to a halftone phase shift photomask whose transmittance and phase angle remain unchanged even when irradiated with an excimer laser used for exposure over an extended period of time, and a blank therefor, and provides a halftone phase shift mask 108 comprising a pattern of halftone phase shift film 102 containing at least chromium and fluorine on a transparent substrate 101, wherein optical characteristic changes upon irradiation with an exposure excimer laser have been reduced by patterning a film irradiated with light 109 having a wavelength substantially absorbed by halftone phase shift film 102.
摘要翻译：本发明涉及一种半色调相移光掩模，其透射率和相位角即使在用于长时间曝光的受激准分子激光器照射时也保持不变，并且提供了一种空白，并提供了一种半色调相移掩模108，其包括在透明基板101上含有至少铬和氟的半色调相移膜102，其中通过曝光准分子激光器照射时的光学特性变化已经减少了通过半色调相移膜102基本吸收的波长的光109照射的图案。

38. 发明授权

US09628665B2 Information processing system, information processing apparatus, information processing method, and recording medium 有权
公开(公告)号：US09628665B2
公开(公告)日：2017-04-18
申请号：US14942234
申请日：2015-11-16
申请人： Daisuke Okada , Hiroya Uruta , Yuka Saito , Akiko Kitayama , Yuto Shibata , Chan Gu , Keisuke Nakazawa
发明人： Daisuke Okada , Hiroya Uruta , Yuka Saito , Akiko Kitayama , Yuto Shibata , Chan Gu , Keisuke Nakazawa
IPC分类号： H04N1/04 , H04N1/32 , G06Q10/00 , H04N1/00
CPC分类号： H04N1/32368 , G06Q10/00 , H04N1/00477 , H04N2201/0013 , H04N2201/0093
摘要： An information processing system includes a first information processing apparatus and a second information processing apparatus. The first information processing apparatus includes an acquisition part creating a first information request, a first transmitter transmitting the first information request to the second information processing apparatus, a first receiver receiving the first information from the second information processing apparatus, a display controller controlling displaying the first information, and a first storage storing second information, the display controller controlling displaying the second information when the second information is stored in the first storage. The second information processing apparatus includes a second storage storing the first information, a second receiver receiving the first information request, an extracting part extracting the first information from the second storage in response to the first information request, and a second transmitter transmitting the first information to the first information processing apparatus.

39. 发明授权

US08629035B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08629035B2
公开(公告)日：2014-01-14
申请号：US13409401
申请日：2012-03-01
申请人： Keisuke Nakazawa
发明人： Keisuke Nakazawa
IPC分类号： H01L21/764
CPC分类号： H01L21/764
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming an isolation trench in a substrate, and forming an amorphous layer on a sidewall surface of the isolation trench. The method further includes forming a sacrificial layer in the isolation trench via the amorphous layer, and forming an air gap layer on the sacrificial layer. The method further includes forming an air gap in the isolation trench under the air gap layer by removing the sacrificial layer after forming the air gap layer.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在衬底中形成隔离沟槽，以及在隔离沟槽的侧壁表面上形成非晶层。该方法还包括经由非晶层在隔离沟槽中形成牺牲层，并在牺牲层上形成气隙层。该方法还包括在形成气隙层之后通过去除牺牲层在气隙层之下的隔离沟槽中形成气隙。

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