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31. 发明申请

US20050029629A1 Substrate for electronic device, electronic device and methods of manufacturing same 有权
标题翻译：电子设备基板，电子设备及其制造方法
公开(公告)号：US20050029629A1
公开(公告)日：2005-02-10
申请号：US10817907
申请日：2004-04-06
申请人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Hisatoshi Saitou , Hidenori Abe
IPC分类号： H01L21/28 , B06B1/06 , H01L21/283 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/319 , H03H3/02 , H03H9/02 , H03H9/17 , H01L29/00 , H01L21/44 , B05D3/06 , H01L31/036 , H01L21/4763
CPC分类号： H03H9/175 , B06B1/0644 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/176
摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.
摘要翻译：电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

32. 发明授权

US5955213A Ferroelectric thin film, electric device, and method for preparing ferroelectric thin film 失效
标题翻译：铁电薄膜，电子器件和制备铁电薄膜的方法
公开(公告)号：US5955213A
公开(公告)日：1999-09-21
申请号：US524809
申请日：1995-09-07
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： C30B29/22 , C23C14/00 , C23C14/02 , C23C14/08 , C30B23/02 , H01G4/33 , H01L21/283 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , B32B17/00
CPC分类号： C23C14/08 , C23C14/0021 , C23C14/024 , C30B23/02 , C30B29/22
摘要： On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.
摘要翻译：在诸如硅的单晶衬底上，主要由稀土元素（包括钪和钇）组成的具有YMnO 3六方晶体结构的铁电薄膜，锰和氧以及平行于衬底表面取向的c面是形成，优选地具有外延氧化膜或导电外延膜之间。适用于具有MFIS和MFMIS结构的门型非易失性存储器件。

33. 发明授权

US4050963A Method of quenching large-diameter thin-wall metal pipe 失效
标题翻译：大直径薄壁金属管淬火方法
公开(公告)号：US4050963A
公开(公告)日：1977-09-27
申请号：US652576
申请日：1976-01-26
申请人： Kazuo Kunioka , Yutaka Mihara , Takao Noguchi
发明人： Kazuo Kunioka , Yutaka Mihara , Takao Noguchi
IPC分类号： C21D1/18 , C21D9/08 , C21D11/00
CPC分类号： C21D9/085
摘要： A method of quenching a large-diameter thin-walled metal pipe includes the steps of moving the metal pipe through a heating zone and passing the pipe through a cooling zone following passage of the pipe through the heating zone. The cooling zone includes a plurality of nozzles for spraying a cooling liquid onto the pipe from the nozzles, so as to quench the pipe. The process steps further include detecting the amount of strain on the outer periphery of the quenched pipe at the rear end of the cooling zone, as seen in the direction of movement of the pipe, so as to obtain a deviation of a detected value from a preset value, and adjusting the amount of cooling liquid sprayed onto the pipe from the nozzles in accordance with the amount of deviation from the preset value, so that the adjusted cooling water spray controls the deviation of pipe emerging from the cooling zone, for example, reduces the eccentricity of a circular pipe.
摘要翻译：大直径薄壁金属管淬火的方法包括以下步骤：使金属管通过加热区，并且在通过加热区之后使管通过冷却区。冷却区包括用于从喷嘴将冷却液喷射到管上的多个喷嘴，以使管道骤冷。处理步骤还包括检测在冷却区的后端处的淬火管的外周上的应变量，如在管的移动方向上看到的，以便获得检测值与预设值，并根据与预设值的偏差量调整从喷嘴喷射到管道上的冷却液的量，使得调节后的冷却水喷雾控制从冷却区出来的管的偏离，例如，减少圆管的偏心率。

34. 发明授权

US07042090B2 Electronic device and method of fabricating the same 有权
标题翻译：电子装置及其制造方法
公开(公告)号：US07042090B2
公开(公告)日：2006-05-09
申请号：US10786776
申请日：2004-02-24
申请人： Takao Noguchi , Hisatoshi Saito
发明人： Takao Noguchi , Hisatoshi Saito
IPC分类号： H01L23/48
CPC分类号： H03H9/02094 , H01L29/152 , H01L29/2003 , H01L2924/0002 , H03H3/02 , H03H9/174 , H03H9/175 , H01L2924/00
摘要： An electronic device includes a substrate, a lower conductive film formed on the substrate and a functional film formed on the lower conductive film. In the present invention, an adhesion of the lower conductive film on the side of the substrate is greater than or equal to 0.1 N/cm. The electronic device according to this invention exhibits high mechanical strength that makes it very reliable. This is because the invention prevents the physical exfoliation of the lower conductive film that is apt to occur during or after fabrication of the electronic device when the adhesion of the lower conductive film is lower than 0.1 N/cm.
摘要翻译：电子设备包括基板，形成在基板上的下导电膜和形成在下导电膜上的功能膜。在本发明中，下导电膜在基板一侧的粘合力大于或等于0.1N / cm。根据本发明的电子设备表现出高机械强度，使其非常可靠。这是因为，当下导电膜的粘合力低于0.1N / cm时，本发明防止在电子器件制造期间或之后容易发生的下导电膜的物理剥离。

35. 发明申请

US20050191792A1 Component for fabricating an electronic device and method of fabricating an electronic device 有权
标题翻译：用于制造电子装置的部件和制造电子装置的方法
公开(公告)号：US20050191792A1
公开(公告)日：2005-09-01
申请号：US11028891
申请日：2005-01-03
申请人： Takao Noguchi , Hisatoshi Saito
发明人： Takao Noguchi , Hisatoshi Saito
IPC分类号： H01L41/09 , H01L21/02 , H01L21/50 , H01L23/02 , H01L41/047 , H01L41/08 , H01L41/187 , H01L41/22 , H01L41/313 , H03H3/02 , H03H9/02 , H03H9/17
CPC分类号： H03H9/175 , H01L41/0477 , H01L41/316 , H03H3/02 , H03H9/02094
摘要： A component for fabricating the electronic device comprises a substrate and a conductive film provided on the substrate, in which the adhesion of the conductive film to the substrate is not greater than 0.1 N/cm. The adhesion of the conductive film to the substrate is weak enough to enable the conductive film to be readily peeled from the substrate. This makes it possible to form a component on a substrate other than the substrate used during film formation, thereby greatly increasing the degree of product configuration freedom. If the adhesion of a lower conductive film on the substrate side is made to be not greater than 0.04 N/cm, it becomes very easy to peel the conductive film from the substrate.
摘要翻译：用于制造电子器件的部件包括衬底和设置在衬底上的导电膜，其中导电膜与衬底的粘合力不大于0.1N / cm。导电膜对基片的粘合力足够弱以使导电膜容易从基片上剥离。这使得可以在成膜之前使用的基板以外的基板上形成部件，从而大大提高产品配置自由度。如果将基板侧的下导电膜的粘合度设定为不大于0.04N / cm，则很容易从基板剥离导电膜。

36. 发明授权

US06709776B2 Multilayer thin film and its fabrication process as well as electron device 有权
标题翻译：多层薄膜及其制造工艺以及电子器件
公开(公告)号：US06709776B2
公开(公告)日：2004-03-23
申请号：US09842805
申请日：2001-04-27
申请人： Takao Noguchi , Yoshihiko Yano , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Yoshihiko Yano , Hisatoshi Saitou , Hidenori Abe
IPC分类号： B32B900
CPC分类号： C30B23/02 , C30B25/02 , C30B29/22 , Y10T428/2495
摘要： The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.
摘要翻译：本发明的目的是提供一种多层薄膜，其包括在Si衬底上取向的优先（001）铁电薄膜，其制造工艺和电子器件。为了实现这些目的，本发明提供了一种通过外延生长在基板上形成的多层薄膜，其包括由氧化物和铁电薄膜构成的缓冲层，金属薄膜和氧化物薄膜之间依次形成缓冲层和铁电薄膜，其制造工艺和电子器件。

37. 发明授权

US06387712B1 Process for preparing ferroelectric thin films 有权
标题翻译：制备铁电薄膜的工艺
公开(公告)号：US06387712B1
公开(公告)日：2002-05-14
申请号：US09453505
申请日：1999-12-03
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： H01L2100
CPC分类号： C23C14/08 , C23C14/0026 , H01L21/31691 , H01L29/516 , Y10S438/909
摘要： In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8≦(Pb+Rn)/Ti≦1.3 and 0.5≦Pb/(Pb+Rn)≦0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.
摘要翻译：在包含在基板上形成的铁电薄膜的薄膜结构体中，铁电薄膜含有原子比为0.8 <=（Pb + Rn）/ 2的稀土元素（Rn），Pb，Ti和O。 Ti <= 1.3和0.5 <= Pb /（Pb + Rn）<= 0.99，具有钙钛矿型晶体结构，为（001）单向取向或（001）取向和（100）取向的混合物。铁电薄膜可以形成在硅（100）衬底上，通常通过在真空室中蒸发氧化铅和TiO x，同时在其中引入氧化气体。

38. 发明授权

US06198208B1 Thin film piezoelectric device 有权
标题翻译：薄膜压电元件
公开(公告)号：US06198208B1
公开(公告)日：2001-03-06
申请号：US09558586
申请日：2000-04-26
申请人： Yoshihiko Yano , Takao Noguchi , Hidenori Abe , Hisatoshi Saitou
发明人： Yoshihiko Yano , Takao Noguchi , Hidenori Abe , Hisatoshi Saitou
IPC分类号： H01L4104
CPC分类号： H03H9/176 , H01L41/1876 , H01L41/316 , H03H3/04 , H03H9/0211 , H03H9/174 , Y10T428/3171
摘要： A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.
摘要翻译：薄膜压电元件在金属薄膜上的硅衬底（2）和PZT薄膜（5）上具有外延金属薄膜（4），PZT薄膜（5）具有Ti /（Ti + Zr ）原子比在0.65和0.90之间。实现了具有极宽带的薄膜体声波谐振器。

39. 发明授权

US6096434A Film structure, electronic device, recording medium, and method for forming conductive oxide thin films 失效
标题翻译：膜结构，电子器件，记录介质和形成导电氧化物薄膜的方法
公开(公告)号：US6096434A
公开(公告)日：2000-08-01
申请号：US44227
申请日：1998-03-19
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： H01L21/28 , C30B23/02 , C30B29/22 , G01Q60/38 , G01Q80/00 , G11B9/02 , G11B9/14 , H01G7/06 , H01L21/02 , H01L21/203 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/14 , H01L29/788 , H01L29/792 , H01L37/02 , H01L41/083 , H01L41/09 , B32B9/04
CPC分类号： H01L21/31691 , C30B23/002 , C30B23/02 , C30B29/16 , C30B29/22 , H01L28/56
摘要： A film structure includes a conductive oxide thin film formed on a substrate having a silicon (100) face at its surface. The conductive oxide thin film is an epitaxial film composed mainly of strontium ruthenate. At least 80% of the surface of the conductive oxide thin film has a Rz of up to 10 nm. On the conductive oxide thin film having excellent surface flatness and crystallinity, a ferroelectric thin film, typically of lead zirconate titanate, having surface flatness and spontaneous polarization can be formed.
摘要翻译：膜结构包括在其表面具有硅（100）面的基板上形成的导电氧化物薄膜。导电氧化物薄膜是主要由钌酸锶构成的外延膜。至少80％的导电氧化物薄膜的表面具有高达10nm的Rz。在具有优异的表面平坦度和结晶度的导电氧化物薄膜上，可以形成具有表面平坦度和自发极化的通常为锆钛酸铅的铁电薄膜。

40. 发明授权

US6045626A Substrate structures for electronic devices 失效
标题翻译：电子设备基板结构
公开(公告)号：US6045626A
公开(公告)日：2000-04-04
申请号：US102568
申请日：1998-06-23
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/365 , H01L33/12 , H01L33/16 , H01L33/32 , H01L33/34 , H01L39/24
CPC分类号： H01L33/007 , H01L41/0815 , H01L41/316 , H01L41/319 , H01L39/2461
摘要： A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin film composed mainly of a rare earth oxide and/or zirconium oxide, an AMnO.sub.3 thin film composed mainly of rare earth element A, Mn and O and having a hexagonal YMnO.sub.3 type structure, an AlO.sub.x thin film composed mainly of Al and O, and a NaCl type nitride thin film composed mainly of titanium nitride, niobium nitride, tantalum nitride or zirconium nitride. The surface layer is an epitaxial film containing a wurtzite type oxide and/or nitride. The surface layer can serve as a functional film such as a semiconductor film or an underlying film therefor, and the substrate structure is useful for the manufacture of electronic devices.
摘要翻译：衬底结构包括单晶Si衬底和表面层，其间具有交错的缓冲层。缓冲层包括主要由稀土氧化物和/或氧化锆组成的R-Zr族氧化物薄膜中的至少一种，主要由稀土元素A，Mn和O组成的具有六方晶YMnO 3型的AMnO 3薄膜主要由Al和O组成的AlOx薄膜和主要由氮化钛，氮化铌，氮化钽或氮化锆组成的NaCl型氮化物薄膜。表面层是含有纤锌矿型氧化物和/或氮化物的外延膜。表面层可以用作诸如半导体膜或其下面的膜的功能膜，并且衬底结构对于电子器件的制造是有用的。

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