会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 31. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08871532B2
    • 2014-10-28
    • US13611801
    • 2012-09-12
    • Yasuhiro Ogawa
    • Yasuhiro Ogawa
    • H01L21/50H01L23/00
    • H01L24/97H01L2224/48247H01L2224/97H01L2924/1306H01L2924/13091H01L2924/15788H01L2924/181H01L2224/85H01L2924/00H01L2924/00012
    • A method of manufacturing a semiconductor device which solves a problem with a burn-in process where current and voltage are applied to finished semiconductor devices at high-temperature. The method uses an organic multilayer wiring substrate for a burn-in board in which power supply/grounding wiring is formed with microscopic openings formed at least almost all over the areas around sockets over the front or back surface of the substrate. For increasing the supply voltage and reference voltage for the burn-in board and other purposes, whenever possible, signal wires are disposed in inner wiring layers of the board. The related-art burn-in board which has a solid or blanket-type conductor pattern in an outermost layer as wiring for supply or reference voltage may cause an insulating protective film over the metal wiring to peel due to weak adhesion between the wiring and film when thermal cycles are repeated. The method solves the problem.
    • 一种制造半导体器件的方法,其解决了在高温下对成品半导体器件施加电流和电压的老化过程的问题。 该方法使用用于老化板的有机多层布线基板,其中电源/接地布线形成有在基板的前表面或后表面上的插座周围的至少几乎所有区域上形成的微小开口。 为了增加老化板的电源电压和参考电压以及其他目的,只要有可能,信号线就放在电路板的内部布线层中。 在最外层中具有固体或覆盖型导体图案的现有技术的老化板,作为用于供给或参考电压的布线可能导致金属布线之间的绝缘保护膜由于布线和膜之间的弱粘合而剥离 当热循环重复时。 该方法解决了这个问题。
    • 32. 发明授权
    • Substrate treatment device
    • 底物处理装置
    • US08652258B2
    • 2014-02-18
    • US13067117
    • 2011-05-10
    • Takashi YokogawaYasuhiro InokuchiKatsuhiko YamamotoYoshiaki HashibaYasuhiro Ogawa
    • Takashi YokogawaYasuhiro InokuchiKatsuhiko YamamotoYoshiaki HashibaYasuhiro Ogawa
    • C23C16/00C23C16/455C23C16/46C23C16/52H01L21/306
    • C23C16/24C23C16/22C30B25/08C30B25/14C30B29/06C30B35/00
    • It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
    • 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置,从而避免从喷嘴产生颗粒,并获得良好的蚀刻特性。 一种基板处理装置,其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜,所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室,设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛,设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口,所述气体供给系统包括: 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。
    • 35. 发明授权
    • Device for adjusting distance of cutting blade from workpiece sheet
    • 用于调整切割刀片与工件片材距离的装置
    • US06341548B1
    • 2002-01-29
    • US09292941
    • 1999-04-16
    • Shinichi HirahataYasuhiro OgawaTadanobu ChikamotoKazuyoshi Minaminaka
    • Shinichi HirahataYasuhiro OgawaTadanobu ChikamotoKazuyoshi Minaminaka
    • B26D308
    • B41J11/70B26D3/085B26D7/26B26D7/2628B26D2007/2678B26F1/3813Y10T83/0333Y10T83/0348Y10T83/9486Y10T83/949
    • A cutter shaft 40 provided with a cutter 43 as its lower tip is freely vertically movably disposed in a guide cylinder portion 17a of a cutter holder 17. A horizontal support body 47 is supported in a hollow case portion 17b. A large diameter first steel ball 45 and a small diameter second steel ball 46 are supported in the horizontal support body 47 separated by a suitable distance. The horizontal support body 47 supports the steel balls 45, 46 exposed from a lower end of the horizontal support body 47 but in a manner that prevents the steel balls 45, 46 from falling out of the horizontal support body 47. A cover body 48 is fixed on the upper surface of the horizontal support body 47 to prevent the first and second steel balls 45, 46 from moving in a vertical direction. The side edges of the horizontal support body 47 protrude from guide grooves 50a, 50b formed inside surfaces of the hollow case portion 17b. An adjustment screw screwingly engaged in a lid portion 17c presses downward on the cover body 48. On the other hand, resilient plate springs 54, 55 extending downward from the cover body 48 urge the cover body 48 upward.
    • 设置有作为其下端的切割器43的切割轴40可自由地垂直移动地设置在切割器保持器17的引导筒部分17a中。水平支撑体47被支撑在中空壳体部分17b中。 大直径的第一钢球45和小直径的第二钢球46被支撑在水平支撑体47中,该水平支撑体47被隔开合适的距离。 水平支撑体47支撑从水平支撑体47的下端露出的钢球45,46,但是能够防止钢球45,46从水平支撑体47掉出。盖体48为 固定在水平支撑体47的上表面上,以防止第一和第二钢球45,46在垂直方向上移动。 水平支撑体47的侧缘从形成在中空壳体部17b的内侧的导向槽50a,50b突出。 螺旋地接合在盖部分17c中的调节螺钉在盖体48上向下压。另一方面,从盖体48向下延伸的弹性板弹簧54,55向上推动盖体48。
    • 37. 发明授权
    • Secondary arc extinction device
    • 二次灭弧装置
    • US4464696A
    • 1984-08-07
    • US379958
    • 1982-05-19
    • Michio MasuiYasuhiro OgawaKunio Esumi
    • Michio MasuiYasuhiro OgawaKunio Esumi
    • H02H9/08H02H3/16
    • H02H9/08
    • A secondary arc extinction device in an electric power system including a bus bar; an electric power line connected to the bus bar; protective relaying means connected to the bus bar; a transformer having a primary winding and a secondary winding, one terminal of the primary winding being connected to the electric power line; first reactance means connected between the other terminal of the primary winding of the transformer and ground; second reactance means connected to the secondary winding of the transformer; and means for controlling the reactance of the second reactance means in response to the protective relaying means.
    • 一种包括母线的电力系统中的二次灭弧装置; 连接到母线的电力线; 连接到母线的保护继电装置; 具有初级绕组和次级绕组的变压器,所述初级绕组的一个端子连接到所述电力线; 连接在变压器的初级绕组的另一端和地之间的第一电抗装置; 连接到变压器的次级绕组的第二电抗装置; 以及用于响应于保护继电装置控制第二电抗装置的电抗的装置。
    • 38. 发明授权
    • Method of forming tantalum capacitor anodes and making the capacitors
    • 形成钽电容器阳极并制造电容器的方法
    • US4450049A
    • 1984-05-22
    • US359837
    • 1982-03-19
    • Koreaki NakataJiro UenoYasuhiro Ogawa
    • Koreaki NakataJiro UenoYasuhiro Ogawa
    • C25D11/26H01G9/00C25D5/44C25D3/66C25D11/00
    • H01G9/0032C25D11/26
    • A solid tantalum electrolytic capacitor is formed by a method comprisinganodizing a tantalum sintered body for substantial dielectric film growth in a substantially aqueous electrolyte;anodically treating said anodized tantalum body in at least one fused salt selected from the group of nitrates of alkali metals, nitrates of alkaline earth metals and nitrites of alkali metals with an applied voltage which is as high as possible but within a range wherein capacitance-decrease of the anode formed in the aqueous electrolyte is not caused; andanodically treating said fused salt-treated tantalum body in a substantially aqueous electrolyte with an applied voltage which is as high as possible but within a range wherein re-anodization will not occur, the temperature of said fused salt being in the range of 250.degree. C. to 350.degree. C.
    • 一种固体钽电解电容器通过一种方法形成,该方法包括阳极氧化钽烧结体,用于在基本上含水电解质中实质上电介质膜生长; 在选自碱金属的硝酸盐,碱土金属的硝酸盐和碱金属亚硝酸盐的至少一种熔融盐中,以尽可能高的施加电压但在电容降低的范围内对所述阳极氧化的钽体进行阳极氧化处理 不会引起在电解液中形成的阳极; 并且在施加电压尽可能高但在不再发生阳极氧化的范围内的基本上含水电解质中阳极处理所述熔融盐处理的钽体,所述熔融盐的温度在250℃的范围内 C.至350℃