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31. 发明授权

US08669586B2 Light emitting device, light emitting device package, and lighting system 有权
标题翻译：发光装置，发光装置封装和照明系统
公开(公告)号：US08669586B2
公开(公告)日：2014-03-11
申请号：US12908710
申请日：2010-10-20
申请人： Sung Min Hwang , Hyun Kyong Cho
发明人： Sung Min Hwang , Hyun Kyong Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/44 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device includes a first electrode, a first semiconductor layer, an active layer; a second semiconductor layer, and a second electrode. A current blocking layer is formed on a side surface of and has a width provided within the first semiconductor layer. The thickness and width of the current blocking layer is smaller than the thickness and width of the first semiconductor layer.
摘要翻译：发光器件包括第一电极，第一半导体层，有源层; 第二半导体层和第二电极。电流阻挡层形成在第一半导体层的侧表面上并具有宽度。电流阻挡层的厚度和宽度小于第一半导体层的厚度和宽度。

32. 发明授权

US08598607B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08598607B2
公开(公告)日：2013-12-03
申请号：US12731029
申请日：2010-03-24
申请人： Jong Wook Kim , Hyun Kyong Cho , Gyu Chul Yi , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
发明人： Jong Wook Kim , Hyun Kyong Cho , Gyu Chul Yi , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/32 , H01L33/36 , H01L33/60
摘要： A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

33. 发明授权

US08288786B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08288786B2
公开(公告)日：2012-10-16
申请号：US12614240
申请日：2009-11-06
申请人： Sung Min Hwang , Hyun Kyong Cho , Gyeong Geun Park
发明人： Sung Min Hwang , Hyun Kyong Cho , Gyeong Geun Park
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/145 , H01L33/60
摘要： A light emitting device according to an embodiment includes a second electrode layer comprising at least one projection part; at least one current blocking layer on the projection part of the second electrode layer; a second conductive type semiconductor layer on the second electrode layer and the current blocking layer; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the current blocking layer in a vertical direction.
摘要翻译：根据实施例的发光器件包括包括至少一个突出部分的第二电极层; 在所述第二电极层的所述突起部分上的至少一个电流阻挡层; 在第二电极层和电流阻挡层上的第二导电型半导体层; 在第二导电类型半导体层上的有源层; 在所述有源层上的第一导电类型半导体层; 以及在所述第一导电型半导体层上的第一电极层，所述第一电极层的至少一部分在垂直方向对应于所述电流阻挡层。

34. 发明申请

US20120012859A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120012859A1
公开(公告)日：2012-01-19
申请号：US13240927
申请日：2011-09-22
申请人： Sun Kyung KIM , Jin Wook Lee , Hyun Kyong Cho
发明人： Sun Kyung KIM , Jin Wook Lee , Hyun Kyong Cho
IPC分类号： H01L33/20 , H01L33/32
CPC分类号： H01L33/20 , H01L33/22 , H01L2933/0083
摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n，第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

35. 发明申请

US20120007118A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120007118A1
公开(公告)日：2012-01-12
申请号：US13178975
申请日：2011-07-08
申请人： Jeong Hyeon Choi , Hyun Kyong Cho , Bock Kee Min
发明人： Jeong Hyeon Choi , Hyun Kyong Cho , Bock Kee Min
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/44 , H01L33/62 , H01L33/64 , H01L2224/48091 , H01L2224/48247 , H01L2933/0016 , H01L2924/00014
摘要： A light emitting device may be provided that includes a conductive support member, a first conductive layer, a second conductive layer, an insulation layer between the first conductive layer and the second conductive layer, and a light emitting structure that includes a second semiconductor layer on the second conductive layer, a first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The first conductive layer may include at least one conductive via that passes through the second conductive layer, the second semiconductor layer and the active layer. A top surface of the at least one conductive via is provided into the first semiconductor layer. The insulation layer may substantially surround a side wall of the conductive via. The first surface of the first semiconductor layer may include a first surface area, a second surface area and a recess having a bottom surface. The recess may be aligned with the bottom surface of the first conductive layer, and the first surface of the first conductive layer may be aligned with the first area of the first surface of the first semiconductor layer. The first surface of the first semiconductor layer and the recess may have a surface roughness.
摘要翻译：可以提供一种发光器件，其包括导电支撑构件，第一导电层，第二导电层，第一导电层和第二导电层之间的绝缘层，以及包括第二半导体层的发光结构所述第二导电层，第一半导体层以及所述第一半导体层和所述第二半导体层之间的有源层。第一导电层可以包括穿过第二导电层，第二半导体层和有源层的至少一个导电通孔。所述至少一个导电通孔的顶表面设置在所述第一半导体层中。绝缘层可以基本上围绕导电通孔的侧壁。第一半导体层的第一表面可以包括第一表面区域，第二表面区域和具有底表面的凹部。凹部可以与第一导电层的底表面对齐，并且第一导电层的第一表面可以与第一半导体层的第一表面的第一区域对准。第一半导体层的第一表面和凹槽可以具有表面粗糙度。

36. 发明申请

US20110303934A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110303934A1
公开(公告)日：2011-12-15
申请号：US12522246
申请日：2009-01-15
申请人： Bong Cheol Kang , Hyun Kyong Cho
发明人： Bong Cheol Kang , Hyun Kyong Cho
IPC分类号： H01L33/60
CPC分类号： H01L33/405
摘要： Disclosed is a light emitting device. The light emitting device comprises a reflective layer comprising an alloy of at least one of an Ag-based alloy, an Al-based alloy, Ag, Al, Rh, or Sn, and at least one of Pd, Cu, C, Sn, In or Cr, and a light emitting semiconductor layer comprising a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer on the reflective layer.
摘要翻译：公开了一种发光器件。发光器件包括反射层，其包含Ag基合金，Al基合金，Ag，Al，Rh或Sn中的至少一种的合金，以及Pd，Cu，C，Sn， In或Cr，以及在反射层上包括第二导电半导体层，有源层和第一导电半导体层的发光半导体层。

37. 发明申请

US20100276715A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME 有权
标题翻译：发光装置，发光装置包装和包括其的照明系统
公开(公告)号：US20100276715A1
公开(公告)日：2010-11-04
申请号：US12772985
申请日：2010-05-03
申请人： Sung Min Hwang , Hyun Don Song , Hyun Kyong Cho
发明人： Sung Min Hwang , Hyun Don Song , Hyun Kyong Cho
IPC分类号： H01L33/02 , H01L33/36 , H01L33/46
CPC分类号： H01L33/60 , H01L33/0033 , H01L33/145 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/48 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.
摘要翻译：一种发光器件，包括第二导电类型半导体层; 在所述第二导电类型半导体层上方的有源层; 在有源层上的第一导电类型半导体层; 在第二导电类型半导体层下面的第一区域中的第二电极; 包括金属的电流阻挡层; 以及位于第一导电类型半导体层上的第一电极。此外，第一电极具有与电流阻挡层垂直重叠的至少一个部分。

38. 发明授权

US08643042B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08643042B2
公开(公告)日：2014-02-04
申请号：US13178975
申请日：2011-07-08
申请人： Jeong Hyeon Choi , Hyun Kyong Cho , Bock Kee Min
发明人： Jeong Hyeon Choi , Hyun Kyong Cho , Bock Kee Min
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/44 , H01L33/62 , H01L33/64 , H01L2224/48091 , H01L2224/48247 , H01L2933/0016 , H01L2924/00014
摘要： A light emitting device may be provided that includes a conductive support member, a first conductive layer, a second conductive layer, an insulation layer between the first conductive layer and the second conductive layer, and a light emitting structure that includes a second semiconductor layer on the second conductive layer, a first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The first conductive layer may include at least one conductive via that passes through the second conductive layer, the second semiconductor layer and the active layer. A top surface of the at least one conductive via is provided into the first semiconductor layer. The insulation layer may substantially surround a side wall of the conductive via. The first surface of the first semiconductor layer may include a first surface area, a second surface area and a recess having a bottom surface. The recess may be aligned with the bottom surface of the first conductive layer, and the first surface of the first conductive layer may be aligned with the first area of the first surface of the first semiconductor layer. The first surface of the first semiconductor layer and the recess may have a surface roughness.
摘要翻译：可以提供一种发光器件，其包括导电支撑构件，第一导电层，第二导电层，第一导电层和第二导电层之间的绝缘层，以及包括第二半导体层的发光结构所述第二导电层，第一半导体层以及所述第一半导体层和所述第二半导体层之间的有源层。第一导电层可以包括穿过第二导电层，第二半导体层和有源层的至少一个导电通孔。所述至少一个导电通孔的顶表面设置在所述第一半导体层中。绝缘层可以基本上围绕导电通孔的侧壁。第一半导体层的第一表面可以包括第一表面区域，第二表面区域和具有底表面的凹部。凹部可以与第一导电层的底表面对齐，并且第一导电层的第一表面可以与第一半导体层的第一表面的第一区域对准。第一半导体层的第一表面和凹槽可以具有表面粗糙度。

39. 发明授权

US08350274B2 Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit 有权
标题翻译：发光器件，制造发光器件的方法，发光器件封装和照明单元
公开(公告)号：US08350274B2
公开(公告)日：2013-01-08
申请号：US12975498
申请日：2010-12-22
申请人： Hyun Kyong Cho
发明人： Hyun Kyong Cho
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a conductive support substrate, a first reflective layer on the conductive support substrate, a second reflective layer in which at least portion thereof is disposed on a side surface of the first reflective layer, a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the first and second reflective layers, and an electrode on the light emitting structure. The second reflective layer schottky-contacts the light emitting structure.
摘要翻译：本发明提供发光器件，制造发光器件的方法，发光器件封装和照明单元。发光器件包括导电支撑衬底，导电支撑衬底上的第一反射层，第二反射层，其至少部分设置在第一反射层的侧表面上;发光结构，包括第一导电在第一和第二反射层上的第一导电类型半导体层和第二导电类型半导体层之间的第二导电类型半导体层和有源层以及发光结构上的电极。第二反射层肖特基接触发光结构。

40. 发明授权

US08344401B2 Light emitting device, light emitting device package and lighting system including the same 有权
标题翻译：发光装置，发光装置封装和包括其的照明系统
公开(公告)号：US08344401B2
公开(公告)日：2013-01-01
申请号：US12724791
申请日：2010-03-16
申请人： Hyun Kyong Cho , Hyun Don Song , Chang Hee Hong , Hyung Gu Kim
发明人： Hyun Kyong Cho , Hyun Don Song , Chang Hee Hong , Hyung Gu Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , F21K9/23 , F21Y2113/13 , F21Y2115/10 , H01L33/007 , H01L33/0079 , H01L33/16 , H01L33/382 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Provided are a light emitting device, a light emitting device package and a lighting system including the same. The light emitting device (LED) comprises a light emitting structure comprising a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer and a first electrode over the light emitting structure. A portion of the light emitting structure is sloped at a predetermined angle.
摘要翻译：提供了一种发光器件，发光器件封装以及包括该发光器件的照明系统。发光器件（LED）包括发光结构，该发光结构包括在发光结构上的第二导电类型半导体层，有源层和第一导电类型半导体层以及第一电极。发光结构的一部分以预定角度倾斜。

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