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1. 发明授权

US08598607B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08598607B2
公开(公告)日：2013-12-03
申请号：US12731029
申请日：2010-03-24
申请人： Jong Wook Kim , Hyun Kyong Cho , Gyu Chul Yi , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
发明人： Jong Wook Kim , Hyun Kyong Cho , Gyu Chul Yi , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/32 , H01L33/36 , H01L33/60
摘要： A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

2. 发明授权

US08242676B2 Field emission device, field emission display device and methods for manufacturing the same 有权
标题翻译：场发射装置，场发射显示装置及其制造方法
公开(公告)号：US08242676B2
公开(公告)日：2012-08-14
申请号：US12490163
申请日：2009-06-23
申请人： Yong-Jin Kim , Jin-Kyoung Yoo , Young-Joon Hong , Gyu-Chul Yi , Chul-Ho Lee
发明人： Yong-Jin Kim , Jin-Kyoung Yoo , Young-Joon Hong , Gyu-Chul Yi , Chul-Ho Lee
IPC分类号： H01J9/02
CPC分类号： H01J31/127 , H01J29/04 , H01J2201/30469
摘要： A field emission device, a field emission display device, and a method for manufacturing the same are disclosed. The field emission device includes: i) a substrate; ii) an electrode positioned on the substrate; iii) a mask layer positioned on the electrode and including one or more openings; and iv) a plurality of nanostructures positioned on the electrode via the openings and formed to extend radially. The plurality of nanostructures may be applied to emit an electron upon receiving a voltage from the electrode.
摘要翻译：公开了场致发射器件，场致发射显示器件及其制造方法。场致发射器件包括：i）衬底; ii）位于基底上的电极; iii）掩模层，其位于所述电极上并且包括一个或多个开口; 以及iv）多个纳米结构，其经由所述开口定位在所述电极上并且形成为径向延伸。可以施加多个纳米结构以在从电极接收电压时发射电子。

3. 发明授权

US08643035B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08643035B2
公开(公告)日：2014-02-04
申请号：US13489158
申请日：2012-06-05
申请人： Jong Wook Kim , Hyun Kyong Cho , Gyu Chul Yi , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
发明人： Jong Wook Kim , Hyun Kyong Cho , Gyu Chul Yi , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
IPC分类号： H01L33/32
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/32 , H01L33/36 , H01L33/60
摘要： A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

4. 发明申请

US20100156272A1 Field Emission Device, Field Emission Display Device and Methods for Manufacturing the Same 有权
标题翻译：场发射装置，场发射显示装置及其制造方法
公开(公告)号：US20100156272A1
公开(公告)日：2010-06-24
申请号：US12490163
申请日：2009-06-23
申请人： Yong-Jin Kim , Jin-Kyoung Yoo , Young-Joon Hong , Gyu-Chul Yi , Chul-Ho Lee
发明人： Yong-Jin Kim , Jin-Kyoung Yoo , Young-Joon Hong , Gyu-Chul Yi , Chul-Ho Lee
IPC分类号： H01J1/62 , H01J1/14 , H01J9/02 , H01J9/20
CPC分类号： H01J31/127 , H01J29/04 , H01J2201/30469
摘要： A field emission device, a field emission display device, and a method for manufacturing the same are disclosed. The field emission device includes: i) a substrate; ii) an electrode positioned on the substrate; iii) a mask layer positioned on the electrode and including one or more openings; and iv) a plurality of nanostructures positioned on the electrode via the openings and formed to extend radially. The plurality of nanostructures may be applied to emit an electron upon receiving a voltage from the electrode.
摘要翻译：公开了场致发射器件，场致发射显示器件及其制造方法。场致发射器件包括：i）衬底; ii）位于基底上的电极; iii）掩模层，其位于所述电极上并且包括一个或多个开口; 以及iv）多个纳米结构，其经由所述开口定位在所述电极上并且形成为径向延伸。可以施加多个纳米结构以在从电极接收电压时发射电子。

5. 发明授权

US07714337B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07714337B2
公开(公告)日：2010-05-11
申请号：US11707167
申请日：2007-02-16
申请人： Jong Wook Kim , Hyun Kyong Cho , Gyu Chul Yi , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
发明人： Jong Wook Kim , Hyun Kyong Cho , Gyu Chul Yi , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/32 , H01L33/36 , H01L33/60
摘要： A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

6. 发明授权

US07388201B2 Radiation detector having coated nanostructure and method 有权
标题翻译：具有涂层纳米结构和方法的辐射检测器
公开(公告)号：US07388201B2
公开(公告)日：2008-06-17
申请号：US11129582
申请日：2005-05-13
申请人： Marian Cholewa , Shu Ping Lau , Gyu-Chul Yi , Jin Kyoung Yoo , Adrian Paul Burden , Lei Huang , Xingyu Gao , Andrew Thye Shen Wee , Herbert Oskar Moser
发明人： Marian Cholewa , Shu Ping Lau , Gyu-Chul Yi , Jin Kyoung Yoo , Adrian Paul Burden , Lei Huang , Xingyu Gao , Andrew Thye Shen Wee , Herbert Oskar Moser
IPC分类号： G01N23/00
CPC分类号： G01T1/28 , Y10T428/2913
摘要： A radiation detector has an electron emitter that includes a coated nanostructure on a support. The nanostructure can include a plurality of nanoneedles. A nanoneedle is a shaft tapering from a base portion toward a tip portion. The tip portion has a diameter between about 1 nm to about 50 nm and the base portion has a diameter between about 20 nm to about 300 nm. Each shaft has a length between about 100 nm to about 3,000 nm and an aspect ratio larger than 10. A coating covers at least the tip portions of the shafts. The coating exhibits negative electron affinity and is capable of emitting secondary electrons upon being irradiated by radiation. The nanostructure can also include carbon nanotubes (CNTs) coated with a material selected from the group of aluminum nitride (AlN), gallium nitride (GaN), and zinc oxide (ZnO). The detector further includes an electron collector positioned to collect electrons emitted from the electron emitter and to produce a signal indicative of the amount of electrons collected, and a signal processor operatively connected to the electron collector for processing the signal to determine a characteristic of the radiation. The detector can be used to detect radiations of changed particles or light such as X-ray.
摘要翻译：辐射检测器具有电子发射体，其在载体上包括涂覆的纳米结构。纳米结构可以包括多个纳米针。纳米针是从基部朝向尖端部分逐渐变细的轴。尖端部分具有在约1nm至约50nm之间的直径，并且基部部分具有在约20nm至约300nm之间的直径。每个轴具有约100nm至约3,000nm的长度和大于10的纵横比。涂层至少覆盖轴的末端部分。涂层表现出负电子亲和力，并且在辐射照射时能够发射二次电子。纳米结构还可以包括涂覆有选自氮化铝（AlN），氮化镓（GaN）和氧化锌（ZnO）的材料的碳纳米管（CNT）。检测器还包括电子收集器，其被定位成收集从电子发射器发射的电子并产生指示所收集的电子量的信号;以及信号处理器，可操作地连接到电子收集器，用于处理信号以确定辐射的特性。检测器可用于检测改变的粒子或光线如X射线的辐射。

7. 发明申请

US20120241757A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120241757A1
公开(公告)日：2012-09-27
申请号：US13489158
申请日：2012-06-05
申请人： Jong Wook KIM , Hyun Kyong Cho , Gyu Chul YI , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
发明人： Jong Wook KIM , Hyun Kyong Cho , Gyu Chul YI , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
IPC分类号： H01L33/32
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/32 , H01L33/36 , H01L33/60
摘要： A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

8. 发明申请

US20100176416A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100176416A1
公开(公告)日：2010-07-15
申请号：US12731029
申请日：2010-03-24
申请人： Jong Wook KIM , Hyun Kyong Cho , Gyu Chul Yi , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
发明人： Jong Wook KIM , Hyun Kyong Cho , Gyu Chul Yi , Sung Jin An , Jin Kyoung Yoo , Young Joon Hong
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/32 , H01L33/36 , H01L33/60
摘要： A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

9. 发明申请

US20080272382A1 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20080272382A1
公开(公告)日：2008-11-06
申请号：US11707167
申请日：2007-02-16
申请人： Jong Wook Kim , Hyun Kyong Cho , Gyu Chul Yi , Sung Ji An , Jin Kyoung Yoo , Young Joon Hong
发明人： Jong Wook Kim , Hyun Kyong Cho , Gyu Chul Yi , Sung Ji An , Jin Kyoung Yoo , Young Joon Hong
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/32 , H01L33/36 , H01L33/60
摘要： A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

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