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31. 发明授权

US5788757A Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same 失效
标题翻译：使用用于制造金属氧化物膜的酯溶剂和包括其的电子器件的组合物和方法
公开(公告)号：US5788757A
公开(公告)日：1998-08-04
申请号：US770991
申请日：1996-12-23
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Jeffrey W. Bacon , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Jeffrey W. Bacon , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C01B13/32 , C01G33/00 , C01G35/00 , C23C18/12 , H01L21/8242 , H01L27/10 , H01L27/108 , C07F19/00 , C07F3/00 , C07F9/00 , C07F9/94
CPC分类号： C23C18/1216 , C23C18/1279
摘要： A metal organic liquid precursor solution includes metal organic complexes dispersed in an ester solvent. The ester solvent has medium length carbon chains to prevent the precipitation of strongly electropositive metals in solution. A liquid precursor solution is used to make thin film metal oxides of uniform thickness and consistent quality.
摘要翻译：金属有机液体前体溶液包括分散在酯溶剂中的金属有机配合物。酯溶剂具有中等长度的碳链以防止溶液中强正电性金属的沉淀。使用液体前体溶液制备厚度均匀且品质一致的薄膜金属氧化物。

32. 发明授权

US6110531A Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制备集成电路薄膜的方法和装置
公开(公告)号：US6110531A
公开(公告)日：2000-08-29
申请号：US892485
申请日：1997-07-14
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
IPC分类号： B05D1/00 , B05D1/04 , B05D3/04 , B05D7/24 , C23C4/12 , C23C16/02 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C16/56 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , C30B25/02 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , C23C16/18 , H01L21/31
CPC分类号： C23C16/45565 , B05D1/00 , B05D1/007 , B05D1/04 , B05D1/60 , B05D3/0493 , C23C16/0218 , C23C16/40 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C16/56 , C23C26/02 , C23C4/123 , C30B25/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/02197 , H01L21/02274 , H01L21/02356 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/1871 , H01L41/316 , H01L28/55 , H05K3/105
摘要： A mist is generated by a venturi from liquid precursors containing compounds used in chemical vapor deposition, transported in carrier gas through tubing at ambient temperature, passed into a heated zone where the mist droplets are gasified at a temperature of between 100.degree. C. and 200.degree. C., which is lower than the decomposition temperature of the precursor compounds. The gasified liquid is injected through an inlet assembly into a deposition reactor in which there is a substrate heated to from 400.degree. C. to 600.degree. C., on which the gasified compounds decompose and form a thin film of layered superlattice compound.
摘要翻译：由文氏管产生的气雾包含化学气相沉积中使用的化合物的液体前体，在载气中通过管道在环境温度下运输，并通入加热区，雾化气滴在100℃至200℃的温度下气化 ℃，其低于前体化合物的分解温度。将气化液体通过入口组件注入到沉积反应器中，其中存在加热至400℃至600℃的基底，气化的化合物在其上分解并形成层状超晶格化合物的薄膜。

33. 发明授权

US07187079B2 Stacked memory cell having diffusion barriers 有权
标题翻译：具有扩散阻挡层的堆积式存储单元
公开(公告)号：US07187079B2
公开(公告)日：2007-03-06
申请号：US10666381
申请日：2003-09-19
申请人： Vikram Joshi , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Vikram Joshi , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L23/48
CPC分类号： H01L27/11502 , C30B29/32 , C30B29/68 , H01L23/642 , H01L27/11507 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A nonconductive hydrogen barrier layer is deposited on a substrate and completely covers the surface area over a memory capacitor and a MOSFET switch of an integrated circuit memory cell. A portion of an insulator layer adjacent to the bottom electrode of a memory capacitor is removed by etching to form a moat region. A nonconductive oxygen barrier layer is deposited to cover the sidewall and bottom of the moat. The nonconductive oxygen barrier layer and a conductive diffusion barrier beneath the capacitor together provide a substantially continuous diffusion barrier between the capacitor and a switch. Also, the nonconductive hydrogen barrier layer, the nonconductive oxygen barrier, and the conductive diffusion barrier substantially completely envelop the capacitor, in particular a ferroelectric thin film in the capacitor.
摘要翻译：非导电氢阻挡层沉积在基板上并完全覆盖集成电路存储单元的存储电容器和MOSFET开关上的表面积。通过蚀刻去除与存储电容器的底部电极相邻的绝缘体层的一部分，以形成护城河区域。沉积非导电氧阻隔层以覆盖护城河的侧壁和底部。电容器下面的非导电氧阻挡层和导电扩散阻挡层一起在电容器和开关之间提供基本上连续的扩散阻挡层。此外，非导电氢阻挡层，非导电氧阻挡层和导电扩散阻挡层基本上完全包围电容器，特别是电容器中的铁电薄膜。

34. 发明授权

US06996000B2 Non-volatile ferroelectric SRAM 有权
标题翻译：非易失性铁电SRAM
公开(公告)号：US06996000B2
公开(公告)日：2006-02-07
申请号：US10961429
申请日：2004-10-07
申请人： Zheng Chen , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Zheng Chen , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： G11C7/00
CPC分类号： G11C11/22
摘要： A non-volatile SRAM memory comprising a plurality of memory cells, each memory cell including a SRAM memory cell portion and a ferroelectric memory cell portion including a ferroelectric element, the ferroelectric memory cell portion including a switch system for permitting the ferroelectric element to be isolated from the ferroelectric elements in all other memory cells.
摘要翻译：一种包括多个存储单元的非易失性SRAM存储器，每个存储单元包括一个SRAM存储单元部分和一个包括铁电元件的铁电存储单元部分，该铁电存储单元部分包括用于允许该铁电元件被隔离的开关系统从所有其他记忆单元中的铁电元件。

35. 发明授权

US06437380B1 Ferroelectric device with bismuth tantalate capping layer and method of making same 失效
标题翻译：具有钽酸铋盖层的铁电元件及其制造方法
公开(公告)号：US06437380B1
公开(公告)日：2002-08-20
申请号：US09819542
申请日：2001-03-28
申请人： Myoungho Lim , Vikram Joshi , Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Myoungho Lim , Vikram Joshi , Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L29/516 , H01L28/56
摘要： An integrated circuit device includes a thin film of bismuth-containing layered superlattice material having a thickness not exceeding 100 nm, a capping layer thin film of bismuth tantalate, and an electrode. The capping layer has a thickness in a range of from 3 nm to 30 nm and is deposited between the thin film of layered superlattice material and the electrode to increase dielectric breakdown voltage. Preferably the capping layer contains an excess amount of bismuth relative to the stoichiometrically balanced amount represented by the balanced stoichiometric formula BiTaO4. Preferably, the layered superlattice material is ferroelectric SBT or SBTN. Preferably, the integrated circuit device is a nonvolatile ferroelectric memory. Heating treatments for fabrication of the integrated circuit device containing the bismuth tantalate capping layerare conducted at temperatures not exceeding 700° C., preferably in a range of from 650° C. to 700° C.
摘要翻译：集成电路器件包括厚度不超过100nm的含铋层状超晶格材料薄膜，钽酸铋覆盖层薄膜和电极。覆盖层的厚度在3nm至30nm的范围内，并且沉积在层状超晶格材料的薄膜和电极之间以增加介电击穿电压。优选地，封盖层相对于由平衡化学计量式BiTaO 4表示的化学计量平衡量含有过量的铋。优选地，层状超晶格材料是铁电SBT或SBTN。优选地，集成电路器件是非易失性铁电存储器。用于制造包含钽酸铋覆盖层的集成电路器件的加热处理在不超过700℃的温度下进行，优选在650℃至700℃的范围内。

36. 发明授权

US06413883B1 Method of liquid deposition by selection of liquid viscosity and other precursor properties 有权
标题翻译：通过选择液体粘度和其他前体性质进行液体沉积的方法
公开(公告)号：US06413883B1
公开(公告)日：2002-07-02
申请号：US09243254
申请日：1999-02-03
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2131
CPC分类号： C23C18/1216 , C23C18/1291 , C23C18/14 , H01L21/02197 , H01L21/02282 , H01L21/02348 , H01L21/31691
摘要： A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.
摘要翻译：将多个液体，每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。通过调节体积流量控制器来调节前体液体的物理性质，使得当将前体施加到基底并进行处理时，所得到的固体材料薄膜具有平滑和平坦的表面。通常，物理性质是前体的粘度，其被选择为相对较低，在1-2厘泊的范围内。

37. 发明授权

US6133050A UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue 失效
标题翻译：用于制造具有低漏电流和低极化疲劳的电子器件的UV辐射过程
公开(公告)号：US6133050A
公开(公告)日：2000-10-17
申请号：US405885
申请日：1995-03-17
申请人： Masamichi Azuma , Larry D. McMillan , Carlos A. Paz de Araujo , Michael C. Scott
发明人： Masamichi Azuma , Larry D. McMillan , Carlos A. Paz de Araujo , Michael C. Scott
IPC分类号： C30B29/30 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , C30B29/68 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L27/108 , H01L27/115 , H01L21/31
CPC分类号： H01L21/31691 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55
摘要： A precursor solution formed of a liquid polyoxyalkylated metal complex in as solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500.degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700.degree. C. to 850.degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.
摘要翻译：将作为溶剂的液态聚氧化烷基化金属络合物形成的前体溶液施加到基板上，形成金属氧化物薄膜。将液体薄膜在空气中烘烤至高达500℃的温度，同时施加波长为180nm至300nm的UV辐射。该薄膜可以在增加的温度下进行两次烘烤，同时在一个或两个烘烤处施加UV辐射。然后将膜在约700℃至850℃的温度范围内退火，以产生薄膜固体金属氧化物产物。或者，可以将UV辐射施加到液体前体，该薄膜可以在紫外辐射或UV辐射的这种应用的组合与前体之间或在烘烤之前或之后对薄膜进行退火，和/或UV退火使用。使用紫外线辐射显着降低了最终金属氧化物的漏电流和碳杂质含量。

38. 发明授权

US6116184A Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size 失效
标题翻译：具有减少雾粒度的薄膜雾化液体沉积的方法和装置
公开(公告)号：US6116184A
公开(公告)日：2000-09-12
申请号：US971890
申请日：1997-11-17
申请人： Narayan Solayappan , Robert W. Grant , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Narayan Solayappan , Robert W. Grant , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B05D1/00 , B05D1/04 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , C23C14/00
CPC分类号： C23C18/12 , B05D1/007 , B05D1/04 , C23C16/40 , C23C16/448 , C23C16/45561 , C23C16/45565 , C23C18/1216 , H01L21/31691 , H01L28/55
摘要： A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is refined using a particle inertial separator, electrically filtered so that it comprises predominately negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area. An exhaust port defines a channel about the periphery of an exhaust plane parallel to and below the substrate plane.
摘要翻译：质量流量控制器控制前体到雾发生器的输送。使用文丘里管雾化前体，其中氧气和氮气的组合由电晕丝充电并且通过前体填充的喉部。使用粒子惯性分离器精制雾气，使其主要包含负离子，进入减速室，然后通过入口板中的入口端口进入沉积室，该入口板是腔室之间的分隔，接地电极。入口板位于要沉积雾的基底的平面上方并且基本上平行。基板被充电至约5000伏特的电压。在基板正上方的入口板的39平方英寸进口端口区域中每平方英寸有440个入口端口。入口面积大致等于衬底面积。排气口围绕平行于和低于衬底平面的排气平面的周边限定通道。

39. 发明授权

US5972428A Methods and apparatus for material deposition using primer 失效
标题翻译：使用底漆进行材料沉积的方法和装置
公开(公告)号：US5972428A
公开(公告)日：1999-10-26
申请号：US611414
申请日：1996-03-05
申请人： Shinichiro Hayashi , Larry D. McMillan , Masamichi Azuma , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Masamichi Azuma , Carlos A. Paz de Araujo
IPC分类号： H01L21/314 , H01L21/316 , C23C16/00 , B05D1/02
CPC分类号： H01L21/31691
摘要： A liquid primer is misted, flowed into a deposition chamber and deposited on a substrate. A liquid precursor is then misted, flowed into a deposition chamber and deposited on the substrate. The primer and precursor are dried to form a solid thin film, which is then annealed to form a part of an electronic component in an integrated circuit, such as the dielectric in a memory cell. The primer is a solvent, and the precursor includes a metal carboxylate, a metal alkoxide, or a metal alkoxycarboxylate in a precursor solvent. Preferably, the primer and the precursor solvent are the same solvent, such as 2-methoxyethanol, xylenes, or n-butyl acetate.
摘要翻译：液体底漆被雾化，流入沉积室并沉积在基底上。然后液体前体被雾化，流入沉积室并沉积在基底上。将底漆和前体干燥以形成固体薄膜，然后将其退火以形成集成电路中的电子部件的一部分，例如存储单元中的电介质。引物是溶剂，前体在前体溶剂中包括金属羧酸盐，金属醇盐或烷氧基羧酸金属盐。优选地，底漆和前体溶剂是相同的溶剂，例如2-甲氧基乙醇，二甲苯或乙酸正丁酯。

40. 发明授权

US5523964A Ferroelectric non-volatile memory unit 失效
标题翻译：铁电非易失性存储单元
公开(公告)号：US5523964A
公开(公告)日：1996-06-04
申请号：US224241
申请日：1994-04-07
申请人： Larry D. McMillan , Takashi Mihara , Hiroyuki Yoshimori , John W. Gregory , Carlos A. Paz de Araujo
发明人： Larry D. McMillan , Takashi Mihara , Hiroyuki Yoshimori , John W. Gregory , Carlos A. Paz de Araujo
IPC分类号： G11C14/00 , G11C11/22 , H01L21/8242 , H01L21/8247 , H01L27/10 , H01L27/108 , H01L29/788 , H01L29/792
CPC分类号： G11C11/22 , G11C11/223
摘要： An integrated circuit non-volatile, non-destructive read-out memory unit includes a ferroelectric capacitor having first and second electrodes, a capacitance Cf, and an area Af, and a transistor having a gate, a source and a drain forming a gate capacitor having an area Ag and a gate capacitance Cg, a gate overlap b, and a channel depth a, with the capacitor first electrode connected to the gate of the transistor. The ferroelectric material has a dielectric constant .epsilon.f and the gate insulator has a dielectric constant .epsilon.g. A source of a constant reference voltage is connectable to the first electrode. A bit line connects to the second electrode. In one embodiment the first electrode and gate are the same conductive member. In another embodiment the second electrode and the gate are the same conductive member and the first electrode is formed by extensions of the transistor source and drains underlying the gate, with the ferroelectric material between the source and drain extensions and the gate. The memory unit has the parametric relationships: Cf
摘要翻译：集成电路非易失性非破坏性读出存储单元包括具有第一和第二电极的铁电电容器，电容Cf和区域Af，以及具有形成栅极电容器的栅极，源极和漏极的晶体管具有面积Ag和栅极电容Cg，栅极重叠b和沟道深度a，其中电容器第一电极连接到晶体管的栅极。铁电材料具有介电常数εf，栅极绝缘体具有介电常数εg。恒定参考电压的源可连接到第一电极。位线连接到第二电极。在一个实施例中，第一电极和栅极是相同的导电构件。在另一个实施例中，第二电极和栅极是相同的导电构件，并且第一电极由晶体管源的延伸和栅极下方的漏极形成，铁电材料在源极和漏极延伸部分之间以及栅极之间。存储器单元具有参数关系：Cf <5xCg，Af / = 2a和epsilon g> / = epsilon f / 8。

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