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31. 发明授权

US09520315B2 Electrostatic chuck with internal flow adjustments for improved temperature distribution 有权
标题翻译：具有内部流量调节以提高温度分布的静电吸盘
公开(公告)号：US09520315B2
公开(公告)日：2016-12-13
申请号：US14145702
申请日：2013-12-31
申请人： Vijay D. Parkhe , Matthew J. Busche , Wendell Boyd, Jr. , Senh Thach , Konstantin Makhratchev , Masanori Ono
发明人： Vijay D. Parkhe , Matthew J. Busche , Wendell Boyd, Jr. , Senh Thach , Konstantin Makhratchev , Masanori Ono
IPC分类号： H01L21/683 , H01L21/67
CPC分类号： H01L21/6831 , H01L21/67109 , Y10T137/0318
摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones. A plurality of adjustable orifices are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.
摘要翻译：使用外部流量调节来描述静电卡盘，以改善温度分布。在一个示例中，设备具有用于静电地夹持硅晶片的电介质盘。冷却板被固定并且热耦合到陶瓷盘。供应气室从外部源接收冷却剂，并且多个冷却剂室热耦合到冷却板并从供应气室接收冷却剂。回流室连接到冷却区以从冷却区排出冷却剂。多个可调节的孔口位于供气室和相应的一个冷却区之间，以控制从供气室到冷却区域的冷却剂流量。

32. 发明授权

US08871312B2 Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber 有权
标题翻译：减少等离子体处理室中的半导体处理装置部件的表面上的等离子体电弧的方法
公开(公告)号：US08871312B2
公开(公告)日：2014-10-28
申请号：US13573354
申请日：2012-09-10
申请人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C04B35/505 , B32B18/00 , C04B35/50 , C04B35/486 , C04B35/495
CPC分类号： C04B35/505 , C04B35/486 , C04B35/495 , C04B35/50 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/404 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/81 , Y10T428/31
摘要： Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.
摘要翻译：在半导体加工条件下耐腐蚀/腐蚀等离子体腐蚀/腐蚀的特种陶瓷材料。腐蚀性等离子体可以是含卤素等离子体。特种陶瓷材料已经被修改以提供抑制等离子体电弧势的受控电阻率。

33. 发明授权

US08367227B2 Plasma-resistant ceramics with controlled electrical resistivity 有权
公开(公告)号：US08367227B2
公开(公告)日：2013-02-05
申请号：US11890156
申请日：2007-08-02
申请人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： B32B9/00 , B32B19/00 , B32B17/10 , B32B15/04 , C04B35/48 , C04B35/00 , C04B35/50 , C04B35/51
CPC分类号： C04B35/505 , C04B35/486 , C04B35/495 , C04B35/50 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/404 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/81 , Y10T428/31
摘要： Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

34. 发明授权

US06776873B1 Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers 有权
标题翻译：用于半导体IC处理真空室的氧化钇基表面涂层
公开(公告)号：US06776873B1
公开(公告)日：2004-08-17
申请号：US10075967
申请日：2002-02-14
申请人： Jennifer Y Sun , Shun Jackson Wu , Senh Thach , Ananda H Kumar , Robert W Wu , Hong Wang , Yixing Lin , Clifford C Stow
发明人： Jennifer Y Sun , Shun Jackson Wu , Senh Thach , Ananda H Kumar , Robert W Wu , Hong Wang , Yixing Lin , Clifford C Stow
IPC分类号： C23F100
CPC分类号： C23C28/00 , C23C16/4404
摘要： To further enhance the chamber material performance of anodized aluminum alloy materials against fluorine and oxygen plasma attack, a ceramic-based surface coating, high purity yttrium oxide coating, is provided on the anodized aluminum alloy parts.
摘要翻译：为了进一步提高阳极氧化铝合金材料对氟和氧等离子体侵蚀的室内材料性能，在阳极氧化铝合金部件上提供陶瓷基表面涂层，高纯度氧化钇涂层。

35. 发明授权

US06736668B1 High temperature electrical connector 失效
标题翻译：高温电连接器
公开(公告)号：US06736668B1
公开(公告)日：2004-05-18
申请号：US09663864
申请日：2000-09-15
申请人： Arnold V. Kholodenko , Senh Thach , Wing L. Cheng , Alvin Lau , Dennis S. Grimard
发明人： Arnold V. Kholodenko , Senh Thach , Wing L. Cheng , Alvin Lau , Dennis S. Grimard
IPC分类号： H01R1300
CPC分类号： H01R13/533 , H01R2201/24
摘要： An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.
摘要翻译：电耦合器包括具有上端和下端的内连接器，限定内连接器的绝缘外连接器元件和设置在内连接器的上端上的导热凸缘和用于传导来自电导体的热的外连接器。电导体可以用于半导体晶片处理的衬底支撑件中。衬底支撑件包括具有嵌入其中的电极的卡盘体，以及耦合到电极并从所述卡盘体突出的上部阳连接器。具有电耦合器的冷却板位于卡盘主体附近。上部阳连接器插入电耦合器中，并且耦合到电耦合器的下部的电源卡住并将晶片偏置到所述卡盘的上表面。导热凸缘传导和传递从上阳连接器和电耦合器产生的热量到冷却板。

36. 发明授权

US06659331B2 Plasma-resistant, welded aluminum structures for use in semiconductor apparatus 失效
标题翻译：用于半导体设备的等离子体焊接铝结构
公开(公告)号：US06659331B2
公开(公告)日：2003-12-09
申请号：US10086003
申请日：2002-02-26
申请人： Senh Thach , Jennifer Y. Sun , Shun Jackson Wu , Yixing Lin , Clifford C. Stow
发明人： Senh Thach , Jennifer Y. Sun , Shun Jackson Wu , Yixing Lin , Clifford C. Stow
IPC分类号： B23K3102
CPC分类号： B23K20/24 , B23K20/12 , B23K20/129 , B23K20/2336 , B23K2101/40 , B23K2103/10 , Y10T428/12736
摘要： We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.
摘要翻译：我们已经发现了一种生产复合形状的铝合金制品的方法，其中已经使用焊接来形成制品，其中在包括焊接接头的制品的表面上产生阳极氧化的铝涂层，并且其中阳极氧化的铝涂层是与现有技术中已知的用于暴露于腐蚀性等离子体环境的焊接制品相比提供了更好的性能。

37. 发明授权

US09520314B2 High temperature electrostatic chuck bonding adhesive 有权
标题翻译：高温静电卡盘粘合胶
公开(公告)号：US09520314B2
公开(公告)日：2016-12-13
申请号：US12640496
申请日：2009-12-17
申请人： Jennifer Y. Sun , Senh Thach , Ren-Guan Duan
发明人： Jennifer Y. Sun , Senh Thach , Ren-Guan Duan
IPC分类号： H01L21/68 , H02N13/00 , C09D183/04 , H01L21/683
CPC分类号： H01L21/6833 , C08K3/22 , C08K3/28 , C08K2003/2227 , C08K2003/282 , C09D183/04 , C09J11/04 , C09J183/04 , H01L21/6831 , H02N13/00 , Y10T279/23 , Y10T279/34
摘要： Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content Σ D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.
摘要翻译：本文提供了用于将静电卡盘结合到基板支撑件的部件的方法和装置。在一些实施例中，用于粘合基底支撑件的部件的粘合剂可以包括其中分散有填料的硅基聚合物材料的基体。硅基聚合物材料可以是分子量小于约500ppm的具有低分子量（LMW）含量ΣD3-D10的聚二甲基硅氧烷（PDMS）结构。在一些实施方案中，填料可以占粘合剂层的约50至约70体积％。在一些实施例中，填料可以包括氧化铝（Al 2 O 3），氮化铝（AlN），氧化钇（Y 2 O 3）或其组合的颗粒。在一些实施方案中，填料可以包含直径为约10纳米至约10微米的颗粒。

38. 发明申请

US20150187626A1 ELECTROSTATIC CHUCK WITH INTERNAL FLOW ADJUSTMENTS FOR IMPROVED TEMPERATURE DISTRIBUTION 有权
标题翻译：具有改善温度分布的内部流量调节的静电卡盘
公开(公告)号：US20150187626A1
公开(公告)日：2015-07-02
申请号：US14145702
申请日：2013-12-31
申请人： Vijay D. Parkhe , Matthew J. Busche , Wendell Boyd, JR. , Senh Thach , Konstantin Makhratchev , Masanori Ono
发明人： Vijay D. Parkhe , Matthew J. Busche , Wendell Boyd, JR. , Senh Thach , Konstantin Makhratchev , Masanori Ono
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , H01L21/67109 , Y10T137/0318
摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones. A plurality of adjustable orifices are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.
摘要翻译：使用外部流量调节描述静电卡盘，以改善温度分布。在一个示例中，设备具有用于静电地夹持硅晶片的电介质盘。冷却板被固定并且热耦合到陶瓷盘。供应气室从外部源接收冷却剂，并且多个冷却剂室热耦合到冷却板并从供应气室接收冷却剂。回流室连接到冷却区以从冷却区排出冷却剂。多个可调节的孔口位于供气室和相应的一个冷却区之间，以控制从供气室到冷却区的冷却剂的流量。

39. 发明申请

US20150187625A1 ELECTROSTATIC CHUCK WITH EXTERNAL FLOW ADJUSTMENTS FOR IMPROVED TEMPERATURE DISTRIBUTION 有权
标题翻译：具有改善温度分布的外部流量调节的静电卡盘
公开(公告)号：US20150187625A1
公开(公告)日：2015-07-02
申请号：US14145680
申请日：2013-12-31
申请人： Matthew J. Busche , Vijay De. Parkhe , Wendell Boyd, JR. , Senh Thach , Konstantin Makhratchev , Masanori Ono
发明人： Matthew J. Busche , Vijay De. Parkhe , Wendell Boyd, JR. , Senh Thach , Konstantin Makhratchev , Masanori Ono
IPC分类号： H01L21/683 , H05K7/20
CPC分类号： H01L21/6833 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H05K7/20218
摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones and a plurality of flow control valves are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.
摘要翻译：使用外部流量调节来描述静电卡盘，以改善温度分布。在一个示例中，设备具有用于静电地夹持硅晶片的电介质盘。冷却板被固定并且热耦合到陶瓷盘。供应气室从外部源接收冷却剂，并且多个冷却剂室热耦合到冷却板并从供应气室接收冷却剂。回流通风室联接到冷却区域以从冷却区域排出冷却剂，并且多个流量控制阀定位在供应压力室和相应的一个冷却区域之间，以控制从供气室到冷却区的冷却剂的流量冷却区。

40. 发明申请

US20130022838A1 Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber 有权
标题翻译：减少等离子体处理室中的半导体处理装置部件的表面上的等离子体电弧的方法
公开(公告)号：US20130022838A1
公开(公告)日：2013-01-24
申请号：US13573354
申请日：2012-09-10
申请人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C04B35/505 , B32B18/00
CPC分类号： C04B35/505 , C04B35/486 , C04B35/495 , C04B35/50 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/404 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/81 , Y10T428/31
摘要： Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.
摘要翻译：在半导体加工条件下耐腐蚀/腐蚀等离子体腐蚀/腐蚀的特种陶瓷材料。腐蚀性等离子体可以是含卤素等离子体。特种陶瓷材料已经被修改以提供抑制等离子体电弧势的受控电阻率。

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