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31. 发明申请

US20080012142A1 STRUCTURE AND METHOD OF CHEMICALLY FORMED ANCHORED METALLIC VIAS 有权
标题翻译：化学成形金属六角形的结构与方法
公开(公告)号：US20080012142A1
公开(公告)日：2008-01-17
申请号：US11307642
申请日：2006-02-15
申请人： Sanjay Mehta , Daniel Edelstein , John Fitzsimmons , Stephan Grunow , Henry Nye , David Rath
发明人： Sanjay Mehta , Daniel Edelstein , John Fitzsimmons , Stephan Grunow , Henry Nye , David Rath
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/5226 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods are provided that enable the ability to use a less aggressive liner processes, while producing structures known to give a desired high stress migration and electro-migration reliability. The present invention circumvents the issue of sputter damage of low k (on the order of 3.2 or less) dielectric by creating the via “anchors” (interlocked and interpenetrated vias) through chemical means. This allows the elimination or significant reduction of the sputter-etching process used to create the via penetration (“drilling, gouging”) into the line below in the barrier/seed metallization step. The present invention achieves the above, while maintaining a reliable copper fill and device structure.
摘要翻译：提供了使得能够使用较不积极的衬里工艺的能力，同时产生已知具有期望的高应力迁移和电迁移可靠性的结构。本发明通过化学方法制造通孔“锚”（互锁和相互穿透的通孔）来规避低k（约3.2以下）电介质的溅射损伤问题。这允许在阻挡/种子金属化步骤中消除或显着减少用于在下面的线中产生通孔穿透（“钻孔，气刨”）的溅射蚀刻工艺。本发明实现上述，同时保持可靠的铜填充和装置结构。

32. 发明申请

US20070224824A1 METHOD OF REPAIRING PROCESS INDUCED DIELECTRIC DAMAGE BY THE USE OF GCIB SURFACE TREATMENT USING GAS CLUSTERS OF ORGANIC MOLECULAR SPECIES 有权
标题翻译：通过使用有机分子物种的气体组合使用GCIB表面处理来修复过程诱导的电介质损伤的方法
公开(公告)号：US20070224824A1
公开(公告)日：2007-09-27
申请号：US11609040
申请日：2006-12-11
申请人： Shyng-Tsong Chen , Nancy R. Klymko , Anita Madan , Sanjay Mehta , Steven E. Molis
发明人： Shyng-Tsong Chen , Nancy R. Klymko , Anita Madan , Sanjay Mehta , Steven E. Molis
IPC分类号： H01L21/311
CPC分类号： H01L21/3105 , H01L21/31155 , H01L21/76808 , H01L21/76814 , H01L21/76825 , H01L21/76831
摘要： When an interconnect structure is built on porous ultra low k (ULK) material, the bottom and/or sidewall of the trench and/or via is usually damaged by a following metallization or cleaning process which may be suitable for dense higher dielectric materials. Embodiments of the present invention may provide a method of repairing process induced dielectric damage from forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes treating an exposed area of the ILD material to create a carbon-rich area, and metallizing the carbon-rich area. One embodiment includes providing treatment to an exposed sidewall area of the ILD material to create a carbon-rich area by irradiating the exposed area using a gas cluster ion beam (GCIB) generated through a gas including a straight chain or branched, aliphatic or aromatic hydrocarbon, and metallizing the carbon-rich area.
摘要翻译：当互连结构构建在多孔超低k（ULK）材料上时，沟槽和/或通孔的底部和/或侧壁通常被以下金属化或清洁工艺损坏，这可能适合于较高的介电材料。本发明的实施例可以提供一种通过在层间电介质（ILD）材料上形成互连结构来修复工艺引起的介电损伤的方法。该方法包括处理ILD材料的暴露区域以产生富含碳的区域，以及使富含碳的区域金属化。一个实施例包括通过使用通过包括直链或支链，脂族或芳族烃的气体产生的气体簇离子束（GCIB）照射暴露区域来向ILD材料的暴露的侧壁区域提供处理以产生富碳区域，并且富含碳的区域金属化。

33. 发明申请

US20060246245A1 Method to make single-layer pet bottles with high barrier and improved clarity 无效
标题翻译：制造具有高屏障和改善清晰度的单层宠物瓶的方法
公开(公告)号：US20060246245A1
公开(公告)日：2006-11-02
申请号：US10569614
申请日：2004-08-05
申请人： Zhenguo Liu , Sanjay Mehta , Xiaoyan Huang , David Schiraldi
发明人： Zhenguo Liu , Sanjay Mehta , Xiaoyan Huang , David Schiraldi
IPC分类号： B65D1/02
CPC分类号： C08K3/24 , B29B2911/1402 , B29B2911/14026 , B29B2911/14033 , B29B2911/1404 , B29B2911/14106 , B29B2911/14133 , B29B2911/1416 , B29C49/0005 , B29C49/06 , B29K2067/00 , B65D1/0207 , C08G63/6886 , C08K5/098 , C08K5/42 , C08L67/02 , C08L77/06 , Y10T428/13 , Y10T428/1352 , Y10T428/139 , C08L2666/20
摘要： The present invention comprises a blend of polyester and a partially aromatic polyamide with an ionic compatibilizer and a cobalt salt. This blend can be processed into a container that has both active and passive oxygen barrier and carbon dioxide barrier properties at an improved color and clarity than containers known in the art. The partially aromatic polyamide is preferably meta-xylylene adipamide. The ionic compatibilizer is preferably 5-sodiumsulfoisophthalic acid or 5-zincsulfoisophthalic acid, or their dialkyl esters such as the dimethyl ester (SIM) and glycol ester (SIPEG). The cobalt salt is selected form the class of cobalt acetate, cobalt carbonate, cobalt chloride, cobalt hydroxide, cobalt naphthenate, cobalt oleate, cobalt linoleate, cobalt octoate, cobalt stearate, cobalt nitrate, cobalt phosphate, cobalt sulfate, cobalt (ethylene glycolate), or mixtures of two or more of these. The partially aromatic polyamide is present in a range from about 1 to about 10 wt. % of said composition. The ionic compatibilizer is present in a range from about 0.1 to about 2.0 mol-% of said composition. The cobalt salt is present in a range from about 20 to about 500 ppm of said composition.
摘要翻译：本发明包括聚酯和部分芳族聚酰胺与离子增容剂和钴盐的共混物。与现有技术中已知的容器相比，该混合物可以加工成具有主动和被动氧气阻隔性和二氧化碳阻隔性能的容器，其颜色和透明度得到改善。部分芳族聚酰胺优选为间二甲苯基己二酰胺。离子增容剂优选为5-钠磺基间苯二甲酸或5-锌磺基间苯二甲酸，或其二烷基酯如二甲酯（SIM）和乙二醇酯（SIPEG）。钴盐选自乙酸钴，碳酸钴，氯化钴，氢氧化钴，环烷酸钴，油酸钴，亚油酸钴，辛酸钴，硬脂酸钴，硝酸钴，磷酸钴，硫酸钴，钴（乙醇酸）等。，或这些中的两种或更多种的混合物。部分芳族聚酰胺的存在量为约1至约10重量％。％的所述组合物。离子相容剂的存在量为所述组合物的约0.1至约2.0mol％。钴盐以所述组合物的约20至约500ppm的范围存在。

34. 发明申请

US20060189133A1 Reliable BEOL integration process with direct CMP of porous SiCOH dielectric 失效
标题翻译：可靠的BEOL集成工艺与多孔SiCOH电介质的直接CMP
公开(公告)号：US20060189133A1
公开(公告)日：2006-08-24
申请号：US11063152
申请日：2005-02-22
申请人： Christos Dimitrakopoulos , Stephen Gates , Vincent McGahay , Sanjay Mehta
发明人： Christos Dimitrakopoulos , Stephen Gates , Vincent McGahay , Sanjay Mehta
IPC分类号： H01L21/4763 , H01L21/44 , H01L23/48
CPC分类号： H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76885 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to methods of improving the fabrication of interconnect structures of the single or dual damascene type, in which there is no problem of hard mask retention or of conductivity between the metal lines after fabrication. The methods of the present invention include at least steps of chemical mechanical polishing and UV exposure or chemical repair treatment which steps improve the reliability of the interconnect structure formed. The present invention also relates to an interconnect structure which include a porous ultra low k dielectric of the SiCOH type in which the surface layer thereof has been modified so as to form a gradient layer that has both a density gradient and a C content gradient.
摘要翻译：本发明涉及改进单镶嵌型或双镶嵌型互连结构的制造方法，其中在制造之后金属线之间没有硬掩模保持或导电性问题。本发明的方法包括化学机械抛光和紫外线曝光或化学修复处理的至少步骤，这些步骤提高了形成的互连结构的可靠性。本发明还涉及一种互连结构，其包括SiCOH型的多孔超低k电介质，其中其表面层被修饰以形成具有密度梯度和C含量梯度的梯度层。

35. 发明授权

US09209126B2 Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication 有权
标题翻译：自对准精细间距永久性片上互连结构和制造方法
公开(公告)号：US09209126B2
公开(公告)日：2015-12-08
申请号：US13606788
申请日：2012-09-07
申请人： Qinghuang Lin , Sanjay Mehta , Hosadurga Shobha
发明人： Qinghuang Lin , Sanjay Mehta , Hosadurga Shobha
IPC分类号： H01L23/522 , H01L23/532 , H01L21/768
CPC分类号： H01L23/5222 , H01L21/768 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76816 , H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L23/53295 , H01L2221/1026 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed on vertical surfaces of a mandrel. The sidewall portions form spaced-apart openings. Conductive structures fill the spaced-apart openings and are separated by the sidewall portions to form single damascene structures.
摘要翻译：互连结构及其制造方法包括层间电介质层的侧壁部分。侧壁部分具有小于给定平版印刷技术的最小特征尺寸的宽度，并且当在心轴的垂直表面上共形形成时，宽度由层间电介质层的厚度形成。侧壁部分形成间隔开的开口。导电结构填充间隔开的开口并且被侧壁部分分开以形成单个镶嵌结构。

36. 发明授权

US07778976B2 Multi-dimensional surrogates for data management 失效
标题翻译：用于数据管理的多维代理
公开(公告)号：US07778976B2
公开(公告)日：2010-08-17
申请号：US11211056
申请日：2005-08-23
申请人： Roy P. D'Souza , Sanjay Mehta , Bhushan Pandit , Thirumalai Muppur Ravi
发明人： Roy P. D'Souza , Sanjay Mehta , Bhushan Pandit , Thirumalai Muppur Ravi
IPC分类号： G06F17/30
CPC分类号： G06F17/30592
摘要： Multi-dimensional surrogation systems and methods are provided that generate at least one data surrogate using information of data and numerous data changes received from at least one data source. The multi-dimensional surrogation transforms data of each data surrogate from a format of the data source to at least one alternative format. Original metadata is extracted from each data surrogate. New metadata is generated by combining portions of the original metadata and components of each data surrogate. The multi-dimensional surrogation generates an extended data surrogate comprising the data surrogate and the new metadata.
摘要翻译：提供了多维代理系统和方法，其使用数据的信息和从至少一个数据源接收的大量数据变化来生成至少一个数据代理。多维代理将每个数据代理的数据从数据源的格式转换成至少一种备选格式。从每个数据代理提取原始元数据。通过组合原始元数据的各部分和每个数据代理的组件来生成新的元数据。多维代理产生包括数据代理和新元数据的扩展数据代理。

37. 发明申请

US20080300130A1 Catalyst For Improving The Adiabatic Steam Reforming Of Natural Gas 有权
标题翻译：用于改善天然气绝热蒸汽重整的催化剂
公开(公告)号：US20080300130A1
公开(公告)日：2008-12-04
申请号：US12189856
申请日：2008-08-12
申请人： Diwakar Garg , Shankar Nataraj , Kevin Boyle Fogash , James Richard O'Leary , William Robert Licht , Sanjay Mehta , Eugene S. Genkin
发明人： Diwakar Garg , Shankar Nataraj , Kevin Boyle Fogash , James Richard O'Leary , William Robert Licht , Sanjay Mehta , Eugene S. Genkin
IPC分类号： B01J23/58
CPC分类号： C10G11/02 , B01J23/78 , B01J35/10 , B01J35/1009 , B01J35/1066 , B01J35/108 , C01B3/40 , C01B2203/0233 , C01B2203/1058 , C01B2203/1094 , Y02P20/52
摘要： A catalyst for adiabatically prereforming a feedstock wherein the catalyst comprises 1 to 20 wt. % nickel and 0.4 to 5 wt. % potassium on a calcium aluminate support. The overall catalyst porosity is greater than 40% with greater than 70% of the overall catalyst porosity contributed by pores having pore diameters of at least 500 Å, and having a median pore diameter greater than 2600 Å, and having a nitrogen BET area less than 6.5 m2/g.
摘要翻译：一种用于绝热预成型原料的催化剂，其中催化剂包含1至20wt。％镍和0.4〜5wt。铝酸钙载体上的钾含量。总催化剂孔隙率大于40％，其中大于70％的总催化剂孔隙率由孔径至少为500埃的孔隙度贡献，并且具有大于2600埃的中值孔径，并且氮BET值小于 6.5 m2 / g。

38. 发明申请

US20080169590A1 Polyester-Polyamide Blends Having Low Haze 审中-公开
标题翻译：具有低雾度的聚酯 - 聚酰胺共混物
公开(公告)号：US20080169590A1
公开(公告)日：2008-07-17
申请号：US11660196
申请日：2004-08-31
申请人： Sanjay Mehta , Phyllis Anne Hiltner , Eric Baer
发明人： Sanjay Mehta , Phyllis Anne Hiltner , Eric Baer
IPC分类号： B32B1/02 , B32B27/34 , B32B27/36 , C08F283/00 , C08F20/52 , B29C47/00 , B29D22/00 , B29C49/04 , C08L67/00 , C08F283/04
CPC分类号： C08L67/02 , C08L77/00 , C08L2666/20 , C08L2666/14
摘要： The invention relates to blends of polyamides in polyesters, a method for forming such compositions, and to containers made from such compositions. Specifically the compositions have less haze and transparency than previous blends. The blends can be used as passive gas barriers, and/or active oxygen scavengers with the addition of a transition metal catalyst. The invention seeks to obtain balanced refractive indices for the polyamides/polyester compositions. A method to blend the copolyester and polyamides and orient the blend to minimize the haze, thereby forming an oriented article, is also described and claimed. These articles have excellent gas barrier properties.
摘要翻译：本发明涉及聚酰胺在聚酯中的共混物，形成这种组合物的方法以及由这些组合物制成的容器。具体地，组合物比以前的共混物具有更少的雾度和透明度。混合物可以被用作被动气体屏障，和/或活性氧清除剂，加入过渡金属催化剂。本发明寻求获得聚酰胺/聚酯组合物的平衡折射率。还描述和要求保护共混聚酯和聚酰胺并使混合物定向以最小化雾度，从而形成定向制品的方法。这些制品具有优异的阻气性能。

39. 发明申请

US20080109090A1 System And Method For Process Monitoring 有权
标题翻译：过程监控系统与方法
公开(公告)号：US20080109090A1
公开(公告)日：2008-05-08
申请号：US11934156
申请日：2007-11-02
申请人： Ali Esmaili , Sanjay Mehta , Debashis Neogi , Carlos Valenzuela
发明人： Ali Esmaili , Sanjay Mehta , Debashis Neogi , Carlos Valenzuela
IPC分类号： G05B13/02 , G06F3/048 , G06G7/48
CPC分类号： G05B23/0254 , G05B17/02 , G05B2219/31457 , G05B2219/31477 , G05B2219/31478 , G05B2223/06
摘要： Systems and methods are provided that allow a user to monitor, diagnose, and configure a process. A user interface may be presented that displays data received from process monitors, sensors, and multivariate models. The user interface may be interactive, allowing a user to select which composite and multivariate models are displayed. The user interface and multivariate model may be constructed and updated in real time. The user interface may present various data and interfaces, such as a representation of a composite variable in a multivariate model, a representation of the contribution of process variables to the composite variable, and a representation of a subset of the process variables. The user may select a point of the composite variable for analysis, and the interface may indicate the contribution and values of process variables at the selected point. The interface may be transmitted to a remote user.
摘要翻译：提供了允许用户监视，诊断和配置进程的系统和方法。可以呈现显示从过程监视器，传感器和多变量模型接收的数据的用户界面。用户界面可以是交互式的，允许用户选择显示哪些复合和多变量模型。可以实时构建和更新用户界面和多变量模型。用户界面可以呈现各种数据和接口，诸如多变量模型中的复合变量的表示，过程变量对复合变量的贡献的表示，以及过程变量的子集的表示。用户可以选择用于分析的复合变量的点，并且接口可以指示所选点处的过程变量的贡献和值。该接口可以被发送到远程用户。

40. 发明申请

US20080073790A1 METHOD OF FABRICATING A WIRE BOND PAD WITH Ni/Au METALLIZATION 审中-公开
标题翻译：用Ni / Au金属化制作线束的方法
公开(公告)号：US20080073790A1
公开(公告)日：2008-03-27
申请号：US11866741
申请日：2007-10-03
申请人： Lloyd Burrell , Charles Davis , Ronald Goldblatt , William Landers , Sanjay Mehta
发明人： Lloyd Burrell , Charles Davis , Ronald Goldblatt , William Landers , Sanjay Mehta
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L23/3192 , H01L23/53223 , H01L24/03 , H01L2224/04042 , H01L2224/0501 , H01L2224/05022 , H01L2224/05082 , H01L2224/05124 , H01L2224/05155 , H01L2224/05644 , H01L2224/45124 , H01L2224/48744 , H01L2924/00014 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2224/48
摘要： A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a protective coating covering exposed surfaces of a wire bond pad. The TiN/Ti or TiN/Al cap is not affected by alkaline chemistries used in forming the Ni/Au metallization, yet it provides a sufficient electrical pathway connecting the bond pads to the Ni/Au pad metallization.
摘要翻译：提供了一种通过能够防止在Ni / Au焊盘冶金的无电沉积期间可能的化学侵蚀的材料来密封引线接合焊盘的暴露表面的方法。具体地说，本发明提供了一种TiN / Ti或TiN / Al帽作为覆盖引线接合焊盘露出表面的保护涂层的方法。 TiN / Ti或TiN / Al帽不受用于形成Ni / Au金属化的碱性化学物质的影响，但它提供了将接合焊盘连接到Ni / Au焊盘金属化的足够的电通路。

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