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31. 发明授权

US5881298A Portable computer with selectively operable cooling unit 失效
标题翻译：便携式计算机，可选择性地可操作的冷却单元
公开(公告)号：US5881298A
公开(公告)日：1999-03-09
申请号：US707634
申请日：1996-09-05
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： G06F1/20 , G06F1/32 , G06F1/00
CPC分类号： G06F1/203 , G06F1/3203
摘要： A portable computer that conserves power when the computer operates from its portable power source. The portable computer has a processor operatively coupled to an input device, an output device, and a memory device. The portable computer also includes a portable power source operatively coupled to the processor, and a selectively operable cooling system that is adapted to create a heat transfer zone in which heat dissipates from the processor. The cooling system has a cooling unit that may be selectively disabled in a desired power-saving mode during which the processor may continue to operate. The cooling unit is preferably disabled by electrically disconnecting the cooling unit from the portable power source to de-energize the cooling system, or by physically disconnecting the cooling system from the portable computer.
摘要翻译：便携式计算机，当计算机从其便携式电源运行时节省电力。便携式计算机具有可操作地耦合到输入设备，输出设备和存储设备的处理器。便携式计算机还包括可操作地耦合到处理器的便携式电源，以及可选择性地操作的冷却系统，其适于产生热处理器散热的传热区域。冷却系统具有可以在处理器可以继续操作的期望的省电模式中选择性地禁用的冷却单元。优选地，通过将冷却单元与便携式电源电断开以使冷却系统断电，或通过物理地将冷却系统与便携式计算机断开连接来实现冷却单元的禁用。

32. 发明授权

US5853492A Wet chemical emitter tip treatment 失效
公开(公告)号：US5853492A
公开(公告)日：1998-12-29
申请号：US608153
申请日：1996-02-28
申请人： David A. Cathey , Terry Gilton
发明人： David A. Cathey , Terry Gilton
IPC分类号： H01J9/02 , E03C23/00
CPC分类号： H01J9/025
摘要： A wet chemical process is provided for treating an emitter formed on a substrate of a field emission display, the process comprises applying a solution including hydrogen to the emitter. In one embodiment of the invention, the steps of applying a solution comprises applying a solution of hydrofluoric acid to the emitter.

33. 发明授权

US5789754A Leak detection method and apparatus for plasma processing equipment 失效
标题翻译：等离子体处理设备的泄漏检测方法和装置
公开(公告)号：US5789754A
公开(公告)日：1998-08-04
申请号：US699489
申请日：1996-08-19
申请人： David A. Cathey , Rodney C. Langley
发明人： David A. Cathey , Rodney C. Langley
IPC分类号： G01N21/73
CPC分类号： G01N21/73
摘要： In one aspect, a method of detecting leaks of external atmospheric gases into a plasma reactor comprises monitoring an emission spectra of a plasma within the reactor for the presence of an external atmospheric constituent. In another aspect, a method of detecting an external atmospheric leak in a plasma enhanced reactor comprising detecting photon emission of excited nitrogen present within the reactor. In yet another aspect, a leak detection system of continuously detecting for leaks of external atmospheric gases into a plasma reactor comprises: a) an optical detection apparatus in optical communication with a plasma in the plasma reactor; b) the optical detection apparatus being configured to monitor an emission spectra of the plasma for a signal due to presence of an external atmospheric constituent within the plasma and for a signal due to a non-atmospheric constituent within the plasma; and c) an alarm configured to generate a response when the relative size of the external atmospheric constituent signal to the non-atmospheric constituent signal exceeds a predetermined value.
摘要翻译：在一个方面，检测外部大气气体进入等离子体反应器的泄漏的方法包括监测反应器内的等离子体的外部大气成分的存在的发射光谱。在另一方面，一种检测等离子体增强反应器中的外部大气泄漏的方法，包括检测存在于反应器内的受激氮的光子发射。在另一方面，一种连续地检测外部大气气体进入等离子体反应器的泄漏检测系统包括：a）与等离子体反应器中的等离子体光学连通的光学检测装置; b）光学检测装置被配置为监测由于在等离子体内存在外部大气成分和由于等离子体内的非大气成分引起的信号引起的信号的等离子体的发射光谱; 以及c）被配置为当所述外部大气分量信号相对于所述非大气分量信号的相对大小超过预定值时产生响应的报警。

34. 发明授权

US5653017A Method of mechanical and electrical substrate connection 失效
标题翻译：机械和电气基板连接方法
公开(公告)号：US5653017A
公开(公告)日：1997-08-05
申请号：US642581
申请日：1996-05-03
申请人： David A. Cathey , Charles Watkins , Derek Gochnour
发明人： David A. Cathey , Charles Watkins , Derek Gochnour
IPC分类号： H01J9/34 , H01J9/24 , H01J9/26 , H01J9/32 , H01J9/36 , H01L21/60 , H01L21/98 , H01L23/538 , H05K3/32 , H05K3/36
CPC分类号： H01L25/50 , H01J9/241 , H01J9/261 , H01J9/32 , H01J9/36 , H01L23/5385 , H01J2329/8625 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/48465 , H01L24/45 , H01L24/48 , H01L2924/00014 , H05K3/328 , H05K3/368 , Y10T29/49126
摘要： The disclosure describes a method of attaching and electrically connecting first and second planar substrates, wherein the first and second substrates have inwardly-facing surfaces with matching patterns of bond pads. The method includes adjusting a wire bonder's tear. length to a setting which leaves a projecting tail of severed bond wire at a terminating wedge bond connection. Further steps include making a wedge bond to an individual bond pad of the first planar substrate with bond wire from the wire bender, and then severing the bond wire adjacent said wedge bond. The adjusted tear length of the wire bender results in a tail of severed bond wire which projects from said wedge bond and said individual bond pad. Subsequent steps include positioning the first and second planar substrates with their inwardly-facing surfaces facing each other, aligning the matching bond pad patterns of the first and second planar substrates, and pressing the first and second planar substrates against each other. The bond wire tail deforms between the bond pads of the first and second planar substrates to conductively bond therebetween.
摘要翻译：本公开描述了一种附接和电连接第一和第二平面基板的方法，其中第一和第二基板具有具有匹配的接合焊盘图案的向内表面。该方法包括调整引线接合器的撕裂。长度达到在终止楔形键合连接处留下切断的接合线的突出尾部的设置。进一步的步骤包括使用与电线弯曲机的接合线将楔形结合到第一平面基板的单个接合焊盘，然后切断邻近所述楔形键的接合线。弯曲机的经调整的撕裂长度导致从所述楔形键和所述单独接合焊盘突出的断开的接合线的尾部。随后的步骤包括将第一和第二平面基板的面向彼此的面向内的表面定位，使第一和第二平面基板的匹配接合焊盘图案对齐，并将第一和第二平面基板彼此压紧。接合线尾部在第一和第二平面基板的接合焊盘之间变形，以在它们之间导电地结合。

35. 发明授权

US5372973A Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology 失效
标题翻译：使用化学机械抛光技术在冷阴极发射器尖端周围形成自对准栅极结构的方法
公开(公告)号：US5372973A
公开(公告)日：1994-12-13
申请号：US53794
申请日：1993-04-27
申请人： Trung T. Doan , J. Brett Rolfson , Tyler A. Lowrey , David A. Cathey
发明人： Trung T. Doan , J. Brett Rolfson , Tyler A. Lowrey , David A. Cathey
IPC分类号： H01J1/304 , H01J9/02 , H01L21/3105 , H01L21/465
CPC分类号： H01J9/025 , H01L21/31053 , H01J2201/30426 , H01J2201/319 , H01J2209/0226
摘要： A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.
摘要翻译：用于形成围绕用于场发射显示器中的电子发射尖端的自对准栅极结构的化学机械抛光工艺，其中发射尖端i）可选地通过氧化锐化，ii）用保形绝缘材料沉积，iii）沉积具有可流动的绝缘材料，其被回流到尖端的水平面以下，iv）任选地沉积有另外的绝缘材料，v）沉积有导电材料层，以及vi）任选地沉积有缓冲材料，vii）化学机械平面化（CMP）步骤，暴露保形绝缘层，viii）湿式蚀刻以去除绝缘材料，从而暴露发射尖端，之后ix）发射极尖端可以涂覆具有比硅功函数低的材料。

36. 发明授权

US5300463A Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers 失效
标题翻译：在半导体晶片上选择性地蚀刻二氧化硅电介质层的方法
公开(公告)号：US5300463A
公开(公告)日：1994-04-05
申请号：US847368
申请日：1992-03-06
申请人： David A. Cathey , J. Brett Rolfson
发明人： David A. Cathey , J. Brett Rolfson
IPC分类号： H01L21/311 , H01L21/00 , H01L21/02 , H01L21/465
CPC分类号： H01L21/31111
摘要： A method of utilizing and etching SiO.sub.2 in the processing of semiconductor wafers comprises: a) providing a layer of undoped SiO.sub.2 atop a wafer; b) providing a layer of doped SiO.sub.2 atop the layer of undoped SiO.sub.2 ; and c) wet etching the layer of doped SiO.sub.2 selectively relative to the undoped layer of SiO.sub.2 utilizing an acid solution, the acid solution comprising a mixture of at least two different mineral acids provided in a selected ratio relative to one another, one of the mineral acids being HF. The preferred volumetric ratio of other mineral acids in the acid solution to HF in the acid solution is from 20:1 to 110:1, with a ratio of from 45:1 to 65:1 being most preferred. Example acids to be combined with the HF include H.sub.2 SO.sub.4, HCl, HNO.sub.3, H.sub.3 PO.sub.4, HBr, HI, HClO.sub.4, and HIO.sub.4, or mixtures thereof.
摘要翻译：在半导体晶片的处理中利用和蚀刻SiO 2的方法包括：a）在晶片顶上提供未掺杂的SiO 2层; b）在未掺杂的SiO 2层的顶部提供掺杂SiO 2层; 和c）使用酸溶液相对于未掺杂的SiO 2层选择性地浸蚀掺杂SiO 2层，所述酸溶液包含以相对于彼此的选定比率提供的至少两种不同的无机酸的混合物，所述矿物质之一酸是HF。在酸溶液中酸溶液中的其它无机酸与HF的优选体积比为20:1至110:1，最优选的比例为45:1至65:1。与HF组合的实例酸包括H 2 SO 4，HCl，HNO 3，H 3 PO 4，HBr，HI，HClO 4和HIO 4，或其混合物。

37. 发明授权

US5244842A Method of increasing capacitance by surface roughening in semiconductor wafer processing 失效
标题翻译：通过半导体晶片加工中的表面粗糙度增加电容的方法
公开(公告)号：US5244842A
公开(公告)日：1993-09-14
申请号：US812061
申请日：1991-12-17
申请人： David A. Cathey , Mark E. Tuttle , Tyler A. Lowrey
发明人： David A. Cathey , Mark E. Tuttle , Tyler A. Lowrey
IPC分类号： H01L21/02 , H01L21/334
CPC分类号： H01L28/84 , H01L29/66181 , Y10S438/964
摘要： A method of increasing capacitance by surface roughening in semiconductor wafer processing includes the following steps: a) applying a first layer of material atop a substrate thereby defining an exposed surface; b) incontinuously adhering discrete solid particles to the first layer exposed surface to roughen the exposed surface; and c) applying a second layer of material atop the first layer and adhered solid particles to define an outer surface, the particles adhered to the first layer inducing roughness into the outer surface thereby increasing its surface area and accordingly capacitance of the second layer in the final wafer structure.
摘要翻译：通过在半导体晶片处理中通过表面粗糙度增加电容的方法包括以下步骤：a）在基板顶部施加第一层材料，从而限定暴露的表面; b）不连续地将离散的固体颗粒粘附到第一层暴露表面以使暴露的表面粗糙; 以及c）在第一层上方施加第二层材料并粘附固体颗粒以限定外表面，粘附到第一层的颗粒引起粗糙度进入外表面，从而增加其表面积，从而增加其中的第二层的电容最终的晶圆结构。

38. 发明授权

US5229331A Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology 失效
标题翻译：使用化学机械抛光技术在冷阴极发射器尖端周围形成自对准栅极结构的方法
公开(公告)号：US5229331A
公开(公告)日：1993-07-20
申请号：US837453
申请日：1992-02-14
申请人： Trung T. Doan , J. Brett Rolfson , Tyler A. Lowrey , David A. Cathey
发明人： Trung T. Doan , J. Brett Rolfson , Tyler A. Lowrey , David A. Cathey
IPC分类号： H01J1/304 , H01J9/02 , H01L21/3105
CPC分类号： H01J9/025 , H01L21/31053 , H01J2201/30426 , H01J2201/319 , H01J2209/0226
摘要： A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.
摘要翻译：用于形成围绕用于场发射显示器中的电子发射尖端的自对准栅极结构的化学机械抛光工艺，其中发射尖端i）可选地通过氧化锐化，ii）用保形绝缘材料沉积，iii）沉积具有可流动的绝缘材料，其被回流到尖端的水平面以下，iv）任选地沉积有另外的绝缘材料，v）沉积有导电材料层，以及vi）任选地沉积有缓冲材料，vii）化学机械平面化（CMP）步骤，暴露保形绝缘层，viii）湿式蚀刻以去除绝缘材料，从而暴露发射尖端，之后ix）发射极尖端可以涂覆具有比硅功函数低的材料。

39. 发明授权

US5000208A Wafer rinser/dryer 失效
标题翻译：晶圆洗衣机/烘干机
公开(公告)号：US5000208A
公开(公告)日：1991-03-19
申请号：US541642
申请日：1990-06-21
申请人： Bryan J. Ludwig , David A. Cathey , Ernest E. Marks , Leo B. Jurica , L. Brian Dunn , Loyal R. Gibbons
发明人： Bryan J. Ludwig , David A. Cathey , Ernest E. Marks , Leo B. Jurica , L. Brian Dunn , Loyal R. Gibbons
IPC分类号： H01L21/00
CPC分类号： H01L21/67028 , Y10S134/902
摘要： Improvements to an integrated circuit wafer rinsing and washing machine which include a streamlined housing for low turbulence air flow, improved rear maintenance capability, improved wafer carriers, foot operated switches and improved rotating part fastening means.
摘要翻译：一种集成电路晶片冲洗和洗衣机的改进，其包括用于低湍流气流的流线型壳体，改进的后维护能力，改进的晶片载体，脚踏开关和改进的旋转部件紧固装置。

40. 发明授权

US07268482B2 Preventing junction leakage in field emission devices 有权
标题翻译：防止场致发射装置的结漏电
公开(公告)号：US07268482B2
公开(公告)日：2007-09-11
申请号：US11330046
申请日：2006-01-11
申请人： James J. Hofmann , John K. Lee , David A. Cathey , Glen E. Hush
发明人： James J. Hofmann , John K. Lee , David A. Cathey , Glen E. Hush
IPC分类号： H01J1/304 , H01J19/24
CPC分类号： H01J3/022 , H01J9/241 , H01J29/04 , H01J29/06 , H01J29/89 , H01J31/127 , H01J2201/319
摘要： An apparatus for stabilizing the threshold voltage in an active matrix field emission device is disclosed. The apparatus includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.
摘要翻译：公开了一种用于稳定有源矩阵场致发射器件中的阈值电压的装置。该装置包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成辐射阻挡元件。

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