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    • 33. 发明授权
    • Integrated circuit process monitoring and metrology system
    • 集成电路过程监控与计量系统
    • US07115425B2
    • 2006-10-03
    • US11072127
    • 2005-03-04
    • Peter A. BurkeEric J. KirchnerJames R. B. Elmer
    • Peter A. BurkeEric J. KirchnerJames R. B. Elmer
    • H01L21/66
    • H01L22/34H01L21/31053
    • A method for monitoring polishing process parameters for an integrated circuit structure on a substrate. A first metrology site is constructed on the substrate. The first metrology site represents a design extreme of a high density integrated circuit structure. The first metrology site is formed by placing a relatively small horizontal surface area trench within a relatively large surface area field of a polish stop material. A second metrology site is also constructed on the substrate. The second metrology site represents a design extreme of a low density integrated circuit structure. The second metrology site is formed by placing a relatively large horizontal surface area trench within a relatively small surface area field of a polish stop material. The substrate is covered with a layer of an insulating material, thereby at least filling the trenches. A target thickness of the insulating material necessary to leave the trenches substantially filled to a top surface of the field of polish stop material is calculated. The substrate is polished until a first thickness of the insulating material in the trench of the first metrology site is no more than the target thickness. A second thickness of the insulating material in the trench of the second metrology site is measured, and values based on the first thickness and the second thickness are monitored as the polishing process parameters for the integrated circuit structure.
    • 一种用于监测基板上的集成电路结构的抛光工艺参数的方法。 第一个计量站点被构建在基板上。 第一个测量站点代表了高密度集成电路结构的设计极限。 第一计量站点是通过在抛光停止材料的相对大的表面区域内放置相对较小的水平表面区域沟槽而形成的。 第二个计量站点也在基板上构建。 第二个测量站点是低密度集成电路结构的设计极限。 第二计量站点通过在抛光停止材料的相对小的表面区域内放置相对较大的水平表面区域沟槽而形成。 衬底被绝缘材料层覆盖,从而至少填充沟槽。 计算出将沟槽基本上填充到抛光停止材料领域的顶表面所需的绝缘材料的目标厚度。 抛光衬底直到第一测量点的沟槽中的绝缘材料的第一厚度不超过目标厚度。 测量第二测量位置的沟槽中的绝缘材料的第二厚度,并且监测基于第一厚度和第二厚度的值作为用于集成电路结构的抛光工艺参数。
    • 35. 发明授权
    • Apparatus and method for cleaning semiconductor wafer
    • 用于清洁半导体晶片的装置和方法
    • US6110294A
    • 2000-08-29
    • US60521
    • 1998-04-14
    • Kevin D. ShipleyPeter A. Burke
    • Kevin D. ShipleyPeter A. Burke
    • B08B1/04B24B37/04B24D13/14H01L21/00B08B11/00
    • H01L21/67046B08B1/04
    • A method and apparatus for cleaning a semiconductor wafer. The apparatus preferably includes a brush holder that may include a base and a connection stud extending from the base. The base preferably includes a receiving lip for receiving a brush that is disposed on its lower surface. The brush preferably includes a substantially flexible material and a plurality of protrusions for contacting a semiconductor wafer. A backing plate preferably is attached to one side of the brush for connecting the brush to the brush holder. The backing plate preferably further includes an outer edge capable of forming a snap-fit engagement within the receiving lip of the brush holder to: (a) facilitate periodic replacement of the brush and (b) form a mechanical connection between the brush and brush holder that can withstand the presence of relatively basic or acidic cleaning agents. A rotatable shaft is connected to the connection stud. The rotatable shaft includes a conduit running through the shaft for flowing cleaning fluid through a borehole in the connection stud and brush holder and through an opening in the backing plate and brush so that cleaning fluid may be directly dispensed through the shaft conduit to the wafer. This cleaning fluid disbursement technique improves cleaning and prevents particles from being left behind as the brush is removed from the wafer.
    • 一种用于清洁半导体晶片的方法和装置。 该装置优选地包括可以包括基部的电刷架和从底座延伸的连接柱。 基部优选地包括用于接收设置在其下表面上的刷子的接收唇缘。 刷子优选地包括基本上柔性的材料和用于接触半导体晶片的多个突起。 背板优选地附接到刷子的一侧以将刷子连接到刷子保持器。 背板优选还包括外边缘,其能够在电刷架的接收唇缘内形成卡扣配合接合,以便:(a)促进电刷的定期更换,和(b)在电刷和电刷架之间形成机械连接 可以承受相对碱性或酸性清洁剂的存在。 可旋转轴连接到连接柱。 旋转轴包括一个穿过轴的导管,用于使清洁流体流过连接螺柱和电刷架中的钻孔,并穿过背板和刷子中的开口,使清洗流体可以通过轴导管直接分配到晶片。 这种清洁液支付技术改进了清洁,并且防止当刷子从晶片上移除时颗粒被留下。