专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07283305B2 Solid state image pickup device, method for producing the same, and image pickup system comprising the solid state image pickup device 有权
标题翻译：固体摄像装置及其制造方法以及包括固体摄像装置的摄像系统
公开(公告)号：US07283305B2
公开(公告)日：2007-10-16
申请号：US10991396
申请日：2004-11-19
申请人： Akira Okita , Hiroki Hiyama , Hideaki Takada
发明人： Akira Okita , Hiroki Hiyama , Hideaki Takada
IPC分类号： G02B27/10
CPC分类号： H01L27/14627 , H01L27/14623 , H01L31/02327
摘要： The present invention inhibits variations in sensitivity of an image pickup element formed in a jointed area in the image pickup element produced using exposure in a joined fashion.The image pickup element 11 has a light receiving area 102 formed on a substrate 101, an insulation layer 104 deposited on a light receiving area 102, and a microlens 106 formed on the insulation layer 104 and collecting incident light onto the light receiving area 102. A pattern 103L and a pattern 103R with an optical axis of the microlens 106 as a divisional line by exposure in a joined fashion in different exposure steps are arranged with an optical path for incident light collected by the microlens 106 held therebetween, and are provided so that a clearance from the optical path equals a distance L. The distance L is set to be larger than the alignment accuracy of an exposure device exposing the patterns 103L and 103R.
摘要翻译：本发明抑制了以联合方式使用曝光产生的图像拾取元件中形成在接合区域中的图像拾取元件的灵敏度变化。图像拾取元件11具有形成在基板101上的光接收区域102，沉积在光接收区域102上的绝缘层104和形成在绝缘层104上的微透镜106，并将入射光收集到光接收区域102上。在不同的曝光步骤中以连接方式曝光的微透镜106的光轴作为分割线的图案103L和图案103R被布置有用于由保持在其间的微透镜106收集的入射光的光路，并且是被设置为使得从光路的间隙等于距离L.距离L被设定为大于曝光图案103L和103R的曝光装置的对准精度。

32. 发明申请

US20050168618A1 Solid state image pick-up device and image pick-up system 有权
标题翻译：固态图像拾取装置和图像拾取系统
公开(公告)号：US20050168618A1
公开(公告)日：2005-08-04
申请号：US11041728
申请日：2005-01-25
申请人： Akira Okita , Hiroki Hiyama , Hideaki Takada
发明人： Akira Okita , Hiroki Hiyama , Hideaki Takada
IPC分类号： H01L27/146 , H04N5/225 , H04N5/335 , H04N5/359 , H04N5/361 , H04N5/365 , H04N5/374
CPC分类号： H01L27/14603
摘要： A solid state image pick-up device has shields for suppressing deterioration in a ratio of an output signal to output noises caused by crosstalks, suppressing deterioration in a ratio of the output signal to output noises caused by a coupling capacity, and suppressing deterioration in a ratio of the output signal to output noises caused by imbalance is provided. Shielding lines 301, 302, and 303 are arranged in a layer to which output lines 210 and 220 belong. Shielding lines 304, 305, and 306 are arranged over the shielding lines 301, 302, and 303, respectively. Further, shielding pins 307, 308, and 309 are arranged between the shielding lines 301 and 304, between the shielding lines 302 and 305, and between the shielding lines 303 and 306, respectively. No shielding line is arranged over output lines 210 and 220. A structure is made to be plane-symmetrical with respect to a plane including a center line of the shielding line 301 and a plane including a center line of the shielding line 304.
摘要翻译：固态摄像装置具有用于抑制输出信号与输出由串扰引起的噪声的比例的劣化的屏蔽，抑制输出信号的比例与输出由耦合电容引起的噪声的比例的劣化，并且抑制提供了由不平衡引起的输出信号与输出噪声的比率。屏蔽线301,302和303被布置在输出线210和220所属的层中。屏蔽线304,305和306分别设置在屏蔽线301,302和303上。此外，屏蔽引脚307,308和309分别布置在屏蔽线301和304之间，屏蔽线302和305之间以及屏蔽线303和306之间。没有屏蔽线布置在输出线210和220上。将结构相对于包括屏蔽线301的中心线的平面和包括屏蔽线304的中心线的平面进行平面对称。

33. 发明申请

US20050168605A1 Photoelectric conversion device and image pickup system using the photoelectric conversion device 失效
标题翻译：光电转换装置及摄像系统采用光电转换装置
公开(公告)号：US20050168605A1
公开(公告)日：2005-08-04
申请号：US11030074
申请日：2005-01-07
申请人： Hiroki Hiyama , Akira Okita , Hideaki Takada
发明人： Hiroki Hiyama , Akira Okita , Hideaki Takada
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/374
CPC分类号： H04N5/378
摘要： It is a principle object of the present invention to reduce a voltage drop of a common power supply wiring in a plurality of amplification circuits to suppress crosstalk generated in other signal output lines. A photoelectric conversion device includes: a plurality of pixels each having a photoelectric conversion area; a plurality of signal output lines through which electrical signals are to be read out from the plurality of pixels; and a plurality of amplification circuits provided in correspondence to the plurality of signal output lines for amplifying the electrical signals, respectively, the plurality of amplification circuits, including at least one constant current circuit portion and being disposed in a predetermined direction of repetitive dispersion, in which a constant current circuit portion includes at least a source grounded field effect transistor (the gate electrode is designated by reference symbol 124G), and a direction (X-axis direction) of a channel length of the source grounded field effect transistor is different from the direction of repetitive disposition of the amplification circuits.
摘要翻译：本发明的主要目的是减少多个放大电路中的公共电源布线的电压降，以抑制在其它信号输出线中产生的串扰。光电转换装置包括：具有光电转换区域的多个像素; 多个信号输出线，通过该信号输出线从多个像素读出电信号; 以及多个对应于多个信号输出线设置的放大电路，用于分别放大多个放大电路，所述多个放大电路包括至少一个恒流电路部分，并且以预定的重复分散方向设置在恒定电流电路部分至少包括源极接地场效应晶体管（栅电极由附图标记124G表示），源极接地场效应晶体管的沟道长度的方向（X轴方向）不同从放大电路的重复配置的方向。

34. 发明授权

US08717475B2 Image pickup apparatus 有权
标题翻译：摄像设备
公开(公告)号：US08717475B2
公开(公告)日：2014-05-06
申请号：US13309517
申请日：2011-12-01
申请人： Hiroki Hiyama , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Masaru Fujimura , Tomoko Eguchi , Masanori Ogura
发明人： Hiroki Hiyama , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Masaru Fujimura , Tomoko Eguchi , Masanori Ogura
IPC分类号： H04N5/335
CPC分类号： H04N5/3742 , H04N5/376
摘要： There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.
摘要翻译：提供了一种图像拾取装置，包括多个像素，每个像素包括将入射光转换成电信号并累积电信号的光电转换单元，放大并输出来自光电转换单元的信号的放大器晶体管，转移晶体管其将累积在光电转换单元中的电信号传送到放大器晶体管，以及执行预定处理的处理晶体管，以及控制电路，其设置提供给转移晶体管的控制电极的信号电平以关闭转移晶体管低于提供给处理晶体管的控制电极的信号电平，以便关闭处理晶体管。

35. 发明申请

US20110242382A1 IMAGE PICKUP APPARATUS 有权
标题翻译：图像拾取装置
公开(公告)号：US20110242382A1
公开(公告)日：2011-10-06
申请号：US13158613
申请日：2011-06-13
申请人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama
发明人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama
IPC分类号： H04N5/335
CPC分类号： H04N5/232 , H04N5/361 , H04N5/3658 , H04N5/3742 , H04N5/3745 , H04N5/378
摘要： There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.
摘要翻译：提供了一种图像拾取装置，包括：像素，包括光电转换元件和用于放大和输出在光电转换元件处产生的信号的放大元件;负载晶体管，用于控制在放大元件处流动的电流;以及电位控制用于抑制作为放大元件的输出侧的负载晶体管的第一主电极区域中的电位波动的元件。

36. 发明授权

US07986362B2 Image pickup apparatus maintaining constant potential of load-transistor main electrode 有权
标题翻译：负载三极管主电极保持恒定电位的摄像装置
公开(公告)号：US07986362B2
公开(公告)日：2011-07-26
申请号：US11861790
申请日：2007-09-26
申请人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama
发明人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama
IPC分类号： H04N5/335
CPC分类号： H04N5/232 , H04N5/361 , H04N5/3658 , H04N5/3742 , H04N5/3745 , H04N5/378
摘要： There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.
摘要翻译：提供了一种图像拾取装置，包括：像素，包括光电转换元件和用于放大和输出在光电转换元件处产生的信号的放大元件;负载晶体管，用于控制在放大元件处流动的电流;以及电位控制用于抑制作为放大元件的输出侧的负载晶体管的第一主电极区域中的电位波动的元件。

37. 发明授权

US07274394B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07274394B2
公开(公告)日：2007-09-25
申请号：US10622540
申请日：2003-07-21
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N3/14 , H01L21/336 , H01L31/062 , H01L27/00
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type. The second energy is smaller than the first energy, and the first and second angles are respectively angles to a direction normal to a surface of the semiconductor substrate, with the second angle being larger than the first angle, and the first and third steps being performed separately.
摘要翻译：一种制造具有光电转换单元，转移MOS晶体管，设置在绝缘膜上的栅极电极和设置有光电转换单元和转移MOS晶体管的半导体衬底的MOS型固体摄像器件的方法包括通过使用栅电极作为掩模以第一角度以第一角度离子注入第二导电类型的杂质形成第二半导体区域的第一步骤，以及通过离子注入形成第五半导体区域的第二步骤使用栅电极作为掩模，以第二能量以第二角度的第二导电类型的杂质。通过离子注入第二导电类型的杂质形成第四半导体区域。第二能量小于第一能量，并且第一和第二角度分别是与垂直于半导体衬底的表面的方向的角度，其中第二角度大于第一角度，并且执行第一和第三步骤分别。

38. 发明授权

US07129985B1 Image sensing apparatus arranged on a single substrate 有权
标题翻译：图像感测装置布置在单个基板上
公开(公告)号：US07129985B1
公开(公告)日：2006-10-31
申请号：US09444675
申请日：1999-11-22
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Tetsunobu Kochi , Katsuhito Sakurai , Toshiaki Endo , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Tetsunobu Kochi , Katsuhito Sakurai , Toshiaki Endo , Hiroki Hiyama
IPC分类号： H04N5/225 , H04N5/335
CPC分类号： H04N5/335
摘要： A sensor integrated on a single semiconductor substrate comprises a sensor block including a pixel unit including a plurality of pixels each including a light-receiving element and scanning units for selecting a pixel of the pixel unit, and a signal processing block for processing a signal output from the sensor block. To reduce noise and power consumption, the power supply voltage or the amplitude or high level of a clock signal used in the sensor block is higher than the power supply voltage of the signal processing block.
摘要翻译：集成在单个半导体衬底上的传感器包括传感器块，其包括像素单元，该像素单元包括多个像素，每个像素包括光接收元件和用于选择像素单元的像素的扫描单元，以及用于处理信号输出的信号处理块从传感器块。为了降低噪声和功耗，传感器模块中使用的时钟信号的电源电压或振幅或高电平高于信号处理模块的电源电压。

39. 发明授权

US06653617B2 Photoelectric conversion device 有权
公开(公告)号：US06653617B2
公开(公告)日：2003-11-25
申请号：US09897033
申请日：2001-07-03
申请人： Hiroki Hiyama , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Masaru Fujimura , Tomoko Eguchi
发明人： Hiroki Hiyama , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Masaru Fujimura , Tomoko Eguchi
IPC分类号： H01L3100
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623
摘要： A photoelectric conversion device having a substrate, a light reception area formed on a surface of the substrate, the light reception area having at least one unit pixel, an insulating layer formed on the substrate including the light reception area, and a light shielding group made of a plurality of light shieldings and formed through the insulating layer along a direction perpendicular to the substrate, the light shielding group surrounding the light reception area.

40. 发明授权

US08138528B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08138528B2
公开(公告)日：2012-03-20
申请号：US12716488
申请日：2010-03-03
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
摘要翻译：在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体在转移MOS晶体管的栅极电极下方。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式