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31. 发明授权

US08009217B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08009217B2
公开(公告)日：2011-08-30
申请号：US12427952
申请日：2009-04-22
申请人： Ryohei Miyagawa
发明人： Ryohei Miyagawa
IPC分类号： H04N5/335 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14612 , H01L27/14689
摘要： In a solid-state imaging device, provided is a solid-state imaging device in which a first gate insulation film 22 for the readout transistor 12 in a pixel is formed so as to be thicker than a second gate insulation film 23 for an amplification transistor 14 in the pixel, and the second gate insulation film 23 for the amplification transistor 14 in the pixel is formed so as to be thicker than a third gate insulation film 24 for an n-type micro transistor 17 and a p-type micro transistor 18 in a peripheral region outside the pixel, whereby it is possible to suppress a 1/f noise of the amplification transistor 14 and also possible to increase a saturated charge amount.
摘要翻译：在固态成像装置中，提供了一种固态成像装置，其中用于像素中的读出晶体管12的第一栅极绝缘膜22形成为比用于放大晶体管的第二栅极绝缘膜23更厚像素中的放大晶体管14的第二栅极绝缘膜23形成为比n型微晶体管17和p型微晶体管18的第三栅极绝缘膜24厚在像素外部的周边区域中，由此可以抑制放大晶体管14的1 / f噪声，并且还可以增加饱和电荷量。

32. 发明申请

US20090046174A1 SOLID STATE IMAGING DEVICE AND DRIVING METHOD THEREFOR 审中-公开
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US20090046174A1
公开(公告)日：2009-02-19
申请号：US12158259
申请日：2006-12-19
申请人： Koujirou Yoneda , Ryohei Miyagawa
发明人： Koujirou Yoneda , Ryohei Miyagawa
IPC分类号： H04N5/76 , H04N5/335
CPC分类号： H04N5/341 , H04N5/3577 , H04N5/3741
摘要： A solid state imaging device includes an imaging circuit 50 and a signal processing circuit 51. The imaging circuit 50 includes a plurality of pixels arranged in a matrix and outputs signals of the pixels line by line as an imaging signal containing a discontinuous portion. The signal processing circuit 51 has a memory 54 which temporarily stores the imaging signal and a memory controller 53 which writes and reads the imaging signal to and from the memory 54. The signal processing circuit converts the imaging signal containing the discontinuous portion into a continuous image signal.
摘要翻译：固态成像装置包括成像电路50和信号处理电路51.成像电路50包括排列成矩阵的多个像素，并逐行地输出像素的信号作为包含不连续部分的成像信号。信号处理电路51具有临时存储成像信号的存储器54和向存储器54写入和读取成像信号的存储器控制器53.信号处理电路将包含不连续部分的成像信号转换为连续图像信号。

33. 发明授权

US07015522B2 Solid-state image sensor 有权
标题翻译：固态图像传感器
公开(公告)号：US07015522B2
公开(公告)日：2006-03-21
申请号：US11099629
申请日：2005-04-06
申请人： Ryohei Miyagawa , Shoji Tanaka
发明人： Ryohei Miyagawa , Shoji Tanaka
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L31/035281 , H01L31/03529
摘要： A solid-state image sensor of the present invention includes a semiconductor substrate 1 having a plurality of pixels, and each of the pixels comprises an impurity layer a photoelectric converting layer, a read out region, and a gate electrode. The impurity layer includes an adjoining portion adjacent to a portion of the substrate directly beneath the gate electrode The adjoining portion includes sub-portions aligned along a width direction of a gate that is orthogonal to a transfer direction of a signal charge and a thickness direction of the substrate. An impurity density in the sub-portion 2a including a center of the adjoining portion is lower than that in the sub-portions.
摘要翻译：本发明的固态图像传感器包括具有多个像素的半导体基板1，并且每个像素包括杂质层，光电转换层，读出区域和栅电极。杂质层包括与栅电极正下方的基板的一部分相邻的邻接部分。邻接部分包括沿栅极的宽度方向排列的子部分，该栅极与信号电荷的传输方向正交，底物。包括相邻部分的中心的子部分2a中的杂质浓度低于子部分中的杂质浓度。

34. 发明授权

US06943389B2 Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US06943389B2
公开(公告)日：2005-09-13
申请号：US10669421
申请日：2003-09-25
申请人： Tetsuya Yamaguchi , Ryohei Miyagawa , Yoshitaka Egawa
发明人： Tetsuya Yamaguchi , Ryohei Miyagawa , Yoshitaka Egawa
IPC分类号： H01L27/146 , H04N5/225 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/374 , H01L27/148
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14643 , H04N5/2251 , H04N5/335 , H04N5/365 , H04N5/3745 , H04N5/37457
摘要： A solid-state imaging device comprises an image pickup unit having unit cells including opto-electrical converter elements, said unit cells being disposed in a two-dimensional array, a selection line made of polysilicon for selectively determining the unit cells in the same row within the image pickup unit, a read-out line made of polysilicon for reading out an electric charge accumulated in the opto-electrical converter elements of the unit cells in the same row within the image pickup unit, a signal line transmitting pixel signals produced from the unit cells in the same row within the image pickup unit, a reset line made of polysilicon for discharging the unit cells in the same row within the image pickup unit down to a desired voltage level, a driver circuit located on one side of the image pickup unit for supplying drive signals to the read-out line, the selection line, and the reset line, respectively, and a read-out auxiliary wiring disposed along at least the read-out line and electrically connected to the read-out line at a plurality of junctions, the read-out auxiliary wiring being of comparatively lower electric resistivity than the read-out line.
摘要翻译：固态成像装置包括具有包括光电转换器元件的单位单元的图像拾取单元，所述单位单元以二维阵列布置，由多晶硅制成的选择线，用于选择性地确定在同一行内的单元电池内图像拾取单元，由多晶硅制成的读出线，用于读出积累在图像拾取单元内的同一行的单位单元的光电转换元件中的电荷;信号线，在图像拾取单元内的相同行中的单位单元，由多晶硅制成的复位线，用于将图像拾取单元内的同一行中的单位单元放电至期望的电压电平，位于图像拾取器一侧的驱动器电路分别向读出线，选择线和复位线提供驱动信号的单元，以及至少沿着读出线设置的读出辅助布线，以及在多个接合处电连接到读出线，读出的辅助布线具有比读出的线更低的电阻率。

35. 发明申请

US20050161584A1 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US20050161584A1
公开(公告)日：2005-07-28
申请号：US10916590
申请日：2004-08-12
申请人： Syouji Tanaka , Ryohei Miyagawa , Toshiya Fujii , Yasuhiro Tanaka , Michihiro Yamagata , Hiroaki Okayama
发明人： Syouji Tanaka , Ryohei Miyagawa , Toshiya Fujii , Yasuhiro Tanaka , Michihiro Yamagata , Hiroaki Okayama
IPC分类号： G02B3/00 , H01L27/14 , H01L27/146 , H01L31/0232 , H01L31/10 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/00 , G11B7/135
CPC分类号： H01L27/14601 , H01L27/14603 , H01L27/14605 , H01L27/14625 , H01L27/14627 , H01L27/14685
摘要： A solid-state imaging device includes pixels 2 arranged two-dimensionally on a semiconductor substrate 1. In a predetermined area in each pixel is formed a light-sensitive area 3 for receiving incident light 11, and each pixel includes a photoelectric conversion portion 4 for converting the incident light into a signal charge. In at least some of the pixels, the center of the light-sensitive area is offset from the center of the pixel when seen from directly above a principal surface of the semiconductor substrate. Each pixel further includes a light-path change member 12a and 12b for deflecting incident light traveling toward the center of the pixel so as to be directed toward the center of the light-sensitive area. Thus, a solid-state imaging device simultaneously realizing the miniaturization of pixels and a high image quality is provided.
摘要翻译：固体摄像器件包括二维布置在半导体衬底1上的像素2。在每个像素中的预定区域中形成有用于接收入射光11的感光区域3，并且每个像素包括用于将入射光转换成信号电荷的光电转换部分4。在至少一些像素中，当从半导体衬底的主表面的正上方观察时，感光区域的中心偏离像素的中心。每个像素还包括光路改变构件12a和12b，用于偏转朝向像素的中心行进的入射光，以便朝向感光区域的中心。因此，提供了同时实现像素的小型化和高图像质量的固态成像装置。

36. 发明授权

US06528342B2 Solid state imaging apparatus, method of manufacturing the same and video system using such solid state imaging apparatus 有权
标题翻译：固态成像装置，其制造方法以及使用这种固态成像装置的视频系统
公开(公告)号：US06528342B2
公开(公告)日：2003-03-04
申请号：US09885071
申请日：2001-06-21
申请人： Ryohei Miyagawa , Hirofumi Yamashita , Michio Sasaki , Eiji Oba , Nagataka Tanaka , Keiji Mabuchi
发明人： Ryohei Miyagawa , Hirofumi Yamashita , Michio Sasaki , Eiji Oba , Nagataka Tanaka , Keiji Mabuchi
IPC分类号： H01L2100
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14621 , H01L27/14683
摘要： This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.
摘要翻译：本发明防止具有大量MOS传感器缺陷的LOCOS区域的端部耗尽，从而减少在LOCOS区域的端部部分的缺陷中发生的漏电流。在用于构成具有p型层的光电二极管的p型衬底的表面区域中形成n型层区域。通过氧化硅衬底的一部分，在硅衬底的表面区域中的p +型层上形成LOCOS区域作为器件分离区域。 n型层区域和LOCOS区域彼此分开预定距离。形成接触区域并与n型层区域分离距离等于MOS传感器的读出晶体管的栅电极的距离。布线层连接到接触区域。然后，形成平面化层以覆盖n型层区域，LOCOS区域，栅电极和布线层。

37. 发明授权

US06507365B1 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US06507365B1
公开(公告)日：2003-01-14
申请号：US09450749
申请日：1999-11-30
申请人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
发明人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
IPC分类号： H04N314
CPC分类号： H04N5/361 , H04N5/23274 , H04N5/2357 , H04N5/3452 , H04N5/3454 , H04N5/353 , H04N5/374
摘要： A solid-state imaging device with a variable (continuous) electronic shutter function comprises an imaging area where unit cells with photodiodes acting as pixels are arranged two-dimensionally, read lines for driving the read transistors in each pixel row, vertical selection lines for driving the vertical selection transistors in each pixel row, a vertical driving circuit for selectively driving vertical selection lines, vertical signal lines for outputting the signal from each unit cell in the pixel rows driven sequentially, and a row selection circuit for controlling the vertical driving circuit in such a manner that the vertical driving circuit drives the read transistors in each pixel row with the desired signal storage timing and signal read timing twice in that order and thereby drives the vertical selection transistors in the pixel row in synchronization with the signal read timing.
摘要翻译：具有可变（连续）电子快门功能的固态成像装置包括成像区域，其中以二维作为像素的光电二极管的单位单元被二维布置，用于驱动每个像素行中的读取晶体管的读取线，用于驱动的垂直选择线每个像素行中的垂直选择晶体管，用于选择性地驱动垂直选择线的垂直驱动电路，用于输出依次驱动的像素行中的每个单元的信号的垂直信号线和用于控制垂直驱动电路的行选择电路垂直驱动电路以期望的信号存储定时和信号读取定时以该顺序驱动每个像素行中的读取晶体管，从而与信号读取定时同步地驱动像素行中的垂直选择晶体管。

38. 发明授权

US07755150B2 MOS solid-state image pickup device and manufacturing method thereof 有权
标题翻译： MOS固体摄像装置及其制造方法
公开(公告)号：US07755150B2
公开(公告)日：2010-07-13
申请号：US11808042
申请日：2007-06-06
申请人： Emi Ohtsuka , Mikiya Uchida , Ryohei Miyagawa
发明人： Emi Ohtsuka , Mikiya Uchida , Ryohei Miyagawa
IPC分类号： H01L27/14
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14689
摘要： An N-type epitaxial layer 115, which is formed above an N-type semiconductor substrate 114 in each of a pixel region and a peripheral circuit region; a first P-type well 1 formed above the N-type epitaxial layer 115 in the pixel region; and light receiving regions 117, which are formed within the first P-type well 1 and each of which is a component of a photodiode, are included. The peripheral circuit region includes: second P-type wells 2, which are formed from a surface 200 of the peripheral circuit region to a desired depth and each of which is a component of an N-Channel MOS transistor; an N-type well 3 which is formed from the surface 200 of the peripheral circuit region to a desired depth and which is a component of a P-Channel MOS transistor; and a third P-type well 4 which is formed so as to have such a shape as to isolate the N-type well 3 from the N-type epitaxial layer 115 and which has a higher impurity concentration than that of the first P-type well 1.
摘要翻译：在像素区域和外围电路区域中的每一个中形成在N型半导体衬底114上方的N型外延层115; 形成在像素区域中的N型外延层115的上方的第一P型阱1; 并且包括形成在第一P型阱1内并且其每一个都是光电二极管的分量的光接收区域117。外围电路区域包括：第二P型阱2，其由外围电路区域的表面200形成为期望的深度，并且每个都是N沟道MOS晶体管的一部分; N型阱3，其由外围电路区域的表面200形成为期望的深度，并且是P沟道MOS晶体管的分量; 以及第三P型阱4，其形成为具有使N型阱3与N型外延层115隔离的杂质浓度比第一P型阱高的杂质浓度好1。

39. 发明授权

US07626622B2 Solid state image pickup device and camera using the same 有权
公开(公告)号：US07626622B2
公开(公告)日：2009-12-01
申请号：US10584883
申请日：2005-01-11
申请人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
发明人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H04N5/378
摘要： A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

40. 发明申请

US20090021619A1 Solid state image pickup device and camera using the same 有权
标题翻译：固态摄像装置和使用相机的相机
公开(公告)号：US20090021619A1
公开(公告)日：2009-01-22
申请号：US10584883
申请日：2005-01-11
申请人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
发明人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H04N5/378
摘要： A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.
摘要翻译：固态图像拾取装置110具有：二维排列的多个像素单元10，包括将光转换为电荷的光电转换单元（光电二极管PD）和将光转换成电荷的放大单元（放大器Q13）充电到电压并输出; 多个噪声信号去除单元（噪声消除单元40），其针对每列设置一个，并且去除包含在属于列的像素单元10的放大器Q31输出的电压中的噪声; 以及多个列放大单元（列放大器70），其放大从像素单元10的放大器Q13输出的电压，并将放大的电压输出到噪声消除单元40，并且能够以低功率提高灵敏度和降低噪声消费。

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