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31. 发明申请

US20050121681A1 Light-emitting device comprising a gallium-nitride-group compound-semiconductor 有权
公开(公告)号：US20050121681A1
公开(公告)日：2005-06-09
申请号：US11022801
申请日：2004-12-28
申请人： Yasunari Oku , Hidenori Kamei
发明人： Yasunari Oku , Hidenori Kamei
IPC分类号： H01L33/32 , H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01S5/34333
摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

32. 发明授权

US06497944B1 Light-emitting device comprising a gallium-nitride-group compound-semiconductor 有权
标题翻译：包含氮化镓族化合物半导体的发光装置
公开(公告)号：US06497944B1
公开(公告)日：2002-12-24
申请号：US09219428
申请日：1998-12-23
申请人： Yasunari Oku , Hidenori Kamei
发明人： Yasunari Oku , Hidenori Kamei
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01S5/34333 , Y10S428/917 , Y10T428/24942 , Y10T428/2495
摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using an insulating substrate, the operating voltage is lowered and at the same time the occurrence of cracks during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on an insulating substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, a first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.
摘要翻译：在使用绝缘性基板的发光氮化镓系化合物半导体装置中，工作电压降低，同时抑制了晶体生长期间的裂纹的发生，提高了制造成品率。该装置包括在绝缘基板上以上述顺序形成的n型层，发光层和p型层的层叠结构，以及形成在n型层的表面上的n侧电极。 n型层是以从衬底的顺序构成具有比第一n型层的载流子浓度高的载流子浓度的第一n型层和第二n型层的层叠层。随着形成在其上的n型层和n侧电极之间的接触电阻减小，发光器件的工作电压降低，功耗降低。

33. 发明授权

US06445127B1 Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the same 有权
标题翻译：包含氮化镓族化合物半导体的发光器件及其制造方法
公开(公告)号：US06445127B1
公开(公告)日：2002-09-03
申请号：US09250732
申请日：1999-02-16
申请人： Yasunari Oku , Hidenori Kamei
发明人： Yasunari Oku , Hidenori Kamei
IPC分类号： H01J162
CPC分类号： H01L33/32 , H01L33/0012
摘要： A gallium-nitride-group compound-semiconductor light-emitting device having an improved luminous intensity that makes it more suitable for use in the full-color outdoor display of an advanced performance. A gallium-nitride-group compound-semiconductor light-emitting device comprising an n-type layer 3, a light-emitting layer 4 and p-type layers 5, 6, the light-emitting layer 4 is doped with a p-type impurity, Mg for example, in a certain specific concentration, so a pn junction is formed within the light-emitting layer 4 and a light emission caused by the electron transition between conduction band and valence band is obtained. In a GaN group compound-semiconductor light-emitting device comprising at least an n-type clad layer 3, a p-type clad layer 5 and a light-emitting layer formed in between the clad layers 3, 5, stacked on a substrate 1. The light-emitting layer 4 is structured as a substance of stacked layers including an n-type layer 41 and a p-type layer 42, or these layers plus an i-type layer formed in between the layers 41 and 42, so a pn junction is formed within the light-emitting layer 4 itself. The injection of electrons and holes into the light-emitting layer 4 is expedited and the luminous intensity of the light-emitting layer 4 is increased.
摘要翻译：具有改善的发光强度的氮化镓族化合物半导体发光器件，使其更适用于高级性能的全色室外显示器。包含n型层3，发光层4和p型层5,6的氮化镓族化合物半导体发光器件，发光层4掺杂有p型杂质，例如Mg，在一定的浓度下，因此在发光层4内形成pn结，获得由导带和价带之间的电子跃迁引起的发光。在包括至少n型覆盖层3，p型覆盖层5和形成在覆盖层3,5之间的发光层的GaN族化合物半导体发光器件中，层叠在基板1上发光层4被构造为包括n型层41和p型层42的堆叠层的物质，或这些层加上形成在层41和42之间的i型层，因此 pn结形成在发光层4本身内。电子和空穴注入发光层4的加速，并且发光层4的发光强度增加。

34. 发明授权

US08399272B2 Method of manufacturing semiconductor light emitting element 失效
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08399272B2
公开(公告)日：2013-03-19
申请号：US12998521
申请日：2009-10-27
申请人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
发明人： Kazuyuki Yamae , Hiroshi Fukshima , Masaharu Yasuda , Tomoya Iwahashi , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L21/786
CPC分类号： H01S5/0207 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/02492 , H01S5/32341
摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.
摘要翻译：一种制造半导体发光元件的方法包括在具有透明性的第一晶片上形成多层氮化物半导体层的半导体层形成步骤; 将多层氮化物半导体层接合到第一晶片的接合步骤; 沟槽形成步骤，形成从第一晶片的下表面延伸到多层氮化物半导体层的凹槽; 施加步骤，通过所述第一晶片向所述多层氮化物半导体层的下表面施加第一光，以降低所述多层氮化物半导体层与所述第一晶片之间的结合力; 分离步骤，从所述多层氮化物半导体层分离所述第一晶片; 以及切割步骤，沿着所述凹槽切割所述第二晶片以分成多个所述半导体发光元件。

35. 发明申请

US20120126276A1 LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE 有权
标题翻译：发光元件和发光装置
公开(公告)号：US20120126276A1
公开(公告)日：2012-05-24
申请号：US13388612
申请日：2010-07-27
申请人： Atsuhiro Hori , Hidenori Kamei
发明人： Atsuhiro Hori , Hidenori Kamei
IPC分类号： H01L33/36
CPC分类号： H01L33/405 , H01L33/20 , H01L33/44 , H01L33/46
摘要： A light emitting element and a light emitting device for which light extraction efficiency is enhanced are provided.A light emitting element 10 includes a substrate 1 having light transmittance, a semiconductor layer 2 in which an n-type layer 2a, an active layer 2b, and a p-type layer 2c are stacked, a reflective electrode 3 stacked on the semiconductor layer 2 and configured to reflect light emitted from the active layer 2b, toward the substrate 1, a p-side pad electrode 4 stacked on the reflective electrode 3, an insulating film 6 covering a side surface of the semiconductor layer 2 and having light transmittance, a reflective film 7 stacked on the insulating film 6 and having light reflectivity, and an n-side electrode 5 provided on the substrate 1.
摘要翻译：提供了一种发光元件和提高光提取效率的发光器件。发光元件10包括具有透光性的基板1，堆叠n型层2a，有源层2b和p型层2c的半导体层2，层叠在半导体层上的反射电极3 2，被配置为将从有源层2b发射的光朝向基板1反射，堆叠在反射电极3上的p侧焊盘电极4，覆盖半导体层2的侧面并具有透光性的绝缘膜6，叠层在绝缘膜6上并具有光反射率的反射膜7和设置在基板1上的n侧电极5。

36. 发明授权

US07915714B2 Semiconductor light emitting element and wafer 有权
标题翻译：半导体发光元件和晶圆
公开(公告)号：US07915714B2
公开(公告)日：2011-03-29
申请号：US12298664
申请日：2007-04-27
申请人： Hidenori Kamei , Syuuichi Shinagawa
发明人： Hidenori Kamei , Syuuichi Shinagawa
IPC分类号： H01L33/16
CPC分类号： H01L33/16 , H01L33/0095
摘要： There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element 1 formed by laminating a compound semiconductor layer 3 on a single crystal substrate, and dividing the single crystal substrate into pieces, the side faces 21 to 24 of each of substrate pieces 2 as the divided single crystal substrate are formed such that the side face 21 used as the reference of the substrate piece 2 forms an angle of 15° with respect to the (1-100) plane, and that the side faces 21 to 24 are formed of planes different from cleaved planes of a crystalline structure in the single crystal substrate.
摘要翻译：提供了一种半导体发光元件，其允许提高光提取效率而不增加制造步骤的数量和晶片。在通过在单晶衬底上层叠化合物半导体层3并将单晶衬底分割成块而形成的半导体发光元件1中，形成作为分割单晶衬底的每个衬底片2的侧面21至24 使得用作基板2的基准的侧面21相对于（1-100）面形成15°的角度，并且侧面21至24由与晶体结构在单晶衬底中。

37. 发明申请

US20100258830A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100258830A1
公开(公告)日：2010-10-14
申请号：US12743330
申请日：2008-11-13
申请人： Yoshiyuki Ide , Hidenori Kamei , Isamu Yonekura , Kunihiko Obara , Koichi Nakahara , Kouji Nakatsu , Yoshirou Tooya , Toshirou Kitazono , Toshihide Maeda , Kenichi Koya , Takahiro Shirahata
发明人： Yoshiyuki Ide , Hidenori Kamei , Isamu Yonekura , Kunihiko Obara , Koichi Nakahara , Kouji Nakatsu , Yoshirou Tooya , Toshirou Kitazono , Toshihide Maeda , Kenichi Koya , Takahiro Shirahata
IPC分类号： H01L33/52 , H01L33/60 , H01L21/78
CPC分类号： H01L33/60 , H01L24/97 , H01L33/54 , H01L2224/04042 , H01L2224/05111 , H01L2224/05155 , H01L2224/05169 , H01L2224/05573 , H01L2224/0558 , H01L2224/05624 , H01L2224/05639 , H01L2224/05666 , H01L2224/13 , H01L2224/14 , H01L2224/16225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/97 , H01L2924/12035 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices. Thus, a semiconductor light-emitting device having a reflective layer on its side surfaces can be obtained.
摘要翻译：来自半导体发光元件的光在各个方向上行进。因此，不能有效地利用沿着照明方向以外的方向行进的光。已经提出了用于形成具有倾斜侧表面的半导体发光元件以及在倾斜侧表面上形成反射层的装置。然而，由于通过蚀刻方法等形成倾斜表面，所以形成倾斜表面需要很长时间，并且难以控制倾斜表面。作为这些问题的解决方案，将半导体发光元件放置在副安装座基板上并用密封剂密封，然后在相邻的半导体发光元件之间的部分中形成凹槽。所形成的槽被反射材料填充，并且发光表面被抛光。然后，将副安装座基板分割为各个半导体发光元件。因此，可以获得在其侧表面具有反射层的半导体发光器件。

38. 发明授权

US07772769B2 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device 有权
标题翻译：发光半导体器件，发光系统和制造发光半导体器件的方法
公开(公告)号：US07772769B2
公开(公告)日：2010-08-10
申请号：US11908000
申请日：2007-10-19
申请人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
发明人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
IPC分类号： H01J1/62
CPC分类号： C09K11/025 , C09K11/7731 , C09K11/7734 , C09K11/7735 , C09K11/7774 , C09K11/7792 , F21S6/00 , F21S6/003 , F21Y2115/10 , H01L24/45 , H01L33/502 , H01L33/54 , H01L2224/16145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/181 , H05B33/14 , Y02B20/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
摘要翻译：芯片型发光半导体器件包括：基板4; 安装在基板4上的蓝色LED1; 以及由黄色/黄色荧光体颗粒2和基材13（半透明树脂）的混合物制成的发光层3。黄/黄色荧光体颗粒2是一种硅酸盐荧光体，其吸收由蓝色LED1发射的蓝色光，以发射在550nm至600nm的波长范围内具有主发光峰的荧光，并且其包含作为主要（Sr1-a1-b1-xBaa1Cab1Eux）2SiO4（0＆nlE; a1＆nlE; 0.3,0＆nlE; b1＆nlE; 0.8和0

39. 发明申请

US20100047939A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光元件和制造半导体发光器件的方法
公开(公告)号：US20100047939A1
公开(公告)日：2010-02-25
申请号：US12518388
申请日：2008-02-19
申请人： Hidenori Kamei
发明人： Hidenori Kamei
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/22 , H01L2224/13 , H01L2224/16225 , H01L2924/181 , H01L2924/00012
摘要： In a semiconductor light emitting device, light is lost from a side surface of a substrate; therefore, if a substrate side surface occupies a large area, it decreases light extraction efficiency. The area of the substrate side surface may be reduced by reducing a thickness of the substrate. However, a thin substrate has low mechanical strength and is cracked by a stress during work process, and that decreases the yield.A light emitting layer is formed on a substrate. After fixed to a grinding board with wax, the substrate is ground to thin. A support substrate is then bonded to the substrate for reinforcement. The substrate is fixed to an electrode and others, with the support substrate bonded to the substrate. The support substrate is lastly removed.
摘要翻译：在半导体发光器件中，光从衬底的侧表面丢失; 因此，如果基板侧表面占据大面积，则降低光提取效率。可以通过减小基板的厚度来减小基板侧表面的面积。然而，薄的基板具有低的机械强度，并且在加工过程中由于应力而破裂，并且降低了产量。在基板上形成发光层。在用蜡固定到研磨板上之后，将基底研磨成薄。然后将支撑基底结合到基底以进行加强。将基板固定到电极等，其中支撑基板结合到基板。最后去除支撑衬底。

40. 发明授权

US07422504B2 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device 失效
标题翻译：发光半导体器件，发光系统和制造发光半导体器件的方法
公开(公告)号：US07422504B2
公开(公告)日：2008-09-09
申请号：US11143660
申请日：2005-06-03
申请人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
发明人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： C09K11/025 , C09K11/7731 , C09K11/7734 , C09K11/7735 , C09K11/7774 , C09K11/7792 , F21S6/00 , F21S6/003 , F21Y2115/10 , H01L24/45 , H01L33/502 , H01L33/54 , H01L2224/16145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/181 , H05B33/14 , Y02B20/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
摘要翻译：芯片型发光半导体器件包括：基板4; 安装在基板4上的蓝色LED1; 以及由黄色/黄色荧光体颗粒2和基材13（半透明树脂）的混合物制成的发光层3。黄/黄色荧光体颗粒2是一种硅酸盐荧光体，其吸收由蓝色LED1发射的蓝色光，以发射在550nm至600nm的波长范围内具有主发光峰的荧光，并且其包含作为主要组分，由化学式表示的化合物：（Sr 1-a 1-b 1-x Ba）a a1 Ca 2 Sb x x （0 <= a1 <= 0.3,0 <= b1 <= 0.8和0

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