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31. 发明申请

US20100205699A1 MAGNETIC DEVICE INSPECTION APPARATUS AND MAGNETIC DEVICE INSPECTION METHOD 失效
标题翻译：磁性装置检查装置和磁性装置检查方法
公开(公告)号：US20100205699A1
公开(公告)日：2010-08-12
申请号：US12649468
申请日：2009-12-30
申请人： Takehiro TACHIZAKI , Masahiro Watanabe , Hideaki Sasazawa , Minoru Yoshida , Tsuneo Nakagomi , Teruaki Tokutomi
发明人： Takehiro TACHIZAKI , Masahiro Watanabe , Hideaki Sasazawa , Minoru Yoshida , Tsuneo Nakagomi , Teruaki Tokutomi
IPC分类号： G01Q60/52 , G01Q60/50
CPC分类号： G01Q60/54 , G01Q60/56 , G01Q70/12
摘要： Applying an alternating current to a magnetic head as a sample generates an alternate-current magnetic field from the sample. A cantilever includes a probe that is made of a magnetic material or is coated with a magnetic material. The cantilever is displaced when it approaches the sample. Detecting the displacement of the cantilever detects distribution of the magnetic field from the sample. It is possible to fast measure distribution of the magnetic field generated from the sample when a frequency of the alternating current applied to the sample differs from a resonance frequency of the cantilever.
摘要翻译：以交替电流作为样品施加磁头会产生来自样品的交流磁场。悬臂包括由磁性材料制成或涂覆有磁性材料的探针。悬臂在接近样品时被移位。检测悬臂的位移检测样品的磁场分布。当施加到样品的交流电流的频率与悬臂的共振频率不同时，可以快速测量从样品产生的磁场的分布。

32. 发明申请

US20060108524A1 Dimension measuring SEM system, method of evaluating shape of circuit pattern and a system for carrying out the method 有权
标题翻译：尺寸测量SEM系统，电路图案形状评估方法和执行该方法的系统
公开(公告)号：US20060108524A1
公开(公告)日：2006-05-25
申请号：US11260082
申请日：2005-10-28
申请人： Wataru Nagatomo , Ryoichi Matsuoka , Takumichi Sutani , Akiyuki Sugiyama , Yasuhiro Yoshitake , Hideaki Sasazawa
发明人： Wataru Nagatomo , Ryoichi Matsuoka , Takumichi Sutani , Akiyuki Sugiyama , Yasuhiro Yoshitake , Hideaki Sasazawa
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , G03F1/36 , G03F1/68 , G03F7/70625 , H01J37/222 , H01J2237/24578 , H01J2237/24592 , H01J2237/2817
摘要： The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect). To superpose the design data and the measured data on the resist pattern stably and accurately, an exposure simulator calculates a simulated pattern on the basis of photomask data on a photomask for an exposure process and exposure conditions and superposes the simulated pattern and the image of the resist pattern.
摘要翻译：本发明涉及一种尺寸测量SEM系统和电路图案评估系统，其能够实现精确的分钟OPC评估，其随着半导体器件的电路图案的设计图案的逐渐小型化以及电路图案的增加而增加的重要性评估方法。将通过光刻形成的抗蚀剂图案的图像上的设计数据和测量数据叠加以便对由设计数据定义的设计图案与抗蚀剂图案的图像之间的差异进行微分评估，以及表示一维或二维几何特征计算设计图案和抗蚀剂图案之间的差异。在某些情况下，由于OPE效应（光学邻近效应），抗蚀剂图案的形状与设计图案有很大的不同。为了稳定准确地将设计数据和测量数据叠加在抗蚀剂图案上，曝光模拟器基于用于曝光处理和曝光条件的光掩模上的光掩模数据计算模拟图案，并将模拟图案和图像抗蚀图案

33. 发明授权

US07449689B2 Dimension measuring SEM system, method of evaluating shape of circuit pattern and a system for carrying out the method 有权
标题翻译：尺寸测量SEM系统，电路图案形状评估方法和执行该方法的系统
公开(公告)号：US07449689B2
公开(公告)日：2008-11-11
申请号：US11260082
申请日：2005-10-28
申请人： Wataru Nagatomo , Ryoichi Matsuoka , Takumichi Sutani , Akiyuki Sugiyama , Yasuhiro Yoshitake , Hideaki Sasazawa
发明人： Wataru Nagatomo , Ryoichi Matsuoka , Takumichi Sutani , Akiyuki Sugiyama , Yasuhiro Yoshitake , Hideaki Sasazawa
IPC分类号： G03F1/00 , G21K7/00
CPC分类号： H01J37/28 , G03F1/36 , G03F1/68 , G03F7/70625 , H01J37/222 , H01J2237/24578 , H01J2237/24592 , H01J2237/2817
摘要： The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect). To superpose the design data and the measured data on the resist pattern stably and accurately, an exposure simulator calculates a simulated pattern on the basis of photomask data on a photomask for an exposure process and exposure conditions and superposes the simulated pattern and the image of the resist pattern.
摘要翻译：本发明涉及一种尺寸测量SEM系统和电路图案评估系统，其能够实现精确的分钟OPC评估，其随着半导体器件的电路图案的设计图案的逐渐小型化以及电路图案的增加而增加的重要性评估方法。将通过光刻形成的抗蚀剂图案的图像上的设计数据和测量数据叠加以便对由设计数据定义的设计图案与抗蚀剂图案的图像之间的差异进行微小评估，以及表示一维或二维几何特征计算设计图案和抗蚀剂图案之间的差异。在某些情况下，由于OPE效应（光学邻近效应），抗蚀剂图案的形状与设计图案有很大的不同。为了稳定准确地将设计数据和测量数据叠加在抗蚀剂图案上，曝光模拟器基于用于曝光处理和曝光条件的光掩模上的光掩模数据计算模拟图案，并将模拟图案和图像抗蚀图案

34. 发明授权

US07336816B2 Method and apparatus for measuring shape of bumps 失效
标题翻译：用于测量凸块形状的方法和装置
公开(公告)号：US07336816B2
公开(公告)日：2008-02-26
申请号：US10964690
申请日：2004-10-15
申请人： Hideaki Sasazawa , Mineo Nomoto , Masatoshi Yamaga , Chikara Iwata , Masashi Uehara
发明人： Hideaki Sasazawa , Mineo Nomoto , Masatoshi Yamaga , Chikara Iwata , Masashi Uehara
IPC分类号： G06K9/00
CPC分类号： G06T7/0006 , G01B11/0608 , G01B11/24 , G06T2207/30152 , H05K3/4007 , H05K3/4614 , H05K3/4647 , H05K2201/0367 , H05K2203/163
摘要： The present invention provides a bump shape measuring apparatus comprising an illumination optical system which illuminates bumps arranged on a board with illumination light of a low tilt angle to a surface of the board; a detection optical system where reflected light from the bumps is condensed for detection of image signals of the bumps by a high tilt angle to the surface of the board; an image processing unit where an outline of the tip and the base of each of the bumps is calculated based on the image signals of each of the bumps, and geometric characteristics including at least a position and height of each of the bumps are calculated based on the outline of the tip and the base of each of the bumps; and a main control unit where information on the calculated geometric characteristics of the bumps is displayed on a display unit.
摘要翻译：本发明提供一种凸起形状测量装置，包括照明光学系统，其照射布置在基板上的凸起与板的表面具有低倾斜角的照明光; 检测光学系统，其中来自所述凸块的反射光被聚集以便用于检测所述凸块的图像信号与所述板的表面成高度倾斜角; 基于每个凸块的图像信号计算每个凸块的尖端和基部的轮廓的图像处理单元，并且基于每个凸块的至少一个位置和高度的几何特性基于每个凸起的尖端和基部的轮廓; 以及主控制单元，其中在显示单元上显示关于所计算的凸块的几何特性的信息。

35. 发明申请

US20070105243A1 Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern 有权
标题翻译：用于半导体器件生产过程监控的方法和装置以及用于估计图案的截面形状的方法和装置
公开(公告)号：US20070105243A1
公开(公告)日：2007-05-10
申请号：US11592175
申请日：2006-11-03
申请人： Wataru Nagatomo , Hidetoshi Morokuma , Atsushi Miyamoto , Hideaki Sasazawa
发明人： Wataru Nagatomo , Hidetoshi Morokuma , Atsushi Miyamoto , Hideaki Sasazawa
IPC分类号： H01L21/66 , H01L23/58
CPC分类号： H01L22/12 , H01L2924/0002 , Y10S430/143 , H01L2924/00
摘要： In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.
摘要翻译：在曝光处理或蚀刻处理中，从SEM图像计算出用于估计目标评价图案的截面形状，图案的处理条件或图案的装置特性的图像特征量。将图像特征量与将预先存储在数据库中的数据相关联的学习数据与将图案的截面形状，图案的处理条件或者图案的装置特性相关联的学习数据与从SEM计算出的图像特征量相关联图片。由此，非破坏性地计算目标评价图案的截面形状，图案的处理条件或图案的装置特性。

36. 发明授权

US07075884B2 Optical recording apparatus capable of changing the length of synchronization portions 失效
标题翻译：能够改变同步部分的长度的光学记录装置
公开(公告)号：US07075884B2
公开(公告)日：2006-07-11
申请号：US11176320
申请日：2005-07-08
申请人： Hideaki Sasazawa , Tohishiko Nakata , Masahiro Watanabe , Shunichi Matsumoto
发明人： Hideaki Sasazawa , Tohishiko Nakata , Masahiro Watanabe , Shunichi Matsumoto
IPC分类号： G11B7/24
CPC分类号： G11B20/1217 , G11B7/0045 , G11B7/00454 , G11B7/006 , G11B7/00718 , G11B7/00745 , G11B7/013 , G11B20/10009 , G11B20/12 , G11B2020/10898 , G11B2020/1285 , G11B2020/1287 , G11B2020/1288 , G11B2220/216 , G11B2220/2537
摘要： A method for recording information on a rewritable recording medium includes recording first synchronizing signal information in a first synchronizing signal portion on the rewritable recording medium, recording second synchronizing signal information in a second synchronizing signal portion following the first synchronizing signal portion on the rewritable recording medium, recording data information in a data portion of the rewritable recording medium after the second synchronizing signal portion by forming marks in the data portion. The data information corresponds to both ends of each the marks. The marks and spaces between the marks are substantially randomly inverted each time the information is recorded and a length of the first synchronizing signal portion changes and a start position of the first synchronizing signal portion changes. A change of the start position of the first synchronizing signal portion is smaller than a change of the length of the first synchronizing signal portion.
摘要翻译：一种用于在可重写记录介质上记录信息的方法包括在可重写记录介质上的第一同步信号部分中记录第一同步信号信息，在可重写记录介质上的第一同步信号部分之后的第二同步信号部分中记录第二同步信号信息通过在数据部分中形成标记，将数据信息记录在第二同步信号部分之后的可重写记录介质的数据部分中。数据信息对应于每个标记的两端。每当信息被记录并且第一同步信号部分的长度改变并且第一同步信号部分的开始位置改变时，标记之间的标记和间隔基本上随机反转。第一同步信号部分的开始位置的改变小于第一同步信号部分的长度的变化。

37. 发明申请

US20050243683A1 Information recording method and apparatus 失效
标题翻译：信息记录方法和装置
公开(公告)号：US20050243683A1
公开(公告)日：2005-11-03
申请号：US11176320
申请日：2005-07-08
申请人： Hideaki Sasazawa , Tohishiko Nakata , Masahiro Watanabe , Shunichi Matsumoto
发明人： Hideaki Sasazawa , Tohishiko Nakata , Masahiro Watanabe , Shunichi Matsumoto
IPC分类号： G11B7/00 , G11B7/0045 , G11B7/006 , G11B7/007 , G11B7/013 , G11B20/10 , G11B20/12
CPC分类号： G11B20/1217 , G11B7/0045 , G11B7/00454 , G11B7/006 , G11B7/00718 , G11B7/00745 , G11B7/013 , G11B20/10009 , G11B20/12 , G11B2020/10898 , G11B2020/1285 , G11B2020/1287 , G11B2020/1288 , G11B2220/216 , G11B2220/2537
摘要： A method for recording information on a rewritable recording medium includes recording first synchronizing signal information in a first synchronizing signal portion on the rewritable recording medium, recording second synchronizing signal information in a second synchronizing signal portion following the first synchronizing signal portion on the rewritable recording medium, recording data information in a data portion of the rewritable recording medium after the second synchronizing signal portion by forming marks in the data portion. The data information corresponds to both ends of each the marks. The marks and spaces between the marks are substantially randomly inverted each time the information is recorded and a length of the first synchronizing signal portion changes and a start position of the first synchronizing signal portion changes. A change of the start position of the first synchronizing signal portion is smaller than a change of the length of the first synchronizing signal portion.
摘要翻译：一种用于在可重写记录介质上记录信息的方法包括在可重写记录介质上的第一同步信号部分中记录第一同步信号信息，在可重写记录介质上的第一同步信号部分之后的第二同步信号部分中记录第二同步信号信息通过在数据部分中形成标记，将数据信息记录在第二同步信号部分之后的可重写记录介质的数据部分中。数据信息对应于每个标记的两端。每当信息被记录并且第一同步信号部分的长度改变并且第一同步信号部分的开始位置改变时，标记之间的标记和间隔基本上随机反转。第一同步信号部分的开始位置的改变小于第一同步信号部分的长度的变化。

38. 发明授权

US06831277B1 Method for measuring dimensions and alignment of thin film magnetic head and apparatus therefor 失效
标题翻译：测量薄膜磁头尺寸和对准方法及其设备
公开(公告)号：US06831277B1
公开(公告)日：2004-12-14
申请号：US09437265
申请日：1999-11-10
申请人： Toshihiko Nakata , Hideaki Sasazawa , Kenji Furusawa , Minako Morisato , Hideo Yamakura , Toshio Tamura
发明人： Toshihiko Nakata , Hideaki Sasazawa , Kenji Furusawa , Minako Morisato , Hideo Yamakura , Toshio Tamura
IPC分类号： G01B1100
CPC分类号： G11B5/3173 , G11B5/3103 , G11B5/3166 , G11B5/3169 , G11B5/3189 , G11B5/3903 , G11B5/3967 , Y10T29/49036
摘要： A method of measuring variation in dimensions and alignment error of thin film magnetic heads formed on a raw bar cut-off from a substrate is provided. Such method comprises illuminating a MR element and a resistance detector element which is formed for monitoring a lapping process, both of which are formed on the raw bar, with illuminating light whose wavelength is 300 nm or less; forming an image by imaging light reflected from the elements; and converting the image to an image signal through photoelectric conversion so as to detect variation in dimensions of the MR element and the resistance detector element formed on the raw bar, and alignment error between the MR element and the resistance detector element with a high degree of accuracy.
摘要翻译：提供了一种测量从基板上切割的生条上形成的薄膜磁头的尺寸变化和对准误差的方法。这种方法包括：照射MR元件和电阻检测器元件，该元件形成用于监测两者都是在原料条上形成的研磨过程，其中波长为300nm或更小的照明光; 通过对从元件反射的光进行成像来形成图像; 并且通过光电转换将图像转换成图像信号，以便检测形成在原始条上的MR元件和电阻检测器元件的尺寸变化，以及MR元件和电阻检测器元件之间的对准误差准确性。

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