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31. 发明授权

US08349197B2 Method for manufacturing a perpendicular magnetic write head having a tapered write pole and non-magnetic bump structure 有权
标题翻译：具有锥形写磁极和非磁性凸块结构的垂直写磁头的制造方法
公开(公告)号：US08349197B2
公开(公告)日：2013-01-08
申请号：US12623206
申请日：2009-11-20
申请人： Liubo Hong , Wen-Chien D. Hsiao , Yimin Hsu , Yi Zheng
发明人： Liubo Hong , Wen-Chien D. Hsiao , Yimin Hsu , Yi Zheng
IPC分类号： B44C1/22
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3143 , G11B5/315 , G11B5/3163 , Y10T29/49048
摘要： A method for manufacturing a magnetic write head having a write pole and a trailing wrap around magnetic shield, and having a non-magnetic step layer and a non-magnetic bump to provide additional spacing between the write pole and the trailing wrap around shield at a location removed from the air bearing surface. A magnetic write pole material is deposited on a substrate and a non-magnetic step layer is deposited over the write pole. A reactive ion milling can he used to pattern the non-magnetic step layer to have a front edge that is located a desired distance from an air hearing surface. A patterning and ion milling process is then performed to define a write pole, and then a layer of alumina is deposited and ion milled to from a tapered, non-magnetic bump at the front the non-magnetic step layer.
摘要翻译：一种用于制造磁性写入头的方法，该写入磁头在磁屏蔽周围具有写入磁极和尾部缠绕，并且具有非磁性阶跃层和非磁性凸起，以在写入磁极和屏蔽之间的后续缠绕在一个位置从空气轴承表面移除。磁性写入极材料沉积在衬底上，非磁性步骤层沉积在写入极上。他可以使用反应离子研磨来对非磁性步骤层进行图案化以具有位于距离空气听力表面所需距离的前边缘。然后进行图形化和离子研磨处理以限定写入极，然后沉积氧化铝层，并从非磁性阶梯层前面的锥形非磁性凸块离子研磨。

32. 发明授权

US08216481B2 Process for fabricating ultra-narrow dimension magnetic sensor 有权
标题翻译：制造超窄尺寸磁传感器的工艺
公开(公告)号：US08216481B2
公开(公告)日：2012-07-10
申请号：US12581030
申请日：2009-10-16
申请人： Liubo Hong
发明人： Liubo Hong
IPC分类号： B44C1/22
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3116 , G11B5/3163 , G11B5/3909 , G11B2005/3996
摘要： A method for manufacturing a magnetoresistive read sensor that allows the sensor to be constructed with clean well defined side junctions, even at very narrow track widths. The method involves using first and second etch mask layers, that are constructed of materials such that the second mask (formed over the first mask) can act as a mask during the patterning of the first mask (bottom mask). The first mask has a well defined thickness that is defined by deposition and which is not affected by the etching processes used to define the mask. This allows the total ion milling etch mask thickness to be well controlled before the ion milling process used to define the sensor side walls.
摘要翻译：一种用于制造磁阻读取传感器的方法，即使在非常窄的轨道宽度下也能够使传感器构造成具有清晰良好定义的侧面接合点。该方法包括使用由材料构成的第一和第二蚀刻掩模层，使得第二掩模（形成在第一掩模上）可以在图案化第一掩模（底掩模）期间用作掩模。第一掩模具有由沉积限定的良好限定的厚度，并且其不受用于限定掩模的蚀刻工艺的影响。这允许在用于限定传感器侧壁的离子铣削过程之前，完全控制总离子铣削蚀刻掩模厚度。

33. 发明授权

US07838436B2 Bottom electrode for MRAM device and method to fabricate it 有权
标题翻译：用于MRAM设备的底电极及其制造方法
公开(公告)号：US07838436B2
公开(公告)日：2010-11-23
申请号：US11528877
申请日：2006-09-28
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.
摘要翻译：通过在氮化硅表面附近包括一层钌来促进在氮化硅衬底上形成用于MTJ器件的底部电极。钌是良好的电导体，并且它对Ta和TaN的反应与某些蚀刻剂不同。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。因此，所述包含的钌层可以在蚀刻Ta和/或TaN期间用作蚀刻停止层，而后者可用于形成用于蚀刻钌的硬掩模，而不会对氮化硅表面产生显着的腐蚀。

34. 发明授权

US07785666B1 Methods for fabricating a magnetic recording device 有权
标题翻译：制造磁记录装置的方法
公开(公告)号：US07785666B1
公开(公告)日：2010-08-31
申请号：US11955266
申请日：2007-12-12
申请人： Hai Sun , Liubo Hong , Hongping Yuan , Yizhong Wang , Winnie Yu , Xianzhong Zeng
发明人： Hai Sun , Liubo Hong , Hongping Yuan , Yizhong Wang , Winnie Yu , Xianzhong Zeng
IPC分类号： B05D1/32
CPC分类号： G11B5/855 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A method and system for fabricating a magnetic recording device are described. The method and system include providing a mask layer on the magnetic recording device and imprinting a pattern in the mask layer to form a mask. The method and system also include transferring the pattern from the mask to the magnetic recording device. In another aspect, the method and system include providing a malleable mask layer on the magnetic recording device. In this aspect, the method and system also include depressing an imprint mask into the mask layer and curing the mask layer while the imprint mask is depressed into the mask layer to provide a mask having a pattern. The pattern may correspond to a read sensor and/or a perpendicular magnetic recording pole. The method and system also include transferring the pattern from the mask to the magnetic recording device.
摘要翻译：描述了用于制造磁记录装置的方法和系统。所述方法和系统包括在磁记录装置上设置掩模层并在掩模层中印刷图案以形成掩模。该方法和系统还包括将图案从掩模转移到磁记录装置。在另一方面，该方法和系统包括在磁记录装置上提供可延展的掩模层。在这方面，该方法和系统还包括将印模掩模压入掩模层中并固化掩模层，同时将印模掩模压入掩模层中以提供具有图案的掩模。图案可以对应于读取传感器和/或垂直磁记录极。该方法和系统还包括将图案从掩模转移到磁记录装置。

35. 发明授权

US07358100B2 Bottom conductor for integrated MRAM 有权
标题翻译：集成MRAM的底部导体
公开(公告)号：US07358100B2
公开(公告)日：2008-04-15
申请号：US11891923
申请日：2007-08-14
申请人： Wei Cao , Chyu-Jiuh Torng , Cheng Horng , Ruying Tong , Chen-Jung Chien , Liubo Hong
发明人： Wei Cao , Chyu-Jiuh Torng , Cheng Horng , Ruying Tong , Chen-Jung Chien , Liubo Hong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/228
摘要： A method to fabricate an MTJ device and its connections to a CMOS integrated circuit is described. The device is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum.
摘要翻译：描述了一种制造MTJ器件及其与CMOS集成电路的连接的方法。该设备由三层构建。底层用作中心层的种子层，其为α钽，而第三最顶层选择为其平滑度，其与层间电介质材料的相容性以及其保护下面的钽的能力。

36. 发明授权

US07238979B2 Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM 有权
标题翻译：缓冲（种子）层在高性能磁隧道结MRAM中
公开(公告)号：US07238979B2
公开(公告)日：2007-07-03
申请号：US11236049
申请日：2005-09-26
申请人： Cheng T. Horng , Liubo Hong , Ru-Ying Tong , Yu-Hsia Chen
发明人： Cheng T. Horng , Liubo Hong , Ru-Ying Tong , Yu-Hsia Chen
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/30 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12
摘要： An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the MRAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in-situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.
摘要翻译：特别适合用作MRAM（磁性随机存取存储器）或隧道磁阻（TMR）读取传感器的MTJ（磁性隧道结）装置形成在种子层上，允许隧穿势垒层超薄，平滑，并具有高的击穿电压。种子层是形成在Ta的溅射蚀刻层上的NiCr层。用于MRAM的隧道势垒层由Al的薄层形成，其被自由基氧化（ROX），原位形成具有上述特征的层。用于读取传感器的隧道势垒层由Al或HfAl双层的薄层形成，其被天然氧化（NOX）原位形成以形成阻挡层。所得到的器件在GMR比和结电阻方面基本上具有改进的性能特征。

37. 发明授权

US07217577B2 Structure/method to fabricate a high-performance magnetic tunneling junction MRAM 失效
标题翻译：制造高性能磁隧道结MRAM的结构/方法
公开(公告)号：US07217577B2
公开(公告)日：2007-05-15
申请号：US11522663
申请日：2006-09-18
申请人： Cheng T. Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L43/08 , Y10S977/934 , Y10S977/935
摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched capping layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.
摘要翻译：在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。作为溅射蚀刻的结果，Ta覆盖层具有光滑的表面，并且光滑表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层）其超薄，光滑，并具有高击穿电压。在Ta的溅射蚀刻的覆盖层上形成NiCr种子层。在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

38. 发明申请

US20060208296A1 Novel structure and method to fabricate high performance MTJ devices for MRAM applications 失效
标题翻译：用于制造用于MRAM应用的高性能MTJ器件的新型结构和方法
公开(公告)号：US20060208296A1
公开(公告)日：2006-09-21
申请号：US11080860
申请日：2005-03-15
申请人： Cheng Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
发明人： Cheng Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3906 , H01L43/12
摘要： A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2. The MTJ configuraton is extendable to a 0.2×0.4 micron MTJ bit size.
摘要翻译：公开了一种MRAM阵列中的高性能MTJ，其中底部导体具有无定形Ta覆盖层。关键特征是由在Ta表面上形成的氧构成的表面活性剂层。得到的平滑且平坦的Ta覆盖层促进MTJ层中平滑且平坦的表面，随后在表面活性剂层上形成。对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。 MTJ配置可扩展到0.2x0.4微米的MTJ位大小。

39. 发明授权

US06532823B1 Insulator layers for magnetoresistive transducers 失效
标题翻译：用于磁阻传感器的绝缘层
公开(公告)号：US06532823B1
公开(公告)日：2003-03-18
申请号：US09272648
申请日：1999-03-18
申请人： Kenneth E. Knapp , Liubo Hong , Robert E. Rotmayer
发明人： Kenneth E. Knapp , Liubo Hong , Robert E. Rotmayer
IPC分类号： G01B716
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3103 , G11B5/3133 , G11B5/332 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： A magnetoresistive (MR) transducer has at least one insulative layer made of tetrahedral amorphous carbon (ta-C). The ta-C layer is formed by filtered cathodic arc deposition, has an essentially zero concentration of hydrogen and can serve as a read gap for the transducer. The hydrogen-free t-aC read gap has high thermal conductivity, keeping an adjoining MR sensor from overheating during operation. This extends sensor lifetimes and/or improves sensor performance. The read gap also has low defects and porosity, preventing unwanted electrical conduction or shorting between a sensor and a shield. The high hardness of the read gap resists plasma and chemical etching processes such as ion milling that are used to form the sensor. The increased hardness and reduced defects and porosity allow the read gaps to be made thinner without risking electrical shorting. Other hydrogen-free t-aC layers are employed for other sensor elements where electrical insulation and reduced thickness are important.
摘要翻译：磁阻（MR）换能器具有由四面体无定形碳（ta-C）制成的至少一个绝缘层。 ta-C层通过过滤的阴极电弧沉积形成，具有基本上为零的氢浓度，并且可以用作换能器的读取间隙。无氢的t-aC读取间隙具有高导热性，在运行期间保持相邻的MR传感器不会过热。这延长了传感器寿命和/或提高了传感器性能。读取间隙也具有低缺陷和孔隙率，防止传感器和屏蔽之间的不必要的导电或短路。读取间隙的高硬度抵抗用于形成传感器的等离子体和化学蚀刻工艺，例如离子铣削。增加的硬度和减少的缺陷和孔隙率使得读取间隙更薄，而不会出现电气短路的危险。其他无氢的t-aC层用于其他电绝缘和厚度减小的传感器元件。

40. 发明授权

US06466401B1 Thin film write head with interlaced coil winding and method of fabrication 有权
标题翻译：具有隔行线圈绕组的薄膜写头和制造方法
公开(公告)号：US06466401B1
公开(公告)日：2002-10-15
申请号：US09325057
申请日：1999-06-02
申请人： Liubo Hong , Ronald A. Barr
发明人： Liubo Hong , Ronald A. Barr
IPC分类号： G11B5147
CPC分类号： G11B5/313 , G11B5/3163
摘要： The preferred embodiment of the present invention provides a write head having an interlaced conductor coil winding and method of fabrication. The interlaced winding of the present invention may have alternating turns of a first and a second coil. In the preferred embodiment, the side walls of successive coil turns are separated by an ultra thin inorganic insulation which defines the distance between successive turns of the first and second coil. In one method of fabrication, a conductive seed layer is deposited on a generally planar insulative surface, a resist mask is formed on the seed layer, and a conductive material deposited on the exposed seed layer to form the turns of the first coil. The masked portions of the seed layer are removed, after resist mask removal, to electrically isolate the turns of the first coil. The inorganic insulation may be formed in a layer conformal with the first coil. The second coil is formed between the turns of the first coil. A seed layer and mask may be used to facilitate second coil deposition. Etching, or planarization, may be used to electrically isolate the turns of the second coil. A capping layer may be formed over any exposed conductor material to insulate the winding from an upper pole structure or other overlying structure. Embodiments of the present invention may have multiple layers of conductor winding having some conventional, or all interlaced coil structure.
摘要翻译：本发明的优选实施例提供一种具有隔行导体线圈绕组和制造方法的写头。本发明的交错绕组可以具有第一和第二线圈的交替匝。在优选实施例中，连续线圈的侧壁由限定第一和第二线圈的连续匝之间的距离的超薄无机绝缘体分开。在一种制造方法中，将导电种子层沉积在大体上平坦的绝缘表面上，在种子层上形成抗蚀剂掩模，以及沉积在暴露的种子层上以形成第一线圈的匝的导电材料。在去除抗蚀剂掩模之后，去除种子层的掩蔽部分，以电隔离第一线圈的匝数。无机绝缘体可以形成为与第一线圈共形的层。第二线圈形成在第一线圈的匝之间。种子层和掩模可以用于促进第二线圈沉积。蚀刻或平面化可以用于电隔离第二线圈的匝数。覆盖层可以形成在任何暴露的导体材料上，以使绕组与上极结构或其他上覆结构绝缘。本发明的实施例可以具有多个导体绕组层，其具有一些常规的或全部的隔行线圈结构。

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