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31. 发明授权

US07385287B2 Preventing damage to low-k materials during resist stripping 有权
标题翻译：防止抗蚀剂剥离时对低k材料的损伤
公开(公告)号：US07385287B2
公开(公告)日：2008-06-10
申请号：US11744035
申请日：2007-05-03
申请人： Siyi Li , Helen H. Zhu , Howard Dang , Thomas S. Choi , Peter Loewenhardt
发明人： Siyi Li , Helen H. Zhu , Howard Dang , Thomas S. Choi , Peter Loewenhardt
IPC分类号： H01L23/52 , H01L29/40
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/3105 , H01L21/31138
摘要： A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.
摘要翻译：提供了在低k电介质层中形成特征的方法。将低k电介质层放置在衬底上。将图案化的光致抗蚀剂掩模放置在低k电介质层上。至少一个特征被蚀刻到低k电介质层中。在蚀刻至少一个特征之后，在至少一个特征上进行CO调节。在CO调节之后剥离图案化的光刻胶掩模。

32. 发明授权

US07211518B2 Waferless automatic cleaning after barrier removal 有权
标题翻译：无障碍自动清洗后屏障去除
公开(公告)号：US07211518B2
公开(公告)日：2007-05-01
申请号：US10828065
申请日：2004-04-19
申请人： Xiaoqiang Sean Yao , Bi-Ming Yen , Taejoon Han , Peter Loewenhardt
发明人： Xiaoqiang Sean Yao , Bi-Ming Yen , Taejoon Han , Peter Loewenhardt
IPC分类号： H01L21/465
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/31116 , Y10S438/905
摘要： A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber wherein the wafer has a barrier layer over the wafer and a dielectric layer over the barrier layer. The dielectric layer is etched. The barrier layer is opened. The wafer is removed from the etch chamber. A waferless automatic cleaning of the etch chamber without the wafer is provided. The waferless automatic cleaning comprises providing a waferless automatic cleaning gas comprising oxygen and nitrogen to the etch chamber and forming a waferless automatic cleaning plasma from the waferless automatic cleaning gas to clean the etch chamber.
摘要翻译：提供了一种用于在电介质层中形成特征的方法和用于多个晶片的开口阻挡层并且在处理和去除多个晶片中的每个晶片之后清洁蚀刻室。将多个晶片的晶片放置在蚀刻室中，其中晶片在晶片上方具有阻挡层，并且在阻挡层上方具有介电层。蚀刻介电层。阻隔层打开。从蚀刻室移除晶片。提供了没有晶片的蚀刻室的无晶圆自动清洗。无晶圆自动清洁包括向蚀刻室提供包括氧和氮的无晶圆自动清洁气体，并从无晶圆自动清洁气体形成无晶圆的自动清洗等离子体，以清洁蚀刻室。

33. 发明申请

US20050233590A1 Waferless automatic cleaning after barrier removal 有权
标题翻译：无障碍自动清洗后屏障去除
公开(公告)号：US20050233590A1
公开(公告)日：2005-10-20
申请号：US10828065
申请日：2004-04-19
申请人： Xiaoqiang Yao , Bi-Ming Yen , Taejoon Han , Peter Loewenhardt
发明人： Xiaoqiang Yao , Bi-Ming Yen , Taejoon Han , Peter Loewenhardt
IPC分类号： H01L21/00 , H01L21/02 , H01L21/311 , H01L21/465 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/31116 , Y10S438/905
摘要： A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber wherein the wafer has a barrier layer over the wafer and a dielectric layer over the barrier layer. The dielectric layer is etched. The barrier layer is opened. The wafer is removed from the etch chamber. A waferless automatic cleaning of the etch chamber without the wafer is provided. The waferless automatic cleaning comprises providing a waferless automatic cleaning gas comprising oxygen and nitrogen to the etch chamber and forming a waferless automatic cleaning plasma from the waferless automatic cleaning gas to clean the etch chamber.
摘要翻译：提供了一种用于在电介质层中形成特征的方法和用于多个晶片的开口阻挡层并且在处理和去除多个晶片中的每个晶片之后清洁蚀刻室。将多个晶片的晶片放置在蚀刻室中，其中晶片在晶片上方具有阻挡层，并且在阻挡层上方具有介电层。蚀刻介电层。阻隔层打开。从蚀刻室移除晶片。提供了没有晶片的蚀刻室的无晶圆自动清洗。无晶圆自动清洁包括向蚀刻室提供包括氧和氮的无晶圆自动清洁气体，并从无晶圆自动清洁气体形成无晶圆的自动清洗等离子体，以清洁蚀刻室。

34. 发明授权

US06841943B2 Plasma processor with electrode simultaneously responsive to plural frequencies 有权
标题翻译：等离子体处理器，电极同时响应多个频率
公开(公告)号：US06841943B2
公开(公告)日：2005-01-11
申请号：US10180978
申请日：2002-06-27
申请人： Vahid Vahedi , Peter Loewenhardt , Albert Ellingboe , Andras Kuthi , Andreas Fischer
发明人： Vahid Vahedi , Peter Loewenhardt , Albert Ellingboe , Andras Kuthi , Andreas Fischer
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.
摘要翻译：处理工件的真空室中的等离子体由包括第一电极同时响应于第一和第二RF频率的功率的第一电极和直流接地第二电极之间的等离子体约束体积界定。直流接地延伸部基本上与第一电极对准。在第一频率处的相当大的功率百分比被耦合到包括第一和第二电极而不是扩展的路径，而在第二频率处的相当大的功率百分比被耦合到包括第一电极和延伸的路径，而不是第二频率的路径电极。施加到第一电极的第一和第二频率处的相对功率的改变控制第一电极的直流偏置电压。

35. 发明授权

US06744212B2 Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions 有权
标题翻译：用于在非常高的气流和RF功率密度条件下限制RF等离子体的等离子体处理装置和方法
公开(公告)号：US06744212B2
公开(公告)日：2004-06-01
申请号：US10077072
申请日：2002-02-14
申请人： Andreas Fischer , Dave Trussell , Bill Kennedy , Peter Loewenhardt
发明人： Andreas Fischer , Dave Trussell , Bill Kennedy , Peter Loewenhardt
IPC分类号： C23C1600
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32642
摘要： The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode, a power generator, a second electrode, at least one confinement ring, and a ground extension surrounding the first electrode. The first electrode is configured to receive a workpiece and has an associated first electrode area. The power generator is operatively coupled to the first electrode, and the power generator is configured to generate RF power that is communicated to the first electrode. The second electrode is disposed at a distance from the first electrode. The second electrode is configured to provide a complete electrical circuit for RF power communicated from the first electrode. Additionally, the second electrode has a second electrode area that is greater than the first electrode area. At least one confinement ring is configured to assist confine the plasma. The plasma is generated with the RF power being communicated between the first electrode and the gas residing inside the confinement rings. The ground extension drains charge from the plasma boundaries with a grounded conductive surface.
摘要翻译：本发明包括用于将等离子体限制在等离子体处理室内的系统和方法。等离子体处理装置包括第一电极，发电机，第二电极，至少一个限制环和围绕第一电极的接地延伸部。第一电极被配置为接收工件并且具有相关联的第一电极区域。功率发生器可操作地耦合到第一电极，并且发电机被配置为产生与第一电极连通的RF功率。第二电极设置在离第一电极一定距离处。第二电极被配置为提供从第一电极传送的RF功率的完整电路。另外，第二电极具有大于第一电极区域的第二电极区域。至少一个限制环被配置成辅助限制等离子体。产生等离子体，其中RF功率在第一电极和驻留在限制环内部的气体之间连通。接地延长线从等离子体边界带有接地导电表面的电荷。

36. 发明授权

US5801386A Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same 失效
标题翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法
公开(公告)号：US5801386A
公开(公告)日：1998-09-01
申请号：US653212
申请日：1996-05-28
申请人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
发明人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
IPC分类号： H01J37/32 , H01J37/244
CPC分类号： H01J37/32935
摘要： Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.
摘要翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法。该装置包含第一绝缘体层，通过图案化和蚀刻铜层压体而形成一个或多个导电集电极焊盘。每个集电极焊盘连接到从每个集电极焊盘延伸到第一绝缘体层的边缘的导电引线（例如印刷电路迹线）。第二绝缘体层位于第一绝缘体层之上，使得集电极焊盘及其相应的引线夹在两个绝缘体层之间。使用粘合剂将第二绝缘体固定到第一绝缘体和集电板。集电极焊盘通过由第二绝缘体层限定的孔暴露于等离子体。

37. 发明申请

US20120031426A1 Methods For Preventing Corrosion of Plasma-Exposed Yttria-Coated Constituents 有权
标题翻译：防止等离子体暴露的氧化钇涂层组分腐蚀的方法
公开(公告)号：US20120031426A1
公开(公告)日：2012-02-09
申请号：US12852673
申请日：2010-08-09
申请人： Ganapathy Swami , Peter Loewenhardt , Yunsang Kim
发明人： Ganapathy Swami , Peter Loewenhardt , Yunsang Kim
IPC分类号： B08B6/00
CPC分类号： C23C16/4404
摘要： In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed. The method may include: removing the plasma-exposed yttria-coated constituent from a semiconductor processing assembly; binding the plasma-exposed yttria-coated constituent with flexible moisture wicking material; hydrolyzing the hydrolysable acid precursor with an overwhelming aqueous admixture to form a vitiated acidic compound, wherein the flexible moisture wicking material pulls the vitiated acidic compound away from the plasma-exposed yttria-coated constituent with capillary action; dehydrating the plasma-exposed yttria-coated constituent with additional flexible moisture wicking material to pull a latent amount of the vitiated acidic compound away from the plasma-exposed yttria-coated constituent; and isolating the plasma-exposed yttria-coated constituent from ambient moisture in a moisture obstructing enclosure.
摘要翻译：根据本公开的一个实施方案，公开了一种防止等离子体暴露的氧化钇涂覆的组分由环境酸性水解引起的腐蚀的方法，其中等离子体暴露的氧化钇涂层的组分包括可水解的酸前体。该方法可以包括：从半导体处理组件中去除等离子体暴露的氧化钇涂层的组分; 用柔性吸湿芯材材料结合等离子体暴露的氧化钇涂层组分; 用压倒性的水性混合物水解可水解的酸前体以形成残留的酸性化合物，其中柔性湿润吸湿材料通过毛细管作用将残留的酸性化合物从等离子体暴露的氧化钇涂覆的组分拉出; 用额外的柔性吸湿芯材材料使等离子体暴露的氧化钇涂层组分脱水，以将潜在量的残留酸性化合物远离等离子体暴露的氧化钇涂层组分; 并将隔离曝光的氧化钇涂层的组分与湿气阻塞的外壳中的环境湿度隔离开来。

38. 发明授权

US07976673B2 RF pulsing of a narrow gap capacitively coupled reactor 有权
标题翻译：窄间隙电容耦合反应器的RF脉冲
公开(公告)号：US07976673B2
公开(公告)日：2011-07-12
申请号：US10431030
申请日：2003-05-06
申请人： Peter Loewenhardt , Mukund Srinivasan , Andreas Fischer
发明人： Peter Loewenhardt , Mukund Srinivasan , Andreas Fischer
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： An apparatus for providing a plasma etch of a layer over a wafer is provided. A capacitively coupled process chamber is provided. A gas source is provided. A first and a second electrode are provided within the process chamber. A first radio frequency power source is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source is electrically connected to at least one of the first and second electrodes. A first modulation control is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
摘要翻译：提供了一种用于在晶片上提供层的等离子体蚀刻的设备。提供了一种电容耦合处理室。提供气源。第一和第二电极设置在处理室内。第一射频电源电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。第二射频电源电连接到第一和第二电极中的至少一个。第一调制控制连接到第一射频电源，以提供对第一射频电源的受控调制。

39. 发明申请

US20110067814A1 MULTI-PART ELECTRODE FOR A SEMICONDUCTOR PROCESSING PLASMA REACTOR AND METHOD OF REPLACING A PORTION OF A MULTI-PART ELECTRODE 有权
标题翻译：用于半导体处理等离子体反应器的多部分电极和替换多部分电极的部分的方法
公开(公告)号：US20110067814A1
公开(公告)日：2011-03-24
申请号：US12954060
申请日：2010-11-24
申请人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
发明人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
IPC分类号： H01L21/3065
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
摘要翻译：改进的上电极系统具有多部分电极，其中具有高磨损的电极的中心部分可以独立于电极的外周部分进行替换。上电极可用于等离子体处理系统中，例如通过蚀刻或CVD来处理半导体衬底。多部分上电极系统对于大尺寸晶片处理室是特别有用的，例如用于单片电极不可用或成本高的300mm晶片处理室。

40. 发明申请

US20080210377A1 UNIFORM ETCH SYSTEM 有权
标题翻译：均匀蚀刻系统
公开(公告)号：US20080210377A1
公开(公告)日：2008-09-04
申请号：US12055212
申请日：2008-03-25
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty , Peter Loewenhardt
IPC分类号： C23F1/08
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

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