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    • 34. 发明授权
    • Semiconductor laser element capable of changing emission wavelength, and
method of driving the same
    • 能够改变发射波长的半导体激光元件及其驱动方法
    • US5155736A
    • 1992-10-13
    • US790832
    • 1991-11-14
    • Takeo OnoHajime Sakata
    • Takeo OnoHajime Sakata
    • H01S5/0625H01S5/34H01S5/50
    • B82Y20/00H01S5/06255H01S5/34H01S5/06256H01S5/06258H01S5/5045
    • A semiconductor laser element capable of changing an oscillation wavelength over a wide range without increasing a threshold current is disclosed. A wavelength selective filter capable of changing a selected wavelength over a wide range is also disclosed. The semiconductor laser element has a substrate and a laser resonator formed on the substrate by stacking semiconductor layers including an active layer and an optical waveguide layer of a superlattice structure. The resonator includes a first reflection portion, an active portion, a phase adjustment portion and second reflection portion which are juxtaposed in a resonance direction. Diffraction gratings are formed in the optical guide layer of the first and second reflection portions. Electrodes are independently formed in the active portion, the phase adjustment portion and the first and second reflection portions. Further, a method for driving the semiconductor laser is disclosed.
    • 公开了能够在不增加阈值电流的情况下在宽范围内改变振荡波长的半导体激光元件。 还公开了能够在宽范围内改变选定波长的波长选择滤波器。 半导体激光元件具有通过层叠包括有源层和超晶格结构的光波导层的半导体层而形成在基板上的基板和激光谐振器。 谐振器包括在谐振方向上并列的第一反射部分,有源部分,相位调整部分和第二反射部分。 衍射光栅形成在第一和第二反射部分的光导层中。 电极独立地形成在有源部分,相位调整部分和第一和第二反射部分中。 此外,公开了一种用于驱动半导体激光器的方法。