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    • 36. 发明授权
    • Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules
    • 增加具有不匹配内存模块的每个模块内存系统带宽的技术
    • US07073035B2
    • 2006-07-04
    • US11100386
    • 2005-04-07
    • Frederick A. WareRichard E. PeregoCraig E. HampelEly K. Tsern
    • Frederick A. WareRichard E. PeregoCraig E. HampelEly K. Tsern
    • G06F12/00
    • G06F13/1684G11C8/16
    • Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules are disclosed. In one exemplary embodiment, the techniques are realized through a memory controller for controlling access to a memory module, wherein the memory module has a memory component with a memory core for storing data therein. The memory controller comprises a first set of interface connections for providing access to the memory module, and a second set of interface connections for providing access to the memory module. The memory controller also comprises memory access circuitry for providing memory access signals to the memory module for selecting between a first mode wherein a first portion of the memory core is accessible through the first set of interface connections and a second portion of the memory core is accessible through the second set of interface connections, and a second mode wherein both the first portion and the second portion of the memory core are accessible through the first set of interface connections.
    • 公开了用于增加具有不匹配的存储器模块的每模块模块存储器系统中的带宽的技术。 在一个示例性实施例中,通过用于控制对存储器模块的访问的存储器控​​制器来实现这些技术,其中存储器模块具有存储器组件,存储器组件具有用于在其中存储数据的存储器核心。 存储器控制器包括用于提供对存储器模块的访问的第一组接口连接和用于提供对存储器模块的访问的第二组接口连接。 存储器控制器还包括用于向存储器模块提供存储器访问信号的存储器访问电路,用于在第一模式之间进行选择,其中存储器核心的第一部分可通过第一组接口连接访问,并且存储器核心的第二部分可访问 通过第二组接口连接,以及第二模式,其中存储器核心的第一部分和第二部分都可通过第一组接口连接来访问。
    • 37. 发明授权
    • Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules
    • 增加具有不匹配内存模块的每个模块内存系统带宽的技术
    • US06769050B1
    • 2004-07-27
    • US09948906
    • 2001-09-10
    • Frederick A. WareRichard E. PeregoCraig E. HampelEly K. Tsern
    • Frederick A. WareRichard E. PeregoCraig E. HampelEly K. Tsern
    • G06F1200
    • G06F13/1684G11C8/16
    • Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules are disclosed. In one exemplary embodiment, the techniques are realized through a memory controller for controlling access to a memory module, wherein the memory module has a memory component with a memory core for storing data therein. The memory controller comprises a first set of interface connections for providing access to the memory module, and a second set of interface connections for providing access to the memory module. The memory controller also comprises memory access circuitry for providing memory access signals to the memory module for selecting between a first mode wherein a first portion of the memory core is accessible through the first set of interface connections and a second portion of the memory core is accessible through the second set of interface connections, and a second mode wherein both the first portion and the second portion of the memory core are accessible through the first set of interface connections.
    • 公开了用于增加具有不匹配的存储器模块的每模块模块存储器系统中的带宽的技术。 在一个示例性实施例中,通过用于控制对存储器模块的访问的存储器控​​制器来实现这些技术,其中存储器模块具有存储器组件,存储器组件具有用于在其中存储数据的存储器核心。 存储器控制器包括用于提供对存储器模块的访问的第一组接口连接和用于提供对存储器模块的访问的第二组接口连接。 存储器控制器还包括用于向存储器模块提供存储器访问信号的存储器访问电路,用于在第一模式之间进行选择,其中存储器核心的第一部分可通过第一组接口连接访问,并且存储器核心的第二部分可访问 通过第二组接口连接,以及第二模式,其中存储器核心的第一部分和第二部分都可通过第一组接口连接来访问。
    • 39. 发明授权
    • Low power memory device
    • 低功耗存储设备
    • US09257159B2
    • 2016-02-09
    • US14173724
    • 2014-02-05
    • Frederick A. WareEly K. TsernCraig E. Hampel
    • Frederick A. WareEly K. TsernCraig E. Hampel
    • G11C8/00G11C7/10G11C5/14G11C7/22G11C8/08G11C8/12G11C11/4076G11C11/408G11C11/4063
    • G11C7/1006G11C5/14G11C7/1039G11C7/1045G11C7/1051G11C7/1096G11C7/22G11C7/222G11C8/08G11C8/12G11C11/4063G11C11/4076G11C11/4085G11C2207/2227
    • A method of operation within a memory device is disclosed. The method comprises receiving address information and corresponding enable information in association with a memory access request. The address information includes a row address that specifies a row of storage cells within a storage array of the memory device, and the enable information includes first and second enable values that correspond respectively to first and second storage locations within the row of storage cells. The method involves selectively transferring data between the first and second storage locations and sense amplifier circuitry according to states of the first and second enable values. This includes transferring data between the first storage location and the sense amplifier circuitry if the first enable value is in an enable state and transferring data between the second storage location and the sense amplifier circuitry if the second enable value is in the enable state. The states of the first and second enable values may be separately controlled.
    • 公开了一种存储器件内的操作方法。 该方法包括与存储器访问请求相关联地接收地址信息和相应的使能信息。 地址信息包括指定存储器件的存储阵列内的存储单元行的行地址,并且使能信息包括分别对应于存储单元行内的第一和第二存储位置的第一和第二使能值。 该方法涉及根据第一和第二使能值的状态选择性地在第一和第二存储位置之间传输数据和感测放大器电路。 这包括如果第一使能值处于使能状态,则在第一存储位置和读出放大器电路之间传送数据,并且如果第二使能值处于使能状态,则在第二存储位置和读出放大器电路之间传送数据。 可以单独控制第一和第二使能值的状态。